KR20170110000A - 코발트계 인터커넥트 및 그의 제조 방법 - Google Patents

코발트계 인터커넥트 및 그의 제조 방법 Download PDF

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Publication number
KR20170110000A
KR20170110000A KR1020167013373A KR20167013373A KR20170110000A KR 20170110000 A KR20170110000 A KR 20170110000A KR 1020167013373 A KR1020167013373 A KR 1020167013373A KR 20167013373 A KR20167013373 A KR 20167013373A KR 20170110000 A KR20170110000 A KR 20170110000A
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adhesive layer
layer
cobalt
manganese
interconnect structure
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KR1020167013373A
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Korean (ko)
Inventor
크리스토퍼 제이. 예제프스키
테자스위 케이. 인두쿠리
라마난 브이. 셰비암
콜린 티. 카베르
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인텔 코포레이션
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Priority to KR1020217040015A priority Critical patent/KR102526836B1/ko
Publication of KR20170110000A publication Critical patent/KR20170110000A/ko
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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    • H01L21/76841—Barrier, adhesion or liner layers
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020167013373A 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법 Ceased KR20170110000A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217040015A KR102526836B1 (ko) 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/137,526 US9997457B2 (en) 2013-12-20 2013-12-20 Cobalt based interconnects and methods of fabrication thereof
PCT/IB2015/000198 WO2015092780A1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

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KR1020217040015A Division KR102526836B1 (ko) 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법

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KR20170110000A true KR20170110000A (ko) 2017-10-10

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KR1020217040015A Active KR102526836B1 (ko) 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법
KR1020237012227A Active KR102710883B1 (ko) 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법

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KR1020237012227A Active KR102710883B1 (ko) 2013-12-20 2015-02-21 코발트계 인터커넥트 및 그의 제조 방법

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