CN105917529A - 连接体、连接体的制造方法、连接方法、各向异性导电粘接剂 - Google Patents

连接体、连接体的制造方法、连接方法、各向异性导电粘接剂 Download PDF

Info

Publication number
CN105917529A
CN105917529A CN201580004803.7A CN201580004803A CN105917529A CN 105917529 A CN105917529 A CN 105917529A CN 201580004803 A CN201580004803 A CN 201580004803A CN 105917529 A CN105917529 A CN 105917529A
Authority
CN
China
Prior art keywords
electroconductive particle
electronic unit
anisotropic conductive
particle
circuit substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580004803.7A
Other languages
English (en)
Other versions
CN105917529B (zh
Inventor
筱原诚郎
筱原诚一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Priority to CN202010070103.0A priority Critical patent/CN111508855B/zh
Publication of CN105917529A publication Critical patent/CN105917529A/zh
Application granted granted Critical
Publication of CN105917529B publication Critical patent/CN105917529B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486Located on package parts, e.g. encapsulation, leads, package substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13075Plural core members
    • H01L2224/1308Plural core members being stacked
    • H01L2224/13082Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/13599Material
    • H01L2224/136Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1413Square or rectangular array
    • H01L2224/14133Square or rectangular array with a staggered arrangement, e.g. depopulated array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1413Square or rectangular array
    • H01L2224/14134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/14135Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/273Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27334Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316Lead [Pb] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357Cobalt [Co] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2936Iron [Fe] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29371Chromium [Cr] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29388Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29393Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/29486Coating material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/2949Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981Apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81121Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8113Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81121Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/81132Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399Material
    • H01L2224/81486Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/81488Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83121Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8313Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83121Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/83132Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832Applying energy for connecting
    • H01L2224/83201Compression bonding
    • H01L2224/83203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862Heat curing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874Ultraviolet [UV] curing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9211Parallel connecting processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0635Acrylic polymer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/141Analog devices
    • H01L2924/1426Driver
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/38Effects and problems related to the device integration
    • H01L2924/381Pitch distance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0221Insulating particles having an electrically conductive coating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0233Deformable particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16Inspection; Monitoring; Aligning
    • H05K2203/166Alignment or registration; Control of registration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Liquid Crystal (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Conductive Materials (AREA)

Abstract

即便电路基板的布线间距或电子部件的电极端子被微细间距化,也确保电子部件与电路基板的导通性,并且防止电子部件的电极端子间的短路。在经由各向异性导电粘接剂(1)在电路基板(12)上连接电子部件(18)的连接体(10)中,各向异性导电粘接剂(1)中有规则地配置导电性粒子(4),导电性粒子(4)的粒径为电子部件(18)的连接电极(19)的高度的1/2以下。

Description

连接体、连接体的制造方法、连接方法、各向异性导电粘接剂
技术领域
本发明涉及电子部件和电路基板的连接方法,特别涉及电子部件经由含有导电性粒子的粘接剂连接到电路基板的连接体、连接体的制造方法、电子部件的连接方法及各向异性导电粘接剂。本申请以在日本于2014年1月16日申请的日本专利申请号特愿2014-6285为基础主张优先权,该申请通过参照被引用至本申请。
背景技术
一直以来,作为电视机、PC监视器、便携电话、智能手机、便携式游戏机、平板终端、可穿戴终端、或者车载用监视器等的各种显示单元,采用液晶显示装置或有机EL面板。近年来,在这样的显示装置中,出于微细间距化、轻薄型化等的观点,采用将驱动用IC直接安装于显示面板的玻璃基板上的所谓COG(chip on glass,玻璃覆晶)。
例如采用COG安装方式的液晶显示面板中,如图6(A)(B)所示,在由玻璃基板等构成的透明基板101形成有多个由ITO(氧化铟锡)等构成的透明电极102,在这些透明电极102上连接有液晶驱动用IC 103等的电子部件。液晶驱动用IC 103在安装面对应于透明电极102形成有多个电极端子104,经由各向异性导电膜105热压接到透明基板101上,从而连接电极端子104与透明电极102。
各向异性导电膜105向粘合剂树脂中混入导电性粒子而制成膜状,在两个导体间通过加热压接而以导电性粒子取得导体间的电导通,以粘合剂树脂保持导体间的机械连接。作为构成各向异性导电膜105的粘接剂,通常,会使用可靠性高的热固化性的粘合剂树脂,但是也可以为光固化性的粘合剂树脂或光热并用型的粘合剂树脂。
经由这样的各向异性导电膜105将液晶驱动用IC 103向透明电极102连接的情况下,首先,通过未图示的临时压接单元将各向异性导电膜105临时贴在透明基板101的透明电极102上。接着,经由各向异性导电膜105将液晶驱动用IC 103搭载在透明基板101上,形成临时连接体后,通过热压接头106等的热压接单元将液晶驱动用IC 103与各向异性导电膜105一起向透明电极102侧加热按压。通过利用该热压接头106进行的加热,各向异性导电膜105引起热固化反应,由此液晶驱动用IC 103粘接到透明电极102上。
现有技术文献
专利文献
专利文献1:日本特许第4789738号公报
专利文献2:日本特表2009-535843号公报。
发明内容
发明要解决的课题
随着近年来液晶显示装置和其他电子设备的小型化、高功能化,对电子部件也要求小型化、低矮化,称为凸块的电极端子104的高度也变低。另外,也进行电路基板的布线间距或电子部件的电极端子的微细间距化,利用各向异性导电膜,在电极端子被微细间距化的电路基板上COG连接IC芯片等的电子部件的情况下,为了在窄小化的电极端子间也可靠地夹持导电性粒子并确保导通,需要高密度填充导电性粒子。
然而,如图7所示,若在进行电极端子104的低矮化过程中以高密度填充导电性粒子107,则电极端子104间的端子间短路的发生率变高。即,如图7(A)所示,在电极端子104的高度与以往同样的情况下,由于能确保较宽的端子间面积,即便以高密度填充导电性粒子107,也不会发生分散在端子间的导电性粒子107连续而端子间短路的问题。因而,能够通过导电性粒子107的高密度填充来提高导通性并能谋求防止端子间短路。
然而,如图7(B)所示,在电极端子104被低矮化的电子部件中端子间面积会被窄小化,因此当使用高密度填充导电性粒子107的各向异性导电膜时,在电极端子104的端子间导电性粒子107会相连,从而会引起端子间短路。此外,一般形成在电路基板的电极通过印刷等来以数十nm~数μm级的薄度形成,因此电路基板侧的电极间的短路不会成为问题。
因此,本发明目的在于提供一种即便电路基板的布线间距或电子部件的电极端子被微细间距化,也确保电子部件与电路基板的导通性,并能防止电子部件的电极端子间的短路的连接体、连接体的制造方法、电子部件的连接方法及各向异性导电粘接剂。
用于解决课题的方案
为了解决上述的课题,本发明所涉及的连接体经由各向异性导电粘接剂在电路基板上连接有电子部件,在上述连接体中,上述各向异性导电粘接剂中有规则地配置导电性粒子,上述导电性粒子的粒径为上述电子部件的连接电极的高度的1/2以下。
另外,本发明所涉及的连接体的制造方法经由含有导电性粒子的粘接剂将电子部件搭载在电路基板上,将上述电子部件相对于上述电路基板进行按压,并且使上述粘接剂固化,从而将上述电子部件连接在上述电路基板上,在上述连接体的制造方法中,上述各向异性导电粘接剂中有规则地配置导电性粒子,上述导电性粒子的粒径为上述电子部件的连接电极的高度的1/2以下。
另外,本发明所涉及的电子部件的连接方法经由含有导电性粒子的粘接剂将电子部件搭载在电路基板上,将上述电子部件相对于上述电路基板进行按压,并且使上述粘接剂固化,从而将上述电子部件连接在上述电路基板上,在上述连接方法中,上述各向异性导电粘接剂中有规则地配置导电性粒子,上述导电性粒子的粒径为上述电子部件的连接电极的高度的1/2以下。
另外,本发明所涉及的各向异性导电粘接剂粘着在电路基板的表面,并且搭载有电子部件,从而对于上述电路基板连接上述电子部件,在上述各向异性导电粘接剂中,有规则地配置导电性粒子,上述导电性粒子的粒径为上述电子部件的连接电极的高度的1/2以下。
发明效果
依据本发明,由于各向异性导电粘接剂的导电性粒子有规则地配置,并且导电性粒子粒径为电子部件的连接电极高度的1/2以下,所以在连接电极间不会凝聚导电性粒子,而保持粒子间的距离。因而,即便连接电极间的截面积窄小化也能防止端子间短路。
附图说明
图1是作为连接体的一个例子而示出的液晶显示面板的截面图。
图2是示出液晶驱动用IC与透明基板的连接工序的截面图。
图3是示出各向异性导电膜的截面图。
图4是示出导电性粒子以点阵状规则排列的各向异性导电膜的平面图。
图5(A)是示出具有现有的电极端子的高度的IC芯片的连接状态的截面图,图5(B)是示出本发明中谋求电极端子的低矮化的IC芯片的连接状态的截面图。
图6是示出对液晶显示面板的透明基板连接IC芯片的工序的截面图。
图7(A)是示出具有现有的电极端子的高度的IC芯片的连接状态的截面图,图7(B)是示出现有的结构中谋求电极端子的低矮化的IC芯片的连接状态的截面图。
具体实施方式
以下,参照附图,对适用本发明的连接体、连接体的制造方法、连接方法、各向异性导电粘接剂进行详细说明。此外,本发明并不仅限于以下的实施方式,显然在不脱离本发明的主旨的范围内能够进行各种变更。此外,附图是示意性的,各尺寸的比例等有不同于现实的情况。具体尺寸等应该参考以下的说明进行判断。此外,应当理解到附图相互之间也包含彼此尺寸的关系或比例不同的部分。
[液晶显示面板]
以下,作为适用本发明的连接体,以在液晶显示面板的玻璃基板安装液晶驱动用的IC芯片作为电子部件的情况为例进行说明。该液晶显示面板10如图1所示,对置配置由玻璃基板等构成的两块透明基板11、12,并通过框状的密封材料13来互相粘合这些透明基板11、12。而且,液晶显示面板10通过向由透明基板11、12围绕的空间内封入液晶14而形成面板显示部15。
透明基板11、12以使由ITO(氧化铟锡)等构成的条纹状的一对透明电极16、17互相交叉的方式形成在互相对置的两内侧表面。而且,两透明电极16、17成为通过这两透明电极16、17的该交叉部位构成作为液晶显示的最小单位的像素。
两透明基板11、12之中,一个透明基板12形成为平面尺寸大于另一个透明基板11,在该形成为较大的透明基板12的边缘部12a,设有安装液晶驱动用IC 18作为电子部件的COG安装部20。此外,在COG安装部20形成有透明电极17的端子部17a以及与设在液晶驱动用IC 18的IC侧对准标记22重叠的基板侧对准标记21。
液晶驱动用IC 18通过对像素选择性地施加液晶驱动电压,使液晶的取向局部变化,以能进行既定液晶显示。另外,如图2所示,液晶驱动用IC 18在对透明基板12的安装面18a形成有与透明电极17的端子部17a导通连接的多个电极端子19(凸块)。电极端子19适合使用例如铜凸块、金凸块、或者对铜凸块实施镀金的材料等。
[电极端子]
电极端子19例如使输入凸块沿着安装面18a的一个侧缘排成一列,使输出凸块沿着与一个侧缘对置的另一个侧缘以交错状排成多列。电极端子19和设有透明基板12的COG安装部20的端子部17a分别以同数量且同间距形成,因透明基板12和液晶驱动用IC 18对位连接而连接。
此外,随着近年来液晶显示装置和其他电子设备的小型化、高功能化,对液晶驱动用IC 18等的电子部件也要求小型化、低矮化,电极端子19的高度也变低(例如6~15μm)。
另外,液晶驱动用IC 18在安装面18a形成有通过与基板侧对准标记21重叠来进行对透明基板12的对准的IC侧对准标记22。此外,由于进行透明基板12的透明电极17的布线间距或液晶驱动用IC 18的电极端子19的微细间距化,液晶驱动用IC 18和透明基板12要求高精度的对准调整。
基板侧对准标记21及IC侧对准标记22能够使用通过组合能取得透明基板12和液晶驱动用IC 18的对准的各种标记。
形成在COG安装部20的透明电极17的端子部17a上,利用各向异性导电膜1作为电路连接用粘接剂而连接液晶驱动用IC 18。各向异性导电膜1含有导电性粒子4,用来经由导电性粒子4电连接液晶驱动用IC 18的电极端子19和在透明基板12的边缘部12a形成的透明电极17的端子部17a。该各向异性导电膜1因被热压接头33热压接而粘合剂树脂流化,从而导电性粒子4在端子部17a与液晶驱动用IC 18的电极端子19之间压碎,在该状态下粘合剂树脂固化。由此,各向异性导电膜1将透明基板12和液晶驱动用IC 18电气、机械地连接。
另外,在两透明电极16、17上,形成有实施了既定摩擦处理的取向膜24,以通过该取向膜24规定液晶分子的初始取向。而且,在两透明基板11、12的外侧配置有一对偏振光板25、26,以通过这两偏振光板25、26规定来自背光灯等的光源(未图示)的透射光的振动方向。
[各向异性导电膜]
接着,对各向异性导电膜1进行说明。各向异性导电膜(ACF:Anisotropic ConductiveFilm)1如图3所示,通常,在成为基体材料的剥离膜2上形成含有导电性粒子4的粘合剂树脂层(粘接剂层)3。各向异性导电膜1为热固化型或者紫外线等的光固化型粘接剂,粘着在液晶显示面板10的形成在透明基板12的透明电极17上并且搭载有液晶驱动用IC 18,通过用热压接头33来热加压而流化,从而导电性粒子4在相对置的透明电极17的端子部17a与液晶驱动用IC 18的电极端子19之间压碎,通过加热或者紫外线照射,在导电性粒子压碎的状态下固化。由此,各向异性导电膜1连接透明基板12与液晶驱动用IC 18,从而能够使之导通。
另外,各向异性导电膜1在含有膜形成树脂、热固化性树脂、潜伏性固化剂、硅烷偶联剂等的普通粘合剂树脂层3中以既定图案有规则地排列导电性粒子4。
支撑粘合剂树脂层3的剥离膜2,例如,在PET(聚对苯二甲酸乙二醇酯:PolyEthylene Terephthalate)、OPP(定向聚丙烯:Oriented Polypropylene)、PMP(聚4-甲基戊烯-1:Poly-4-methylpentene-1)、PTFE(聚四氟乙烯:Polytetrafluoroethylene)等上涂敷硅酮等的剥离剂而成,不仅防止各向异性导电膜1的干燥,而且维持各向异性导电膜1的形状。
作为粘合剂树脂层3中含有的膜形成树脂,优选平均分子量为10000~80000左右的树脂。作为膜形成树脂,能举出环氧树脂、改性环氧树脂、尿烷树脂、苯氧基树脂等的各种树脂。其中,出于膜形成状态、连接可靠性等的观点特别优选苯氧基树脂。
作为热固化性树脂,无特别限定,能举出例如市售的环氧树脂、丙烯树脂等。
作为环氧树脂,无特别限定,但是能举出例如萘型环氧树脂、联苯型环氧树脂、酚醛清漆型环氧树脂、双酚型环氧树脂、芪型环氧树脂、三酚甲烷型环氧树脂、酚醛芳烷基型环氧树脂、萘酚型环氧树脂、二聚环戊二烯型环氧树脂、三苯基甲烷型环氧树脂等。这些既可以单独也可以组合2种以上而使用。
作为丙烯树脂,无特别限制,能够根据目的适宜选择丙烯化合物、液态丙烯酸酯等。能够举出例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸异丙酯、丙烯酸异丁酯、环氧丙烯酸酯、二丙烯酸乙二醇酯、二丙烯酸二乙二醇酯、三羟甲基丙烷三丙烯酸酯、二羟甲基三环葵烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羟基-1,3-二丙烯酰氧基丙烷、2,2-双[4-(丙烯酰氧基甲氧基)苯基]丙烷、2,2-双[4-(丙烯酰氧基乙氧基)苯基]丙烷、二环戊烯基丙烯酸酯、三环葵基丙烯酸酯、树状(丙烯酰氧基乙基)异氰脲酸酯、尿烷丙烯酸酯、环氧丙烯酸酯等。此外,也能使用丙烯酸酯为甲基丙烯酸酯的材料。这些既可以单独使用1种,也可以并用2种以上。
作为潜伏性固化剂,无特别限定,但是能举出例如加热固化型、UV固化型等的各种固化剂。潜伏性固化剂通常不会反应,通过热、光、加压等的根据用途而选择的各种引发条件来激活,并开始反应。热活性型潜伏性固化剂的激活方法有:以利用加热的离解反应等生成活性种(阳离子、阴离子、自由基)的方法;在室温附近稳定地分散到环氧树脂中而在高温与环氧树脂相溶/熔化,并开始固化反应的方法;在高温熔出分子筛封入型的固化剂并开始固化反应的方法;利用微囊进行的熔出/固化方法等。作为热活性型潜伏性固化剂,有咪唑类、酰肼类、三氟化硼-胺络化物、锍盐、胺化酰亚胺、聚胺盐、双氰胺等或它们的改性物,这些既可以单独使用,也可为2种以上的混合体。其中,优选微囊型咪唑类潜伏性固化剂。
作为硅烷偶联剂,无特别限定,但是能够举出例如环氧类、氨类、巯基/硫化物类、脲化物类等。通过添加硅烷偶联剂,提高有机材料和无机材料的界面中的粘接性。
[导电性粒子]
作为导电性粒子4,能够举出各向异性导电膜1中使用的公知的任意导电性粒子。作为导电性粒子4,能举出例如镍、铁、铜、铝、锡、铅、铬、钴、银、金等的各种金属或金属合金的粒子;在金属氧化物、碳、石墨、玻璃、陶瓷、塑料等的粒子的表面镀敷金属的粒子;或者,在这些粒子的表面进一步镀敷绝缘薄膜的粒子等。在向树脂粒子的表面镀敷金属的粒子的情况下,作为树脂粒子,能举出例如环氧树脂、酚醛树脂、丙烯树脂、丙烯腈苯乙烯(AS)树脂、苯代三聚氰胺树脂、二乙烯基苯类树脂、苯乙烯类树脂等的粒子。
此外,由于进行透明基板12的透明电极17的布线间距或液晶驱动用IC 18的电极端子19的微细间距化,在透明基板12上COG连接液晶驱动用IC 18的情况下,为了在窄小化的电极端子间中也可靠地夹持导电性粒子从而确保导通,各向异性导电膜1高密度(例如,16000个/mm2)地填充有导电性粒子4。
[导电性粒子的规则排列]
各向异性导电膜1中,导电性粒子4在俯视下以既定排列图案有规则地排列,例如如图4所示,以点阵状且均匀地排列。由于在俯视下有规则地排列,所以与导电性粒子4随机分散的情况相比,各向异性导电膜1即便液晶驱动用IC 18的邻接的电极端子19间微细间距化、端子间面积窄小化,并且导电性粒子4以高密度填充,也能防止液晶驱动用IC 18的连接工序中,导电性粒子4的凝聚物造成的电极端子19间的短路。
另外,各向异性导电膜1因导电性粒子4有规则地排列而在粘合剂树脂层3以高密度填充的情况下,也防止导电性粒子4的凝聚造成的粗密的发生。因而,依据各向异性导电膜1,在微细间距化的端子部17a、电极端子19中也能捕捉导电性粒子4。导电性粒子4的均匀排列图案能够任意设定,诸如俯视下四方点阵、六方点阵等。关于液晶驱动用IC 18的连接工序,将在后面进行详述。
这样的各向异性导电膜1能够通过例如在可延伸的片上涂敷粘着剂,并在其上单层排列导电性粒子4后,以期望的延伸倍率延伸该片的方法;在基板上以既定排列图案排列导电性粒子4后,对被剥离膜2支撑的粘合剂树脂层3转印导电性粒子4的方法;或者对被剥离膜2支撑的粘合剂树脂层3上,经由设有与排列图案对应的开口部的排列板而供给导电性粒子4的方法等来制造。
[粒子个数密度]
另外,各向异性导电膜1被可靠地夹持在微细间距化的电极端子19及端子部17a之间,因此对粘合剂树脂层高密度填充,优选个数密度为10000~60000个/mm2。若粒子个数密度少于10000个/mm2,则微细间距化的电极端子19及端子部17a之间的粒子捕捉数减少,导通电阻会上升。另外,若粒子个数密度多于60000个/mm2,则处于窄小化的电极端子19间的空间的导电性粒子会相连,有可能使邻接的电极端子19间短路。
此外,各向异性导电膜1的形状没有特别限定,但是能够制成例如如图3所示、能够卷绕到卷取盘(巻取リール)6的长尺带形状,并切断成既定长度而使用。
另外,上述实施方式中,作为各向异性导电膜1,以将在粘合剂树脂层3规则排列导电性粒子4的热固化性树脂组合物成形为膜状的粘接膜为例进行了说明,但本发明所涉及的粘接剂并不局限于此,可以为例如层叠仅由粘合剂树脂3构成的绝缘性粘接剂层和由规则排列导电性粒子4的粘合剂树脂3构成的导电性粒子含有层的结构。另外,各向异性导电膜1只要导电性粒子4在俯视下规则排列,则除了如图2所示那样单层排列之外,也可以使导电性粒子4遍及多个粘合剂树脂层3而排列并且俯视下规则排列。另外,各向异性导电膜1也可以在多层结构的至少一个层内以既定距离单一地分散。
[连接工序]
接着,对将液晶驱动用IC 18连接到透明基板12的连接工序进行说明。首先,在透明基板12的形成有端子部17a的COG安装部20上临时贴上各向异性导电膜1。接着,将该透明基板12承载于连接装置的平台上,经由各向异性导电膜1在透明基板12的安装部上配置液晶驱动用IC 18。
接着,通过加热到使粘合剂树脂层3固化的既定温度的热压接头33,以既定压力、时间从液晶驱动用IC 18上开始热加压。由此,各向异性导电膜1的粘合剂树脂层3显示流动性,从液晶驱动用IC 18的安装面18a与透明基板12的COG安装部20之间流出,并且粘合剂树脂层3中的导电性粒子4被夹持在液晶驱动用IC 18的电极端子19与透明基板12的端子部17a之间而压碎。
其结果,通过在电极端子19与端子部17a之间夹持导电性粒子4而电连接,在该状态下被热压接头33加热的粘合剂树脂固化。由此,能够制造在液晶驱动用IC 18的电极端子19与形成在透明基板12的端子部17a之间确保导通性的液晶显示面板10。
不在电极端子19与端子部17a之间的导电性粒子4,在邻接的电极端子19间分散在粘合剂树脂中,维持着电绝缘的状态。由此,仅在液晶驱动用IC 18的输出电极端子19与透明基板12的端子部17a之间取得电导通。此外,作为粘合剂树脂,通过使用自由基聚合反应类的速固化类型的粘合剂树脂,使粘合剂树脂在短的加热时间内也能速固化。另外,作为各向异性导电膜1,不限于热固化型,只要能进行加压连接,也可以使用光固化型或光热并用型的粘接剂。
[导电性粒子粒径]
在此,本发明中,设导电性粒子4的粒径为上述的液晶驱动用IC 18的电极端子19的高度的1/2以下。由此,在微细间距化的电极端子19间能够防止因导电性粒子4相连而造成的端子间短路。
即,如上所述,随着近年来液晶显示装置和其他电子设备的小型化、高功能化,对液晶驱动用IC 18等的电子部件也要求小型化、低矮化,由于电极端子19的高度也变低,所以如图5(A)(B)所示,邻接的电极端子19间的面积也被窄小化。
在本发明中,不仅各向异性导电膜1的导电性粒子4被有规则地配置,而且导电性粒子4的粒径被设为上述液晶驱动用IC 18的电极端子19的高度的1/2以下。由此,液晶显示面板10能够在电极端子19与端子部17a之间可靠地捕捉导电性粒子而确保导通性,且,在邻接的电极端子19间,保持既定的粒子间距离并分散,从而能够防止电极端子19间的短路。
此外,如上所述,导电性粒子的个数密度优选为10000~60000个/mm2。通过具有该个数密度,液晶显示面板10防止窄小化的电极端子19间的短路,并且在微细间距化的电极端子19与端子部17a之间可靠地捕捉导电性粒子4,从而能够提高导通性。
实施例
接着,对本发明的实施例进行说明。在本实施例中,利用导电性粒子规则排列的各向异性导电膜、和导电性粒子随机分散的各向异性导电膜,制成向评价用玻璃基板连接评价用IC的连接体样品,分别测定了电极间的导电性粒子的捕捉数、初始及可靠性实验后的导通电阻、邻接的端子间的短路发生数。
[各向异性导电膜]
评价用IC的连接所使用的各向异性导电膜的粘合剂树脂层,通过调制在溶剂中加入苯氧基树脂(商品名:YP50,新日铁化学公司制)60质量份、环氧树脂(商品名:jER828,三菱化学公司制)40质量份、阳离子类固化剂(商品名:SI-60L,三新化学工业公司制)2质量份的粘合剂树脂组合物,并将该粘合剂树脂组合物涂敷在剥离膜上、烧成而形成。
[评价用IC]
作为评价元件,使用了外形为1.5mm×13mm、厚度0.5mm;凸块(Au-plated,镀金)面积为25μ×140μm;凸块间空间为7.5μm的评价用IC。
[评价用玻璃基板]
作为连接有评价用IC的评价用玻璃基板,使用了外形为30mm×50mm、厚度0.5mm、形成有与评价用IC的凸块同尺寸同间距的梳齿状的电极图案的ITO图案玻璃。
在该评价用玻璃基板临时贴上各向异性导电膜后,进行评价用IC的凸块与评价用玻璃基板的布线电极的对准的同时搭载评价用IC,利用热压接头在180℃、80MPa、5sec的条件下进行热压接,从而制成了连接体样品。关于各连接体样品,测定了处于IC凸块和基板电极之间的导电性粒子的捕捉数、初始及可靠性实验后的导通电阻、邻接的凸块间的短路发生数。
关于处于IC凸块和基板电极之间的导电性粒子的捕捉数,针对各连接体样品,关于全部IC凸块及基板电极计测在1对的评价用IC的凸块与评价用玻璃基板的电极间捕捉的导电性粒子的数,并求其平均数及最少数。另外,导通电阻是在初始及可靠性实验后(85℃85%RH 500小时)测定的。关于凸块间的短路发生数,测定了评价用IC的凸块间的短路的发生数。
另外,关于各连接体样品,计测了导电性粒子彼此的间隔的最短距离(μm)、及评价用IC的凸块的排列方向上的截面图中存在于凸块间的导电性粒子的最大个数。
[实施例1]
实施例1中,使用了导电性粒子规则排列在粘合剂树脂层的各向异性导电膜。在实施例1中使用的各向异性导电膜,通过向能够延伸的片上涂敷粘着剂,并在其上单层排列导电性粒子4后,以期望的延伸倍率延伸该片的状态下,层压粘合剂树脂层而制造。所使用的导电性粒子(商品名:AUL704,积水化学工业公司制)粒径4μm且粒子个数密度为16000个/mm2
另外,实施例1中所使用的评价用IC的凸块高度为15μm且凸块间空间的截面积为112.5μm2(15μm×7.5μm)。
[实施例2]
实施例2中,除了评价用IC的凸块高度为12μm、且凸块间空间的截面积为90μm2(12μm×7.5μm)之外,采用与实施例1相同的条件。
[实施例3]
实施例3中,除了评价用IC的凸块高度为8μm、且凸块间空间的截面积为60μm2(8μm×7.5μm)之外,采用与实施例1相同的条件。
[实施例4]
实施例4中,利用粒径5μm的导电性粒子(商品名:AUL705,积水化学工业公司制),并通过与实施例1相同的制法得到了各向异性导电膜。粒子个数密度为16000个/mm2
另外,实施例4中所使用的评价用IC的凸块高度为10μm、且凸块间空间的截面积为75μm2(10μm×7.5μm)。
[实施例5]
实施例5中,利用与实施例1相同的导电性粒子,并通过与实施例1相同的制法,得到了各向异性导电膜。粒子个数密度为10000个/mm2
另外,实施例5中所使用的评价用IC的凸块高度为8μm、且凸块间空间的截面积为60μm2(10μm×7.5μm)。
[实施例6]
实施例6中,使用粒径3μm的导电性粒子(商品名:AUL703,积水化学工业公司制),并通过与实施例1相同的制法得到了各向异性导电膜。粒子个数密度为60000个/mm2
另外,实施例6中所使用的评价用IC的凸块高度为8μm、且凸块间空间的截面积为60μm2(10μm×7.5μm)。
[比较例1]
比较例1中,使用了通过向粘合剂树脂组合物加入导电性粒子而调制,并涂敷到剥离膜上、烧成,从而制造的导电性粒子随机分散到粘合剂树脂层的各向异性导电膜。所使用的导电性粒子(商品名:AUL704,积水化学工业公司制)粒径4μm且粒子个数密度为16000个/mm2
另外,比较例1中所使用的评价用IC的凸块高度为15μm、且凸块间空间的截面积为112.5μm2(15μm×7.5μm)。
[比较例2]
比较例2中,除了评价用IC的凸块高度为8μm、且凸块间空间的截面积为60μm2(8μm×7.5μm)之外,采用与比较例1相同的条件。
[比较例3]
比较例3中,使用粒径5μm的导电性粒子(商品名:AUL705,积水化学工业公司制),并通过与实施例1相同的制法得到了各向异性导电膜。粒子个数密度为16000个/mm2
另外,比较例3中所使用的评价用IC的凸块高度为8μm、且凸块间空间的截面积为60μm2(8μm×7.5μm)。
如表1所示,在实施例1~6所涉及的连接体样品中,夹持在1对的评价用IC的凸块和评价用玻璃基板的电极间的导电性粒子的数平均7.2以上,初始导通电阻为0.2Ω,可靠性实验后的导通电阻为5Ω以下,是良好的。另外,在实施例1~6所涉及的连接体样品中,凸块间的导电性粒子数最大为1~4,粒子间隔为0.5~2.1μm,凸块间的短路发生数为40ppm以下,成为凸块间的绝缘性也良好的结果。
另一方面,比较例1中,由于导电性粒子随机分散在粘合剂树脂层,所以凸块间的导电性粒子数最大为7个,最少粒子间隔为0μm,即导电性粒子会连续,凸块间的短路发生数成为3000ppm。
另外,比较例2中,凸块高度低到8μm,凸块间空间的截面积也为60μm2,比比较例1还窄小,因此凸块间的导电性粒子数最大为6个,凸块间的短路发生数成为5000ppm。
比较例3中,虽然使用了均匀排列导电性粒子的各向异性导电膜,但导电性粒子的粒径(5μm)大于凸块高度(8μm)的1/2。因此,在凸块间空间会出现导电性粒子相连的部位,凸块间的短路发生数成为60ppm。由此,可知导电性粒子的粒径优选为凸块高度的1/2以下。
此外,实施例5中,导电性粒子的个数密度为10000个/mm2,但是粒子捕捉数最少为6个,而4个以下则为不良,因此实际使用上没有问题。另外实施例6中,导电性粒子的个数密度为60000个/mm2,但是凸块间的短路数为40ppm以下,而50ppm以上则为不良,因此实际使用上没有问题。即,可知各向异性导电膜的粘接前的导电性粒子的个数密度优选为10000~60000个/mm2
标号说明
1 各向异性导电膜;2 剥离膜;3 粘合剂树脂层;4 导电性粒子;6 卷取盘;10 液晶显示面板;11、12 透明基板;12a 边缘部;13 密封材料;14 液晶;15 面板显示部;16、17 透明电极;17a 端子部;18 液晶驱动用IC;18a 安装面;19 电极端子;20 COG安装部;21 基板侧对准标记;22 IC侧对准标记;33 热压接头。

Claims (6)

1.一种连接体,经由各向异性导电粘接剂在电路基板上连接有电子部件,在所述连接体中,
所述各向异性导电粘接剂中有规则地配置导电性粒子,
所述导电性粒子的粒径为所述电子部件的连接电极的高度的1/2以下。
2.如权利要求1所述的连接体,其中,所述各向异性导电粘接剂中,所述导电性粒子的个数密度为10000~60000/mm2
3.如权利要求1或2所述的连接体,其中,所述导电性粒子以点阵状排列。
4.一种连接体的制造方法,经由含有导电性粒子的粘接剂将电子部件搭载在电路基板上,
将所述电子部件相对于所述电路基板进行按压,并且使所述粘接剂固化,从而将所述电子部件连接在所述电路基板上,在所述连接体的制造方法中,
所述各向异性导电粘接剂中有规则地配置导电性粒子,
所述导电性粒子的粒径为所述电子部件的连接电极的高度的1/2以下。
5.一种连接方法,经由含有导电性粒子的粘接剂将电子部件搭载在电路基板上,
将所述电子部件相对于所述电路基板进行按压,并且使所述粘接剂固化,从而将所述电子部件连接在所述电路基板上,在所述连接方法中,
所述各向异性导电粘接剂中有规则地配置导电性粒子,
所述导电性粒子的粒径为所述电子部件的连接电极的高度的1/2以下。
6.一种各向异性导电粘接剂,粘着在电路基板的表面,并且搭载有电子部件,
对于所述电路基板连接所述电子部件,在所述各向异性导电粘接剂中,
有规则地配置导电性粒子,
所述导电性粒子的粒径为所述电子部件的连接电极的高度的1/2以下。
CN201580004803.7A 2014-01-16 2015-01-13 连接体、连接体的制造方法、连接方法、各向异性导电粘接剂 Active CN105917529B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010070103.0A CN111508855B (zh) 2014-01-16 2015-01-13 连接体及其制造方法、连接方法、各向异性导电粘接剂

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-006285 2014-01-16
JP2014006285A JP2015135878A (ja) 2014-01-16 2014-01-16 接続体、接続体の製造方法、接続方法、異方性導電接着剤
PCT/JP2015/050619 WO2015108025A1 (ja) 2014-01-16 2015-01-13 接続体、接続体の製造方法、接続方法、異方性導電接着剤

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010070103.0A Division CN111508855B (zh) 2014-01-16 2015-01-13 连接体及其制造方法、连接方法、各向异性导电粘接剂

Publications (2)

Publication Number Publication Date
CN105917529A true CN105917529A (zh) 2016-08-31
CN105917529B CN105917529B (zh) 2020-02-21

Family

ID=53542914

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580004803.7A Active CN105917529B (zh) 2014-01-16 2015-01-13 连接体、连接体的制造方法、连接方法、各向异性导电粘接剂
CN202010070103.0A Active CN111508855B (zh) 2014-01-16 2015-01-13 连接体及其制造方法、连接方法、各向异性导电粘接剂

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010070103.0A Active CN111508855B (zh) 2014-01-16 2015-01-13 连接体及其制造方法、连接方法、各向异性导电粘接剂

Country Status (6)

Country Link
US (1) US10175544B2 (zh)
JP (1) JP2015135878A (zh)
KR (1) KR102386367B1 (zh)
CN (2) CN105917529B (zh)
TW (1) TWI661027B (zh)
WO (1) WO2015108025A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108058657A (zh) * 2016-11-09 2018-05-22 本田技研工业株式会社 导电部件固定结构

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102593532B1 (ko) * 2016-06-03 2023-10-26 삼성디스플레이 주식회사 이방성 도전 필름 및 이를 이용한 디스플레이 장치
US11566250B2 (en) 2017-10-26 2023-01-31 Noroo Ic Co., Ltd. Production and separation of 3-hydroxypropionic acid
JP7250025B2 (ja) 2017-10-26 2023-03-31 ノロオ アイシー シーオー.エルティーディー. 3-ヒドロキシプロピオン酸の産生及び分離
JP7046351B2 (ja) 2018-01-31 2022-04-04 三国電子有限会社 接続構造体の作製方法
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
EP4130062A4 (en) * 2020-03-26 2024-04-24 Sekisui Chemical Co., Ltd. RESIN PARTICLES, ELECTRICALLY CONDUCTIVE PARTICLES, ELECTRICALLY CONDUCTIVE MATERIAL AND INTERCONNECTION STRUCTURE
JP2023149878A (ja) * 2022-03-31 2023-10-16 デクセリアルズ株式会社 接続構造体及びその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217737A (zh) * 1997-02-27 1999-05-26 精工爱普生株式会社 粘接剂、液晶装置、液晶装置的制造方法和电子装置
CN1319636A (zh) * 2000-03-07 2001-10-31 索尼化学株式会社 电极连接用粘结剂及使用该粘结剂的连接方法
CN1532919A (zh) * 2003-03-24 2004-09-29 ���µ�����ҵ��ʽ���� 电路装置及其制造方法
JP2010251336A (ja) * 2010-07-26 2010-11-04 Sony Chemical & Information Device Corp 異方性導電フィルム及びこれを用いた接続構造体の製造方法
JP5099987B2 (ja) * 2005-07-25 2012-12-19 旭化成イーマテリアルズ株式会社 回路接続方法および接続構造体
CN103079343A (zh) * 2011-10-26 2013-05-01 日立化成工业株式会社 电路零件
WO2013089199A1 (ja) * 2011-12-16 2013-06-20 旭化成イーマテリアルズ株式会社 異方導電性フィルム付き半導体チップ、異方導電性フィルム付き半導体ウェハ、及び半導体装置
WO2013146573A1 (ja) * 2012-03-29 2013-10-03 デクセリアルズ株式会社 導電性粒子、回路接続材料、実装体、及び実装体の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5685939A (en) * 1995-03-10 1997-11-11 Minnesota Mining And Manufacturing Company Process for making a Z-axis adhesive and establishing electrical interconnection therewith
JP3468103B2 (ja) * 1998-06-18 2003-11-17 松下電器産業株式会社 電子部品の実装方法
JP3379456B2 (ja) * 1998-12-25 2003-02-24 ソニーケミカル株式会社 異方導電性接着フィルム
JP2003064324A (ja) * 2001-06-11 2003-03-05 Hitachi Chem Co Ltd 異方導電性接着フィルム及びそれを用いた回路基板の接続方法、回路基板接続体
JP3910527B2 (ja) * 2002-03-13 2007-04-25 シャープ株式会社 液晶表示装置およびその製造方法
KR100559937B1 (ko) * 2003-01-08 2006-03-13 엘에스전선 주식회사 미세회로의 접속방법 및 그에 의한 접속 구조체
US7524748B2 (en) * 2003-02-05 2009-04-28 Senju Metal Industry Co., Ltd. Method of interconnecting terminals and method of mounting semiconductor devices
US20060280912A1 (en) 2005-06-13 2006-12-14 Rong-Chang Liang Non-random array anisotropic conductive film (ACF) and manufacturing processes
JP4887700B2 (ja) * 2005-09-09 2012-02-29 住友ベークライト株式会社 異方導電性フィルムおよび電子・電機機器
JP4789738B2 (ja) 2006-07-28 2011-10-12 旭化成イーマテリアルズ株式会社 異方導電性フィルム
CN101517831B (zh) * 2006-09-26 2010-11-17 日立化成工业株式会社 各向异性导电性粘接剂组合物、各向异性导电性薄膜、电路构件的连接结构、以及被覆粒子的制造方法
JP4780197B2 (ja) * 2006-10-17 2011-09-28 日立化成工業株式会社 被覆粒子及びその製造方法、並びに、被覆粒子を用いた異方導電性接着剤組成物及び異方導電性接着剤フィルム
JP5147263B2 (ja) * 2007-03-09 2013-02-20 旭化成イーマテリアルズ株式会社 回路接続用異方導電性接着フィルム
US20090278213A1 (en) * 2008-05-08 2009-11-12 International Business Machines Corporation Electrode arrays and methods of fabricating the same using printing plates to arrange particles in an array
JP4897778B2 (ja) * 2008-11-20 2012-03-14 ソニーケミカル&インフォメーションデバイス株式会社 接続フィルム、並びに、接合体及びその製造方法
JP4888482B2 (ja) * 2008-12-22 2012-02-29 日立化成工業株式会社 異方導電性接着剤組成物、それを用いた回路端子の接続方法及び接続構造体
KR101669301B1 (ko) * 2008-12-23 2016-10-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 미세다공성 유기실리케이트 재료를 갖는 유기 화학적 센서
JP2010010142A (ja) * 2009-10-07 2010-01-14 Hitachi Chem Co Ltd 熱硬化性回路接続部材及びそれを用いた電極の接続構造、電極の接続方法
JP5589361B2 (ja) * 2009-11-16 2014-09-17 日立化成株式会社 導電粒子及びその製造方法
CN102474025B (zh) * 2010-01-08 2014-05-07 日立化成株式会社 电路连接用粘接膜以及电路连接结构体
JP5206840B2 (ja) * 2010-06-14 2013-06-12 日立化成株式会社 回路接続用接着フィルム、これを用いた回路接続構造体及び回路部材の接続方法
CN103589384B (zh) * 2010-07-26 2016-03-02 日立化成株式会社 粘接剂组合物、连接结构体、连接结构体的制造方法、以及粘接剂组合物的应用
JP5318840B2 (ja) * 2010-11-08 2013-10-16 デクセリアルズ株式会社 異方性導電フィルム、異方性導電フィルムの製造方法、電子部材間の接続方法及び接続構造体
JP5883679B2 (ja) * 2011-02-25 2016-03-15 積水化学工業株式会社 接続構造体の製造方法、異方性導電材料及び接続構造体
JP2014149918A (ja) * 2011-06-06 2014-08-21 Hitachi Chemical Co Ltd フィルム状回路接続材料及び回路接続構造体
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体
JP2013182823A (ja) * 2012-03-02 2013-09-12 Dexerials Corp 接続体の製造方法、及び異方性導電接着剤

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217737A (zh) * 1997-02-27 1999-05-26 精工爱普生株式会社 粘接剂、液晶装置、液晶装置的制造方法和电子装置
CN1319636A (zh) * 2000-03-07 2001-10-31 索尼化学株式会社 电极连接用粘结剂及使用该粘结剂的连接方法
CN1532919A (zh) * 2003-03-24 2004-09-29 ���µ�����ҵ��ʽ���� 电路装置及其制造方法
JP5099987B2 (ja) * 2005-07-25 2012-12-19 旭化成イーマテリアルズ株式会社 回路接続方法および接続構造体
JP2010251336A (ja) * 2010-07-26 2010-11-04 Sony Chemical & Information Device Corp 異方性導電フィルム及びこれを用いた接続構造体の製造方法
CN103079343A (zh) * 2011-10-26 2013-05-01 日立化成工业株式会社 电路零件
WO2013089199A1 (ja) * 2011-12-16 2013-06-20 旭化成イーマテリアルズ株式会社 異方導電性フィルム付き半導体チップ、異方導電性フィルム付き半導体ウェハ、及び半導体装置
WO2013146573A1 (ja) * 2012-03-29 2013-10-03 デクセリアルズ株式会社 導電性粒子、回路接続材料、実装体、及び実装体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108058657A (zh) * 2016-11-09 2018-05-22 本田技研工业株式会社 导电部件固定结构
CN108058657B (zh) * 2016-11-09 2020-11-03 本田技研工业株式会社 导电部件固定结构

Also Published As

Publication number Publication date
US10175544B2 (en) 2019-01-08
CN111508855A (zh) 2020-08-07
CN105917529B (zh) 2020-02-21
KR102386367B1 (ko) 2022-04-13
TWI661027B (zh) 2019-06-01
US20160327826A1 (en) 2016-11-10
KR20160108324A (ko) 2016-09-19
JP2015135878A (ja) 2015-07-27
WO2015108025A1 (ja) 2015-07-23
CN111508855B (zh) 2024-01-02
TW201540811A (zh) 2015-11-01

Similar Documents

Publication Publication Date Title
CN105917529A (zh) 连接体、连接体的制造方法、连接方法、各向异性导电粘接剂
CN106415937A (zh) 连接体及连接体的制造方法
CN105934816A (zh) 连接体
CN105359354B (zh) 导电性粘接膜的制造方法、导电性粘接膜、连接体的制造方法
CN105358642B (zh) 导电性粘接膜的制造方法、导电性粘接膜、连接体的制造方法
CN105940486A (zh) 对准方法、电子部件的连接方法、连接体的制造方法、连接体、各向异性导电膜
CN106664804A (zh) 连接体及连接体的制造方法
CN108476591A (zh) 连接体、连接体的制造方法、检测方法
JP6959303B2 (ja) 接続体、接続体の製造方法及び検査方法
CN109722174A (zh) 导电性粘接膜的制造方法、导电性粘接膜、连接体的制造方法
JP7369756B2 (ja) 接続体及び接続体の製造方法
CN102906941B (zh) 各向异性导电膜及其制造方法、电子部件之间的连接方法以及连接结构体
CN104206032A (zh) 连接体的制造方法及电子部件的连接方法
CN107005012B (zh) 连接体的检查方法、连接体、导电性粒子及各向异性导电粘接剂
CN107230646A (zh) 连接体的制造方法
JP2019140413A (ja) 接続体、接続体の製造方法、接続方法
CN105814675B (zh) 电子部件、连接体、连接体的制造方法及电子部件的连接方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1225168

Country of ref document: HK

GR01 Patent grant
GR01 Patent grant