CN105429625B - 产生用于信号隔离器的通/断键控载波信号的方法和结构 - Google Patents
产生用于信号隔离器的通/断键控载波信号的方法和结构 Download PDFInfo
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- CN105429625B CN105429625B CN201510581674.XA CN201510581674A CN105429625B CN 105429625 B CN105429625 B CN 105429625B CN 201510581674 A CN201510581674 A CN 201510581674A CN 105429625 B CN105429625 B CN 105429625B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/02—Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation
- H04L27/04—Modulator circuits; Transmitter circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/52—Modulators in which carrier or one sideband is wholly or partially suppressed
- H03C1/60—Modulators in which carrier or one sideband is wholly or partially suppressed with one sideband wholly or partially suppressed
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/0264—Arrangements for coupling to transmission lines
- H04L25/028—Arrangements specific to the transmitter end
- H04L25/0286—Provision of wave shaping within the driver
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/486,937 US9660848B2 (en) | 2014-09-15 | 2014-09-15 | Methods and structures to generate on/off keyed carrier signals for signal isolators |
US14/486,937 | 2014-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105429625A CN105429625A (zh) | 2016-03-23 |
CN105429625B true CN105429625B (zh) | 2020-02-28 |
Family
ID=55455901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510581674.XA Active CN105429625B (zh) | 2014-09-15 | 2015-09-14 | 产生用于信号隔离器的通/断键控载波信号的方法和结构 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9660848B2 (zh) |
CN (1) | CN105429625B (zh) |
Families Citing this family (28)
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US10536309B2 (en) * | 2014-09-15 | 2020-01-14 | Analog Devices, Inc. | Demodulation of on-off-key modulated signals in signal isolator systems |
KR101668158B1 (ko) * | 2014-10-14 | 2016-10-21 | 숭실대학교산학협력단 | 발진기를 이용한 칩 간 무선 전력 전송 장치 |
US9998301B2 (en) | 2014-11-03 | 2018-06-12 | Analog Devices, Inc. | Signal isolator system with protection for common mode transients |
ITUB20153500A1 (it) | 2015-09-09 | 2017-03-09 | St Microelectronics Srl | Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti |
ITUB20156047A1 (it) * | 2015-12-01 | 2017-06-01 | St Microelectronics Srl | Sistema di isolamento galvanico, apparecchiatura e procedimento |
US9673809B1 (en) * | 2016-03-24 | 2017-06-06 | Nxp Usa, Inc. | Replication of a drive signal across a galvanic isolation barrier |
US10199997B2 (en) * | 2016-06-09 | 2019-02-05 | Qualcomm Incorporated | Source-degenerated amplification stage with rail-to-rail output swing |
US9948193B2 (en) | 2016-06-10 | 2018-04-17 | Stmicroelectronics S.R.L. | Galvanically isolated DC-DC converter with bidirectional data transmission |
IT201600088207A1 (it) | 2016-08-30 | 2018-03-02 | St Microelectronics Srl | Circuito di isolamento galvanico, sistema e procedimento corrispondenti |
CN107919866B (zh) * | 2016-10-08 | 2021-08-03 | 北京中科格励微科技有限公司 | 一种数字信号隔离器 |
US10074939B1 (en) * | 2017-08-08 | 2018-09-11 | Allegro Microsystems, Llc | Signal isolator having inductive and capacitive signal coupling |
US11206060B2 (en) | 2017-09-21 | 2021-12-21 | Enphase Energy, Inc. | Apparatus for communicating across an isolation barrier |
IT201800004174A1 (it) * | 2018-04-03 | 2019-10-03 | Circuito e sistema ad isolamento galvanico, procedimento corrispondente | |
US10790782B2 (en) * | 2018-10-12 | 2020-09-29 | Texas Instruments Incorporated | Optocoupler emulating input stage for digital isolators |
CN109831202A (zh) * | 2019-03-07 | 2019-05-31 | 北京中科格励微科技有限公司 | 线性隔离器 |
US11342288B2 (en) | 2019-06-04 | 2022-05-24 | Allegro Microsystems, Llc | Signal isolator having at least one isolation island |
US11029366B2 (en) | 2019-08-13 | 2021-06-08 | Allegro Microsystems, Llc | Ground disconnect detection for multiple voltage domains |
US20210057330A1 (en) * | 2019-08-22 | 2021-02-25 | Allegro Microsystems, Llc | Single chip signal isolator |
US11533027B2 (en) | 2019-10-18 | 2022-12-20 | Analog Devices, Inc. | Low power receiver circuit for isolated data communications |
TWI702780B (zh) | 2019-12-03 | 2020-08-21 | 財團法人工業技術研究院 | 提升共模瞬變抗擾度的隔離器及訊號產生方法 |
US10903792B1 (en) * | 2019-12-31 | 2021-01-26 | Littelfuse, Inc. | Self-oscillating spread spectrum frequency control loop |
US10965382B1 (en) * | 2020-01-09 | 2021-03-30 | Texas Instruments Incorporated | Oscillator for pulse communication with reduced startup latency |
JP7366849B2 (ja) | 2020-07-09 | 2023-10-23 | 株式会社東芝 | 通信装置 |
US11515246B2 (en) | 2020-10-09 | 2022-11-29 | Allegro Microsystems, Llc | Dual circuit digital isolator |
TWI737529B (zh) * | 2020-10-30 | 2021-08-21 | 精拓科技股份有限公司 | 數位隔離器 |
DE102021107212A1 (de) * | 2021-03-23 | 2022-09-29 | Infineon Technologies Ag | Oszillatorschaltung zum Ansteuern eines Übertragers |
CN113395064B (zh) * | 2021-06-30 | 2023-07-21 | 荣湃半导体(上海)有限公司 | 隔离电路系统及其方法 |
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