JP2016213189A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016213189A5 JP2016213189A5 JP2016091417A JP2016091417A JP2016213189A5 JP 2016213189 A5 JP2016213189 A5 JP 2016213189A5 JP 2016091417 A JP2016091417 A JP 2016091417A JP 2016091417 A JP2016091417 A JP 2016091417A JP 2016213189 A5 JP2016213189 A5 JP 2016213189A5
- Authority
- JP
- Japan
- Prior art keywords
- scan
- feature
- scanning
- localized
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 description 122
- 230000008569 process Effects 0.000 description 80
- 239000002245 particle Substances 0.000 description 54
- 239000000523 sample Substances 0.000 description 30
- 238000004458 analytical method Methods 0.000 description 28
- 238000003860 storage Methods 0.000 description 27
- 230000003044 adaptive effect Effects 0.000 description 25
- 239000013598 vector Substances 0.000 description 25
- 238000010894 electron beam technology Methods 0.000 description 13
- 230000033001 locomotion Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000004590 computer program Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000386 microscopy Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001888 ion beam-induced deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004621 scanning probe microscopy Methods 0.000 description 2
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001712 DNA sequencing Methods 0.000 description 1
- -1 Ga or He ions) Chemical class 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004624 confocal microscopy Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/702,753 | 2015-05-03 | ||
| US14/702,753 US9502211B1 (en) | 2015-05-03 | 2015-05-03 | Adaptive scanning for particle size using directed beam signal analysis |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016213189A JP2016213189A (ja) | 2016-12-15 |
| JP2016213189A5 true JP2016213189A5 (enExample) | 2019-04-25 |
| JP6822783B2 JP6822783B2 (ja) | 2021-01-27 |
Family
ID=57205188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016091417A Active JP6822783B2 (ja) | 2015-05-03 | 2016-04-28 | 有向ビーム信号分析を使用した粒子サイズの適応走査 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9502211B1 (enExample) |
| JP (1) | JP6822783B2 (enExample) |
| CN (1) | CN106098518B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102206999B1 (ko) * | 2016-01-29 | 2021-01-25 | 주식회사 히타치하이테크 | 하전 입자선 장치 |
| US9881765B2 (en) * | 2016-04-20 | 2018-01-30 | Applied Materials Israel Ltd. | Method and system for scanning an object |
| US9983152B1 (en) | 2016-11-17 | 2018-05-29 | Fei Company | Material characterization using ion channeling imaging |
| US10838191B2 (en) * | 2016-12-21 | 2020-11-17 | Carl Zeiss Microscopy Gmbh | Method of operating a microscope |
| EP3531439B1 (en) * | 2018-02-22 | 2020-06-24 | FEI Company | Intelligent pre-scan in scanning transmission charged particle microscopy |
| DE102019210452A1 (de) * | 2019-07-16 | 2021-01-21 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtung zum Erfassen von Volumeninformationen dreidimensionaler Proben |
| KR102845787B1 (ko) * | 2020-06-18 | 2025-08-13 | 주식회사 히타치하이테크 | 하전 입자선 장치 |
| DE102020122535B4 (de) * | 2020-08-28 | 2022-08-11 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Strahlgeräts, Computerprogrammprodukt und Strahlgerät zum Durchführen des Verfahrens |
| GB2598780B (en) * | 2020-09-14 | 2022-10-12 | Thermo Fisher Scient Ecublens Sarl | Systems and methods for performing laser-induced breakdown spectroscopy |
