CN106575609B - 调节远程等离子源以获得具有可重复蚀刻与沉积率的增进性能 - Google Patents
调节远程等离子源以获得具有可重复蚀刻与沉积率的增进性能 Download PDFInfo
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Abstract
本公开内容的实施例一般关于用以调节远程等离子体产生器的内壁表面的方法。在一个实施例中,提供了一种用以处理基板的方法。所述方法包括下列步骤:将远程等离子体源的内壁表面暴露于处在激发态的调节气体,以钝化远程等离子体源的内壁表面,其中该远程等离子体源透过导管耦接至处理腔室,其中基板设置于处理腔室中,且调节气体包含含氧气体、含氮气体、或前述气体的组合。已观察到所述方法能增进处理腔室中的解离/重组速率及等离子体耦合效率,且因此提供了晶片至晶片之间的可重复且稳定的等离子体源表现。
Description
技术领域
本公开内容的实施例总体上涉及用于调节远程等离子体源的方法。
背景技术
等离子体增强的化学气相沉积(PECVD)工艺是将电磁能量施加到至少一种前驱物气体或蒸气以将前驱物转变成反应性等离子体的一种工艺。形成等离子体可降低形成膜所需的温度、增加形成速率或两者皆可。可在处理腔室内部(即,原位)产生等离子体,或在远程等离子体产生器中产生等离子体,所述远程等离子体产生器定位在处理腔室的远程。远程等离子体产生器提供诸多优点。例如,远程等离子体产生器可对不具有原位等离子体系统的沉积系统提供等离子体能力(plasma capability)。使用远程等离子体产生器也可最小化等离子体与基板及腔室部件的交互作用,从而防止处理腔室的内部有等离子体形成工艺的非期望副产物。
远程等离子体产生器总体上具有保护性阳极化铝涂层,以保护铝质内壁不劣化。然而,阳极化铝涂层通常是有孔的,且倾向发生表面反应。因此,由于阳极化涂层在等离子体清洁环境中的劣化,因而限制了阳极化铝涂层的寿命。铝质表面上方的保护性阳极化涂层的失效会导致下游反应器腔室内的过量颗粒产生(particulate generation)。此外,由于保护性阳极化涂层的表面状况随着工艺持续而有所改变,因此下游反应器腔室也遭遇不稳定的等离子体表现。因此,晶片至晶片之间的晶片沉积/蚀刻速率、膜均匀性及等离子体耦合效率会降低。
虽然可能进行频繁的腔室清洁以稳定腔室状况,腔室清洁化学物(如NF3)将会使阳极化涂层以更快的速率退化。在远程等离子体源使用AlN等离子体块体(plasma block)或阳极化等离子体块体的某些情况中,远程等离子体源内的表面状况将随着沉积或清洁化学物在时间上改变。等离子体块体的表面状况的此改变不会提供可重复的等离子体表现,从而导致时间上不一致的晶片对晶片表现。
因此,需要一种用于调节远程等离子体产生器的表面的方法,以在维持基板产量的同时提供稳定且可重复的等离子体表现。
发明内容
本公开内容的实施例总体上涉及调节远程等离子体产生器的内壁表面的方法。在一个实施例中,提供了处理基板的方法。该方法包括下列步骤:将自由基源的内壁表面暴露于处在激发态的调节气体,以钝化自由基源的内壁表面,其中自由基源经由自由基导管耦接至处理腔室,其中基板设置于该处理腔室中,且调节气体包含含氧气体、含氮气体、或前述气体的组合。
在另一实施例中,所述方法包括下列步骤:(a)将自由基源的内壁表面暴露于处在激发态的调节气体,以钝化自由基源的内壁表面,其中自由基源经由自由基导管耦接至处理腔室,其中基板设置于处理腔室中,且调节气体包含含氧气体、含氮气体、或前述气体的组合;(b)于该处理腔室中,使用来自自由基源的自由基,于来自一批次的基板中的N个数量的基板上进行一系列的工艺,其中N是基板的整数数量并介于1与20之间;以及(c)重复步骤(a)及(b),直到该批次的基板中的最后一个基板经处理并从处理腔室移出为止。
在又一实施例中,所述方法包括下列步骤:将自由基源的内壁表面暴露于调节气体,其中调节气体包含含氧气体、含氮气体或前述气体的组合;于自由基源中,从调节气体产生等离子体,以钝化自由基源的内壁表面;以及于处理腔室中,使用来自自由基源的自由基,于N个数量的基板上进行一系列的工艺,其中N是基板的整数倍并介于1与20之间。
附图说明
为能详细了解本公开内容以上所载特征,可参阅多个实施例得出以上简要概括的本公开内容的更具体说明内容,且部分实施例图示于附图中。然而应注意,该等附图仅绘示代表性实施例,故而不应视为本公开内容范围的限制,本公开内容允许做出其他等效实施例。
图1为根据本公开内容的实施例的用以形成介电膜的设备的剖面视图。
图2绘示根据本公开内容的实施例的用以调节图1的自由基源的方法。
为帮助理解,尽可能地使用相同附图标记代表该等图式中共有的相同元素。构想到,一个实施例的元素和特征可有益地并入其他实施例中而无需进一步详述。
具体实施方式
图1为根据本公开内容的实施例的用以形成介电膜的设备100的剖面视图。在一个实施例中,设备100包括处理腔室102以及自由基源(radical source)104,自由基源104耦接至处理腔室102。自由基源104可以是能产生自由基的任何合适来源。自由基源104可以是远程等离子体源,如射频(RF)或超高射频(very high radio frequency,VHRF)、电容式耦合的等离子体(capacitively coupled plasma,CCP)源、感应式耦合的等离子体(inductively coupled plasma,ICP)源、微波感应(microwave induced,MW)的等离子体源、电子回旋加速共振(electron cyclotron resonance,ECR)腔室,或高密度等离子体(high density plasma,HDP)腔室。或者,自由基源104可以是紫外线(UV)源或热线化学气相沉积(hot wire chemical vapor deposition,HW-CVD)腔室的丝状体(filament)。自由基源104可包括一个或多个气体入口106,且自由基源104可通过自由基导管108耦接至处理腔室102。一或多种工艺气体可经由一个或多个气体入口106进入自由基源104,所述工艺气体可以是自由基形成气体(radical-forming gas)。所述一或多种工艺气体可包含含氧气体、含氮气体、含氢气体、或上述气体的任何组合。在自由基源104中产生的自由基可行进经由与处理腔室102耦接的自由基导管108进入处理腔室102。
自由基源104可具有施加至铝质内部腔室壁的阳极化涂层,以保护下方铝质内部腔室壁不受侵蚀或劣化。在多个实施例中,阳极化保护涂层可由氧化铝或氮化铝形成。
自由基导管108为盖体组件112的一部分,盖体组件112也包括自由基空腔110、顶板114、盖缘(lid rim)116及双区喷淋头118。自由基导管108可包含实质上不与自由基反应的材料。例如,自由基导管108可包含AlN、SiO2、Y2O3、MgO、阳极化Al2O3、蓝宝石、陶瓷(含有Al2O3、蓝宝石、AlN、Y2O3、MgO或塑料中的一者或多者)。合适的SiO2材料的代表性范例为石英。替代或附加地,自由基导管108在表面上可具有涂层,在操作中接触自由基。所述涂层也可包含AlN、SiO2、Y2O3、MgO、阳极化Al2O3、蓝宝石、陶瓷(含有Al2O3、蓝宝石、AlN、Y2O3、MgO或塑料中的一者或多者)。若使用涂层的话,涂层的厚度可介于约1μm与约1mm之间。可使用喷射涂覆工艺来施加涂层。自由基导管108可被设置在自由基导管支撑构件120内并被自由基导管支撑构件120所支撑。自由基导管支撑构件120可设置在顶板114上,而顶板114靠在盖缘116上。
