CN106068549B - 基于钴的互连及其制造方法 - Google Patents

基于钴的互连及其制造方法 Download PDF

Info

Publication number
CN106068549B
CN106068549B CN201580002697.9A CN201580002697A CN106068549B CN 106068549 B CN106068549 B CN 106068549B CN 201580002697 A CN201580002697 A CN 201580002697A CN 106068549 B CN106068549 B CN 106068549B
Authority
CN
China
Prior art keywords
layer
cobalt
adhesion layer
fill material
fill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580002697.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN106068549A (zh
Inventor
C·J·杰泽斯基
T·K·因杜库里
R·V·谢比亚姆
C·T·卡弗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to CN202210020138.2A priority Critical patent/CN114361132B/zh
Publication of CN106068549A publication Critical patent/CN106068549A/zh
Application granted granted Critical
Publication of CN106068549B publication Critical patent/CN106068549B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846Layer combinations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76847Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882Reflowing or applying of pressure to better fill the contact hole
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883Post-treatment or after-treatment of the conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226Via connections in a multilevel interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H01L23/53261Refractory-metal alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H01L23/53266Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • H01L23/53295Stacked insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/791Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855After-treatment introducing at least one additional element into the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864Thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233Copper alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201580002697.9A 2013-12-20 2015-02-21 基于钴的互连及其制造方法 Active CN106068549B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210020138.2A CN114361132B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/137,526 US9997457B2 (en) 2013-12-20 2013-12-20 Cobalt based interconnects and methods of fabrication thereof
PCT/IB2015/000198 WO2015092780A1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210020138.2A Division CN114361132B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法

Publications (2)

Publication Number Publication Date
CN106068549A CN106068549A (zh) 2016-11-02
CN106068549B true CN106068549B (zh) 2022-02-11

Family

ID=53400881

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580002697.9A Active CN106068549B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法
CN202210020138.2A Active CN114361132B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202210020138.2A Active CN114361132B (zh) 2013-12-20 2015-02-21 基于钴的互连及其制造方法

Country Status (7)

