CN106575555B - 电子部件以及电子部件的制造方法 - Google Patents
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Abstract
提供具备具有所希望的电阻值的薄膜电阻元件的电子部件。电阻薄膜(10)的与连接电极(11、12)连接的连接界面侧的Ni的浓度比该界面的相反侧的该浓度高,因此,能够使电阻薄膜(10)的与连接电极(11、12)连接的连接界面侧以及连接电极(11、12)各自的逸出功接近。因此,能够防止在电阻薄膜(10)以及连接电极(11、12)的连接界面因逸出功的差异而产生的接触电阻增大。因而,能够提供具备具有电阻薄膜(10)的设计上的所希望的电阻值的薄膜电阻元件(R1)的电子部件(100)。
Description
技术领域
本发明涉及具备薄膜电阻元件的电子部件及其制造方法。
背景技术
以往,提供了具备薄膜电阻元件的各种电子部件(例如参照专利文献1)。例如,图3所示的以往的电子部件500所具备的薄膜电阻元件具备:形成在绝缘层501上,以Ni、Cr、Si为主成分的多个电阻薄膜502;以及形成在电阻薄膜上,以Ni为主成分的连接电极503。并且,利用形成在连接电极503上的Au/Pd外部电极504使薄膜电阻元件外部连接。
专利文献1:日本特开2001-318014号公报(第0005段,图2等)
如图3所示,电阻薄膜502与外部电极504经由连接电极503连接,由此,在薄膜电阻元件(电阻薄膜502)与外部电极504之间电阻值增大的情况得以抑制,因此,在外部电极504间中测定的薄膜电阻元件的电阻值的偏差减小。但是,如果形成电阻薄膜502而具有比较大的电阻值,则担心电阻薄膜502与连接电极503之间的接触电阻增大。在该情况下,无法形成具有所希望的电阻值的薄膜电阻元件。
发明内容
本发明是鉴于上述的课题而完成的,其目的在于提供一种具备具有所希望的电阻值的薄膜电阻元件的电子部件及其制造方法。
为了实现上述的目的,本发明的电子部件,其目的在于,上述电子部件具备薄膜电阻元件,该薄膜电阻元件具有以Ni、Cr、Si为主成分的电阻薄膜、以及形成在上述电阻薄膜上、与该电阻薄膜电连接且以Ni为主成分的连接电极,上述电阻薄膜的与上述连接电极连接的连接界面侧的上述Ni的浓度比上述界面的相反侧的上述Ni的浓度高。
在如此构成的发明中,电阻薄膜的与连接电极连接的连接界面侧的Ni的浓度比该界面的相反侧的Ni的浓度高,因此,能够使电阻薄膜的与连接电极连接的连接界面侧以及连接电极各自的逸出功接近。因此,能够防止在电阻薄膜以及连接电极的连接界面因逸出功的差异而产生的接触电阻增大。因而,能够提供具备具有电阻薄膜的设计上的所希望的电阻值的薄膜电阻元件的电子部件。
此外,也可以构成为,上述电阻薄膜包含50重量%以上、90重量%以下的Si。
如此一来,电阻薄膜中的Si的含有量越多,则电阻薄膜的电阻率越增加,能够形成高电阻值的薄膜电阻元件。此外,能够防止在电阻薄膜与连接电极的连接界面处接触电阻增大,通过将电阻薄膜的电阻值设定为预定的高电阻值,能够形成高精度地具备预定的高电阻值的薄膜电阻元件。
此外,也可以构成为,上述电阻薄膜的电阻率为10-5Ωm以上、10-1Ωm以下。
据此,能够提供具备具有实用的电阻值的薄膜电阻元件的电子部件。
此外,也可以构成为,上述电子部件具备:第1外部电极~第4外部电极;可变容量型的薄膜电容器元件,其被串联连接在上述第1外部电极与上述第2外部电极间;第1上述薄膜电阻元件,其一端与上述第3外部电极连接;以及第2上述薄膜电阻元件,其一端与上述第4外部电极连接,上述第1薄膜电阻元件与上述第2薄膜电阻元件各自的另一端与上述薄膜电容器元件两端分别连接,以便在上述第1薄膜电阻元件的另一端与上述第2薄膜电阻元件的另一端间插入上述薄膜电容器元件。
