CN1056377A - 具有整体镇流发射极的冷阴极场发射器件 - Google Patents

具有整体镇流发射极的冷阴极场发射器件 Download PDF

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CN1056377A
CN1056377A CN91100961A CN91100961A CN1056377A CN 1056377 A CN1056377 A CN 1056377A CN 91100961 A CN91100961 A CN 91100961A CN 91100961 A CN91100961 A CN 91100961A CN 1056377 A CN1056377 A CN 1056377A
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emitter
steady resistance
cathode field
field emitting
emitting device
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CN1021608C (zh
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凯恩·罗伯特
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Motorola Solutions Inc
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Motorola Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
    • H01J7/44—One or more circuit elements structurally associated with the tube or lamp
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

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  • Cold Cathode And The Manufacture (AREA)
  • Microwave Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Bipolar Transistors (AREA)

Abstract

一种冷阴极场发射器件包括一镇流电阻(202， 303，402)，它与器件整件形成并与发射极(204，302， 403)耦联以适当补偿由于制造而造成的发射极场发 射的性能变化。

Description

本发明涉及冷阴极场发射器件。
冷阴极场发射器件已是公知技术。一般来说，这类器件至少包括两个电极（一个阴极或叫发射极和一个阳极或叫集电极）或三个电极（前述两个电极及一个栅极）。
人们已提出这类器件的各种结构，其中包括各电极基本上平面配置或非平面配置的器件。不论结构如何，先有技术的场发射器件（FED）通常具有在各发射极尖端出现不均匀的电子发射的缺点，当在一个器件阵列中有多个发射极尖端时，这一问题特别值得注意，这一问题之所以产生部分是由于各发射极尖端的几何尺寸可能同一预定的标准尺寸有很大差别。这些尖端中的某些会成为一总发射极电流中大多数的源，而在某些情况下，由于发射率很高会受到损坏。
因此，需要一个易于制造，成本低和可靠的解决方案。
本发明所公开的冷阴极场发射器件提供了这样一种解决方案，根据本发明，该器件有一与其整体形成的与发射极偶联的镇流电阻。将此电阻元件与各发射极尖端串联能使尖端上的电压随发射电流的增加而按比例上升。此电压升将有效地减少栅极/发射极电位，从而减少发射极表面的增强了的电场。这一过程建立一个平衡和在一这种器件的阵列中就各尖端来说独立的限流功能。
在本发明的一个实施例中，镇流电阻通过选择杂质扩散而形成在一半导体衬底上，杂质扩散可包括亚磷材料。
本发明可用于平面或非平面几何尺寸的器件。
图1是表示根据本发明构成的场发射器件的符号;
图2a-c是表示本发明的基本上非平面的FED制造步骤的侧剖图;
图3是根据本发明制造的基本上平面的FED的一部分的顶视图;
图4是根据本发明制造的基本上非平面的FED的另一实施例的侧剖图。
图1中参考号100表示一个根据本发明的FED的符号。该器件包括一个整体结构，它由一发射极101、一栅极102、一阳极103以及一与发射极耦合的镇流电阻104构成。
下面将参照附图2a-c描述根据本发明的非平面FED的制造过程。首先提供一适当的原始衬底，例如一硅衬底201（图2a），利用本领域人员熟知的适当的半导体制造方法，通过一扩散过程将亚磷材料202（图2b）或其它杂质掺入衬底201的选定部分。通过选择杂质扩散掺入亚磷材料使整体制备的镇流电阻能做在FED上，下面将详细描述。
在图2b中还可看到一初始金属发射极带203，（在另一实施例中，发射极带可通过有选择地直接将适当杂质扩散到衬底中来实现）。
用于完成非平面FED的各种后续处理步骤是本领域公知的，不必在此重复。在图2c中可看到一个完成的非平面FED阵列，其中，各FED包括至少3个电极，即一个发射极204，一个栅极206和一个阳极207，阵列中各FED的发射极204通过一镇流电阻202与一发射极带耦联，镇流电阻由一个具有期望阻抗的镇流电阻构成。
这样的结构使发射极尖端间的不一致性通过与各发射极204串联的镇流电阻202而基本上得到补偿。
现在参照附图3说明根据本发明构成的一基本上为平面形的FED。一硅衬底201提供构造该器件的适当支承介质，通过选择杂质扩散，在衬底201的各部分引入适当的杂质材料，如亚磷材料，以形成镇流电阻303。而后进行金属化过程以淀积一发射极带301以及多个独立的发射极焊块302，在最终完成的器件中，这些焊块将作为发射极的导电区。
如此构造可使由于发射极尖端结构造成的性能变化通过镇流发射极303的作用而在FED中基本上得到补偿，镇流发射极303与FED整体形成在一起。
图4示出了一个基本上非平面的FED的另一实施例。这种构造仍有一个支承衬底，至少一个与发射极带401耦联的发射极403，一栅极404，以及一阴极406，在此实施例中，镇流电阻并未构成支承衬底201的一部分。相反，此实施例的几何结构颠倒过来，其中一后续沉积层构成发射极403，可在沉积层中形成一个镇流电阻402以提供发射极403和发射极带401间的适当的阻性串联耦合。这样将使整体形成的镇流发射极402仍起上面所述的作用。

Claims (9)

1、一种冷阴极场发射器件，具有一发射极204和与之整体形成并与发射极耦联的镇流电阻202。
2、权利要求1的器件，其中发射极通过镇流电阻与一电压源203耦联。
3、权利要求1的器件，其中该器件形成在一半导体衬底201上，镇流电阻至少部分地形成在半导体衬底上。
4、权利要求3的器件，其中镇流电阻至少部分地通过对半导体衬底选择杂质扩散而形成。
5、权利要求4的器件，其中选择杂质扩散使用亚磷材料。
6、权利要求1的器件，其中场发射器件基本上为平面几何形状。
7、权利要求1的器件，其中场发射器件基本上为非平面几何形状。
8、具有多个冷阴极场发射器件的电子器件，各场发射器件有一个发射极和一个与之整体形成并与发射极耦联的镇流电阻。
9、一种形成具有一个与其发射极耦联的镇流电阻的冷阴极场发射器件的方法，包括下列步骤：
a）提供一半导体衬底;
b）通过在至少一部分衬底上选择杂质扩散而形成镇流电阻;
c）在半导体衬底上形成至少一部分冷阴极场发射器件使其发射极与镇流电阻耦联。
CN91100961A 1990-02-09 1991-02-08 冷阴极场发射器件 Expired - Fee Related CN1021608C (zh)

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US07477695 US5142184B1 (en) 1990-02-09 1990-02-09 Cold cathode field emission device with integral emitter ballasting
US477,695 1990-02-09
US477.695 1990-02-09

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CN1021608C CN1021608C (zh) 1993-07-14

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EP (1) EP0514474B1 (zh)
JP (1) JP2711591B2 (zh)
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AT (1) ATE160053T1 (zh)
DE (1) DE69128144T2 (zh)
DK (1) DK0514474T3 (zh)
ES (1) ES2108044T3 (zh)
RU (1) RU2121192C1 (zh)
WO (1) WO1991012624A1 (zh)

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DE69128144T2 (de) 1998-04-09
US5142184A (en) 1992-08-25
RU2121192C1 (ru) 1998-10-27
US5142184B1 (en) 1995-11-21
JPH05504022A (ja) 1993-06-24
WO1991012624A1 (en) 1991-08-22
ES2108044T3 (es) 1997-12-16
EP0514474A4 (en) 1993-01-27
DE69128144D1 (de) 1997-12-11
JP2711591B2 (ja) 1998-02-10
EP0514474A1 (en) 1992-11-25
DK0514474T3 (da) 1998-07-27
CN1021608C (zh) 1993-07-14
EP0514474B1 (en) 1997-11-05
ATE160053T1 (de) 1997-11-15

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