CN107222196B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN107222196B
CN107222196B CN201710129271.0A CN201710129271A CN107222196B CN 107222196 B CN107222196 B CN 107222196B CN 201710129271 A CN201710129271 A CN 201710129271A CN 107222196 B CN107222196 B CN 107222196B
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China
Prior art keywords
mos transistor
channel mos
potential
power supply
coupled
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Active
Application number
CN201710129271.0A
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English (en)
Chinese (zh)
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CN107222196A (zh
Inventor
高柳浩二
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN107222196A publication Critical patent/CN107222196A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201710129271.0A 2016-03-22 2017-03-06 半导体器件 Active CN107222196B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-057403 2016-03-22
JP2016057403A JP6643157B2 (ja) 2016-03-22 2016-03-22 半導体装置

Publications (2)

Publication Number Publication Date
CN107222196A CN107222196A (zh) 2017-09-29
CN107222196B true CN107222196B (zh) 2023-06-27

Family

ID=59896988

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710129271.0A Active CN107222196B (zh) 2016-03-22 2017-03-06 半导体器件

Country Status (5)

Country Link
US (2) US9948283B2 (cg-RX-API-DMAC10.html)
JP (1) JP6643157B2 (cg-RX-API-DMAC10.html)
KR (1) KR20170110021A (cg-RX-API-DMAC10.html)
CN (1) CN107222196B (cg-RX-API-DMAC10.html)
TW (1) TW201742378A (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101799B2 (en) * 2017-05-24 2021-08-24 SK Hynix Inc. Voltage driving circuit
JP7114268B2 (ja) * 2018-02-20 2022-08-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6952619B2 (ja) * 2018-02-21 2021-10-20 ルネサスエレクトロニクス株式会社 半導体装置
CN112243569B (zh) * 2018-06-19 2024-10-29 株式会社索思未来 半导体集成电路装置
US10637446B1 (en) * 2019-06-24 2020-04-28 Sandisk Technologies Llc Dual voltage range CMOS receiver
CN112671391B (zh) * 2020-12-21 2023-04-18 海光信息技术股份有限公司 一种电平转换电路
CN112383298B (zh) * 2021-01-18 2021-06-11 灿芯半导体(上海)股份有限公司 一种ddr发送电路
TWI770999B (zh) * 2021-05-12 2022-07-11 友達光電股份有限公司 電壓調變電路及其操作方法
US11881847B2 (en) * 2021-09-14 2024-01-23 Mediatek Inc. Post driver and chip with overdrive capability
KR102930392B1 (ko) 2021-09-16 2026-02-23 삼성전자주식회사 복수의 바이어스 전압들에 기초하여 출력 전압을 생성하는 출력 드라이빙 회로 및 이의 동작 방법
WO2023062741A1 (ja) * 2021-10-13 2023-04-20 株式会社ソシオネクスト 出力回路
JP7833976B2 (ja) 2022-06-20 2026-03-23 ルネサスエレクトロニクス株式会社 半導体装置
CN116366039A (zh) * 2023-03-31 2023-06-30 北京微科能创科技有限公司 一种用于高压功率芯片端口控制的迟滞电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148988A (ja) * 1994-09-21 1996-06-07 Nec Corp 電圧レベルシフト回路
JPH09500255A (ja) * 1994-04-08 1997-01-07 ヴィヴィッド・セミコンダクター・インコーポレーテッド 低電圧ｃｍｏｓプロセスを用いた高電圧ｃｍｏｓ論理
CN102075176A (zh) * 2011-01-13 2011-05-25 威盛电子股份有限公司 电位转换电路
JP2013150219A (ja) * 2012-01-20 2013-08-01 Toppan Printing Co Ltd 半導体集積回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69531032T2 (de) 1994-09-21 2003-11-27 Nec Electronics Corp., Kawasaki Spannungspegel-Verschiebungsschaltung
JP3755911B2 (ja) * 1994-11-15 2006-03-15 富士通株式会社 半導体回路
JP2993462B2 (ja) * 1997-04-18 1999-12-20 日本電気株式会社 出力バッファ回路
US7224195B2 (en) * 2003-12-11 2007-05-29 Integrated Device Technology, Inc. Output drive circuit that accommodates variable supply voltages
JP4676507B2 (ja) * 2008-02-21 2011-04-27 Ｏｋｉセミコンダクタ株式会社 負荷容量の駆動回路
JP5356536B2 (ja) * 2008-12-29 2013-12-04 アギア システムズ インコーポレーテッド 電圧レベル変換回路
TWI374611B (en) * 2009-04-03 2012-10-11 Univ Nat Sun Yat Sen I/o buffer with twice supply voltage tolerance using normal supply voltage devices
GB2469634B (en) * 2009-04-20 2015-11-11 Advanced Risc Mach Ltd Input-output device protection
TWI463600B (zh) * 2011-03-02 2014-12-01 Global Unichip Corp 二級式後端驅動器
KR101989571B1 (ko) * 2012-06-27 2019-06-14 삼성전자주식회사 고전압 및 와이드 랜지 전압 동작을 위한 출력 드라이버 및 그것을 사용한 데이터 출력 드라이빙 회로
US9837161B2 (en) * 2016-03-09 2017-12-05 Nxp Usa, Inc. Split-gate memory having sector retirement with reduced current and method therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09500255A (ja) * 1994-04-08 1997-01-07 ヴィヴィッド・セミコンダクター・インコーポレーテッド 低電圧ｃｍｏｓプロセスを用いた高電圧ｃｍｏｓ論理
JPH08148988A (ja) * 1994-09-21 1996-06-07 Nec Corp 電圧レベルシフト回路
CN102075176A (zh) * 2011-01-13 2011-05-25 威盛电子股份有限公司 电位转换电路
JP2013150219A (ja) * 2012-01-20 2013-08-01 Toppan Printing Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
US20180269860A1 (en) 2018-09-20
JP2017175288A (ja) 2017-09-28
CN107222196A (zh) 2017-09-29
US9948283B2 (en) 2018-04-17
KR20170110021A (ko) 2017-10-10
JP6643157B2 (ja) 2020-02-12
TW201742378A (zh) 2017-12-01
US20170279438A1 (en) 2017-09-28
US10236868B2 (en) 2019-03-19

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