自由基空腔110位于自由基导管108下方并耦接至自由基导管108,且在自由基源104中产生的自由基经由自由基导管108行进至自由基空腔110。自由基空腔110可由顶板114、盖缘116及双区喷淋头118所界定。视情况,自由基空腔110可包括衬里122。衬里122可覆盖顶板114及盖缘116的位于自由基空腔110内的表面。衬里122可包含实质上不与自由基反应的材料。例如,衬里122可包含AlN、SiO2、Y2O3、MgO、阳极化Al2O3、蓝宝石、陶瓷(含有Al2O3、蓝宝石、AlN、Y2O3、MgO或塑料中的一者或多者)。替代或附加地,与自由基接触的自由基空腔110的表面可由实质上不与自由基反应的材料构成或涂覆有实质上不与自由基反应的材料。例如,所述表面可由AlN、SiO2、Y2O3、MgO、阳极化Al2O3、蓝宝石、陶瓷(含有Al2O3、蓝宝石、AlN、Y2O3、MgO或塑料中的一者或多者)构成,或涂覆有AlN、SiO2、Y2O3、MgO、阳极化Al2O3、蓝宝石、陶瓷(所述陶瓷含有Al2O3、蓝宝石、AlN、Y2O3、MgO或塑料中的一者或多者)。若使用涂层的话,涂层的厚度可介于约1μm与约1mm之间。通过不消耗所产生的自由基,增加对基板(设置于处理腔室102中)的自由基通量(radical flux)。
可将离子过滤器123设置于自由基空腔110中,介于顶板114与双区喷淋头118之间。离子过滤器123可以是电性接地的经穿孔的板。若自由基是在等离子体内产生,则在所述等离子体内产生的离子、电子及紫外线辐射可被离子过滤器123阻挡,以仅将自由基导向双区喷淋头118,并防止对已沉积的膜造成损害。离子过滤器123也可控制穿过离子过滤器123的自由基的数量。自由基接着穿过多个管体124以进入处理区域128,所述多个管体124设置于双区喷淋头118中。双区喷淋头118可进一步包括多个开口126,多个开口126的直径小于多个管体124的直径。多个开口126连接至内容积(未绘示),内容积未与多个管体124流体连通。一个或多个流体源119可耦接至双区喷淋头118,用以将流体混合物导入处理腔室102的处理区域128。流体混合物可包括前驱物、成孔剂(porogen)及/或载体流体。流体混合物可以是气体及液体的混合物。
处理腔室102可包括盖体组件112、腔室主体130及支撑组件132。支撑组件132可至少部分地设置于腔室主体130内。腔室主体130可包括狭缝阀135,以提供通路至处理腔室102的内部。腔室主体130可包括衬里134,衬里134可覆盖腔室主体130的内部表面。衬里134可包括一个或多个孔136以及形成于衬里134中的泵送通道138,泵送通道138与真空系统140流体连通。孔136提供流动路径以便气体进入泵送通道138,泵送通道138可提供出口给处理腔室102内的气体。
真空系统140可包括真空端口142、阀144及真空泵146。真空泵146经由真空端口142与泵送通道138流体连通。孔136允许泵送通道138与腔室主体130内的处理区域128流体连通。处理区域128可由双区喷淋头118的下表面148与支撑组件132的上表面150所界定,且处理区域128被衬里134包围。
支撑组件132可包括支撑构件152,以支撑基板(未绘示),以在腔室主体130内处理基板。基板可以是任何标准晶片尺寸,例如,例如,300mm。或者,基板可大于300mm,如450mm或更大。根据操作温度,支撑构件152可包含氮化铝(AlN)或铝。支撑构件152可经配置以夹持基板,且支撑构件152可以是静电夹盘或真空夹盘。
支撑构件152可经由轴杆156耦接举升机构154,轴杆156延伸穿过置中的开口158,置中的开口158形成于腔室主体130的底表面中。举升机构154可通过风箱(bellow)160而弹性地密封至腔室主体130,风箱160防止真空从轴杆156周围泄漏。举升机构154允许支撑构件152在腔室主体130内于处理位置与较低的递送位置之间垂直移动。递送位置稍低于狭缝阀135的开口。在操作期间,为了最大化基板表面处的自由基通量,可使介于基板与双区喷淋头118之间的间隔最小化。例如,所述间隔可介于约100mm与约5,000mm之间。举升机构154能够转动轴杆156,轴杆156进而转动支撑构件152,从而导致设置于支撑构件152上的基板在操作期间被转动。