当如此构成时,能够提供具备将第1外部电极、第2外部电极作为输入输出端子的可变容量型的薄膜电容器元件的电子部件。即,对第3外部电极、第4外部电极间的电压进行调整而对经由第1、第2薄膜电阻元件施加于薄膜电容器元件的两端的电压进行任意调整,由此能够对薄膜电容器元件的容量进行调整。
此外,本发明的电子部件的制造方法,其特征在于,上述电子部件具备薄膜电阻元件,该薄膜电阻元件具有以Ni、Cr、Si为主成分的电阻薄膜、以及形成在上述电阻薄膜上、与该电阻薄膜电连接且以Ni为主成分的连接电极,使用一个蒸发源使由以Ni、Cr、Si为主成分的混合物构成的蒸镀材料蒸发或者升华并蒸镀于树脂层上,从而形成上述电阻薄膜。
在如此构成的发明中,通过使用一个蒸发源使与以Ni、Cr、Si为主成分的混合物构成的蒸镀材料蒸发或者升华进行电阻薄膜的成膜,随之蒸发温度最高的Ni的浓度增大。因此,随着电阻薄膜的成膜进行,所成膜的膜中的Ni的浓度逐渐增大。因此,能够在树脂层上简单地形成朝向形成连接电极的表层侧Ni的浓度逐渐增大的电阻薄膜。因而,能够简单地制造具备具有电阻薄膜的设计上的所希望的电阻值的薄膜电阻元件的电子部件。
根据本发明,使电阻薄膜的与连接电极连接的连接界面侧以及连接电极各自的逸出功接近,防止电阻薄膜以及连接电极的连接界面处的接触电阻增大,由此能够提供具备具有电阻薄膜的设计上的所希望的电阻值的薄膜电阻元件的电子部件。此外,通过使用一个蒸发源使由形成电阻薄膜的全部的材料的混合物构成的蒸镀材料蒸发或者升华而形成电阻薄膜,由此能够简单地制造具备具有电阻薄膜的设计上的所希望的电阻值的薄膜电阻元件的电子部件。
附图说明
图1是本发明的一实施方式所涉及的电子部件的截面图。
图2是示出图1的电子部件的等效电路的图。
图3是示出以往的电子部件的图。
具体实施方式
参照图1以及图2对本发明的一实施方式进行说明。图1是本发明的一实施方式所涉及的电子部件的截面图,图2是示出图1的电子部件的等效电路的图。另外,在图1中,为了便于说明而省略了薄膜电阻元件R2、第3、第4外部电极21、22、引出电极17、18的图示。
(结构)
对电子部件100的概要结构进行说明。
电子部件100具备:设置在玻璃基板、陶瓷基板、树脂基板、Si基板等的绝缘基板1上的1个可变容量型的薄膜电容器元件C;以及第1、第2薄膜电阻元件R1、R2(相当于本发明的“薄膜电阻元件”)。
薄膜电容器元件C由在绝缘基板1的一面上的预定区域通过Pt薄膜而形成的电容器电极层2、(Ba、Sr)TiO3(以下称作“BST”)电介质层3、在BST电介质层3上通过Pt薄膜而形成的电容器电极层4形成。
此外,薄膜电容器元件C通过由SiO2耐湿保护膜形成的保护层5覆盖,在保护层5上层叠树脂层6。此外,在树脂层6的上表面形成有经由形成于保护层5以及树脂层6的通孔与薄膜电容器元件C的上侧的电容器电极层4连接的Cu/Ti引出电极7、以及与薄膜电容器元件C的下侧的电容器电极层2连接的Cu/Ti引出电极8。此外,覆盖引出电极7、8的树脂层9层叠于树脂层6。
第1薄膜电阻元件R1由形成于树脂层9的一面上的预定区域且以Ni、Cr、Si为主成分的电阻薄膜10、以及形成在电阻薄膜10上且与该电阻薄膜10电连接的连接电极11、12形成。连接电极11、12由以Ni为主成分且包含Cr的薄膜形成。在该实施方式中,电阻薄膜10的Ni、Cr、Si的混合比按照重量比被调整为1:2:7。也就是说,电阻薄膜10整体的平均组成比(重量比)被调整为Ni:Cr:Si=1:2:7。连接电极11、12的Ni、Cr的混合比按照重量比被调整为8:2。
