CN105206680A - 双向瞬态电压抑制二极管及其制造方法 - Google Patents
双向瞬态电压抑制二极管及其制造方法 Download PDFInfo
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- CN105206680A CN105206680A CN201410284802.XA CN201410284802A CN105206680A CN 105206680 A CN105206680 A CN 105206680A CN 201410284802 A CN201410284802 A CN 201410284802A CN 105206680 A CN105206680 A CN 105206680A
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158851A (zh) * | 2016-08-31 | 2016-11-23 | 北京燕东微电子有限公司 | 一种双向超低电容瞬态电压抑制器及其制作方法 |
CN107301994A (zh) * | 2017-07-12 | 2017-10-27 | 邓鹏飞 | 瞬态电压抑制器及其制作方法 |
CN107342283A (zh) * | 2017-07-12 | 2017-11-10 | 车成凯 | 瞬态电压抑制器及其制作方法 |
CN113764404A (zh) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
CN114038902A (zh) * | 2021-12-01 | 2022-02-11 | 上海镓芯科技有限公司 | 一种薄膜型半导体的瞬态电压抑制二极管 |
CN113764404B (zh) * | 2021-09-22 | 2024-06-04 | 江苏吉莱微电子股份有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
Citations (4)
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---|---|---|---|---|
JPH0770742B2 (ja) * | 1992-12-15 | 1995-07-31 | サンケン電気株式会社 | 半導体装置 |
KR20050112623A (ko) * | 2004-05-27 | 2005-12-01 | 주식회사 케이이씨 | 과도 전압 억제 소자 및 그 제조 방법 |
CN102013436A (zh) * | 2010-01-15 | 2011-04-13 | 傲迪特半导体(南京)有限公司 | 具有双向击穿防护功能的低电压过电压抑制器及制造方法 |
US20120025350A1 (en) * | 2010-08-02 | 2012-02-02 | Amazing Microelectronic Corp. | Vertical transient voltage suppressors |
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2014
- 2014-06-24 CN CN201410284802.XA patent/CN105206680B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770742B2 (ja) * | 1992-12-15 | 1995-07-31 | サンケン電気株式会社 | 半導体装置 |
KR20050112623A (ko) * | 2004-05-27 | 2005-12-01 | 주식회사 케이이씨 | 과도 전압 억제 소자 및 그 제조 방법 |
CN102013436A (zh) * | 2010-01-15 | 2011-04-13 | 傲迪特半导体(南京)有限公司 | 具有双向击穿防护功能的低电压过电压抑制器及制造方法 |
US20120025350A1 (en) * | 2010-08-02 | 2012-02-02 | Amazing Microelectronic Corp. | Vertical transient voltage suppressors |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158851A (zh) * | 2016-08-31 | 2016-11-23 | 北京燕东微电子有限公司 | 一种双向超低电容瞬态电压抑制器及其制作方法 |
CN106158851B (zh) * | 2016-08-31 | 2022-11-11 | 北京燕东微电子有限公司 | 一种双向超低电容瞬态电压抑制器及其制作方法 |
CN107301994A (zh) * | 2017-07-12 | 2017-10-27 | 邓鹏飞 | 瞬态电压抑制器及其制作方法 |
CN107342283A (zh) * | 2017-07-12 | 2017-11-10 | 车成凯 | 瞬态电压抑制器及其制作方法 |
CN113764404A (zh) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
CN113764404B (zh) * | 2021-09-22 | 2024-06-04 | 江苏吉莱微电子股份有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
CN114038902A (zh) * | 2021-12-01 | 2022-02-11 | 上海镓芯科技有限公司 | 一种薄膜型半导体的瞬态电压抑制二极管 |
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Effective date of registration: 20191227 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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