一个或多个加热元件162及冷却通道164可嵌入支撑构件152中。加热元件162及冷却通道164可被用来控制操作期间的基板的温度。加热元件162可以是任何合适的加热元件,如一或多种阻式加热元件。加热元件162可被连接到一个或多个电源(未绘示)。加热元件162可被单独地控制,以具有对多区域加热或冷却的独立加热及/或冷却控制。由于具有对多区域加热及冷却的独立控制能力,可在任何给定的工艺条件下增进基板温度轮廓(temperature profile)。冷却剂可流经通道164,以冷却基板。支撑构件152可进一步包括气体通路,所述气体通路延伸至上表面150,以将冷却气体流至基板的背侧。
可将RF源耦接至双区喷淋头118或支撑构件152。RF源可以是低频率、高频率或超高频率。在一个实施例中,双区喷淋头118耦接至RF源且支撑构件152接地,如图1所示。在另一实施例中,双区喷淋头118接地,且支撑构件152耦接至RF源。在任一实施例中,在操作期间,可于处理区域128中,介于双区喷淋头118与支撑构件152之间,形成电容式耦合的等离子体。当自由基源为远程等离子体源时,于处理区域128中形成的电容式耦合的等离子体可附加至自由基源中形成的等离子体。可以用DC源来偏压支撑构件152,以增加离子轰击。
图2绘示根据本公开内容的实施例的用以调节图1的自由基源104的方法200。应注意到,方法200可应用至位在处理腔室远程的任何远程等离子体源,其中基板设置在处理腔室中。可在处理腔室中的各基板处理(如,沉积或蚀刻工艺)之前、期间或之后进行方法200。在某些实施例中,可在已处理预定数目的基板(如约2至约15个基板)之后,周期性地进行方法200。在这样的情况中,可在基板不存在于处理腔室中的情况下进行方法200。应注意到,因为可在不偏离本公开内容的基本范围的情况下加入、删除及/或重新排序一个或多个步骤,所以图2中所绘示的步骤顺序不欲作为对本文所描述的公开内容的范围的限制。
于框202,可视情况用清洁气体清洗自由基源104。可自清洁气体源经由一个或多个气体入口106将清洁气体导入自由基源104。在适于有效地从自由基源104移除任何不想要的残留物(debris)或副产物的工艺条件下,清洁气体可经热激活和/或等离子体辅助。范例清洁气体可包括,但不限于NF3、NH3、F2、CF4、C2F6、C4F8、SF6、CHF3、CF6、H2、CCl4、C2Cl6或前述气体的任何组合。视情况,清洁气体可进一步包括惰性气体,如氩或氦。在某些实施例中,如将于以下框204处所描述般,清洁气体可与调节气体一起被引入自由基源104。在某些实施例中,可在处理腔室102中进行以上清洁工艺。可进行清洁工艺达约3秒至约300秒,取决于每次清洁之间在处理腔室中处理的基板数量。
于框204,可自调节气体源经由一个或多个气体入口106将调节气体导入自由基源104。在多种实施例中,调节气体可包括含氧气体、含氮气体或该等气体的组合。范例含氧气体可包括,但不限于以下各项中的一者或多者:氧(O2)气体、臭氧(O3)气体、氧化亚氮(N2O)、一氧化氮(NO)、一氧化碳(CO)、二氧化碳(CO2)、水蒸气(H2O)或该等气体的任何组合。范例含氮气体可包括,但不限于以下各项中的一者或多者:氨(NH3)、氮(N2)、联氨(N2H4)、一氧化氮(NO)、氧化亚氮(N2O)、二氧化氮(NO2)或该等气体的任何组合。若自由基源104的阳极化保护性涂层为氧化铝的话,使用含有含氧气体的调节气体可以是有利的。若自由基源104的阳极化保护性涂层为氮化铝的话,使用含有含氮气体的调节气体可以是有利的。在某些实施例中,包含含氧气体的调节气体可被使用在自由基源104的阳极化保护性涂层为氮化铝的情况中。在某些实施例中,包含含氮气体的调节气体可被使用在自由基源104的阳极化保护性涂层为氧化铝的情况中。
化学惰性气体,如氦气、氮气或氩气,可与调节气体一起流入处理腔室。若使用惰性气体的话,可以约1:1至约1:20(如约1:6至约1:15,例如约1:10)的惰性气体对调节气体的比例来引入惰性气体。在一个实施例中,可以介于约2000sccm与约20000sccm之间的流速且在约0.1托耳至约20托耳的腔室压力下将调节气体引入自由基源104。
