CN106415823B - 半导体装置、积层型半导体装置、密封后积层型半导体装置以及这些装置的制造方法 - Google Patents

半导体装置、积层型半导体装置、密封后积层型半导体装置以及这些装置的制造方法 Download PDF

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CN106415823B
CN106415823B CN201580018117.5A CN201580018117A CN106415823B CN 106415823 B CN106415823 B CN 106415823B CN 201580018117 A CN201580018117 A CN 201580018117A CN 106415823 B CN106415823 B CN 106415823B
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semiconductor device
insulating layer
photo
penetrating electrode
semiconductor element
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CN106415823A (zh
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竹村胜也
曾我恭子
浅井聪
近藤和纪
菅生道博
加藤英人
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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