Country Link
US (5) US9997457B2 (enExample)
EP (2) EP3084810B1 (enExample)
JP (1) JP6652245B2 (enExample)
KR (3) KR102710883B1 (enExample)
CN (2) CN106068549B (enExample)
TW (1) TWI610398B (enExample)
WO (1) WO2015092780A1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9997457B2 (en) * 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US9847289B2 (en) * 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
EP3155650A4 (en) * 2014-06-16 2018-03-14 Intel Corporation Seam healing of metal interconnects
US9601430B2 (en) 2014-10-02 2017-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US20160276156A1 (en) * 2015-03-16 2016-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing process thereof
US10692847B2 (en) * 2015-08-31 2020-06-23 Intel Corporation Inorganic interposer for multi-chip packaging
US9722038B2 (en) * 2015-09-11 2017-08-01 International Business Machines Corporation Metal cap protection layer for gate and contact metallization
US9484255B1 (en) * 2015-11-03 2016-11-01 International Business Machines Corporation Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
US9741577B2 (en) 2015-12-02 2017-08-22 International Business Machines Corporation Metal reflow for middle of line contacts
TWI637899B (zh) * 2015-12-15 2018-10-11 村田製作所股份有限公司 微機電裝置和製造其之方法
US10446496B2 (en) 2016-02-17 2019-10-15 International Business Machines Corporation Self-forming barrier for cobalt interconnects
US9837350B2 (en) * 2016-04-12 2017-12-05 International Business Machines Corporation Semiconductor interconnect structure with double conductors
US10438849B2 (en) * 2016-04-25 2019-10-08 Applied Materials, Inc. Microwave anneal to improve CVD metal gap-fill and throughput
US10438847B2 (en) * 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
US9799555B1 (en) * 2016-06-07 2017-10-24 Globalfoundries Inc. Cobalt interconnects covered by a metal cap
US10049927B2 (en) * 2016-06-10 2018-08-14 Applied Materials, Inc. Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
US10079208B2 (en) * 2016-07-28 2018-09-18 Globalfoundries Inc. IC structure with interface liner and methods of forming same
US9953864B2 (en) 2016-08-30 2018-04-24 International Business Machines Corporation Interconnect structure
US10049974B2 (en) * 2016-08-30 2018-08-14 International Business Machines Corporation Metal silicate spacers for fully aligned vias
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US9899317B1 (en) 2016-09-29 2018-02-20 International Business Machines Corporation Nitridization for semiconductor structures
US9741609B1 (en) 2016-11-01 2017-08-22 International Business Machines Corporation Middle of line cobalt interconnection
KR102777131B1 (ko) * 2016-12-14 2025-03-05 삼성전자주식회사 반도체 장치
US10128151B2 (en) * 2016-12-16 2018-11-13 Globalfoundries Inc. Devices and methods of cobalt fill metallization
WO2018125175A1 (en) * 2016-12-30 2018-07-05 Intel Corporation Self-aligned hard masks with converted liners
US10177030B2 (en) * 2017-01-11 2019-01-08 International Business Machines Corporation Cobalt contact and interconnect structures
US9805972B1 (en) * 2017-02-20 2017-10-31 Globalfoundries Inc. Skip via structures
KR102292645B1 (ko) * 2017-03-09 2021-08-24 삼성전자주식회사 집적회로 소자
US10109490B1 (en) * 2017-06-20 2018-10-23 Globalfoundries Inc. Cobalt interconnects formed by selective bottom-up fill
US10553481B2 (en) 2017-08-31 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Vias for cobalt-based interconnects and methods of fabrication thereof
US12087692B2 (en) * 2017-09-28 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Hardened interlayer dielectric layer
US11348828B2 (en) * 2017-11-23 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming the same
US10541199B2 (en) 2017-11-29 2020-01-21 International Business Machines Corporation BEOL integration with advanced interconnects
US10847413B2 (en) 2017-11-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contact plugs for semiconductor device
US11411095B2 (en) * 2017-11-30 2022-08-09 Intel Corporation Epitaxial source or drain structures for advanced integrated circuit structure fabrication
TWI817576B (zh) * 2017-11-30 2023-10-01 美商英特爾股份有限公司 用於先進積體電路結構製造之異質金屬線組成
DE102018124674A1 (de) 2017-11-30 2019-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Kontaktstifte für Halbleiter-Bauelement und Verfahren zu deren Herstellung
US10340183B1 (en) 2018-01-02 2019-07-02 Globalfoundries Inc. Cobalt plated via integration scheme
US20190363048A1 (en) * 2018-05-22 2019-11-28 Lam Research Corporation Via prefill in a fully aligned via
US11501999B2 (en) * 2018-09-28 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Cobalt fill for gate structures
US10971398B2 (en) * 2018-10-26 2021-04-06 International Business Machines Corporation Cobalt interconnect structure including noble metal layer
CN111261574A (zh) * 2018-12-03 2020-06-09 长鑫存储技术有限公司 一种半导体结构及其制作方法
FR3092589A1 (fr) 2019-02-08 2020-08-14 Aveni Electrodéposition d’un alliage de cobalt et utilisation en microélectronique
WO2020161256A1 (en) 2019-02-08 2020-08-13 Aveni Electrodeposition of a cobalt or copper alloy, and use in microelectronics
US10818589B2 (en) 2019-03-13 2020-10-27 International Business Machines Corporation Metal interconnect structures with self-forming sidewall barrier layer
US10803548B2 (en) * 2019-03-15 2020-10-13 Intel Corporation Disaggregation of SOC architecture
US11292938B2 (en) 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
