CN106409966B - 半导体受光元件 - Google Patents

半导体受光元件 Download PDF

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Publication number
CN106409966B
CN106409966B CN201610617954.6A CN201610617954A CN106409966B CN 106409966 B CN106409966 B CN 106409966B CN 201610617954 A CN201610617954 A CN 201610617954A CN 106409966 B CN106409966 B CN 106409966B
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China
Prior art keywords
layer
electric field
field relaxation
type
light
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CN201610617954.6A
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Chinese (zh)
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CN106409966A (zh
Inventor
山口晴央
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN106409966A publication Critical patent/CN106409966A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Light Receiving Elements (AREA)
CN201610617954.6A 2015-07-30 2016-07-29 半导体受光元件 Active CN106409966B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-150723 2015-07-30
JP2015150723A JP6507912B2 (ja) 2015-07-30 2015-07-30 半導体受光素子

Publications (2)

Publication Number Publication Date
CN106409966A CN106409966A (zh) 2017-02-15
CN106409966B true CN106409966B (zh) 2018-12-18

Family

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CN201610617954.6A Active CN106409966B (zh) 2015-07-30 2016-07-29 半导体受光元件

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US (1) US10079324B2 (https=)
JP (1) JP6507912B2 (https=)
CN (1) CN106409966B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102868049B1 (ko) * 2020-02-03 2025-10-01 삼성전자주식회사 적외선 검출 소자 및 이를 포함하는 적외선 검출 시스템
EP4250377A4 (en) * 2020-12-04 2024-11-27 Hamamatsu Photonics K.K. SEMICONDUCTOR LIGHT RECEIVING ELEMENT
WO2022157888A1 (ja) * 2021-01-21 2022-07-28 三菱電機株式会社 アバランシェフォトダイオード
WO2025134267A1 (ja) * 2023-12-20 2025-06-26 三菱電機株式会社 半導体受光素子、光回線終端装置、多値強度変調送受信装置、デジタルコヒーレント受信装置、光ファイバ無線システム、ｓｐａｄセンサーシステム、及びライダー装置

Citations (2)

* Cited by examiner, † Cited by third party
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CN102396059A (zh) * 2009-04-15 2012-03-28 住友化学株式会社 半导体基板的电气特性的测量方法
CN103390680A (zh) * 2012-05-10 2013-11-13 三菱电机株式会社 雪崩光电二极管及其制造方法

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JPH0730185A (ja) 1993-07-07 1995-01-31 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JPH0883904A (ja) 1994-09-14 1996-03-26 Toshiba Corp 電界効果トランジスタ
US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
JPH10247727A (ja) 1997-03-05 1998-09-14 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JP3705013B2 (ja) * 1999-05-24 2005-10-12 日本電気株式会社 半導体素子
JP3470065B2 (ja) 1999-07-01 2003-11-25 日本電信電話株式会社 半導体集積回路とその製造方法
JP3689621B2 (ja) * 2000-09-04 2005-08-31 シャープ株式会社 半導体発光素子
US6839491B2 (en) * 2000-12-21 2005-01-04 Xponent Photonics Inc Multi-layer dispersion-engineered waveguides and resonators
JP4072937B2 (ja) * 2001-05-11 2008-04-09 日本電信電話株式会社 半導体光素子
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CA2510606A1 (en) * 2002-12-16 2004-07-01 Japan Science And Technology Agency Semiconductor multi-layered structure with non-uniform quantum dots, and light-emitting diode, semiconductor laser diode and, semiconductor light amplifier using the same as well as method for making them
US20050189552A1 (en) * 2003-12-26 2005-09-01 Nobuyuki Ikoma Semiconductor light-emitting device
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JP4370203B2 (ja) 2004-05-25 2009-11-25 三菱電機株式会社 半導体素子
JP2006040919A (ja) * 2004-07-22 2006-02-09 Mitsubishi Electric Corp アバランシェフォトダイオード
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CN102396059A (zh) * 2009-04-15 2012-03-28 住友化学株式会社 半导体基板的电气特性的测量方法
CN103390680A (zh) * 2012-05-10 2013-11-13 三菱电机株式会社 雪崩光电二极管及其制造方法

Also Published As

Publication number Publication date
CN106409966A (zh) 2017-02-15
US10079324B2 (en) 2018-09-18
US20170033254A1 (en) 2017-02-02
JP6507912B2 (ja) 2019-05-08
JP2017034028A (ja) 2017-02-09

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