此外,在该实施方式中,形成电阻薄膜10以使得电阻薄膜10中Ni的浓度从与树脂层9密接的下表面侧朝形成连接电极11、12的上表面侧逐渐变高。因而,在电阻薄膜10的厚度方向赋予Ni浓度梯度,电阻薄膜10中的与以Ni为主成分的连接电极11、12连接的连接界面侧的Ni的浓度比该界面的相反侧的Ni的浓度高。
另外,利用连接电极11形成第1薄膜电阻元件R1的一端,利用连接电极12形成第1薄膜电阻元件R1的另一端。第2薄膜电阻元件R2也与第1薄膜电阻元件R1同样地形成在树脂层9上。另外,在该实施方式中,2个薄膜电阻元件R1、R2的两方都形成在树脂层9上,但第1、第2薄膜电阻元件R1、R2也可以分别形成在不同的树脂层上。
此外,第1、第2薄膜电阻元件R1、R2由层叠在树脂层9上的树脂层13覆盖。此外,在树脂层13的上表面形成有经由形成于树脂层13的通孔与第1薄膜电阻元件R1的一端(连接电极11)连接的Cu/Ti引出电极14。此外,在树脂层13的上表面形成有经由形成于树脂层9、13的通孔连接第1薄膜电阻元件R1的另一端(连接电极12)与引出电极8(电容器电极层2)的Cu/Ti引出电极15。
此外,在树脂层13的上表面形成有经由形成于树脂层9、13的通孔与引出电极7(电容器电极层4)连接的Cu/Ti引出电极16。此外,形成有经由形成于树脂层13的通孔与第2薄膜电阻元件R2的一端(连接电极11)连接的Cu/Ti引出电极17,不过在对图1中对此省略图示。此外,形成有经由形成于树脂层9、13的通孔连接第2薄膜电阻元件R2的另一端(连接电极12)与引出电极7(电容器电极层4)的Cu/Ti引出电极18,不过在对图1中对此省略图示。
此外,在引出电极16上形成有Au第1外部电极19,在引出电极15上形成有Au第2外部电极20。此外,在引出电极14上形成有第3外部电极21,在引出电极17上形成有第4外部电极22,不过图1中对此省略图示。并且,在树脂层13上层叠由树脂形成的保护层23,以便覆盖各引出电极14~18以及各外部电极19~22的端缘部分。
在如以上那样构成的电子部件100中,如图2所示,在第1、第2外部电极19、20间串联连接薄膜电容器元件C。并且,第1、第2薄膜电阻元件R1、R2各自的另一端与薄膜电容器元件C的两端分别连接,以使得薄膜电容器元件C插入至一端与第3外部电极21连接的第1薄膜电阻元件R1的另一端和一端与第4外部电极22连接的第2薄膜电阻元件R2的另一端之间。具体而言,薄膜电阻元件R1的另一端(连接电极12)与薄膜电容器元件C的一端(电容器电极层2)连接,薄膜电阻元件R2的另一端(连接电极12)与薄膜电容器元件C的另一端(电容器电极层4)连接,在第1、第2薄膜电阻元件R1、R2的另一端间插入薄膜电容器元件C。
(制造方法)
对电子部件100的制造方法的一例进行说明。另外,在该实施方式中,在使用大面积的绝缘基板1形成多个电子部件100的集合体后实施单片化,形成电子部件100。
首先,在绝缘基板1上的预定区域形成下侧的电容器电极层2、电介质层3、上侧的电容器电极层4而形成薄膜电容器元件C,形成覆盖薄膜电容器元件C的保护层5。接着,形成通过光刻形成了通孔的聚苯并恶唑系感光性绝缘膜构成的树脂层6,进行用于固化树脂层的热处理(320℃,30分钟,N2氛围)。
接着,通过干蚀刻除去树脂层6的通孔内的SiO2耐湿保护膜,使用溅射法对形成引出电极7、8的Ti膜进行成膜,对Cu膜进行成膜。并且,通过基于光刻的蚀刻进行图案形成,形成引出电极7、8。接着,形成由酚醛系感光性绝缘膜构成的树脂层9,进行用于固化树脂层的热处理(200℃,60分钟,N2氛围)。
接着,形成剥离抗蚀剂,使用一个蒸发源使由以Ni、Cr、Si为主成分的混合物构成的蒸镀材料蒸发或者升华,由此通过剥离法蒸镀形成电阻薄膜10。接着,形成剥离抗蚀剂,通过剥离法蒸镀形成包含Ni、Cr的连接电极11、12。