US11189589B2 (en) * 2019-09-25 2021-11-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure with raised implanted region and manufacturing method thereof
US11152257B2 (en) * 2020-01-16 2021-10-19 International Business Machines Corporation Barrier-less prefilled via formation
CN116569319A (zh) 2020-12-10 2023-08-08 加利福尼亚大学董事会 Cmos兼容性石墨烯结构、互连体和制造方法
US11581258B2 (en) * 2021-01-13 2023-02-14 Nanya Technology Corporation Semiconductor device structure with manganese-containing interconnect structure and method for forming the same
EP4288999A4 (en) 2021-02-08 2025-01-15 MacDermid Enthone Inc. Method and wet chemical compositions for diffusion barrier formation
US12183631B2 (en) * 2021-07-02 2024-12-31 Applied Materials, Inc. Methods for copper doped hybrid metallization for line and via
US12315735B2 (en) 2021-07-31 2025-05-27 Applied Materials, Inc. Methods for removing etch stop layers
US20240047350A1 (en) * 2022-08-03 2024-02-08 Nanya Technology Corporation Metal structure having funnel-shaped interconnect and method of manufacturing the same
US12310084B2 (en) * 2022-08-22 2025-05-20 Nanya Technology Corporation Semiconductor device with assistant cap and method for fabricating the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971901A (zh) * 2005-11-21 2007-05-30 索尼株式会社 半导体器件及其制造方法
CN104051336A (zh) * 2013-03-15 2014-09-17 应用材料公司 用于在半导体装置中产生互连的方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020019127A1 (en) * 1997-02-14 2002-02-14 Micron Technology, Inc. Interconnect structure and method of making
KR101170560B1 (ko) * 2003-05-09 2012-08-01 바스프 에스이 반도체 산업에서 사용하기 위한 3성분 물질의 무전해석출용 조성물
US7304388B2 (en) 2003-06-26 2007-12-04 Intel Corporation Method and apparatus for an improved air gap interconnect structure
US7972970B2 (en) * 2003-10-20 2011-07-05 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US6967131B2 (en) * 2003-10-29 2005-11-22 International Business Machines Corp. Field effect transistor with electroplated metal gate
JP5096669B2 (ja) * 2005-07-06 2012-12-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4197694B2 (ja) 2005-08-10 2008-12-17 株式会社東芝 半導体装置およびその製造方法
KR100714476B1 (ko) * 2005-11-25 2007-05-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5076482B2 (ja) * 2006-01-20 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4740071B2 (ja) 2006-08-31 2011-08-03 株式会社東芝 半導体装置
US7964496B2 (en) * 2006-11-21 2011-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Schemes for forming barrier layers for copper in interconnect structures
KR101629965B1 (ko) * 2007-04-09 2016-06-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
JP2009147137A (ja) * 2007-12-14 2009-07-02 Toshiba Corp 半導体装置およびその製造方法
JP5358950B2 (ja) * 2008-01-07 2013-12-04 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
US7843063B2 (en) * 2008-02-14 2010-11-30 International Business Machines Corporation Microstructure modification in copper interconnect structure
US8013445B2 (en) * 2008-02-29 2011-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Low resistance high reliability contact via and metal line structure for semiconductor device
US7867891B2 (en) 2008-12-10 2011-01-11 Intel Corporation Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance
JP4415100B1 (ja) 2008-12-19 2010-02-17 国立大学法人東北大学 銅配線、半導体装置および銅配線形成方法
JP5326558B2 (ja) * 2008-12-26 2013-10-30 富士通セミコンダクター株式会社 半導体装置の製造方法
US8531033B2 (en) * 2009-09-07 2013-09-10 Advanced Interconnect Materials, Llc Contact plug structure, semiconductor device, and method for forming contact plug
US7956463B2 (en) * 2009-09-16 2011-06-07 International Business Machines Corporation Large grain size conductive structure for narrow interconnect openings
US8653663B2 (en) 2009-10-29 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer for copper interconnect
US8772942B2 (en) 2010-01-26 2014-07-08 International Business Machines Corporation Interconnect structure employing a Mn-group VIIIB alloy liner
US20110266676A1 (en) 2010-05-03 2011-11-03 Toshiba America Electronic Components, Inc. Method for forming interconnection line and semiconductor structure
US20120141667A1 (en) 2010-07-16 2012-06-07 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures
US8508018B2 (en) * 2010-09-24 2013-08-13 Intel Corporation Barrier layers
JP5734757B2 (ja) 2011-06-16 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US8546885B2 (en) * 2011-07-25 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate electrode of a field effect transistor
KR20130060432A (ko) * 2011-11-30 2013-06-10 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP6360276B2 (ja) 2012-03-08 2018-07-18 東京エレクトロン株式会社 半導体装置、半導体装置の製造方法、半導体製造装置
US9330939B2 (en) * 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
JP2014062312A (ja) * 2012-09-24 2014-04-10 Tokyo Electron Ltd マンガンシリケート膜の形成方法、処理システム、半導体デバイスの製造方法および半導体デバイス
JP2014141739A (ja) 2012-12-27 2014-08-07 Tokyo Electron Ltd 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
US9514983B2 (en) * 2012-12-28 2016-12-06 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US20140273436A1 (en) * 2013-03-15 2014-09-18 Globalfoundries Inc. Methods of forming barrier layers for conductive copper structures
US9362228B2 (en) * 2013-10-22 2016-06-07 Globalfoundries Inc. Electro-migration enhancing method for self-forming barrier process in copper metalization
US9997457B2 (en) * 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971901A (zh) * 2005-11-21 2007-05-30 索尼株式会社 半导体器件及其制造方法
CN104051336A (zh) * 2013-03-15 2014-09-17 应用材料公司 用于在半导体装置中产生互连的方法

