CN105974699A - 阵列基板及其制造方法、液晶显示面板 - Google Patents

阵列基板及其制造方法、液晶显示面板 Download PDF

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Publication number
CN105974699A
CN105974699A CN201610493244.7A CN201610493244A CN105974699A CN 105974699 A CN105974699 A CN 105974699A CN 201610493244 A CN201610493244 A CN 201610493244A CN 105974699 A CN105974699 A CN 105974699A
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Prior art keywords
layer
insulating barrier
line layer
base palte
array base
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CN201610493244.7A
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CN105974699B (zh
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林碧芬
甘启明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610493244.7A priority Critical patent/CN105974699B/zh
Priority to US15/125,193 priority patent/US10139690B2/en
Priority to PCT/CN2016/090609 priority patent/WO2018000481A1/zh
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Abstract

本发明提供一种阵列基板，包括：依次层叠设置的基板、公共电极层、隔离层、栅极层、第一绝缘层、数据线层、第二绝缘层、第一透明电极、第三绝缘层和第二透明电极，所述隔离层上设有第一过孔，所述第一绝缘层上设有第二过孔，所述第二绝缘层设有第三过孔和与所述第二过孔连通的第四过孔，所述第一透明电极经所述第一过孔、所述第二过孔和所述第四过孔连接至所述公共电极层，所述第三绝缘层设有与所述第三过孔连通的第五过孔，所述第二透明电极经所述第五过孔和所述第三过孔与所述数据线层连接。本发明中将栅极线层和公共电极层设置在不同的导电层中，避免了由于两者距离过近造成的短路形成线类不良异常，提升了液晶显示面板的稳定性。