接着,形成由通过光刻而形成了通孔的酚醛系感光性绝缘膜构成的树脂层13,进行用于固化树脂层的热处理(200℃,60分钟,N2)。并且,使用溅射法对形成引出电极14~18的Ti膜进行成膜,对Cu膜进行成膜。
接着,图案形成在所形成的Cu/Ti膜上的预定位置设置有开口的抗蚀剂,通过电镀法在Cu/Ti膜上的预定位置形成第1~第4外部电极19~22。并且,在除去抗蚀剂之后,通过基于光刻的蚀刻图案形成Cu/Ti膜,形成引出电极14~18。
并且,利用由通过光刻而形成了外部电极露出部的酚醛系感光性绝缘膜构成的树脂形成保护层23,进行用于固化树脂层的热处理,之后,利用切割机对各电子部件100的每个实施单片化,完成电子部件100。
如此构成的电子部件100使用焊锡或引线接合等安装于其他的配线基板等,而作为将第1、第2外部电极19、20作为输入输出端子的可变容量元件加以使用。即,对第3、第4外部电极21、22间的电压进行调整而对经由第1、第2薄膜电阻元件R1、R2施加于薄膜电容器元件C的两端的电压进行任意调整,从而能够对薄膜电容器元件C的容量进行调整。
如以上那样,在该实施方式中,赋予浓度梯度以使得电阻薄膜10中的与连接电极11、12连接的连接界面侧的Ni量比该界面的相反侧的Ni量多,因此,能够保持电阻薄膜10的平均组成比从而确保电阻体图案本身的高电阻率,并且增加该界面处的Ni浓度,使电阻薄膜10的与连接电极11、12连接的连接界面侧以及以Ni为主成分的连接电极11、12各自的逸出功接近。逸出功是从表面取出电子所需的最小能量,逸出功差越小则界面的能垒越小。因此,能够防止在电阻薄膜10以及连接电极11、12的连接界面因逸出功的差异而产生的接触电阻增大。因而,能够提供具备具有电阻薄膜10的设计上的所希望的电阻值的第1、第2薄膜电阻元件R1、R2的电子部件100。另外,考虑到连接界面的接触电阻与连接电极整体的高电阻率的平衡,电阻薄膜10中的与连接电极11、12连接的连接界面侧的Ni浓度同该界面的相反侧的Ni浓度之差优选为0.05~3重量%的程度。
此外,电阻薄膜10中的Si的含有量越多,则电阻薄膜10的电阻率越增加,因此能够形成高电阻值的第1、第2薄膜电阻元件R1、R2,不过在该实施方式中,能够防止在电阻薄膜10与连接电极11、12的连接界面处接触电阻的增大。因而,通过将电阻薄膜10的电阻值设定为预定的高电阻值,能够形成高精度地具备预定的高电阻值的第1、第2薄膜电阻元件R1、R2。另外,电阻薄膜10也可以包含50重量%以上、90重量%以下的Si,以便形成为高电阻值。
此外,通过将电阻薄膜10的电阻率设定为10-5Ωm以上、10-1Ωm以下,能够提高具备具有实用的电阻值的第1、第2薄膜电阻元件R1、R2的电子部件100。
此外,通过使用一个蒸发源使由以Ni、Cr、Si为主成分的混合物构成的蒸镀材料蒸发或者升华的方法(单效真空蒸镀法),进行电阻薄膜10的成膜,随之蒸发温度最高的Ni(Ni:1510℃,Cr:1205℃,Si:1343℃;蒸气压力为1Pa的温度)的浓度增大。因此,随着电阻薄膜10的成膜进展的进行,所成膜的膜中的Ni的浓度逐渐增大。因此,能够将Ni的浓度朝向形成连接电极11、12的上表面侧逐渐增大的电阻薄膜10简单地形成在树脂层9上。因而,能够简单地制造具备具有电阻薄膜10的设计上的所希望的电阻值的第1、第2薄膜电阻元件R1、R2的电子部件1。
此外,能够不使用多效蒸镀源便形成由多个种类的金属成分构成的电阻薄膜10。此外,通过剥离法蒸镀形成电阻薄膜10。因而,能够以低成本形成图案精度高的电阻薄膜10。
