JP7059771B2 - 受光素子 - Google Patents
受光素子 Download PDFInfo
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- JP7059771B2 JP7059771B2 JP2018080427A JP2018080427A JP7059771B2 JP 7059771 B2 JP7059771 B2 JP 7059771B2 JP 2018080427 A JP2018080427 A JP 2018080427A JP 2018080427 A JP2018080427 A JP 2018080427A JP 7059771 B2 JP7059771 B2 JP 7059771B2
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- 239000004065 semiconductor Substances 0.000 claims description 141
- 230000031700 light absorption Effects 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 23
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 8
- 230000005684 electric field Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Description
はじめに、本発明の実施の形態1における受光素子について、図1,2を用いて説明する。この受光素子は、まず、基板101の上に形成されたp型の半導体からなる第1半導体層102と、基板101の上に形成されたn型の半導体からなる第2半導体層103とを備える。
次に、本発明の実施の形態2について、図1,図3を参照して説明する。実施の形態2における受光素子は、まず、基板101の上に形成された第1半導体層102と、基板101の上に形成された第2半導体層103と、第1半導体層102と第2半導体層103の間に形成されたキャリア走行層104と、第2半導体層103とキャリア走行層104との間に形成されたn型光吸収層105とを備える。これらの構成は、前述した実施の形態1と同様である。
次に、本発明の実施の形態3について、図1,図4を用いて説明する。実施の形態3における受光素子は、まず、基板101の上に形成された第1半導体層102と、基板101の上に形成された第2半導体層103と、第1半導体層102と第2半導体層103の間に形成されたキャリア走行層104と、第2半導体層103とキャリア走行層104との間に形成されたn型光吸収層105aとを備える。第1半導体層102,第2半導体層103,キャリア走行層104については、前述した実施の形態1と同様である。
次に、本発明の実施の形態4について、図5を参照して説明する。実施の形態4では、まず、前述した実施の形態1における受光素子のキャリア走行層104を、第1半導体層102の側に配置された第1キャリア走行層104aと、n型光吸収層105の側に配置された第2キャリア走行層104bとから構成する。加えて、実施の形態4では、第1キャリア走行層104aと第2キャリア走行層104bとの間に、p型の半導体からなる第3半導体層106を配置する。
次に、本発明の実施の形態5について、図6を参照して説明する。実施の形態5における受光素子は、まず、p型の半導体からなる第1半導体層102と、基板の上に形成されたn型の半導体からなる第2半導体層103とを備える。
Claims (5)
- 基板の上に形成されたp型の半導体からなる第1半導体層と、
前記基板の上に形成されたn型の半導体からなる第2半導体層と、
前記第1半導体層と前記第2半導体層の間に形成されたアンドープの半導体からなるキャリア走行層と、
前記第2半導体層と前記キャリア走行層との間に形成されたn型の半導体からなるn型光吸収層と
を備え、
前記n型光吸収層と前記第2半導体層とは、接して形成され、
前記n型光吸収層は、Ge、SiGe、InGaSb、InAsSb、GaAsSb、InGaAsSbのいずれかから構成され、
前記n型光吸収層は、他の層よりバンドギャップエネルギーが小さいことを特徴とする受光素子。 - 請求項1記載の受光素子において、
前記n型光吸収層の不純物濃度は、前記キャリア走行層に近いほど小さくされていることを特徴とする受光素子。 - 請求項1または2記載の受光素子において、
前記n型光吸収層は、SiとGeとからなる混晶の半導体から構成され、
SiとGeの組成比を前記キャリア走行層の側から前記第2半導体層の側にかけて変化させることで、組成比を変化させない場合に比較して、前記キャリア走行層の側の前記n型光吸収層の価電子帯端のエネルギー位置をより高エネルギーの側に位置する状態とする
ことを特徴とする受光素子。 - 請求項1~3のいずれか1項に記載の受光素子において、
前記キャリア走行層は、前記第1半導体層の側に配置された第1キャリア走行層と、前記n型光吸収層の側に配置された第2キャリア走行層とから構成され、
前記第1キャリア走行層と前記第2キャリア走行層との間に配置されたp型の半導体からなる第3半導体層を備える
ことを特徴とする受光素子。 - 請求項1~4のいずれか1項に記載の受光素子において、
前記キャリア走行層と前記第2半導体層との間に形成されたp型の半導体からなるp型光吸収層を備える
ことを特徴とする受光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018080427A JP7059771B2 (ja) | 2018-04-19 | 2018-04-19 | 受光素子 |
US17/047,963 US20210167239A1 (en) | 2018-04-19 | 2019-04-09 | Light-Receiving Element |
PCT/JP2019/015432 WO2019203059A1 (ja) | 2018-04-19 | 2019-04-09 | 受光素子 |
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JP2018080427A JP7059771B2 (ja) | 2018-04-19 | 2018-04-19 | 受光素子 |
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JP2019192685A JP2019192685A (ja) | 2019-10-31 |