Description

阵列基板及其制造方法、液晶显示面板
技术领域
本发明涉及显示技术领域，具体而言涉及一种阵列基板及其制造方法、液晶显示面板。
背景技术
LTPS-LCD(Low Temperature Poly-Silicon Liquid Crystal Display，低温多晶硅液晶显示面板)具有高分辨率、反应速度快、高亮度、高开口率等优点，因此在当前的平板显示器市场占据了主导地位。
液晶显示面板通常包括阵列基板和彩膜基板，阵列基板和彩膜基板对盒形成液晶面板(Panel)。其中，一般情况下，阵列基板上设置有栅极线层(Gate line)即扫描线、数据线层(Data line)以及公共电极层(Common line)。栅极线层和公共电极层采用同一层金属层铺设，通过刻蚀等加工工艺形成栅极线层和公共电极层，但是由于两者距离较近，极易造成短路形成线类不良异常。
发明内容
本发明的目的在于提供阵列基板及其制造方法，能够有效改善栅极线层和公共电极层的断路异常，提升液晶显示面板的稳定性。
本发明的另一目的在于提供采用上述阵列基板的液晶显示面板。
为了实现上述目的，本发明实施方式提供如下技术方案：
本发明提供一种阵列基板，包括：依次层叠设置的基板、公共电极层、隔离层、栅极层、第一绝缘层、数据线层、第二绝缘层、第一透明电极、第三绝缘层和第二透明电极，所述隔离层上设有第一过孔，所述第一绝缘层上设有第二过孔，所述第二绝缘层设有第三过孔和与所述第二过孔连通的第四过孔，所述第一透明电极经所述第一过孔、所述第二过孔和所述第四过孔连接至所述公共电极层，所述第三绝缘层设有与所述第三过孔连通的第五过孔，所述第二透明电极经所述第五过孔和所述第三过孔与所述数据线层连接。
其中，所述隔离层包括依次层叠设置的缓冲层、多晶硅层和栅极绝缘层，所述缓冲层覆盖在所述公共电极层上。
其中，所述第一绝缘层上还设有第六过孔，所述栅极绝缘层上设有与所述第六过孔连通的第七过孔，所述数据线层经所述第六过孔和所述第七过孔连接至所述多晶硅层。
其中，所述缓冲层包括SiNx或SiO2或者两者的复合材料。
其中，所述栅极层包括导电块，所述导电块经所述第一过孔与所述公共电极层连接，所述第一透明电极经所述第二过孔和所述第四过孔与所述导电块连接。
本发明提供一种液晶显示面板，其中，包括上述任意一项所述的阵列基板。
本发明提供一种阵列基板的制造方法，其中，包括：在所述基板上形成公共电极层；在所述基板上形成覆盖所述公共电极层的隔离层；在所述隔离层形成第一过孔；在所述隔离层上形成栅极线层；在所述栅极线层上形成第一绝缘层；在所述第一绝缘层上形成数据线层；在所述数据线层上形成第二绝缘层；在所述第二绝缘层形成与所述第一过孔连通的第一长过孔；在所述第二绝缘层上形成第一透明电极，所述第一透明电极经所述第一过孔、所述第一长过孔与所述公共电极层连接；在所述第一透明电极上形成第三绝缘层；在所述第三绝缘层形成连通至所述数据线层的第二长过孔；在所述第三绝缘层上形成第二透明电极，所述第二透明电极经所述第二长过孔与所述数据线层连接。
其中，在所述隔离层上形成栅极线层步骤中包括：在栅极层上形成经所述第一过孔连接所述公共电极层的导电块。
其中，所述在所述基板上形成覆盖所述公共电极层的隔离层步骤中，包括：依次形成缓冲层、多晶硅层和栅极绝缘层，其中，所述缓冲层覆盖在所述公共电极层上。
其中，所述在所述栅极线层上形成第一绝缘层步骤中，包括在所述第一绝缘层上形成连通至所述多晶硅层的第三长过孔。
本发明实施例具有如下优点或有益效果：
本发明中将栅极线层和公共电极层设置在不同的导电层中，并通过隔离层隔开所述栅极线层和所述公共电极层，避免了由于两者距离过近造成的短路形成线类不良异常，提升了阵列基板和液晶显示面板的稳定性。本发明还提供一种上述阵列基板的制造方法。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明阵列基板的剖面结构示意图。
图2是具有图1所述阵列基板的电容结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
此外，以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸地连接，或者一体地连接；可以是机械连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
此外，在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。若本说明书中出现“工序”的用语，其不仅是指独立的工序，在与其它工序无法明确区别时，只要能实现该工序所预期的作用则也包括在本用语中。另外，本说明书中用“～”表示的数值范围是指将“～”前后记载的数值分别作为最小值及最大值包括在内的范围。在附图中，结构相似或相同的用相同的标号表示。
