CN106104778A - 用于聚合物表面与载体的受控粘结的制品和方法 - Google Patents

用于聚合物表面与载体的受控粘结的制品和方法 Download PDF

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Publication number
CN106104778A
CN106104778A CN201580016043.1A CN201580016043A CN106104778A CN 106104778 A CN106104778 A CN 106104778A CN 201580016043 A CN201580016043 A CN 201580016043A CN 106104778 A CN106104778 A CN 106104778A
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CN
China
Prior art keywords
carrier
bonding
glass
layer
thin slice
Prior art date
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Pending
Application number
CN201580016043.1A
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English (en)
Chinese (zh)
Inventor
R·A·贝尔曼
R·G·曼利
P·马宗达
K·L·西蒙敦
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Corning Inc
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Corning Inc
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Publication of CN106104778A publication Critical patent/CN106104778A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Laminated Bodies (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Surface Treatment Of Glass (AREA)
CN201580016043.1A 2014-01-27 2015-01-27 用于聚合物表面与载体的受控粘结的制品和方法 Pending CN106104778A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461931924P 2014-01-27 2014-01-27
US61/931,924 2014-01-27
PCT/US2015/013012 WO2015113020A1 (en) 2014-01-27 2015-01-27 Articles and methods for controlled bonding of polymer surfaces with carriers

Publications (1)

Publication Number Publication Date
CN106104778A true CN106104778A (zh) 2016-11-09

Family

ID=53682040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580016043.1A Pending CN106104778A (zh) 2014-01-27 2015-01-27 用于聚合物表面与载体的受控粘结的制品和方法

Country Status (6)

Country Link
JP (2) JP2017506204A (ja)
KR (1) KR20160114687A (ja)
CN (1) CN106104778A (ja)
SG (1) SG11201606059WA (ja)
TW (1) TWI654088B (ja)
WO (1) WO2015113020A1 (ja)

Cited By (3)

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CN106847862A (zh) * 2016-12-28 2017-06-13 深圳市华星光电技术有限公司 一种柔性显示器基板及其制备方法，柔性显示器制备方法
CN107098606A (zh) * 2017-04-24 2017-08-29 京东方科技集团股份有限公司 玻璃贴合方法、制造显示器件的方法和显示器件
CN110718453A (zh) * 2019-11-15 2020-01-21 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

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US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
JP6770432B2 (ja) 2014-01-27 2020-10-14 コーニング インコーポレイテッド 薄いシートの担体との制御された結合のための物品および方法
KR20160145062A (ko) 2014-04-09 2016-12-19 코닝 인코포레이티드 디바이스 변경된 기판 물품 및 제조 방법
JP2018524201A (ja) 2015-05-19 2018-08-30 コーニング インコーポレイテッド シートをキャリアと結合するための物品および方法
JP7106276B2 (ja) 2015-06-26 2022-07-26 コーニング インコーポレイテッド シート及び担体を有する物品及び方法
CN108353507B (zh) 2015-10-30 2020-11-27 康宁股份有限公司 用于加工与第二基材粘结的第一基材的方法
TW201737766A (zh) 2016-01-21 2017-10-16 康寧公司 處理基板的方法
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) * 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
KR20200081496A (ko) 2017-11-20 2020-07-07 코닝 인코포레이티드 양이온성 계면활성제 및/또는 유기염을 사용한 유리 쌍의 임시 접합
CN111615567B (zh) 2017-12-15 2023-04-14 康宁股份有限公司 用于处理基板的方法和用于制备包括粘合片材的制品的方法
CN112701058B (zh) * 2020-12-30 2022-09-02 长春长光圆辰微电子技术有限公司 晶圆键合力的测试方法

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US20120083098A1 (en) * 2010-09-30 2012-04-05 Infineon Technologies Ag Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core
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CN102625951A (zh) * 2009-08-27 2012-08-01 康宁股份有限公司 使用超声波使玻璃衬底从载体上脱离
US20120083098A1 (en) * 2010-09-30 2012-04-05 Infineon Technologies Ag Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core
CN104041199A (zh) * 2011-11-29 2014-09-10 亚利桑那州立大学董事会(代理及代表亚利桑那州立大学的法人团体) 用于提供电子器件结构的方法和相关电子器件结构
TW201341198A (zh) * 2012-02-01 2013-10-16 Toyo Boseki 積層體與其製造方法及使用其之裝置構造體之製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847862A (zh) * 2016-12-28 2017-06-13 深圳市华星光电技术有限公司 一种柔性显示器基板及其制备方法，柔性显示器制备方法
CN107098606A (zh) * 2017-04-24 2017-08-29 京东方科技集团股份有限公司 玻璃贴合方法、制造显示器件的方法和显示器件
CN110718453A (zh) * 2019-11-15 2020-01-21 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN110718453B (zh) * 2019-11-15 2021-08-20 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Also Published As

Publication number Publication date
WO2015113020A1 (en) 2015-07-30
TWI654088B (zh) 2019-03-21
SG11201606059WA (en) 2016-08-30
JP2017506204A (ja) 2017-03-02
TW201545887A (zh) 2015-12-16
JP2020037513A (ja) 2020-03-12
KR20160114687A (ko) 2016-10-05

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