JP7059771B2 true JP7059771B2 (ja) | 2022-04-26 |
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JP2018080427A Active JP7059771B2 (ja) | 2018-04-19 | 2018-04-19 | 受光素子 |
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US (1) | US20210167239A1 (ja) |
JP (1) | JP7059771B2 (ja) |
WO (1) | WO2019203059A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030111675A1 (en) | 2001-11-27 | 2003-06-19 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
WO2010013693A1 (ja) | 2008-07-28 | 2010-02-04 | 国立大学法人東京大学 | 光半導体素子、光電変換素子及び光変調素子 |
JP2011181581A (ja) | 2010-02-26 | 2011-09-15 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2012049235A (ja) | 2010-08-25 | 2012-03-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2014090138A (ja) | 2012-10-31 | 2014-05-15 | Ntt Electornics Corp | フォトダイオード |
WO2017059146A1 (en) | 2015-09-29 | 2017-04-06 | Quantum Semiconductor Llc | Electrical devices making use of counterdoped junctions |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2408915A1 (fr) * | 1977-11-10 | 1979-06-08 | Thomson Csf | Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation |
US6326650B1 (en) * | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
JP3687700B2 (ja) * | 1996-04-05 | 2005-08-24 | 日本電信電話株式会社 | フォトダイオード |
EP1583154B1 (en) * | 2003-01-06 | 2011-12-28 | Nippon Telegraph And Telephone Corporation | P-type nitride semiconductor structure and bipolar transistor |
US8269223B2 (en) * | 2010-05-27 | 2012-09-18 | The United States Of America As Represented By The Secretary Of The Army | Polarization enhanced avalanche photodetector and method thereof |
US9627422B2 (en) * | 2015-05-15 | 2017-04-18 | Bah Holdings Llc | Photodetector |
WO2016190346A1 (ja) * | 2015-05-28 | 2016-12-01 | 日本電信電話株式会社 | 受光素子および光集積回路 |
-
2018
- 2018-04-19 JP JP2018080427A patent/JP7059771B2/ja active Active
-
2019
- 2019-04-09 WO PCT/JP2019/015432 patent/WO2019203059A1/ja active Application Filing
- 2019-04-09 US US17/047,963 patent/US20210167239A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030111675A1 (en) | 2001-11-27 | 2003-06-19 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
WO2010013693A1 (ja) | 2008-07-28 | 2010-02-04 | 国立大学法人東京大学 | 光半導体素子、光電変換素子及び光変調素子 |
JP2011181581A (ja) | 2010-02-26 | 2011-09-15 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2012049235A (ja) | 2010-08-25 | 2012-03-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2014090138A (ja) | 2012-10-31 | 2014-05-15 | Ntt Electornics Corp | フォトダイオード |
WO2017059146A1 (en) | 2015-09-29 | 2017-04-06 | Quantum Semiconductor Llc | Electrical devices making use of counterdoped junctions |
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Publication number | Publication date |
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JP2019192685A (ja) | 2019-10-31 |
US20210167239A1 (en) | 2021-06-03 |
WO2019203059A1 (ja) | 2019-10-24 |
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