另外,在电阻薄膜10上形成连接电极11、12之后进行加热处理,使连接电极11、12的例如Ni成分在电阻薄膜10中扩散,由此也能够增高电阻薄膜10的与连接电极11、12连接的连接界面侧的Ni的浓度,抑制电阻薄膜10与连接电极11、12的连接界面处的接触电阻增大。但是,存在因高温加热而损伤树脂层6、9的可能性,为了避免树脂层6、9损伤,需要制造工艺管理。此外,需要高温工艺。因而,电子部件1的制造成本增大。
另一方面,在该实施方式中,利用单效真空蒸镀法形成电阻薄膜10,由此不使用高温工艺而以在膜中的Ni(金属成分)的浓度分布产生梯度的状态形成电阻薄膜10本身。因而,无需对电阻薄膜进行成膜后的扩散等的加热工艺,因此不会增大制造成本,能够在树脂层9的一方面上形成具有浓度梯度的电阻薄膜10。
另外,本发明并不限定于上述的实施方式,只要不脱离其主旨,除了上述内容之外还可以进行各种变更。例如,也可以在第1、第2外部电极19、20间串联连接多个薄膜电容器元件C。在该情况下,只要适当追加必要数量的第1薄膜电阻元件R1以及/或者第2薄膜电阻元件R2以便在第1、第2薄膜电阻元件R1、R2的另一端间插入1个薄膜电容器元件C即可。此外,只要追加的第1薄膜电阻元件R1的一端与第3外部电极21连接,追加的第2薄膜电阻元件R2的一端与第4外部电极22连接即可。
此外,也可以仅由薄膜电阻元件形成电子部件。此外,在薄膜电阻元件的基础上,适当组合薄膜电容器元件、薄膜电感器元件、薄膜热敏电阻元件等的薄膜电路元件,由此能够提供构成各种电路的电子部件。在该情况下,薄膜电容器元件、薄膜电感器元件、薄膜热敏电阻元件的结构只要具有一般的薄膜电路元件的结构即可。
此外,也可以通过使用多效蒸发源将电阻薄膜10形成为电阻薄膜10中的Ni的浓度从电阻薄膜10与连接电极11、12连接的连接界面的相反侧朝向该连接界面侧逐渐增大。
此外,形成电介质层的电介质材料并不限定于上述的例子。例如,也可以利用BaTiO3、SrTiO3、PbTiO3等的电介质材料形成电介质层。
产业上的可利用性
能够将本发明广泛地应用于具备薄膜电阻元件的电子部件及其制造方法。
其中,附图标记说明如下:
9:树脂层;10:电阻薄膜;11、12:连接电极;19:第1外部电极;20:第2外部电极;21:第3外部电极;22:第4外部电极;100:电子部件;C:薄膜电容器元件;R1:第1薄膜电阻元件(薄膜电阻元件);R2:第2薄膜电阻元件(薄膜电阻元件)。
Claims (3)
1.一种电子部件,其特征在于,
所述电子部件具备薄膜电阻元件,该薄膜电阻元件具有电阻薄膜和连接电极,所述电阻薄膜具有一方主面和另一方主面,且以Ni、Cr、Si为主成分,所述连接电极形成在所述电阻薄膜的所述一方主面的一部分上,与该电阻薄膜电连接,并且以Ni为主成分,
所述电阻薄膜中的所述Ni的浓度从所述另一方主面朝向所述一方主面逐渐增大,
所述电阻薄膜包含50重量%以上90重量%以下的Si。
2.根据权利要求1所述的电子部件,其特征在于,
所述电阻薄膜的电阻率为10-5Ωm以上10-1Ωm以下。
3.根据权利要求1或2所述的电子部件,其特征在于,
所述电子部件具备:
第1外部电极~第4外部电极;
可变容量型的薄膜电容器元件,其被串联连接于所述第1外部电极与所述第2外部电极间;
第1所述薄膜电阻元件,其一端与所述第3外部电极连接;以及
第2所述薄膜电阻元件,其一端与所述第4外部电极连接,
所述第1薄膜电阻元件与所述第2薄膜电阻元件各自的另一端与所述薄膜电容器元件两端分别连接,以便在所述第1薄膜电阻元件的另一端与所述第2薄膜电阻元件的另一端间插入所述薄膜电容器元件。
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