于框206,可在自由基源104中从调节气体产生等离子体,以钝化或恢复自由基源104的内壁表面。在某些实施例中,代替在自由基源104内点燃等离子体,可使处于激发态的调节气体从远程等离子体源(与自由基源分离)流入自由基源104。本文所用的术语“激发态(excited state)”指的是气体中的至少某些气体分子处于振动激发、解离及/或离子化状态。或者,可使用无等离子体工艺来进行自由基源104的内壁表面的钝化。也就是说,将调节气体引入自由基源104,并在适于使调节气体热分解的升高的温度下激发或解离调节气体。
在自由基源104为电容式耦合的等离子体(CCP)类型的来源的情况中,于钝化期间,可将自由基源104维持在约0.1托耳至约20托耳的压力(例如约1托耳至约10托耳),及约250℃至约400℃的温度下。若使用RF功率来解离调节气体的话,供应至自由基源104的RF功率密度可介于约0.001W/cm2至约5W/cm2,如自约0.01W/cm2至约至约1W/cm2,例如约0.04W/cm2至约0.07W/cm2。
可根据被处理基板的数量(即,基板处理时间),和/或在各次钝化工艺之间于处理腔室102内的基板上进行的工艺(如,沉积或蚀刻工艺)的持续时间(即,基板处理时间),来变化自由基源104的内壁表面的钝化的处理时间。在多数情况中,钝化工艺时间可介于约2秒与约30秒之间,如约3秒至约25秒,例如约10秒。在多种实施例中,钝化工艺时间与基板处理时间可处在约1:5至约1:30的比例,如约1:8至约1:20,例如约1:12。
于框208,在自由基源104的内壁表面已被钝化或恢复后,可于下游处理腔室(如,图1中的处理腔室102)中,在来自一批次的基板中的N数量的基板(其中N为基板的整数数量)上进行一系列的工艺。在一个实施例中,N的范围介于1与20个基板之间,如介于约3个基板与约10个基板之间,例如约5个基板。所述工艺可以是任何沉积和/或蚀刻工艺,用于沉积或蚀刻,例如,氧化物或氮化物材料、含硅材料或含碳材料(前述材料可经掺杂或未经掺杂)。沉积和/或蚀刻工艺可使用来自自由基源的自由基。在一个示例中,沉积工艺为可流动性化学气相沉积(CVD),使用含硅前驱物及NH3/O2/N2/H2氧化剂化学物来沉积介电材料。于沉积或蚀刻工艺期间,可将含氧气体和/或含氮气体流入自由基源104,以稳定等离子体。
于框210,在进行一系列的沉积/蚀刻工艺之后,可视情况使用清洁工艺净化处理腔室102的内壁表面。清洁工艺可与就框202于上文描述的清洁工艺相同。在一个示例中,可使用清洁气体来清洁处理腔室102,所述清洁气体包含NF3、氨或该等气体的组合。在处理腔室102的清洁期间,可将含氧气体(如就框204于上文描述的含氧气体)流入自由基源104来调节自由基源104的内壁表面。
于清洁期间,可以介于约2000sccm与约20000sccm之间的流速将清洁气体引入处理腔室102。可将处理腔室102维持在约0.1托耳至约20托耳的压力下。可以约0.001W/cm2至约5W/cm2(如自约0.01W/cm2至约1W/cm2,例如,约0.04W/cm2至约0.07W/cm2)的密度将RF功率(若使用的话)供应至处理腔室102,以激活清洁气体。
可重复框202至框210处描述的工艺,直到以所述工艺处理完批次基板中的最后一个基板并将该基板移出处理腔室102为止。
构想到多种工艺且可将多种工艺加入方法200。在某些实施例中,在沉积或蚀刻工艺前(即,在框208之前),或在处理腔室102被清洁之后(即,在框210之后),可视情况执行调适工艺(seasoning process),以在经清洁的处理腔室102的壁上沉积调适层(seasoninglayer)。在这样的例子中,可在调适工艺之前和/或之后立刻进行如框204及206所描述的钝化工艺。保护性层可根据处理腔室102中所进行的工艺而变化。例如,若欲在基板上沉积含氮层,则可在处理腔室102的腔室表面上沉积氮化硅的调适层。调适层可作为黏合层,使得相较于黏着至处理腔室102的内部腔室表面,后续沉积的含氮材料更倾向于黏着至调适层。因此,在基板处理期间,残余含氮材料较不会被去除(dislodge)。可在处理腔室102中无基板时执行调适工艺。或者,在调适工艺期间,可将牺牲(虚设)基板安置于处理腔室102中。