请参与图1，本发明提供一种阵列基板100，包括：基板110、公共电极层120、隔离层130、栅极线层(图未编号)、第一绝缘层150、数据线层(图未编号)、第二绝缘层170、第一透明电极180、第三绝缘层190和第二透明电极182；所述公共电极层120设置于所述基板110上方；所述隔离层130设置于所述基板110上方且覆盖所述公共电极层120，所述隔离层130上设有第一过孔131；所述栅极线层设置于所述隔离层130上方，所述栅极线层包括多条间隔设置的栅极线140；第一绝缘层150覆盖于所述栅极线层上方，所述第一绝缘层150上设有第二过孔152；数据线层设置于所述第一绝缘层150上方，所述数据线层包括多条间隔设置的数据线160；所述第二绝缘层170覆盖在所述数据线层上方，所述第二绝缘层170上设有第三过孔173和与所述第二过孔152连通的第四过孔174；所述第二绝缘层170上方设置有第一透明电极180，所述第一透明电极180经所述第一过孔131、所述第二过孔152和所述第四过孔174与所述公共电极层120连接；第三绝缘层190设置于所述第一透明电极180上方，所述第三绝缘层190设有与所述第三过孔173连通的第五过孔195；第二透明电极182设置于所述第三绝缘层190上方，所述第二透明电极182经所述第三过孔173和所述第五过孔195与所述栅极线层上的栅极线140连接。
本发明中将栅极线层和公共电极层设置在不同的导电层中，并通过隔离层隔开所述栅极线层和所述公共电极层，避免了由于两者距离过近造成的短路形成线类不良异常，提升了液晶显示面板的稳定性。
具体的，所述隔离层130包括依次层叠设置的缓冲层132、多晶硅层133和栅极绝缘层134，所述缓冲层132覆盖在所述公共电极层120上，所述多晶硅层133覆盖介于所述缓冲层132和所述栅极绝缘层134之间。
进一步具体的，所述第一绝缘层150上还设有第六过孔156，所述栅极绝缘层上设有与所述第六过孔156连通的第七过孔137，所述数据线层160经所述第六过孔156和所述第七过孔137连接至所述多晶硅层133。可以理解的是，所述第六过孔156和所述第七过孔137可以在一次蚀刻中同时得到(即下文中的第三长过孔)。同理，所述第五过孔195和所述第三过孔173也可以一次得到(即下文中的第二长过孔)。
请结合参阅图2，本发明中所述第一透明电极180与所述第二透明电极182之间形成第一存储电容Cs1。所述多晶硅层133与所述公共电极层120之间形成第二存储电容Cs2。所述多晶硅层133构成第二存储电容Cs2的一个基板，所述缓冲层132构成存储电容Cs2的绝缘层，所述公共电极层120构成另一个基板。相当于在原有的基础(第一存储电容Cs1)上并联一个等效存储电容。在不改变像素开口率的情况下，增大了存储电容的电容值。
优选的，所述第三绝缘层190和所述缓冲层132的材料为SiNx、Si02或者两者之间任意组合的复合材料。
优选的，所述栅极层还包括导电块141。进一步的所述导电块141为金属导电块。所述导电块141经所述第一过孔131与所述公共电极层120连接，所述第一透明电极180经所述第二过孔152和所述第四过孔174与所述导电块141连接。可以理解的是，所述第二过孔152和所述第四过孔174可以在一次蚀刻中同时形成。
通过第一金属块141使得所述第一透明电极180与所述公共电极层120连接的目的在于：避免由于所述第二过孔152和所述第四过孔174组成的过孔(即下文中的第一长过孔)过深，导致所述第一透明电极180与所述公共电极层120连接时出现断层。
进一步的，为达到良好的遮光效果，公共电极层120可采用钼铝合金、铬金属、钼金属或者其它既具有遮光功能又具有导电性能的材料。
优选的，所述隔离层的厚度为0.2mm～0.35mm。
基于上述阵列基板100，本发明还提供一种采用上述阵列基板100的液晶显示面板。
本发明还提供一种上述阵列基板的制造方法。主要包括如下步骤：
S001：在所述基板上形成公共电极层。
具体的，所述基板为玻璃基板，通过成膜、光刻及刻蚀工艺在所述基板上形成所述公共电极层。
S002：在所述基板上形成覆盖所述公共电极层的隔离层。
具体的，包括利用成膜工艺在所述公共电极层上依次形成缓冲层和多晶硅层，所述缓冲层包括SiNx或SiO2或者两者的复合材料，缓冲层厚度和多晶硅层的顺序不限于此。然后进行非晶硅结晶工艺，然后利用光刻和刻蚀工艺制作有源层图案，并覆盖一层栅极绝缘层。
S003：在所述隔离层形成第一过孔。
具体的，利用干刻工艺在栅绝缘层和下方的缓冲层、多晶硅层上刻蚀所述第一过孔。
S004：在所述隔离层上形成栅极线层。
具体的，利用成膜和光刻工艺制作栅极层，所形成的栅极层包括栅描线和导电块，使公共电极层和导电块层经第一过孔连接，目的是避免过孔过深，造成上方的第一透明电极和公共电极层联通时出现断层。
S004：在所述栅极线层上形成第一绝缘层。
具体的，包括在所述第一绝缘层上利用成膜和光刻工艺形成连通至所述多晶硅层的第三长过孔。
S005：在所述第一绝缘层上形成数据线层。
具体的，利用成膜工艺在所述第一绝缘层上制作数据线层。
S006：在所述数据线层上形成第二绝缘层。
S007：在所述第二绝缘层形成与所述第一过孔连通的第一长过孔。
具体的，所述第一长过孔穿过所述第一绝缘层和所述第二绝缘层。
S008：在所述第二绝缘层上形成第一透明电极，所述第一透明电极经所述第一过孔、所述第一长过孔与所述公共电极层连接。
S009：在所述第一透明电极上形成第三绝缘层。
S010：在所述第三绝缘层形成连通至所述数据线层的第二长过孔。
具体的，利用成膜、光刻工艺制作第三绝缘层，并在所述第三绝缘层上蚀刻处第二长过孔，所述第二长过孔穿过所述一三绝缘层和所述第二绝缘层，并连通至所述数据线层。
S011：在所述第三绝缘层上形成第二透明电极，所述第二透明电极经所述第二长过孔与所述数据线层连接。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。

Claims (10)

1.一种阵列基板，其特征在于，包括：依次层叠设置的基板、公共电极层、隔离层、栅极层、第一绝缘层、数据线层、第二绝缘层、第一透明电极、第三绝缘层和第二透明电极，所述隔离层上设有第一过孔，所述第一绝缘层上设有第二过孔，所述第二绝缘层设有第三过孔和与所述第二过孔连通的第四过孔，所述第一透明电极经所述第一过孔、所述第二过孔和所述第四过孔连接至所述公共电极层，所述第三绝缘层设有与所述第三过孔连通的第五过孔，所述第二透明电极经所述第五过孔和所述第三过孔与所述数据线层连接。
2.如权利要求1所述的阵列基板，其特征在于，所述隔离层包括依次层叠设置的缓冲层、多晶硅层和栅极绝缘层，所述缓冲层覆盖在所述公共电极层上。
3.如权利要求2所述的阵列基板，其特征在于，所述第一绝缘层上还设有第六过孔，所述栅极绝缘层上设有与所述第六过孔连通的第七过孔，所述数据线层经所述第六过孔和所述第七过孔连接至所述多晶硅层。
4.如权利要求2所述的阵列基板，其特征在于，所述缓冲层包括SiNx或SiO2或者两者的复合材料。
5.如权利要求1所述的阵列基板，其特征在于，所述栅极层包括导电块，所述导电块经所述第一过孔与所述公共电极层连接，所述第一透明电极经所述第二过孔和所述第四过孔与所述导电块连接。
6.一种液晶显示面板，其特征在于，包括权利要求1-5任意一项所述的阵列基板。
7.一种阵列基板的制造方法，其特征在于，包括：在所述基板上形成公共电极层；在所述基板上形成覆盖所述公共电极层的隔离层；在所述隔离层形成第一过孔；在所述隔离层上形成栅极线层；在所述栅极线层上形成第一绝缘层；在所述第一绝缘层上形成数据线层；在所述数据线层上形成第二绝缘层；在所述第二绝缘层形成与所述第一过孔连通的第一长过孔；在所述第二绝缘层上形成第一透明电极，所述第一透明电极经所述第一过孔、所述第一长过孔与所述公共电极层连接；在所述第一透明电极上形成第三绝缘层；在所述第三绝缘层形成连通至所述数据线层的第二长过孔；在所述第三绝缘层上形成第二透明电极，所述第二透明电极经所述第二长过孔与所述数据线层连接。
8.如权利要求7所述的阵列基板的制造方法，其特征在于，在所述隔离层上形成栅极线层步骤中包括：在栅极层上形成经所述第一过孔连接所述公共电极层的导电块。
9.如权利要求7所述的阵列基板的制造方法，其特征在于，所述在所述基板上形成覆盖所述公共电极层的隔离层步骤中，包括：依次形成缓冲层、多晶硅层和栅极绝缘层，其中，所述缓冲层覆盖在所述公共电极层上。
10.如权利要求9所述的阵列基板的制造方法，其特征在于，所述在所述栅极线层上形成第一绝缘层步骤中，包括在所述第一绝缘层上形成连通至所述多晶硅层的第三长过孔。
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