SG11201606059WA - Articles and methods for controlled bonding of polymer surfaces with carriers - Google Patents
Articles and methods for controlled bonding of polymer surfaces with carriersInfo
- Publication number
- SG11201606059WA SG11201606059WA SG11201606059WA SG11201606059WA SG11201606059WA SG 11201606059W A SG11201606059W A SG 11201606059WA SG 11201606059W A SG11201606059W A SG 11201606059WA SG 11201606059W A SG11201606059W A SG 11201606059WA SG 11201606059W A SG11201606059W A SG 11201606059WA
- Authority
- SG
- Singapore
- Prior art keywords
- carriers
- articles
- methods
- polymer surfaces
- controlled bonding
- Prior art date
Links
- 239000000969 carrier Substances 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Laminated Bodies (AREA)
- Joining Of Glass To Other Materials (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461931924P | 2014-01-27 | 2014-01-27 | |
PCT/US2015/013012 WO2015113020A1 (en) | 2014-01-27 | 2015-01-27 | Articles and methods for controlled bonding of polymer surfaces with carriers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606059WA true SG11201606059WA (en) | 2016-08-30 |
Family
ID=53682040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606059WA SG11201606059WA (en) | 2014-01-27 | 2015-01-27 | Articles and methods for controlled bonding of polymer surfaces with carriers |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP2017506204A (ja) |
KR (1) | KR20160114687A (ja) |
CN (1) | CN106104778A (ja) |
SG (1) | SG11201606059WA (ja) |
TW (1) | TWI654088B (ja) |
WO (1) | WO2015113020A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
TWI617437B (zh) | 2012-12-13 | 2018-03-11 | 康寧公司 | 促進控制薄片與載體間接合之處理 |
US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
CN106132688B (zh) | 2014-01-27 | 2020-07-14 | 康宁股份有限公司 | 用于薄片与载体的受控粘结的制品和方法 |
CN106457758B (zh) | 2014-04-09 | 2018-11-16 | 康宁股份有限公司 | 装置改性的基材制品及其制备方法 |
US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
WO2016209897A1 (en) | 2015-06-26 | 2016-12-29 | Corning Incorporated | Methods and articles including a sheet and a carrier |
CN108353507B (zh) | 2015-10-30 | 2020-11-27 | 康宁股份有限公司 | 用于加工与第二基材粘结的第一基材的方法 |
TW201737766A (zh) | 2016-01-21 | 2017-10-16 | 康寧公司 | 處理基板的方法 |
TW202216444A (zh) | 2016-08-30 | 2022-05-01 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
TWI810161B (zh) * | 2016-08-31 | 2023-08-01 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
CN106847862A (zh) * | 2016-12-28 | 2017-06-13 | 深圳市华星光电技术有限公司 | 一种柔性显示器基板及其制备方法,柔性显示器制备方法 |
CN107098606B (zh) * | 2017-04-24 | 2020-07-07 | 京东方科技集团股份有限公司 | 玻璃贴合方法、制造显示器件的方法和显示器件 |
KR102659516B1 (ko) | 2017-08-18 | 2024-04-23 | 코닝 인코포레이티드 | 유리 적층체 |
CN111372903A (zh) | 2017-11-20 | 2020-07-03 | 康宁股份有限公司 | 使用阳离子表面活性剂和/或有机盐的玻璃对的临时结合 |
CN111615567B (zh) * | 2017-12-15 | 2023-04-14 | 康宁股份有限公司 | 用于处理基板的方法和用于制备包括粘合片材的制品的方法 |
CN110718453B (zh) * | 2019-11-15 | 2021-08-20 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
CN112701058B (zh) * | 2020-12-30 | 2022-09-02 | 长春长光圆辰微电子技术有限公司 | 晶圆键合力的测试方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2542750B2 (ja) * | 1985-12-09 | 1996-10-09 | 益弘 小駒 | プラスチックの表面エネルギ―制御方法 |
US4810326A (en) * | 1987-08-31 | 1989-03-07 | International Business Machines Corporation | Interlaminate adhesion between polymeric materials and electrolytic copper surfaces |
AU5914994A (en) * | 1993-04-21 | 1994-10-27 | Bend Research, Inc. | Plasma polymerization and surface modification inside hollow micro-substrates |
JP4497154B2 (ja) * | 1997-12-15 | 2010-07-07 | セイコーエプソン株式会社 | 固体接合方法 |
JP2001048591A (ja) * | 1999-08-03 | 2001-02-20 | Kyodo Kumiai Ibaraki Kinosei Glass Kenkyukai | 表面撥水性ガラス及びその製造方法 |
DE10256247A1 (de) * | 2002-11-29 | 2004-06-09 | Andreas Jakob | Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln |
JP4030897B2 (ja) * | 2003-03-07 | 2008-01-09 | 株式会社クラレ | プラスチックの接着方法 |
US6969166B2 (en) * | 2003-05-29 | 2005-11-29 | 3M Innovative Properties Company | Method for modifying the surface of a substrate |
WO2008156055A1 (ja) * | 2007-06-18 | 2008-12-24 | Seiko Epson Corporation | 接合方法、接合体、液滴吐出ヘッドおよび液滴吐出装置 |
JP4710897B2 (ja) * | 2007-11-28 | 2011-06-29 | セイコーエプソン株式会社 | 接合体の剥離方法 |
WO2011024690A1 (ja) * | 2009-08-27 | 2011-03-03 | 旭硝子株式会社 | フレキシブル基材-支持体の積層構造体、支持体付き電子デバイス用パネル、および電子デバイス用パネルの製造方法 |
US9847243B2 (en) * | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
JP5602529B2 (ja) * | 2010-07-29 | 2014-10-08 | 日本合成化学工業株式会社 | 積層体の製法、ガラス基板付き偏光板の製法、およびそれにより得られたガラス基板付き偏光板 |
US8846499B2 (en) * | 2010-08-17 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite carrier structure |
US8822306B2 (en) * | 2010-09-30 | 2014-09-02 | Infineon Technologies Ag | Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core |
KR101918284B1 (ko) * | 2011-03-03 | 2019-01-30 | 엘지디스플레이 주식회사 | 플렉시블 표시장치의 제조 방법 |
CN104041199A (zh) * | 2011-11-29 | 2014-09-10 | 亚利桑那州立大学董事会(代理及代表亚利桑那州立大学的法人团体) | 用于提供电子器件结构的方法和相关电子器件结构 |
WO2013114685A1 (ja) * | 2012-02-01 | 2013-08-08 | 東洋紡株式会社 | 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法 |
JP2015515431A (ja) * | 2012-02-08 | 2015-05-28 | コーニング インコーポレイテッド | 担体付のフレキシブルガラスの処理 |
KR20130095605A (ko) * | 2012-06-22 | 2013-08-28 | 코스텍시스템(주) | 디바이스 웨이퍼와 캐리어 웨이퍼의 본딩과 디본딩 장치 |
US10510576B2 (en) * | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
-
2015
- 2015-01-27 CN CN201580016043.1A patent/CN106104778A/zh active Pending
- 2015-01-27 TW TW104102736A patent/TWI654088B/zh not_active IP Right Cessation
- 2015-01-27 JP JP2016547182A patent/JP2017506204A/ja active Pending
- 2015-01-27 KR KR1020167023790A patent/KR20160114687A/ko not_active Application Discontinuation
- 2015-01-27 SG SG11201606059WA patent/SG11201606059WA/en unknown
- 2015-01-27 WO PCT/US2015/013012 patent/WO2015113020A1/en active Application Filing
-
2019
- 2019-12-02 JP JP2019218246A patent/JP2020037513A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2015113020A1 (en) | 2015-07-30 |
TWI654088B (zh) | 2019-03-21 |
CN106104778A (zh) | 2016-11-09 |
JP2017506204A (ja) | 2017-03-02 |
KR20160114687A (ko) | 2016-10-05 |
TW201545887A (zh) | 2015-12-16 |
JP2020037513A (ja) | 2020-03-12 |
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