在沉积/蚀刻工艺之后于处理腔室102中进行清洁工艺的情况中,可进行任选的调节工艺,以移除来自清洁工艺的非期望的含氟(F)或氮(N)污染物,该等污染物粘合至处理腔室102的腔室表面或或吸附于处理腔室102的腔室表面上。在一个实施例中,可通过将1200sccm的氢流入处理腔室102并持续30秒,使用300瓦的功率创建等离子体,而在处理腔室102中产生含氢等离子体。氢等离子体与处理腔室102中存在的氟反应,并形成挥发性含HF蒸气,所述挥发性含HF蒸气可经由腔室排放部容易地移除。可将处理腔室102维持在用于后续沉积/蚀刻工艺的温度下,并将处理腔室102维持在约1至10托耳的压力下。介于喷淋头118与支撑组件132之间的电极间隔可以是约800密耳至1500密耳。
本公开内容的益处提供了通过将远程等离子体产生器的内壁表面暴露于等离子体以钝化或恢复所述内壁表面的方法,所述等离子体可由调节气体形成,调节气体可包含含氧气体、含氮气体或该等气体的组合。所述创造性工艺可恢复并稳定远程等离子体源的内壁表面的表面状况。因此,即使在等离子体清洁环境中(所述等离子体清洁环境可致使下游反应器腔室中的颗粒产生最小化),仍可增进保护性阳极化铝涂层的寿命。所述创造性工艺因而可在后续沉积期间达成增进沉积速率、增进沉积均匀性,及增进处理腔室中的等离子体耦合效率。藉此,获得晶片至晶片之间的可重复且稳定的等离子体源性能。
虽然可进行频繁的腔室清洁来稳定腔室状况,但是腔室清洁化学物(如NF3)将会使阳极化涂层以更快的速率退化。在远程等离子体源使用AlN等离子体块体或阳极化等离子体块体的某些情况中,远程等离子体源内的表面状况将随着沉积或清洁化学物在时间上改变。等离子体块体的表面状况的此改变不会提供可重复的等离子体性能,从而导致时间上不一致的晶片对晶片性能。
尽管前述内容针对本公开内容的实施例,可在不背离本公开内容的基本范围的情况下设计本公开内容的其他及进一步的实施例,且本公开内容的范围由所附权利要求书确定。
Claims (16)
1.一种用于处理基板的方法,包含下列步骤:
(a)将远程等离子体源的内壁表面暴露于包含NF3和NH3的清洁气体;
(b)将所述远程等离子体源的所述内壁表面暴露于处于激发态的调节气体,以钝化所述远程等离子体源的所述内壁表面,其中所述远程等离子体源经由导管耦接至基板处理腔室,且所述调节气体包含含氧气体、含氮气体、或前述气体的组合;
(c)在利用所述调节气体钝化所述远程等离子体源的所述内壁表面之后,使用所述远程等离子体源中产生的自由基,在所述处理腔室中对来自一批次的基板的N个数量的基板进行一系列的沉积或蚀刻工艺,其中N是基板的整数数量且介于1与20之间;
(d)重复步骤(a)至(c),直到所述批次的基板中的最后一个基板经处理并从所述处理腔室移出为止;以及
(e)在所述批次的基板中的所述最后一个基板经处理并且从所述处理腔室移出之后,利用包含NF3和NH3的清洁气体净化所述处理腔室的内壁表面。
2.如权利要求1所述的方法,其中所述远程等离子体源的所述内壁表面由氧化铝或氮化铝形成,且所述调节气体是含氧气体。
3.如权利要求2所述的方法,其中所述含氧气体包含:氧(O2)气体、臭氧(O3)气体、氧化亚氮(N2O)、一氧化氮(NO)、一氧化碳(CO)、二氧化碳(CO2)、水蒸气(H2O)、或前述气体的任何组合。
4.如权利要求1所述的方法,其中所述远程等离子体源的所述内壁表面是由氧化铝或氮化铝形成,且所述调节气体是含氮气体。
