CN1053993C - 抗反射层及其制造方法 - Google Patents

抗反射层及其制造方法 Download PDF

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Publication number
CN1053993C
CN1053993C CN94105508A CN94105508A CN1053993C CN 1053993 C CN1053993 C CN 1053993C CN 94105508 A CN94105508 A CN 94105508A CN 94105508 A CN94105508 A CN 94105508A CN 1053993 C CN1053993 C CN 1053993C
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CN
China
Prior art keywords
resin
layer
solvent
group
coating
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Expired - Lifetime
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CN94105508A
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English (en)
Chinese (zh)
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CN1115496A (zh
Inventor
朴春根
吕起成
朴正哲
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1115496A publication Critical patent/CN1115496A/zh
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    • H10P76/2043—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
CN94105508A 1993-09-08 1994-05-13 抗反射层及其制造方法 Expired - Lifetime CN1053993C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR18016/93 1993-09-08
KR18016/1993 1993-09-08
KR1019930018016A KR970004447B1 (ko) 1993-09-08 1993-09-08 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
CN1115496A CN1115496A (zh) 1996-01-24
CN1053993C true CN1053993C (zh) 2000-06-28

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ID=19363136

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94105508A Expired - Lifetime CN1053993C (zh) 1993-09-08 1994-05-13 抗反射层及其制造方法

Country Status (7)

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US (2) US5593725A (enExample)
JP (1) JP3440122B2 (enExample)
KR (1) KR970004447B1 (enExample)
CN (1) CN1053993C (enExample)
DE (1) DE4414808B4 (enExample)
FR (1) FR2709869B1 (enExample)
TW (1) TW289766B (enExample)

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CN101095223B (zh) * 2004-09-08 2011-04-20 英特尔公司 制造具有高k栅极介电层和金属栅电极的半导体器件的方法

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US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US6297170B1 (en) 1998-06-23 2001-10-02 Vlsi Technology, Inc. Sacrificial multilayer anti-reflective coating for mos gate formation
US6379872B1 (en) * 1998-08-27 2002-04-30 Micron Technology, Inc. Etching of anti-reflective coatings
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
US6828683B2 (en) * 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
US6110653A (en) 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
CN1658375B (zh) * 1999-08-26 2011-03-30 布鲁尔科技公司 改进的用于双金属镶嵌方法中的填充物料
US20040034134A1 (en) 1999-08-26 2004-02-19 Lamb James E. Crosslinkable fill compositions for uniformly protecting via and contact holes
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
WO2001040865A1 (en) * 1999-11-30 2001-06-07 Brewer Science, Inc. Non-aromatic chromophores for use in polymer anti-reflective coatings
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
KR100365434B1 (ko) * 2000-10-26 2002-12-18 주식회사 하이닉스반도체 웨이퍼 가장자리 부분의 환형 잔유물 제거 방법
KR100503061B1 (ko) * 2002-03-21 2005-07-25 삼성전자주식회사 유기 감광체용 오버코트 형성용 조성물 및 이로부터형성된 오버코트층을 채용한 유기 감광체
JP2003318126A (ja) * 2002-04-25 2003-11-07 Mitsubishi Electric Corp 半導体装置の製造方法
JP2004212946A (ja) * 2002-10-21 2004-07-29 Rohm & Haas Electronic Materials Llc Ｓｉポリマー含有フォトレジスト
US6960419B2 (en) * 2003-12-12 2005-11-01 Kodak Polychrome Graphics Llc Antihalation dye for negative-working printing plates
KR100733920B1 (ko) * 2004-09-17 2007-07-02 주식회사 엘지화학 에칭 레지스트용 잉크 조성물, 이를 이용한 에칭 레지스트패턴 형성 방법 및 미세 유로 형성 방법
US7262138B1 (en) * 2004-10-01 2007-08-28 Advanced Micro Devices, Inc. Organic BARC with adjustable etch rate
SG125214A1 (en) * 2005-02-17 2006-09-29 Agency Science Tech & Res Method of low temperature imprinting process with high pattern transfer yield
US8455178B2 (en) * 2006-09-26 2013-06-04 Rohm And Haas Electronic Materials Llp Coating compositions for photolithography
WO2008038544A1 (fr) * 2006-09-28 2008-04-03 Jsr Corporation Procédé de formation de film de couche inférieure de résist, composition de film de couche inférieure de résist pour une utilisation dans le procédé, et procédé de formation de motif.
US7718529B2 (en) * 2007-07-17 2010-05-18 Globalfoundries Inc. Inverse self-aligned spacer lithography
KR100960463B1 (ko) 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
KR100960464B1 (ko) 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
WO2009119201A1 (ja) * 2008-03-28 2009-10-01 Jsr株式会社 レジスト下層膜及びレジスト下層膜形成用組成物並びにレジスト下層膜形成方法
KR101037842B1 (ko) * 2008-12-31 2011-05-31 덕양산업 주식회사 태양 전지 모듈을 구비한 차량의 인스트루먼트 패널
JP6375669B2 (ja) * 2014-04-03 2018-08-22 株式会社村田製作所 電子部品の製造方法
CN114686057B (zh) * 2020-12-28 2023-06-02 中国科学院微电子研究所 一种图形化用抗反射涂层组合物及图形化方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101095223B (zh) * 2004-09-08 2011-04-20 英特尔公司 制造具有高k栅极介电层和金属栅电极的半导体器件的方法

Also Published As

Publication number Publication date
FR2709869B1 (fr) 1996-02-02
US5593725A (en) 1997-01-14
JP3440122B2 (ja) 2003-08-25
DE4414808B4 (de) 2006-09-07
KR950009969A (ko) 1995-04-26
FR2709869A1 (fr) 1995-03-17
JPH0792684A (ja) 1995-04-07
US5759755A (en) 1998-06-02
DE4414808A1 (de) 1995-03-09
TW289766B (enExample) 1996-11-01
KR970004447B1 (ko) 1997-03-27
CN1115496A (zh) 1996-01-24

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Expiration termination date: 20140513

Granted publication date: 20000628