CN106068549B - 基于钴的互连及其制造方法 - Google Patents

基于钴的互连及其制造方法 Download PDF

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CN106068549B
CN106068549B CN201580002697.9A CN201580002697A CN106068549B CN 106068549 B CN106068549 B CN 106068549B CN 201580002697 A CN201580002697 A CN 201580002697A CN 106068549 B CN106068549 B CN 106068549B
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layer
cobalt
adhesion layer
fill material
fill
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CN106068549A (zh
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C·J·杰泽斯基
T·K·因杜库里
R·V·谢比亚姆
C·T·卡弗
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Intel Corp
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Intel Corp
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    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201580002697.9A 2013-12-20 2015-02-21 基于钴的互连及其制造方法 Active CN106068549B (zh)

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CN202210020138.2A CN114361132B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/137,526 US9997457B2 (en) 2013-12-20 2013-12-20 Cobalt based interconnects and methods of fabrication thereof
PCT/IB2015/000198 WO2015092780A1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

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US (5) US9997457B2 (enExample)
EP (2) EP3907755B1 (enExample)
JP (1) JP6652245B2 (enExample)
KR (3) KR20170110000A (enExample)
CN (2) CN106068549B (enExample)
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