5.如权利要求4所述的方法,其中所述含氮气体包含:氨(NH3)、氮(N2)、联氨(N2H4)、一氧化氮(NO)、氧化亚氮(N2O)、或二氧化氮(NO2)、或前述气体的任何组合。
6.如权利要求1所述的方法,其中所述调节气体进一步包含化学惰性气体,且所述惰性气体处于1:6至1:15的惰性气体对调节气体比例。
7.如权利要求1所述的方法,其中所述远程等离子体源的所述内壁表面暴露于所述调节气体达3秒至25秒。
8.如权利要求1所述的方法,其中所述远程等离子体源的所述内壁表面的钝化时间与用于在N个数量的基板上进行一系列的工艺的处理时间处于1:5至1:30的比率。
9.一种用于处理基板的方法,包含下列步骤:
在不存在基板的情况下将包含氮化硅的调适层形成到处理腔室的腔室表面上;
将远程等离子体源的内壁表面暴露于调节气体,其中所述调节气体包含含氧气体、含氮气体、或前述气体的组合;
在所述远程等离子体源中,从所述调节气体产生等离子体,以钝化所述远程等离子体源的所述内壁表面;
在利用所述调节气体钝化所述远程等离子体源的所述内壁表面之后,使用所述远程等离子体源中产生的自由基,在所述处理腔室中对N个数量的基板进行一系列的沉积或蚀刻工艺,其中N是基板的整数数量且介于1与20之间;以及
将所述处理腔室的腔室表面暴露于清洁气体和含氧气体,其中所述清洁气体包含NF3和NH3。
10.如权利要求9所述的方法,其中所述调节气体进一步包含化学惰性气体,且所述惰性气体处于1:6至1:15的惰性气体对调节气体比率。
11.如权利要求9所述的方法,其中所述远程等离子体源的所述内壁表面的钝化时间与用于在N个数量的基板上进行一系列的工艺的处理时间处于1:5至1:30的比率。
12.一种用于处理基板的方法,包含下列步骤:
将远程等离子体源的内壁表面暴露于处于激发态的调节气体,以钝化所述远程等离子体源的所述内壁表面,其中所述远程等离子体源经由导管耦接至处理腔室,且所述调节气体包含一或多种含氧气体、一或多种含氮气体、或前述气体的组合;以及
在利用所述调节气体钝化所述远程等离子体源的所述内壁表面之后,使用所述远程等离子体源中产生的自由基,在所述处理腔室中对N个数量的基板进行一系列的沉积或蚀刻工艺。
13.如权利要求12所述的方法,其中所述远程等离子体源的所述内壁表面由氧化铝或氮化铝形成,且所述调节气体是所述一或多种含氧气体,并且所述一或多种含氧气体包含:氧(O2)气体、臭氧(O3)气体、氧化亚氮(N2O)、一氧化氮(NO)、一氧化碳(CO)、二氧化碳(CO2)、水蒸气(H2O)、或前述气体的任何组合。
14.如权利要求12所述的方法,其中所述远程等离子体源的所述内壁表面由氧化铝或氮化铝形成,且所述调节气体是所述一或多种含氮气体,并且所述一或多种含氮气体包含:氨(NH3)、氮(N2)、联氨(N2H4)、一氧化氮(NO)、氧化亚氮(N2O)、或二氧化氮(NO2)、或前述气体的任何组合。
15.如权利要求12所述的方法,其中所述调节气体进一步包含化学惰性气体,且所述惰性气体处于1:6至1:15的惰性气体对调节气体比例。
16.如权利要求12所述的方法,进一步包含下列步骤:
在将远程等离子体源的内壁表面暴露于调节气体之前,将所述处理腔室的内壁表面暴露于清洁气体,其中所述清洁气体包含NF3、NH3、F2、CF4、C2F6、C4F8、SF6、CHF3、CF6、H2、CCl4、C2Cl6、或前述气体的任何组合。
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CN111286719B (zh) | 2022-02-08 |
TWI689613B (zh) | 2020-04-01 |
CN111286719A (zh) | 2020-06-16 |
TWI724801B (zh) | 2021-04-11 |
TW202033814A (zh) | 2020-09-16 |
US10192717B2 (en) | 2019-01-29 |
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