| CN116930232A (zh) * | 2022-03-31 | 2023-10-24 | Fei 公司 | 用于分析三维特征部的方法及系统 |
| TW202536913A (zh) * | 2023-11-06 | 2025-09-16 | 荷蘭商Asml荷蘭公司 | 設計感知動態像素大小以提高掃描電子顯微鏡檢測及度量衡產出量 |
| CN119603552B (zh) * | 2024-12-18 | 2025-09-16 | 中国科学院合肥物质科学研究院 | 面向计数框计数的浮游植物快速扫描显微高清成像方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6879719B1 (en) | 2000-02-24 | 2005-04-12 | International Business Machines Corporation | Method for measurement of full-two dimensional submicron shapes |
| JP3971937B2 (ja) * | 2002-02-18 | 2007-09-05 | 株式会社日立ハイテクノロジーズ | 露光条件監視方法およびその装置並びに半導体デバイスの製造方法 |
| JP2004207032A (ja) | 2002-12-25 | 2004-07-22 | Toshiba Corp | 荷電ビーム装置、荷電ビーム照射方法、および半導体装置の製造方法 |
| JP3749241B2 (ja) | 2003-10-08 | 2006-02-22 | 株式会社東芝 | 荷電ビーム照射方法、半導体装置の製造方法および荷電ビーム照射装置 |
| US7425703B2 (en) * | 2004-02-20 | 2008-09-16 | Ebara Corporation | Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method |
| KR100689673B1 (ko) * | 2004-05-10 | 2007-03-09 | 주식회사 하이닉스반도체 | 반도체소자의 불균일 이온주입 방법 |
| JP5156619B2 (ja) | 2006-02-17 | 2013-03-06 | 株式会社日立ハイテクノロジーズ | 試料寸法検査・測定方法、及び試料寸法検査・測定装置 |
| WO2009070119A1 (en) | 2007-11-30 | 2009-06-04 | Nanofactory Instruments Ab | Iterative feedback tuning in a scanning probe microscope |
| JP5474174B2 (ja) * | 2010-02-22 | 2014-04-16 | 株式会社日立ハイテクノロジーズ | 回路パターン検査装置 |
| EP2461347A1 (en) * | 2010-12-06 | 2012-06-06 | Fei Company | Detector system for transmission electron microscope |
| US8389962B2 (en) | 2011-05-31 | 2013-03-05 | Applied Materials Israel, Ltd. | System and method for compensating for magnetic noise |
| EP2557584A1 (en) | 2011-08-10 | 2013-02-13 | Fei Company | Charged-particle microscopy imaging method |
| JP5677236B2 (ja) * | 2011-08-22 | 2015-02-25 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US9041793B2 (en) | 2012-05-17 | 2015-05-26 | Fei Company | Scanning microscope having an adaptive scan |
| EP2924708A1 (en) | 2014-03-25 | 2015-09-30 | Fei Company | Imaging a sample with multiple beams and multiple detectors |
| EP2924710A1 (en) | 2014-03-25 | 2015-09-30 | Fei Company | Imaging a sample with multiple beams and a single detector |
-
2015
- 2015-05-03 US US14/702,753 patent/US9502211B1/en active Active
-
2016
- 2016-04-28 JP JP2016091417A patent/JP6822783B2/ja active Active
- 2016-05-03 CN CN201610294324.XA patent/CN106098518B/zh active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6822783B2 (ja) | 有向ビーム信号分析を使用した粒子サイズの適応走査 | |
| JP2016213189A5 (enExample) | ||
| EP2546638B1 (en) | Clustering of multi-modal data | |
| US9978557B2 (en) | System for orienting a sample using a diffraction pattern | |
| US8779357B1 (en) | Multiple image metrology | |
| US9696268B2 (en) | Automated decision-based energy-dispersive x-ray methodology and apparatus | |
| JP6932004B2 (ja) | 荷電粒子顕微鏡における3次元イメージング | |
| CN105529235A (zh) | 具有特殊孔隙板的带电粒子显微镜 | |
| CN114689630B (zh) | 用于对三维特征进行成像的方法和系统 | |
| JP7775333B2 (ja) | キャップバイアス電圧を使用した傾斜モードのsemによる後方散乱電子(bse)撮像 | |
| US10527563B2 (en) | Analysis with preliminary survey | |
| EP3091558B1 (en) | Adaptive scanning for particle size using directed beam signal analysis | |
| EP3945311B1 (en) | Sample analysis apparatus and method | |
| EP3098833A1 (en) | Adaptive scanning for particle size using directed beam signal analysis | |
| JP2022155554A (ja) | 三次元電子回折データを取得するための方法およびシステム | |
| JP6916748B2 (ja) | 電子顕微鏡 | |
| WO2024224559A1 (ja) | 荷電粒子線装置および三次元形状測定方法 | |
| JP2014022174A (ja) | 試料台およびそれを備えた電子顕微鏡 | |
| KR20240160645A (ko) | 하전 입자선 장치 및 하전 입자선 장치의 제어 방법 | |
| JP2004333210A (ja) | 電子線分析装置 |