CN105470246B - 固态荧光体集成光源的双通道导热封装结构及封装方法 - Google Patents
固态荧光体集成光源的双通道导热封装结构及封装方法 Download PDFInfo
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- 239000007787 solid Substances 0.000 title claims abstract description 78
- 230000009977 dual effect Effects 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 230000037361 pathway Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012856 packing Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000003292 glue Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000084 colloidal system Substances 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 4
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 4
- 239000012141 concentrate Substances 0.000 claims description 3
- 238000000295 emission spectrum Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 3
- 239000012994 photoredox catalyst Substances 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Abstract
本发明公开一种固态荧光体集成光源的双通道导热封装结构及其封装方法。该光源包括固态荧光体、透明有机硅胶、导热柱体、LED芯片、围坝胶体和基板,LED芯片置于基板之上,在LED芯片外围设有置于基板之上的围坝胶体,在LED芯片排布的空隙内布置有导热柱体,固态荧光体放置于导热柱体之上,在固态荧光体和基板中间的缝隙内填充有透明有机硅胶。本发明利用透明有机硅胶将固态荧光体和LED芯片阻隔开来避免了固态荧光体的热源直接叠加于热源LED芯片上,但由于透明荧光胶是热的不良导体,所以通过导热柱体来完成固态荧光体的大部分导热。双重导热通道的设计将LED光源的两个热源分隔开来充分导热,能有效的降低两者温度提高寿命。
Description
技术领域
本发明涉及一种固态荧光体集成光源,特别涉及一种固态荧光体集成光源的封装结构及封装方法。
背景技术
现有的LED光源一般是使用荧光有机胶体进行封装,这样的封装方式使得荧光粉紧贴LED芯片。在功率较小时问题不大,但随着功率密度增大以后,尤其是采用集成封装的方式时,两个大功率热源会互相叠加。这会导致LED芯片的结温极速升高,而荧光粉和有机胶体也会出现衰减老化甚至出现碳化,从而引发光源发光效率降低寿命减少。
目前固态荧光体集成光源的具体组成包括固态荧光体、透明有机硅胶、LED芯片、围坝胶体和基板。LED芯片置于基板之上,在LED芯片外围设有置于基板之上的围坝胶体,固态荧光体放置于LED芯片之上并通过围坝固定,在固态荧光体和基板中间的缝隙内填充有透明有机硅胶。如此即可利用透明有机硅胶将固态荧光体和LED芯片阻隔开来避免了固态荧光体的热源直接叠加于热源LED芯片上。但是在使用实践中发现,由于透明荧光胶是热的不良导体,导致导热不充分,不能有效降温而提高寿命。
发明内容
本发明要解决的技术问题,在于提供一种固态荧光体集成光源的双通道导热封装结构及封装方法,双重导热通道的设计将LED光源的两个热源分隔开来充分导热,能有效的降低固态荧光体和LED芯片二者温度而提高寿命。
本发明固态荧光体集成光源的双通道导热封装结构的实现方案是:固态荧光体集成光源的双通道导热封装结构,包括固态荧光体、透明有机硅胶、LED芯片、围坝胶体和基板,所述LED芯片和所述围坝胶体设置于所述基板之上,且所述围坝胶体环设于所述LED芯片的外围,其特征在于:还包括固定于所述基板上的导热柱体,且导热柱体避开LED芯片设置;所述固态荧光体放置于该导热柱体之上,且所述固态荧光体的周围还与围坝胶体连接固定,在所述固态荧光体和基板中间的缝隙内填充所述透明有机硅胶。
其中,本发明封装结构可进一步为:
所述固态荧光体的基材为常温下呈现为固体状态的材质,同时该固态荧光体对于400-500nm的可见光或250-400nm的紫外光具有吸收并激发出380-780nm可见光波段光线的荧光效用。
所述固态荧光体的基材为透明陶瓷、玻璃或PC。
所述导热柱体对于380-780nm可见光或250-400nm的紫外光有80%的透过率或高于80%的反射率。
所述导热柱体的导热率高于1.0W/m.K。
当LED芯片为正装芯片时,所述导热柱体的高度为高于或等于LED芯片焊线的线弧最高点;当LED芯片为倒装芯片时,所述导热柱体的高度为高于或等于LED芯片的高度;所述导热柱体的分布优选为多颗均匀分布于正装LED芯片的间隙中;或者所述导热柱体集中少量分布;或者所述倒装LED芯片密集分布。
所述LED芯片的发射光谱为峰值波长在400-500nm的可见光或峰值波长在250-400nm的紫外光。
所述基板对于可见光有高于80%的反射率。
本发明固态荧光体集成光源的双通道导热封装方法的实现方案是:固态荧光体集成光源的双通道导热封装方法,其特征在于:
步骤10、将基板的中间部分裸露出镜面铝的镜面层形成固晶区,基板的外圈部分压有BT(双马来酰亚胺三嗪)树脂层,BT树脂层上设有正负电极及电路;
步骤20、在基板的固晶区内均匀布置上LED芯片,同时在LED芯片排布的空隙内布置导热柱体;
步骤30、在150℃下烘烤2H,待LED芯片和导热柱体与基板完成粘接后进行焊线作业;
步骤40、在固晶区外围使用白色有机硅胶制作一圈闭合的围坝,置于150℃的环境下烘烤30min完成完全固化;
步骤50、完成上述作业后在围坝胶体所形成的杯体内注入适量的透明有机硅胶,再将荧光陶瓷压上并固定;
步骤60、将固定后的荧光陶瓷光源置于温度为60℃,时间为0.5H,或温度为80℃,时间为0.5H,或温度为150℃,时间为1H的条件下进行充分的热固化。
其中,本发明方法可进一步为:
所述步骤40中,固化温度为150℃,固化时间为30min;
所述步骤50具体是:焊线完成后使用点胶方法注入适量的透明有机硅胶,所述透明有机硅胶为AB组分配比后的透明有机硅胶;再使用60℃的温度进行加热,加速有机硅胶的流动,待气泡排出胶水流平后,然后将荧光陶瓷压上并固定;
所述LED芯片为三安的22*35正装芯片,芯片高度为120um;
所述导热柱体为35um×35 um×220um 的氧化铝透明陶瓷柱体。
本发明具有如下优点:本发明利用透明有机硅胶将固态荧光体和LED芯片阻隔开来避免了固态荧光体的热源直接叠加于热源LED芯片上。再通过导热柱体来完成固态荧光体的大部分导热,构成固态荧光体-导热柱-基板的导热通道。双重导热通道的设计将LED光源的两个热源分隔开来充分导热,固态荧光体和LED芯片的热量通过各自通道到达基板,再由基板导到热沉传递到空气中,能有效的降低两者温度提高寿命。
附图说明
下面参照附图结合实施例对本发明作进一步的说明。
图1为本发明固态荧光体集成光源的双通道导热封装的正面结构示意图。
图2为本发明固态荧光体集成光源的双通道导热封装的一实施例的一纵向剖面结构示意图。
图3为本发明固态荧光体集成光源的双通道导热封装的另一实施例的一纵向剖面结构示意图。
具体实施方式
如图1至图3所示,本发明固态荧光体集成光源的双通道导热封装结构包括固态荧光体1、透明有机硅胶2、LED芯片3、围坝胶体4和基板5,还包括固定于所述基板5上的导热柱体6,所述LED芯片3和所述围坝胶体4设置于所述基板5之上,且所述围坝胶体4环设于所述LED芯片3的外围,所述导热柱体6固定于所述基板5上且避开LED芯片3设置;所述固态荧光体1放置于该导热柱体6之上,且所述固态荧光体1的周围还与围坝胶体4连接固定,在所述固态荧光体1和基板5中间的缝隙内填充所述透明有机硅胶2。
其中,所述固态荧光体1的基材为常温下呈现为固体状态的材质,如可以是透明陶瓷、玻璃或PC等,同时该固态荧光体1对于400-500nm的可见光或250-400nm的紫外光具有吸收并激发出380-780nm可见光波段光线的荧光效用。
所述导热柱体6对于380-780nm可见光或250-400nm的紫外光有80%的透过率或高于80%的反射率。所述导热柱体的导热率高于1.0W/m.K。
当LED芯片3为正装芯片时,所述导热柱体6的高度为高于或等于LED芯片3焊线的线弧最高点;当LED芯片3为倒装芯片时,所述导热柱体6的高度为高于或等于LED芯片3的高度。
所述导热柱体6的分布可以多种形式,优选为多颗均匀分布于正装LED芯片3的间隙中;但也可以是所述导热柱体6集中少量分布;或者倒装LED芯片3密集分布。
所述LED芯片3的发射光谱为峰值波长在400-500nm的可见光或峰值波长在250-400nm的紫外光。
所述基板5放置芯片这侧布置有电路,且对于可见光有高于80%的反射率。
本发明固态荧光体集成光源的双通道导热封装方法的实现方案是:固态荧光体集成光源的双通道导热封装方法,其特征在于:
步骤10、将基板的中间部分裸露出镜面铝的镜面层形成固晶区,基板的外圈部分压有BT(双马来酰亚胺三嗪)树脂层,BT树脂层上设有正负电极及电路;
步骤20、在基板的固晶区内均匀布置上LED芯片,同时在LED芯片排布的空隙内布置导热柱体;
步骤30、在150℃下烘烤2H,待LED芯片和导热柱体与基板完成粘接后进行焊线作业;
步骤40、在固晶区外围使用白色有机硅胶制作一圈闭合的围坝,置于150℃的环境下烘烤30min完成完全固化;
步骤50、完成上述作业后在围坝胶体所形成的杯体内注入适量的透明有机硅胶,再将荧光陶瓷压上并固定;具体是:焊线完成后使用点胶方法注入适量的透明有机硅胶,所述透明有机硅胶为AB组分配比后的透明有机硅胶;再使用60℃的温度进行加热,加速有机硅胶的流动,待气泡排出胶水流平后,然后将荧光陶瓷压上并固定;
步骤60、将固定后的荧光陶瓷光源置于温度为60℃,时间为0.5H,或温度为80℃,时间为0.5H,或温度为150℃,时间为1H的条件下进行充分的热固化。
其中, 本实施例中,选用镜面铝COB基板,荧光陶瓷优选为YAG荧光陶瓷;所述LED芯片采用三安的22*35正装芯片,芯片高度为120um;所述导热柱体6为35um×35 um×220um 的氧化铝透明陶瓷柱体。以500W的固态荧光体集成光源为例,可布置如1156颗LED芯片3,120颗透明陶瓷导热柱体6。但均不限于此。
本发明利用透明有机硅胶将固态荧光体和LED芯片阻隔开来避免了固态荧光体的热源直接叠加于热源LED芯片上。再通过导热柱体来完成固态荧光体的大部分导热,构成固态荧光体-导热柱-基板的导热通道。双重导热通道的设计将LED光源的两个热源分隔开来充分导热,固态荧光体和LED芯片的热量通过各自通道到达基板,再由基板导到热沉传递到空气中,能有效的降低两者温度提高寿命。
虽然以上描述了本发明的具体实施方式,但是熟悉本技术领域的技术人员应当理解,我们所描述的具体的实施例只是说明性的,而不是用于对本发明的范围的限定,熟悉本领域的技术人员在依照本发明的精神所作的等效的修饰以及变化,都应当涵盖在本发明的权利要求所保护的范围内。
Claims (15)
1.固态荧光体集成光源的双通道导热封装结构,包括固态荧光体、透明有机硅胶、LED芯片和基板,所述LED芯片设置于所述基板之上,其特征在于:所述双通道导热封装结构还包括固定于所述基板上的导热柱体,且导热柱体避开LED芯片设置;所述固态荧光体放置于该导热柱体之上,且不接触LED芯片;在所述固态荧光体和基板中间的缝隙内填充所述透明有机硅胶。
2.根据权利要求1所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述双通道导热封装结构还包括围坝胶体,所述围坝胶体设置于所述基板之上,且所述围坝胶体环设于所述LED芯片的外围;所述固态荧光体还与围坝胶体连接固定。
3.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述固态荧光体的基材为常温下呈现为固体状态的材质,同时该固态荧光体对于400-500nm的可见光或250-400nm的紫外光具有吸收并激发出380-780nm可见光波段光线的荧光效用。
4.根据权利要求3所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述固态荧光体的基材为透明陶瓷、玻璃或PC。
5.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述导热柱体对于380-780nm可见光或250-400nm的紫外光有80%的透过率或高于80%的反射率。
6.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述导热柱体的导热率高于1.0W/m.K。
7.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:
当LED芯片为正装芯片时,所述导热柱体的高度高于LED芯片焊线的线弧最高点;
当LED芯片为倒装芯片时,所述导热柱体的高度高于LED芯片的高度。
8.根据权利要求7所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:LED芯片为正装芯片时,所述导热柱体的分布为多颗均匀分布于正装芯片的间隙中,或者,所述导热柱体集中少量分布。
9.根据权利要求7所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述倒装LED芯片密集分布。
10.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述基板为金属基板。
11.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述LED芯片的发射光谱为峰值波长在400-500nm的可见光或峰值波长在250-400nm的紫外光。
12.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述基板对于可见光有高于80%的反射率。
13.根据权利要求1或2所述的固态荧光体集成光源的双通道导热封装结构,其特征在于:所述导热柱体为透明导热柱体。
14.固态荧光体集成光源的双通道导热封装方法,其特征在于,该方法包括以下步骤:
步骤10、将基板的中间部分裸露出镜面铝的镜面层形成固晶区,基板的外圈部分压有BT树脂层,BT树脂层上设有正负电极及电路;
步骤20、在基板的固晶区内均匀布置上LED芯片,同时在LED芯片排布的空隙内布置导热柱体;
步骤30、在150℃下烘烤2H,待LED芯片和导热柱体与基板完成粘接后进行焊线作业;
步骤40、在固晶区外围使用白色有机硅胶制作一圈闭合的围坝,置于150℃的环境下烘烤30min完成完全固化;
步骤50、完成上述作业后在围坝胶体所形成的杯体内注入适量的透明有机硅胶,再将荧光陶瓷压上并固定;
步骤60、将固定后的荧光陶瓷光源置于温度为60℃,时间为0.5H,或温度为80℃,时间为0.5H,或温度为150℃,时间为1H的条件下进行充分的热固化。
15.根据权利要求14所述的固态荧光体集成光源的双通道导热封装方法,其特征在于:
所述步骤40中,固化温度为150℃,固化时间为30min;
所述步骤50具体是:焊线完成后使用点胶方法注入适量的透明有机硅胶,所述透明有机硅胶为AB组分配比后的透明有机硅胶;再使用60℃的温度进行加热,加速有机硅胶的流动,待气泡排出胶水流平后,然后将荧光陶瓷压上并固定。
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