Also Published As

Publication number Publication date
US20200286836A1 (en) 2020-09-10
EP3084810A1 (en) 2016-10-26
CN106068549A (zh) 2016-11-02
EP3907755A3 (en) 2022-01-19
US12354956B2 (en) 2025-07-08
JP2016541113A (ja) 2016-12-28
KR102526836B1 (ko) 2023-04-27
EP3084810A4 (en) 2017-09-06
US20180211918A1 (en) 2018-07-26
US20150179579A1 (en) 2015-06-25
KR20210152021A (ko) 2021-12-14
KR20230054492A (ko) 2023-04-24
WO2015092780A1 (en) 2015-06-25
KR20170110000A (ko) 2017-10-10
CN114361132A (zh) 2022-04-15
EP3907755A2 (en) 2021-11-10
CN114361132B (zh) 2025-08-29
US11862563B2 (en) 2024-01-02
TW201533845A (zh) 2015-09-01
EP3907755B1 (en) 2025-02-12
US20220238451A1 (en) 2022-07-28
JP6652245B2 (ja) 2020-02-19
US20240145391A1 (en) 2024-05-02
US11328993B2 (en) 2022-05-10
EP3084810B1 (en) 2021-04-28
US9997457B2 (en) 2018-06-12
TWI610398B (zh) 2018-01-01
KR102710883B1 (ko) 2024-09-26
US10700007B2 (en) 2020-06-30

Similar Documents

Publication Publication Date Title
US11862563B2 (en) Cobalt based interconnects and methods of fabrication thereof
CN107452711B (zh) 基于钴的互连及其制造方法
CN103299427B (zh) 半导体器件及制造接触部的方法
US8486832B2 (en) Method for fabricating semiconductor device
TWI545712B (zh) 內連線結構及其製造方法
US20170117371A1 (en) Low resistance contact structures for trench structures
CN100573909C (zh) 半导体装置及其制造方法
KR20210016280A (ko) 다층 전도성 특징부를 갖는 반도체 디바이스 구조물 및 이의 제조 방법
US20230230919A1 (en) Metal spacers with hard masks formed using a subtractive process
US9865543B1 (en) Structure and method for inhibiting cobalt diffusion
US7344974B2 (en) Metallization method of semiconductor device
JPWO2002037558A1 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant