CN105874562B - 用于选择性移除硬遮罩的移除组合物及其方法 - Google Patents

用于选择性移除硬遮罩的移除组合物及其方法 Download PDF

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Publication number
CN105874562B
CN105874562B CN201480055153.4A CN201480055153A CN105874562B CN 105874562 B CN105874562 B CN 105874562B CN 201480055153 A CN201480055153 A CN 201480055153A CN 105874562 B CN105874562 B CN 105874562B
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acid
ammonium
weight
composition
acids
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CN105874562A (zh
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H·崔
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EKC Technology Inc
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EKC Technology Inc
EI Du Pont de Nemours and Co
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Priority claimed from PCT/US2014/059848 external-priority patent/WO2015054464A1/en
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    • H—ELECTRICITY
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    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
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    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
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    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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    • C23F1/10—Etching compositions
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    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
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    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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    • C23F1/40—Alkaline compositions for etching other metallic material
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    • G03F7/26—Processing photosensitive materials; Apparatus therefor
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    • G03F7/422—Stripping or agents therefor using liquids only
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  • Inorganic Chemistry (AREA)
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  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN201480055153.4A 2013-10-11 2014-10-09 用于选择性移除硬遮罩的移除组合物及其方法 Active CN105874562B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361889968P 2013-10-11 2013-10-11
US61/889,968 2013-10-11
US14/103,303 2013-12-11
USPCT/US2013/074356 2013-12-11
US14/103,303 US20150104952A1 (en) 2013-10-11 2013-12-11 Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
PCT/US2014/059848 WO2015054464A1 (en) 2013-10-11 2014-10-09 Removal composition for selectively removing hard mask and methods thereof
PCT/US2013/074356 WO2015053800A2 (en) 2013-10-11 2014-11-14 Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper

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CN105874562A CN105874562A (zh) 2016-08-17
CN105874562B true CN105874562B (zh) 2019-05-14

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CN201480055153.4A Active CN105874562B (zh) 2013-10-11 2014-10-09 用于选择性移除硬遮罩的移除组合物及其方法
CN201480055151.5A Active CN105612599B (zh) 2013-10-11 2014-10-09 用于选择性移除硬遮罩的移除组合物
CN201480055154.9A Pending CN105874568A (zh) 2013-10-11 2014-11-14 用于从包含低介电常数介电材料和铜的半导体设备基板选择性移除金属硬遮罩和其它残留物的方法和组合物

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CN201480055151.5A Active CN105612599B (zh) 2013-10-11 2014-10-09 用于选择性移除硬遮罩的移除组合物
CN201480055154.9A Pending CN105874568A (zh) 2013-10-11 2014-11-14 用于从包含低介电常数介电材料和铜的半导体设备基板选择性移除金属硬遮罩和其它残留物的方法和组合物

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Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US10570316B2 (en) * 2014-07-15 2020-02-25 Basf Se Chemical mechanical polishing (CMP) composition
WO2016068182A1 (ja) * 2014-10-31 2016-05-06 富士フイルム株式会社 Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
US10538846B2 (en) * 2015-12-11 2020-01-21 Dongwoo Fine-Chem Co., Ltd. Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device
JP6626748B2 (ja) * 2016-03-09 2019-12-25 株式会社Adeka タンタル含有層用エッチング液組成物及びエッチング方法
EP3436621B1 (en) * 2016-03-29 2020-02-12 Technic France Solution and method for etching titanium based materials
US10577571B2 (en) * 2016-11-08 2020-03-03 Ecolab Usa Inc. Non-aqueous cleaner for vegetable oil soils
KR102770063B1 (ko) * 2016-11-29 2025-02-21 솔브레인 주식회사 식각용 조성물 및 식각용 조성물을 이용한 반도체 소자의 식각 방법
US11035044B2 (en) * 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films
KR102527728B1 (ko) * 2017-03-31 2023-04-28 간또 가가꾸 가부시끼가이샤 티타늄층 또는 티타늄 함유층의 에칭액 조성물 및 에칭 방법
CN107148156B (zh) * 2017-05-08 2019-06-28 广东光华科技股份有限公司 3,6-二氧杂-1,8-辛二胺四乙酸衍生物的应用及osp处理液
CN107229193B (zh) * 2017-07-25 2019-04-23 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
CN107357143B (zh) 2017-07-25 2018-06-19 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
US10870799B2 (en) * 2017-08-25 2020-12-22 Versum Materials Us, Llc Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
WO2019126155A1 (en) 2017-12-18 2019-06-27 Entegris, Inc. Chemical resistant multi-layer coatings applied by atomic layer deposition
US11499236B2 (en) * 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
US11017995B2 (en) * 2018-07-26 2021-05-25 Versum Materials Us, Llc Composition for TiN hard mask removal and etch residue cleaning
GB201813368D0 (en) 2018-08-16 2018-10-03 Lam Res Ag Etchant composition
US11085011B2 (en) 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
KR102665340B1 (ko) * 2018-09-18 2024-05-14 삼성전자주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법
KR102668574B1 (ko) * 2019-03-06 2024-05-24 동우 화인켐 주식회사 식각 조성물
KR20220002555A (ko) 2019-05-01 2022-01-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 에칭 조성물
MY209604A (en) 2019-05-23 2025-07-24 Basf Se Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
TWI900187B (zh) * 2019-06-03 2025-10-01 美商富士軟片電子材料美國股份有限公司 蝕刻組成物
CN114258424B (zh) * 2019-06-13 2023-07-04 富士胶片电子材料美国有限公司 蚀刻组合物
CN110459468A (zh) * 2019-08-29 2019-11-15 上海华力集成电路制造有限公司 TiN薄膜的刻蚀方法
JP7766020B2 (ja) * 2019-09-10 2025-11-07 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
EP3825441A1 (en) * 2019-11-21 2021-05-26 COVENTYA S.p.A. An electrolytic treatment device for preparing plastic parts to be metallized and a method for etching plastic parts
CN113130292A (zh) * 2019-12-31 2021-07-16 安集微电子科技（上海）股份有限公司 一种等离子体刻蚀残留物清洗液
KR102877724B1 (ko) * 2020-02-05 2025-10-29 삼성전자주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법
CN113430060B (zh) * 2020-03-23 2024-04-19 上海新阳半导体材料股份有限公司 用于移除硬遮罩的钨相容性清洗液、其制备方法及应用
CN113430063B (zh) * 2020-03-23 2024-02-23 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗液、其制备方法及应用
CN113430066B (zh) * 2020-03-23 2024-04-19 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN113430072B (zh) * 2020-03-23 2024-05-07 上海新阳半导体材料股份有限公司 移除硬遮罩的钴兼容性半水基清洗液、其制备方法及应用
CN113528255A (zh) * 2020-04-15 2021-10-22 安集微电子科技（上海）股份有限公司 一种化学清洗液及其使用方法
TWI824299B (zh) 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
CN112323136A (zh) * 2020-10-26 2021-02-05 深圳市裕展精密科技有限公司 退镀液以及退镀方法
CN113150884B (zh) * 2021-04-27 2022-12-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的制备方法
CN113161234B (zh) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
JP7890811B2 (ja) * 2021-06-01 2026-07-15 上村工業株式会社 銅エッチング液
US11550229B1 (en) 2021-06-18 2023-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Enhancing lithography operation for manufacturing semiconductor devices
JP7729988B2 (ja) * 2021-10-20 2025-08-26 インテグリス・インコーポレーテッド 選択的ウェットエッチング組成物および方法
TW202407150A (zh) 2022-05-10 2024-02-16 日商東京應化工業股份有限公司 蝕刻液
DE102022113998A1 (de) * 2022-06-02 2023-12-07 Betek Gmbh & Co. Kg Entschichtungslösung, Verfahren und Vorrichtung zum nasschemischen Entfernen einer PVD- oder CVD-Titannitrid-Schicht von einem Hartmetall-Trägerelement
CN115141629B (zh) * 2022-06-15 2023-06-02 湖北兴福电子材料股份有限公司 TiN去除液
CN115725369B (zh) * 2022-11-03 2024-03-08 上海新阳半导体材料股份有限公司 一种清洗液组合物的应用
CN118185711B (zh) * 2024-02-28 2026-06-26 湖北兴福电子材料股份有限公司 一种铜钴钨兼容性好的TiN去除组合物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0292057A1 (en) * 1987-05-18 1988-11-23 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor comprising a titanium-tungsten layer
US20010003061A1 (en) * 1999-08-30 2001-06-07 Gary Chen Manufacture and cleaning of a semiconductor
JP2006339509A (ja) * 2005-06-03 2006-12-14 Tosoh Corp 金属チタンのエッチング用組成物及びそれを用いたエッチング方法
EP2234145A1 (en) * 2007-12-21 2010-09-29 Wako Pure Chemical Industries, Ltd. Etching agent, etching method and liquid for preparing etching agent
EP2322692A1 (en) * 2008-09-09 2011-05-18 Showa Denko K.K. Etchant for titanium-based metal, tungsten-based metal, titanium-tungsten-based metal or nitrides thereof
WO2013101907A1 (en) * 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209604A (ja) * 1997-01-17 1998-08-07 Hitachi Ltd プリント配線基板の製造方法並びにそれに用いる粗化液及び粗化液の調製方法
CN1169196C (zh) 1997-04-03 2004-09-29 日本电气株式会社 制造半导体器件的方法
JP3039493B2 (ja) 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
US7579308B2 (en) * 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
JP2003339509A (ja) 2002-05-28 2003-12-02 Koji Okuda 縦型ハンガー掛け具
US7399365B2 (en) 2003-04-18 2008-07-15 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
BRPI0413657A (pt) 2003-08-19 2006-10-24 Mallinckrodt Baker Inc Composição aquosa, isenta de silicato, para limpeza de substratos microeletrÈnicos, bem como processo para limpeza de um substrato microeletrÈnico sem produzir qualquer corrosão metálica substancial
CA2544198C (en) * 2003-10-29 2011-07-26 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
JP4474914B2 (ja) * 2003-12-17 2010-06-09 東ソー株式会社 レジスト残渣剥離用組成物及びそれを用いた洗浄方法
MY139624A (en) 2004-03-01 2009-10-30 Avantor Performance Mat Inc Stripping and cleaning compositions for microelectronics
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
SG10201508243UA (en) 2005-10-05 2015-11-27 Entegris Inc Oxidizing aqueous cleaner for the removal of post-etch residues
AU2006340825A1 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US8685909B2 (en) * 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
EP2108039A2 (en) * 2006-12-21 2009-10-14 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR101382700B1 (ko) * 2007-08-22 2014-04-08 다이킨 고교 가부시키가이샤 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー．ケー．シー．テクノロジー．インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
JP5813280B2 (ja) * 2008-03-19 2015-11-17 富士フイルム株式会社 半導体デバイス用洗浄液、および洗浄方法
US7825079B2 (en) * 2008-05-12 2010-11-02 Ekc Technology, Inc. Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture
US8080475B2 (en) 2009-01-23 2011-12-20 Intel Corporation Removal chemistry for selectively etching metal hard mask
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
KR101270560B1 (ko) 2010-11-12 2013-06-03 오씨아이 주식회사 금속막 식각용 조성물
KR20120066950A (ko) * 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법
US9257270B2 (en) 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
US20130200040A1 (en) * 2012-01-04 2013-08-08 International Business Machines Corporation Titanium nitride removal
US8835326B2 (en) 2012-01-04 2014-09-16 International Business Machines Corporation Titanium-nitride removal
US9070625B2 (en) 2012-01-04 2015-06-30 International Business Machines Corporation Selective etch chemistry for gate electrode materials
JP5692108B2 (ja) * 2012-02-03 2015-04-01 日立化成株式会社 半導体実装用導電基材の表面処理方法、ならびにこの処理方法を用いてなる導電基材および半導体パッケージ
US9058976B2 (en) * 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0292057A1 (en) * 1987-05-18 1988-11-23 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor comprising a titanium-tungsten layer
US20010003061A1 (en) * 1999-08-30 2001-06-07 Gary Chen Manufacture and cleaning of a semiconductor
JP2006339509A (ja) * 2005-06-03 2006-12-14 Tosoh Corp 金属チタンのエッチング用組成物及びそれを用いたエッチング方法
EP2234145A1 (en) * 2007-12-21 2010-09-29 Wako Pure Chemical Industries, Ltd. Etching agent, etching method and liquid for preparing etching agent
EP2322692A1 (en) * 2008-09-09 2011-05-18 Showa Denko K.K. Etchant for titanium-based metal, tungsten-based metal, titanium-tungsten-based metal or nitrides thereof
WO2013101907A1 (en) * 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride

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