CN106370680B - 用于tem/stem层析成像倾斜系列采集和对准的基准形成 - Google Patents

用于tem/stem层析成像倾斜系列采集和对准的基准形成 Download PDF

Info

Publication number
CN106370680B
CN106370680B CN201610806416.1A CN201610806416A CN106370680B CN 106370680 B CN106370680 B CN 106370680B CN 201610806416 A CN201610806416 A CN 201610806416A CN 106370680 B CN106370680 B CN 106370680B
Authority
CN
China
Prior art keywords
sample
datum hole
hole
column
tomographic data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610806416.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN106370680A (zh
Inventor
C·布歇-马奎
张亮
L·普兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of CN106370680A publication Critical patent/CN106370680A/zh
Application granted granted Critical
Publication of CN106370680B publication Critical patent/CN106370680B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G01N23/046—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2611—Stereoscopic measurements and/or imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2826—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pulmonology (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201610806416.1A 2015-07-23 2016-07-22 用于tem/stem层析成像倾斜系列采集和对准的基准形成 Active CN106370680B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562196246P 2015-07-23 2015-07-23
US62/196246 2015-07-23

Publications (2)

Publication Number Publication Date
CN106370680A CN106370680A (zh) 2017-02-01
CN106370680B true CN106370680B (zh) 2019-04-23

Family

ID=57836148

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610806416.1A Active CN106370680B (zh) 2015-07-23 2016-07-22 用于tem/stem层析成像倾斜系列采集和对准的基准形成

Country Status (4)

Country Link
US (1) US9627176B2 (enExample)
EP (1) EP3121834A1 (enExample)
JP (1) JP6393448B2 (enExample)
CN (1) CN106370680B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017212020B3 (de) * 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
JP7154531B2 (ja) * 2018-03-22 2022-10-18 国立大学法人東北大学 電子デバイスの評価方法および評価装置
US10589360B2 (en) 2018-06-17 2020-03-17 Arevo, Inc. Systems of articles of manufacture with corresponding fiducial marks and dimensional variations
EP3657528A1 (en) * 2018-11-26 2020-05-27 FEI Company Method of imaging a sample using an electron microscope
US11264200B1 (en) * 2020-09-23 2022-03-01 Fei Company Lamella alignment based on a reconstructed volume
CN112903733B (zh) * 2021-01-25 2022-07-29 中国科学院广州地球化学研究所 一种透射电镜能谱超分辨分析方法
US12260583B2 (en) * 2021-02-09 2025-03-25 Fei Company 3D fiducial for precision 3D NAND channel tilt/shift analysis
US11476079B1 (en) * 2021-03-31 2022-10-18 Fei Company Method and system for imaging a multi-pillar sample
CN115078772B (zh) * 2022-05-30 2025-10-31 江苏第三代半导体研究院有限公司 一种apt样品制作方法及apt样品
EP4379348A1 (en) * 2022-11-30 2024-06-05 Fei Company Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope
CN117553723B (zh) * 2024-01-12 2024-04-23 中铁大桥局集团有限公司 一种基于三维扫描技术的预埋件装配板孔群的定位方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2056332A1 (en) * 2007-10-29 2009-05-06 Hitachi High-Technologies Corporation Displacement correction of a sample stage for an eucentric rotation in a charged particle microscope

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442924B2 (en) 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
US7312448B2 (en) 2005-04-06 2007-12-25 Carl Zeiss Nts Gmbh Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy
US7884326B2 (en) 2007-01-22 2011-02-08 Fei Company Manipulator for rotating and translating a sample holder
TWI372859B (en) * 2008-10-03 2012-09-21 Inotera Memories Inc Method for manufacturing an electron tomography specimen with fiducial markers and method for constructing 3d image
JP5321918B2 (ja) * 2010-06-15 2013-10-23 独立行政法人産業技術総合研究所 電子顕微鏡用試料作製方法
EP2402976A1 (en) 2010-06-30 2012-01-04 Fei Company Method of electron diffraction tomography
EP2708874A1 (en) 2012-09-12 2014-03-19 Fei Company Method of performing tomographic imaging of a sample in a charged-particle microscope
EP2738786A1 (en) 2012-11-29 2014-06-04 Fei Company Method of performing tomographic imaging of a sample in a charged-particle microscope
CN105264635B (zh) * 2012-12-31 2018-11-20 Fei 公司 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计
EP2811288B1 (en) 2013-06-06 2016-08-10 Fei Company Method for electron tomography
EP2916342A1 (en) 2014-03-05 2015-09-09 Fei Company Fabrication of a lamella for correlative atomic-resolution tomographic analyses

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2056332A1 (en) * 2007-10-29 2009-05-06 Hitachi High-Technologies Corporation Displacement correction of a sample stage for an eucentric rotation in a charged particle microscope

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
High-precision alignment of electron tomography tilt series using markers formed in helium-ion microscope;M.Hayashida et al.;《Micron》;20130731;第50卷;第29-34页
Strategies for fabricating atom probe specimens with a dual beam FIB;M.K.Miller et al.;《ultramicroscopy》;20050331;第102卷(第4期);第287-298页

Also Published As

Publication number Publication date
US20170025246A1 (en) 2017-01-26
CN106370680A (zh) 2017-02-01
US9627176B2 (en) 2017-04-18
JP2017026612A (ja) 2017-02-02
EP3121834A1 (en) 2017-01-25
JP6393448B2 (ja) 2018-09-19

Similar Documents

Publication Publication Date Title
CN106370680B (zh) 用于tem/stem层析成像倾斜系列采集和对准的基准形成
JP5296413B2 (ja) 複合荷電粒子ビーム装置を用いた断面画像取得方法および複合荷電粒子ビーム装置
US8476588B2 (en) Method of electron diffraction tomography
JP4474337B2 (ja) 試料作製・観察方法及び荷電粒子ビーム装置
JP5309552B2 (ja) 電子線トモグラフィ法及び電子線トモグラフィ装置
JP6822783B2 (ja) 有向ビーム信号分析を使用した粒子サイズの適応走査
CN114689630B (zh) 用于对三维特征进行成像的方法和系统
CN111223734B (zh) 使用电子显微镜对样品成像的方法
JP2016213189A5 (enExample)
US9514913B2 (en) TEM sample mounting geometry
JP3923468B2 (ja) 走査型計測装置の較正のための方法と装置
JP4433092B2 (ja) 三次元構造観察方法
EP4199034A1 (en) Microscopy feedback for improved milling accuracy
JP4265960B2 (ja) リアルタイム加工位置補正方法とその装置
TWI809491B (zh) 解析系統
JP6374035B2 (ja) イオンミリング装置を備えた電子顕微鏡、および三次元再構築方法
JP4988175B2 (ja) 荷電粒子装置用試料台
JP4393352B2 (ja) 電子顕微鏡
Ritter et al. SEM/FIB stage calibration with photogrammetric methods
JP5939627B2 (ja) 電子顕微鏡用試料、電子顕微鏡画像形成方法及び電子顕微鏡装置
JP2004301852A (ja) ３次元構造観察用試料作製装置、電子顕微鏡及びその方法
JP2004301851A (ja) ３次元構造観察用試料作製装置、電子顕微鏡及びその方法
JP2011233249A (ja) イオンビーム照射位置決め装置
JP2005276759A (ja) 電子顕微鏡の操作方法及びプログラム

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant