JP6959303B2 - 接続体、接続体の製造方法及び検査方法 - Google Patents
接続体、接続体の製造方法及び検査方法 Download PDFInfo
- Publication number
- JP6959303B2 JP6959303B2 JP2019135412A JP2019135412A JP6959303B2 JP 6959303 B2 JP6959303 B2 JP 6959303B2 JP 2019135412 A JP2019135412 A JP 2019135412A JP 2019135412 A JP2019135412 A JP 2019135412A JP 6959303 B2 JP6959303 B2 JP 6959303B2
- Authority
- JP
- Japan
- Prior art keywords
- terminals
- transparent substrate
- input
- indentations
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
- H05K1/0269—Marks, test patterns or identification means for visual or optical inspection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29316—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29357—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/2936—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29371—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09918—Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/166—Alignment or registration; Control of registration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Eyeglasses (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
以下では、本発明が適用された接続体として、ガラス基板に、電子部品として液晶駆動用のICチップが実装された液晶表示パネルを例に説明する。この液晶表示パネル10は、図1に示すように、ガラス基板等からなる二枚の透明基板11,12が対向配置され、これら透明基板11,12が枠状のシール13によって互いに貼り合わされている。そして、液晶表示パネル10は、透明基板11,12によって囲繞された空間内に液晶14が封入されることによりパネル表示部15が形成されている。
次いで、異方性導電フィルム1について説明する。異方性導電フィルム(ACF:Anisotropic Conductive Film)1は、図5に示すように、通常、基材となる剥離フィルム2上に導電性粒子4を含有するバインダー樹脂層(接着剤層)3が形成されたものである。異方性導電フィルム1は、熱硬化型あるいは紫外線等の光硬化型の接着剤であり、液晶表示パネル10の透明基板12に形成された入出力端子19a,19b上に貼着されるとともに液晶駆動用IC18が搭載され、熱圧着ヘッド33により熱加圧されることにより流動化して導電性粒子4が相対向する透明電極17の入出力端子19a,19bと液晶駆動用IC18の入出力バンプ21a,21bとの間で押し潰され、加熱あるいは紫外線照射により、導電性粒子が押し潰された状態で硬化する。これにより、異方性導電フィルム1は、透明基板12と液晶駆動用IC18とを接続し、導通させることができる。
導電性粒子4としては、異方性導電フィルム1において使用されている公知の何れの導電性粒子を挙げることができる。導電性粒子4としては、例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金等の各種金属や金属合金の粒子、金属酸化物、カーボン、グラファイト、ガラス、セラミック、プラスチック等の粒子の表面に金属をコートしたもの、或いは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。樹脂粒子の表面に金属をコートしたものである場合、樹脂粒子としては、例えば、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン(AS)樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子を挙げることができる。導電性粒子4の大きさは1〜10μmが好ましいが、本発明はこれに限定されるものではない。
異方性導電フィルム1は、導電性粒子4が平面視において所定の配列パターンで規則的に配列され、例えば図6や図7に示すように、格子状かつ均等に配列され、あるいは六方格子状に配列される。このような導電性粒子4の配列距離は適宜調整することができる。即ち、配列の方向によって異なる配列距離であってもよい。後述するように、平面視において規則的に配列されることにより、異方性導電フィルム1は、導電性粒子4がランダムに分散されている場合に比して、液晶駆動用IC18の接続後における検査において、入出力端子19a,19bに現れる圧痕30の視認性を向上させることができる。
次いで、透明基板12に液晶駆動用IC18を接続する接続工程について説明する。先ず、透明基板12の入出力端子19a,19bが形成された実装部27上に異方性導電フィルム1を仮貼りする。次いで、この透明基板12を接続装置のステージ上に載置し、透明基板12の実装部27上に異方性導電フィルム1を介して液晶駆動用IC18を配置する。
入出力バンプ21a,21bとの間で導電性粒子4が押圧されることにより、透明基板12側から入出力端子19a,19bの箇所に、圧痕30を観察できる。液晶駆動用IC18の接続後、透明基板12の裏面(入出力端子19a,19bの反対側)より目視(顕微鏡など)あるいは撮像画像によって観察することで接続性の検査を行うことができる。
また、液晶表示パネル10は、近接する入出力端子19a,19b同士で、圧痕30の配列の一部が同一又は相似性を持つことが好ましい。これにより、液晶表示パネル10は、圧痕30の相対比較を容易に行うことができ、検査の判定基準の設定や、判定評価も迅速、的確に行うことができる。特に、目視にて検査を行う場合には、例えば隣り合う入出力端子19a,19b同士で圧痕30の配列が同一又は相似性をもって現れれば、相互の圧痕の評価を容易かつ迅速に行うことができる。これを繰り返すことで、押圧面全域の把握が高精度で且つ容易に行えることになる。
また、圧痕30は、一つの入出力端子19a,19b内における全圧痕30の圧痕間距離が平均圧痕間距離±30%以内であることが好ましく、より好ましくは15%以内、更により好ましくは7%以内である。圧痕間距離とは、ある圧痕30と近接する圧痕30のうち外縁間の最短距離が最も短い圧痕30との当該外縁間の最短距離をいい、平均圧痕間距離とは、一つの入出力端子19a,19b内における全圧痕30の圧痕間距離の平均値をいう。これにより、本発明では、圧痕30の検査工程において、一つの入出力端子19a,19b内における押圧の均一性も検査することができる。
また、圧痕30は、一つの入出力端子19a,19b内における平均圧痕間距離と、当該入出力端子19a,19bが配列されている端子列の中央の入出力端子19aM,19bMにおける平均圧痕間距離との差が±30%以内であることが好ましく、より好ましくは15%以内、更により好ましくは7%以内である。これにより、本発明では、圧痕30の検査工程において、一つの入出力端子列20a,20b内における押圧の均一性も検査することができる。なお、入出力端子列20a,20bに奇数個の入出力端子19a、9bが配列されている場合は、中央の入出力端子19aM,19bMは、当該端子列の真ん中の端子をいい、入出力端子列20a,20bに偶数個の入出力端子19a、9bが配列されている場合は、中央の入出力端子19aM,19bMは、当該端子列の真ん中2つの端子をいう。
ここで、液晶駆動用IC18の入出力バンプ21a,21bは、導電性粒子4を捕捉する表面に、導電性粒子4の粒子径の50%以内の高低差を有する凹凸部28が設けられたものでもよい。凹凸部28は、例えば図10、図11に示すように、導電性粒子4を捕捉する表面の両側縁、あるいは中央部が突出することにより形成される。また、凹凸部28の高低差とは、入出力バンプ21a,21bの表面において最も高い凸部28aと最も低い凹部28bとの差をいうものとする。
次いで、本発明の第1の実施例について説明する。第1の実施例では、導電性粒子が規則配列された異方性導電フィルムと、導電性粒子がランダムに分散された異方性導電フィルムを用いて、評価用ガラス基板に評価用ICを接続した接続体サンプルを作成し、それぞれ評価用ガラス基板の端子に現れる圧痕の個数及び独立性を評価するとともに、初期導通抵抗、隣接するICバンプ間のショート発生率を測定した。
評価用ICの接続に用いる異方性導電フィルムのバインダー樹脂層は、フェノキシ樹脂(商品名:YP50、新日鐵化学社製)60質量部、エポキシ樹脂(商品名:jER828、三菱化学社製)40質量部、カチオン系硬化剤(商品名:SI‐60L、三新化学工業社製)2質量部を溶剤に加えたバインダー樹脂組成物を調整し、このバインダー樹脂組成物を剥離フィルム上に塗布、焼成することにより形成した。
導通抵抗測定用の評価素子として、外形;0.7mm×20mm、厚み0.2mm、バンプ(Au‐plated);幅15μ×長さ100μm、高さ12μmの評価用ICを用いた。
ICバンプ間ショート測定用の評価素子として、外形;0.7mm×20mm、厚み0.2mm、バンプ(Au‐plated);幅15μ×長さ100μm、高さ12μm、バンプ間スペース幅;7.5μmの評価用ICを用いた。
導通抵抗測定用の評価用IC及びICバンプ間ショート測定用の評価用ICが接続される評価用ガラス基板として、外形;30mm×50mm、厚み0.5mm、導通抵抗測定用の評価用ICのバンプと同サイズ同ピッチの端子が複数配列された端子列が形成されたITOパターングラスを用いた。
実施例1では、導電性粒子がバインダー樹脂層に規則配列された異方性導電フィルムを用いた。実施例1で用いた異方性導電フィルムは、延伸可能なシート上に粘着剤を塗布し、その上に導電性粒子を格子状かつ均等に単層配列した後、当該シートを所望の延伸倍率で延伸させた状態で、バインダー樹脂層をラミネートすることにより製造した。使用した導電性粒子(商品名:AUL704、積水化学工業社製)は粒子径4μmで、接続前における粒子間距離は0.5μm、粒子個数密度は28000個/mm2である。
実施例2では、接続前における粒子間距離が1μm、粒子個数密度が16000個/mm2の異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
実施例3では、接続前における粒子間距離が1.5μm、粒子個数密度が10500個/mm2の異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
実施例4では、接続前における粒子間距離が3μm、粒子個数密度が5200個/mm2の異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
実施例5では、粒子径が3μmの導電性粒子(商品名:AUL703、積水化学工業社製)を用い、接続前における粒子間距離が0.5μm、粒子個数密度が50000個/mm2の異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
比較例1では、バインダー樹脂組成物に導電性粒子を加えて調整し、剥離フィルム上に塗布、焼成することにより、バインダー樹脂層に導電性粒子がランダムに分散されている異方性導電フィルムを用いた。使用した導電性粒子(商品名:AUL704、積水化学工業社製)は粒子径4μmで、粒子個数密度は100000個/mm2である。
比較例2では、粒子個数密度が60000個/mm2である他は、比較例1と同じ条件とした。
次いで、本発明の第2の実施例について説明する。第2の実施例では、導電性粒子が規則配列された異方性導電フィルムと、導電性粒子がランダムに分散された異方性導電フィルムを用いるとともに、バンプ表面に導電性粒子の粒子径の50%以内の高低差を有する凹凸部が形成された評価用ICを用いて接続体サンプルを作成し、それぞれ評価用ガラス基板の端子に現れる圧痕の個数及び独立性を評価するとともに、初期及び信頼性試験後の導通抵抗、隣接するICバンプ間のショート発生率を測定した。
実施例6では実施例1で用いた異方性導電フィルムを用い、実施例7では実施例2で用いた異方性導電フィルムを用い、実施例8では実施例3で用いた異方性導電フィルムを用い、実施例9では実施例4で用いた異方性導電フィルムを用い、実施例10では実施例5で用いた異方性導電フィルムを用いた。
また、比較例3では比較例1で用いた異方性導電フィルムを用い、比較例4では比較例2で用いた異方性導電フィルムを用いた。
Claims (12)
- 透明基板上に導電性粒子が配列された異方性導電接着剤を介して電子部品が接続された接続体の接続状態を外観検査により検査する検査方法において、
上記透明基板の端子に現れる上記異方性導電接着剤に含有された導電性粒子の圧痕及び圧痕の周辺部位を比較し、上記圧痕を形成する曲線を識別して、接続状態を検査し、
上記圧痕は、上記透明基板の端子内で重複せず、個々に独立した状態で規則的に現れる検査方法。 - 目視により、上記検査を行う請求項1に記載の検査方法。
- 上記透明基板は、上記端子が配列する端子列を有し、
上記端子列の中央の端子内における圧痕を検査する請求項1又は2に記載の検査方法。 - 上記透明基板は、上記端子が配列する端子列を有し、
上記端子列の両端の端子内における圧痕を検査する請求項1〜3のいずれか1項に記載の検査方法。 - 上記透明基板は、上記端子が配列する端子列を有し、
上記端子列の中央の端子に隣接した端子内における圧痕を検査する請求項1〜4のいずれか1項に記載の検査方法。 - 上記透明基板は、上記端子が配列する端子列を有し、
上記端子列の両端の端子に隣接した端子内における圧痕を検査する請求項1〜5のいずれか1項に記載の検査方法。 - 一つの端子内において55%以上の圧痕が独立して存在している請求項1〜6のいずれか1項に記載の検査方法。
- 上記端子内における圧痕の最も近接する他の圧痕との外縁間の距離の差が、同一端子内における平均から±30%以内である請求項1〜7のいずれか1項に記載の検査方法。
- 透明基板上に、導電性粒子を含有した接着剤を介して電子部品を搭載し、
上記電子部品を上記透明基板に対して押圧するとともに、上記接着剤を硬化させることにより、上記電子部品を上記透明基板上に接続する接続体の製造方法において、
上記接着剤は、バインダー樹脂に導電性粒子が配列され、
上記透明基板の端子に現れる上記接着剤に含有された導電性粒子の圧痕及び圧痕の周辺部位を比較し、上記圧痕を形成する曲線を識別して、上記電子部品と上記透明基板との接続状態を外観検査により検査する工程を有し、
上記圧痕は、上記透明基板の端子内で重複せず、個々に独立した状態で規則的に現れる接続体の製造方法。 - 目視により、上記検査を行う請求項9に記載の接続体の製造方法。
- 透明基板と、
上記透明基板上に異方性導電接着剤を介して接続された電子部品とを備え、
上記透明基板の端子には、上記異方性導電接着剤に含有された導電性粒子による複数の圧痕が面内方向に配列され、
上記圧痕は、円形とした場合の40%以上の曲線からなり、
上記圧痕は、上記透明基板の端子内で重複せず、個々に独立した状態で規則的に現れ、目視により、上記圧痕の周辺部位と比較し、上記圧痕を形成する曲線を識別して、上記電子部品と上記透明基板との接続状態を検査可能な視認性を有し、
上記透明基板は上記端子が配列する端子列を有し、上記圧痕は上記端子列内の全端子において同様の視認性を有する接続体。 - 目視により、上記検査が可能な視認性を有する請求項11に記載の接続体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014036743 | 2014-02-27 | ||
JP2014036743 | 2014-02-27 | ||
JP2015034548A JP2015179831A (ja) | 2014-02-27 | 2015-02-24 | 接続体、接続体の製造方法及び検査方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015034548A Division JP2015179831A (ja) | 2014-02-27 | 2015-02-24 | 接続体、接続体の製造方法及び検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019186577A JP2019186577A (ja) | 2019-10-24 |
JP6959303B2 true JP6959303B2 (ja) | 2021-11-02 |
Family
ID=54009106
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015034548A Pending JP2015179831A (ja) | 2014-02-27 | 2015-02-24 | 接続体、接続体の製造方法及び検査方法 |
JP2019135412A Active JP6959303B2 (ja) | 2014-02-27 | 2019-07-23 | 接続体、接続体の製造方法及び検査方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015034548A Pending JP2015179831A (ja) | 2014-02-27 | 2015-02-24 | 接続体、接続体の製造方法及び検査方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9980375B2 (ja) |
JP (2) | JP2015179831A (ja) |
KR (2) | KR102519281B1 (ja) |
CN (2) | CN106170852A (ja) |
TW (1) | TWI643273B (ja) |
WO (1) | WO2015129792A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102513996B1 (ko) * | 2016-03-15 | 2023-03-24 | 삼성디스플레이 주식회사 | 표시 장치 |
CN109168250B (zh) * | 2018-10-24 | 2020-04-17 | 合肥鑫晟光电科技有限公司 | 一种电路板及其制作方法、使用方法、显示装置 |
US11217557B2 (en) * | 2019-05-14 | 2022-01-04 | Innolux Corporation | Electronic device having conductive particle between pads |
CN111179750A (zh) * | 2019-12-12 | 2020-05-19 | 武汉华星光电技术有限公司 | 显示面板的结构和其制作方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2596960B2 (ja) * | 1988-03-07 | 1997-04-02 | シャープ株式会社 | 接続構造 |
JP4115832B2 (ja) | 2002-12-27 | 2008-07-09 | 東芝松下ディスプレイテクノロジー株式会社 | 半導体素子及び液晶表示パネル |
KR101051013B1 (ko) | 2003-12-16 | 2011-07-21 | 삼성전자주식회사 | 구동 칩 및 이를 갖는 표시장치 |
CN100416343C (zh) * | 2004-01-21 | 2008-09-03 | 友达光电股份有限公司 | 增加金属连线可靠度的结构 |
JP3976740B2 (ja) * | 2004-02-16 | 2007-09-19 | テクノス株式会社 | 基板検査装置及び検査方法 |
CN100489630C (zh) * | 2005-03-08 | 2009-05-20 | 友达光电股份有限公司 | 导电凸块和显示面板 |
CN100492627C (zh) * | 2005-10-24 | 2009-05-27 | 财团法人工业技术研究院 | 芯片结构、芯片封装结构及其工艺 |
JP4789738B2 (ja) | 2006-07-28 | 2011-10-12 | 旭化成イーマテリアルズ株式会社 | 異方導電性フィルム |
JP2008210908A (ja) * | 2007-02-26 | 2008-09-11 | Tokai Rubber Ind Ltd | 電子部品の実装方法 |
JP4922800B2 (ja) * | 2007-03-19 | 2012-04-25 | 株式会社東芝 | 電子機器の製造方法 |
JP4880533B2 (ja) * | 2007-07-03 | 2012-02-22 | ソニーケミカル&インフォメーションデバイス株式会社 | 異方性導電膜及びその製造方法、並びに接合体 |
JP4631889B2 (ja) * | 2007-09-03 | 2011-02-16 | 日立化成工業株式会社 | 接続部材および該接続部材を用いた電極の接続構造並びに接続方法 |
CN101849322B (zh) * | 2007-09-20 | 2012-07-04 | 索尼化学&信息部件株式会社 | 各向异性导电膜及其制造方法、以及使用该各向异性导电膜的接合体 |
JP5622137B2 (ja) * | 2007-10-29 | 2014-11-12 | デクセリアルズ株式会社 | 電気的接続体及びその製造方法 |
JP5145110B2 (ja) * | 2007-12-10 | 2013-02-13 | 富士フイルム株式会社 | 異方導電性接合パッケージの製造方法 |
JP4814277B2 (ja) * | 2008-04-18 | 2011-11-16 | ソニーケミカル&インフォメーションデバイス株式会社 | 接合体、該接合体の製造方法、及び該接合体に用いられる異方性導電膜 |
JP5307617B2 (ja) * | 2009-04-27 | 2013-10-02 | 三菱電機株式会社 | 基板の実装状態検査方法および基板の実装状態検査装置 |
JP2011233624A (ja) * | 2010-04-26 | 2011-11-17 | Mitsubishi Electric Corp | 半導体素子及び該半導体素子を備える電子機器 |
JP6002500B2 (ja) * | 2011-08-05 | 2016-10-05 | 積水化学工業株式会社 | 接続構造体の製造方法 |
WO2013089199A1 (ja) * | 2011-12-16 | 2013-06-20 | 旭化成イーマテリアルズ株式会社 | 異方導電性フィルム付き半導体チップ、異方導電性フィルム付き半導体ウェハ、及び半導体装置 |
JP5209778B2 (ja) * | 2011-12-27 | 2013-06-12 | デクセリアルズ株式会社 | 異方性導電膜及びこれを用いた接合体 |
-
2015
- 2015-02-24 JP JP2015034548A patent/JP2015179831A/ja active Pending
- 2015-02-26 CN CN201580010878.6A patent/CN106170852A/zh active Pending
- 2015-02-26 TW TW104106244A patent/TWI643273B/zh active
- 2015-02-26 KR KR1020227025108A patent/KR102519281B1/ko active IP Right Grant
- 2015-02-26 US US15/119,195 patent/US9980375B2/en active Active
- 2015-02-26 KR KR1020167023122A patent/KR102424343B1/ko active IP Right Grant
- 2015-02-26 WO PCT/JP2015/055548 patent/WO2015129792A1/ja active Application Filing
- 2015-02-26 CN CN202111204563.9A patent/CN114038803A/zh active Pending
-
2019
- 2019-07-23 JP JP2019135412A patent/JP6959303B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR102424343B1 (ko) | 2022-07-25 |
WO2015129792A1 (ja) | 2015-09-03 |
TW201603149A (zh) | 2016-01-16 |
US9980375B2 (en) | 2018-05-22 |
CN114038803A (zh) | 2022-02-11 |
KR20220106239A (ko) | 2022-07-28 |
JP2015179831A (ja) | 2015-10-08 |
KR20160127000A (ko) | 2016-11-02 |
US20170013717A1 (en) | 2017-01-12 |
KR102519281B1 (ko) | 2023-04-10 |
JP2019186577A (ja) | 2019-10-24 |
TWI643273B (zh) | 2018-12-01 |
CN106170852A (zh) | 2016-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6959303B2 (ja) | 接続体、接続体の製造方法及び検査方法 | |
WO2016013593A1 (ja) | 接続体、及び接続体の製造方法 | |
KR102067957B1 (ko) | 접속체, 접속체의 제조 방법, 검사 방법 | |
US10175544B2 (en) | Connection body, method for manufacturing a connection body, connecting method and anisotropic conductive adhesive agent | |
JP6645730B2 (ja) | 接続体及び接続体の製造方法 | |
JP7369756B2 (ja) | 接続体及び接続体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190829 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200430 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200616 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201009 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210302 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210506 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210629 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210907 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211007 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6959303 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |