CN1742366A - 用于加工晶圆的方法和设备及包括分离层和支持层的晶圆 - Google Patents
用于加工晶圆的方法和设备及包括分离层和支持层的晶圆 Download PDFInfo
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- CN1742366A CN1742366A CN 200380104408 CN200380104408A CN1742366A CN 1742366 A CN1742366 A CN 1742366A CN 200380104408 CN200380104408 CN 200380104408 CN 200380104408 A CN200380104408 A CN 200380104408A CN 1742366 A CN1742366 A CN 1742366A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/68395—Separation by peeling using peeling wheel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
气体1[sccm] | 气体2[sccm] | 气体3[sccm] | 输出[W] | 时间[sec] | 压力[mbar] | |
气体种类 | HMDSO | O2 | H2 | |||
Part 1 | 70 | 24 | 700 | 300 | 0.03 | |
Part 2 | 70 | 24 | 700 | 300 | 0.03 | |
Part 3 | 70 | 32 | 700 | 180 | 0.03 | |
Part 4 | 70 | 50 | 700 | 180 | 0.03 | |
Part 5 | 60 | 50 | 700 | 180 | 0.03 | |
Part 6 | 50 | 50 | 700 | 180 | 0.03 | |
Part 7 | 35 | 75 | 700 | 180 | 0.03 | |
Part 8 | 27 | 100 | 700 | 180 | 0.03 |
Part 9 | 27 | 100 | 1500 | 180 | 0.031 | |
Part 10 | 27 | 100 | 2500 | 60 | 0.031 | |
Part 11 | 200 | 200 | 2000 | 60 | 0.04 | |
Part 12 | 200 | 900 | 2000 | 300 | 0.05 | |
Part 13 | 10000 | 2500 | 300 | 0.22 |
气体1[sccm] | 气体2[sccm] | 气体3[sccm] | 输出[W] | 时间[sec] | 压力[mbar] | |
气体种类 | HMDSO | O2 | H2 | |||
Part 1 | 70 | 24 | 700 | 900 | 0.03 | |
Part 2 | 70 | 24 | 700 | 1800 | 0.03 | |
Part 3 | 200 | 900 | 1600 | 180 | 0.05 | |
Part 4 | 10000 | 2500 | 120 | 0.22 |
Claims (40)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2002156247 DE10256247A1 (de) | 2002-11-29 | 2002-11-29 | Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln |
DE10256247.4 | 2002-11-29 | ||
DE10353530.6 | 2003-11-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1742366A true CN1742366A (zh) | 2006-03-01 |
CN100365791C CN100365791C (zh) | 2008-01-30 |
Family
ID=32308921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801044083A Expired - Lifetime CN100365791C (zh) | 2002-11-29 | 2003-11-28 | 用于加工晶圆的方法和设备及包括分离层和支持层的晶圆 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN100365791C (zh) |
DE (1) | DE10256247A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102496596A (zh) * | 2011-12-27 | 2012-06-13 | 复旦大学 | 晶圆承载结构及其制备方法以及晶圆减薄方法 |
CN102543812A (zh) * | 2010-12-24 | 2012-07-04 | 日东电工株式会社 | 晶圆支架制作方法 |
CN102725838A (zh) * | 2010-02-05 | 2012-10-10 | Ev集团E·索尔纳有限责任公司 | 用于处理暂时接合的产品晶片的方法 |
CN103380482A (zh) * | 2011-02-10 | 2013-10-30 | 信越聚合物株式会社 | 单结晶基板制造方法及内部改质层形成单结晶部件 |
CN103779255A (zh) * | 2012-10-25 | 2014-05-07 | 罗门哈斯电子材料有限公司 | 暂时性粘合 |
CN106104778A (zh) * | 2014-01-27 | 2016-11-09 | 康宁股份有限公司 | 用于聚合物表面与载体的受控粘结的制品和方法 |
CN106132688A (zh) * | 2014-01-27 | 2016-11-16 | 康宁股份有限公司 | 用于薄片与载体的受控粘结的制品和方法 |
CN106133899A (zh) * | 2013-10-14 | 2016-11-16 | 康宁股份有限公司 | 用于半导体和插入物加工的载体粘结方法和制品 |
CN107068591A (zh) * | 2016-02-11 | 2017-08-18 | 米尔鲍尔有限两合公司 | 一种借助辐射源松开刚性基板上电子元件的工装和方法 |
CN110444480A (zh) * | 2019-07-24 | 2019-11-12 | 浙江荷清柔性电子技术有限公司 | 制作柔性芯片的方法、柔性芯片 |
CN110556345A (zh) * | 2018-05-31 | 2019-12-10 | 浙江清华柔性电子技术研究院 | 柔性器件的制作方法 |
CN111599738A (zh) * | 2019-02-20 | 2020-08-28 | 铠侠股份有限公司 | 载体及半导体装置的制造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4554901B2 (ja) * | 2003-08-12 | 2010-09-29 | 株式会社ディスコ | ウエーハの加工方法 |
DE102005056780B4 (de) * | 2005-11-28 | 2009-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Markierte plasmapolymere Schicht und Erzeugnis mit markiertem Schichtsystem, deren Verwendung und Verfahren zu deren Herstellung |
US10014177B2 (en) * | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0252739B1 (en) * | 1986-07-09 | 1993-10-06 | LINTEC Corporation | Adhesive sheets for sticking wafers thereto |
JPH05343376A (ja) * | 1992-06-05 | 1993-12-24 | Fujitsu Ltd | 半導体装置の製造方法 |
US5268065A (en) * | 1992-12-21 | 1993-12-07 | Motorola, Inc. | Method for thinning a semiconductor wafer |
JPH07106285A (ja) * | 1993-10-08 | 1995-04-21 | Oki Electric Ind Co Ltd | 半導体製造方法 |
JP3410371B2 (ja) * | 1998-08-18 | 2003-05-26 | リンテック株式会社 | ウエハ裏面研削時の表面保護シートおよびその利用方法 |
JP3784202B2 (ja) * | 1998-08-26 | 2006-06-07 | リンテック株式会社 | 両面粘着シートおよびその使用方法 |
JP4109823B2 (ja) * | 2000-10-10 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
-
2002
- 2002-11-29 DE DE2002156247 patent/DE10256247A1/de not_active Withdrawn
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2003
- 2003-11-28 CN CNB2003801044083A patent/CN100365791C/zh not_active Expired - Lifetime
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102725838A (zh) * | 2010-02-05 | 2012-10-10 | Ev集团E·索尔纳有限责任公司 | 用于处理暂时接合的产品晶片的方法 |
CN102725838B (zh) * | 2010-02-05 | 2016-03-02 | Ev集团E·索尔纳有限责任公司 | 用于处理暂时接合的产品晶片的方法 |
CN102543812A (zh) * | 2010-12-24 | 2012-07-04 | 日东电工株式会社 | 晶圆支架制作方法 |
CN102543812B (zh) * | 2010-12-24 | 2016-09-21 | 日东电工株式会社 | 晶圆支架制作方法 |
CN103380482A (zh) * | 2011-02-10 | 2013-10-30 | 信越聚合物株式会社 | 单结晶基板制造方法及内部改质层形成单结晶部件 |
CN103380482B (zh) * | 2011-02-10 | 2016-05-25 | 信越聚合物株式会社 | 单结晶基板制造方法及内部改质层形成单结晶部件 |
CN102496596A (zh) * | 2011-12-27 | 2012-06-13 | 复旦大学 | 晶圆承载结构及其制备方法以及晶圆减薄方法 |
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CN103779255B (zh) * | 2012-10-25 | 2016-06-29 | 罗门哈斯电子材料有限公司 | 暂时性粘合 |
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CN107068591A (zh) * | 2016-02-11 | 2017-08-18 | 米尔鲍尔有限两合公司 | 一种借助辐射源松开刚性基板上电子元件的工装和方法 |
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CN111599738A (zh) * | 2019-02-20 | 2020-08-28 | 铠侠股份有限公司 | 载体及半导体装置的制造方法 |
CN110444480A (zh) * | 2019-07-24 | 2019-11-12 | 浙江荷清柔性电子技术有限公司 | 制作柔性芯片的方法、柔性芯片 |
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