JP6031059B2 - 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 - Google Patents

半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 Download PDF

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JP6031059B2
JP6031059B2 JP2014071301A JP2014071301A JP6031059B2 JP 6031059 B2 JP6031059 B2 JP 6031059B2 JP 2014071301 A JP2014071301 A JP 2014071301A JP 2014071301 A JP2014071301 A JP 2014071301A JP 6031059 B2 JP6031059 B2 JP 6031059B2
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Japan
Prior art keywords
insulating layer
semiconductor device
electrode
semiconductor element
forming
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JP2014071301A
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English (en)
Japanese (ja)
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JP2015195238A5 (https=
JP2015195238A (ja
Inventor
竹村 勝也
勝也 竹村
曽我 恭子
恭子 曽我
淺井 聡
聡 淺井
和紀 近藤
和紀 近藤
菅生 道博
道博 菅生
加藤 英人
英人 加藤
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2014071301A priority Critical patent/JP6031059B2/ja
Priority to CN201580018117.5A priority patent/CN106415823B/zh
Priority to US15/126,116 priority patent/US10141272B2/en
Priority to PCT/JP2015/001433 priority patent/WO2015151426A1/ja
Priority to KR1020167027165A priority patent/KR102263433B1/ko
Priority to EP15772875.9A priority patent/EP3128548B1/en
Priority to TW104110257A priority patent/TWI648438B/zh
Publication of JP2015195238A publication Critical patent/JP2015195238A/ja
Publication of JP2015195238A5 publication Critical patent/JP2015195238A5/ja
Publication of JP6031059B2 publication Critical patent/JP6031059B2/ja
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JP2014071301A 2014-03-31 2014-03-31 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 Active JP6031059B2 (ja)

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KR1020167027165A KR102263433B1 (ko) 2014-03-31 2015-03-16 반도체장치, 적층형 반도체장치, 봉지후 적층형 반도체장치, 및 이들의 제조방법
US15/126,116 US10141272B2 (en) 2014-03-31 2015-03-16 Semiconductor apparatus, stacked semiconductor apparatus and encapsulated stacked-semiconductor apparatus each having photo-curable resin layer
PCT/JP2015/001433 WO2015151426A1 (ja) 2014-03-31 2015-03-16 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
CN201580018117.5A CN106415823B (zh) 2014-03-31 2015-03-16 半导体装置、积层型半导体装置、密封后积层型半导体装置以及这些装置的制造方法
EP15772875.9A EP3128548B1 (en) 2014-03-31 2015-03-16 Semiconductor apparatus, stacked semiconductor apparatus; encapsulated stacked-semiconductor, and method for manufacturing same
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