CN105324830B - 板在室温和较高温度下在支座中的定中 - Google Patents

板在室温和较高温度下在支座中的定中 Download PDF

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Publication number
CN105324830B
CN105324830B CN201480031545.7A CN201480031545A CN105324830B CN 105324830 B CN105324830 B CN 105324830B CN 201480031545 A CN201480031545 A CN 201480031545A CN 105324830 B CN105324830 B CN 105324830B
Authority
CN
China
Prior art keywords
plate
bearing
inner fovea
protuberance
band according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480031545.7A
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English (en)
Chinese (zh)
Other versions
CN105324830A (zh
Inventor
耶格·科什保尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Trading AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading AG Truebbach filed Critical Oerlikon Trading AG Truebbach
Publication of CN105324830A publication Critical patent/CN105324830A/zh
Application granted granted Critical
Publication of CN105324830B publication Critical patent/CN105324830B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Packaging For Recording Disks (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Nozzles (AREA)
  • Coating By Spraying Or Casting (AREA)
CN201480031545.7A 2013-04-08 2014-04-07 板在室温和较高温度下在支座中的定中 Expired - Fee Related CN105324830B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
US61/809,524 2013-04-08
PCT/EP2014/000928 WO2014166621A1 (de) 2013-04-08 2014-04-07 Zentrierung einer platte in einer halterung sowohl bei raum- als auch bei höheren temperaturen

Publications (2)

Publication Number Publication Date
CN105324830A CN105324830A (zh) 2016-02-10
CN105324830B true CN105324830B (zh) 2017-08-01

Family

ID=50486885

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480026375.3A Active CN105210169B (zh) 2013-04-08 2014-04-07 功率兼容性更高的溅射靶
CN201480031545.7A Expired - Fee Related CN105324830B (zh) 2013-04-08 2014-04-07 板在室温和较高温度下在支座中的定中

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201480026375.3A Active CN105210169B (zh) 2013-04-08 2014-04-07 功率兼容性更高的溅射靶

Country Status (21)

Country Link
US (2) US9564300B2 (enExample)
EP (2) EP2984674B1 (enExample)
JP (2) JP6360884B2 (enExample)
KR (2) KR102234454B1 (enExample)
CN (2) CN105210169B (enExample)
AR (2) AR099253A1 (enExample)
BR (2) BR112015025747A2 (enExample)
CA (2) CA2908897C (enExample)
ES (1) ES2675332T3 (enExample)
HK (1) HK1214403A1 (enExample)
HU (1) HUE038784T2 (enExample)
IL (2) IL241980B (enExample)
MX (2) MX350172B (enExample)
MY (2) MY178843A (enExample)
PH (2) PH12015502328B1 (enExample)
PL (1) PL2984674T3 (enExample)
RU (2) RU2665059C2 (enExample)
SG (3) SG10201708186QA (enExample)
TR (1) TR201809526T4 (enExample)
TW (2) TW201443263A (enExample)
WO (2) WO2014166620A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) * 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
US11158491B2 (en) 2017-06-01 2021-10-26 Oerlikon Surface Solutions Ag, Pfäffikon Target assembly for safe and economic evaporation of brittle materials
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
CN110838458B (zh) 2018-08-17 2022-08-09 台湾积体电路制造股份有限公司 半导体制程系统以及方法
SG11202106614UA (en) * 2018-12-20 2021-07-29 Oerlikon Surface Solutions Ag Pfaeffikon Cathodic arc ignition device
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
WO2021115703A1 (en) * 2019-12-13 2021-06-17 Evatec Ag Gas ring for a pvd source

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
CN1153225A (zh) * 1995-09-27 1997-07-02 莱博德材料有限公司 用于真空镀膜设备溅射阴极的靶及其制造方法
EP1106715A1 (en) * 1999-12-10 2001-06-13 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP2003226967A (ja) * 2002-02-05 2003-08-15 Shibaura Mechatronics Corp 成膜装置
JP2010116605A (ja) * 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (enExample) * 1979-10-31 1982-05-29
EP0393344A1 (de) 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
DE69127636T2 (de) * 1991-01-28 1998-01-22 Materials Research Corp Target für kathodenzerstäubung
DE9102052U1 (de) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo Indirekt gekühlter Verdampfer mit Schnellwechselsystem
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
CN1153225A (zh) * 1995-09-27 1997-07-02 莱博德材料有限公司 用于真空镀膜设备溅射阴极的靶及其制造方法
EP1106715A1 (en) * 1999-12-10 2001-06-13 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP2003226967A (ja) * 2002-02-05 2003-08-15 Shibaura Mechatronics Corp 成膜装置
JP2010116605A (ja) * 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法

Also Published As

Publication number Publication date
TW201443263A (zh) 2014-11-16
MX350172B (es) 2017-08-28
RU2015147497A (ru) 2017-05-16
ES2675332T3 (es) 2018-07-10
TR201809526T4 (tr) 2018-07-23
CA2908897A1 (en) 2014-10-16
PH12015502328A1 (en) 2016-02-22
IL241980B (en) 2020-08-31
KR102190319B1 (ko) 2020-12-14
JP6360884B2 (ja) 2018-07-18
JP2016519719A (ja) 2016-07-07
US9536714B2 (en) 2017-01-03
CA2908897C (en) 2023-03-14
CA2908892C (en) 2021-08-24
CA2908892A1 (en) 2014-10-16
JP2016514771A (ja) 2016-05-23
SG11201508311VA (en) 2015-11-27
WO2014166621A1 (de) 2014-10-16
SG10201708186QA (en) 2017-11-29
EP2984673A1 (de) 2016-02-17
AR096021A1 (es) 2015-12-02
JP6655531B2 (ja) 2020-02-26
CN105210169B (zh) 2017-04-19
EP2984674B1 (de) 2018-06-06
WO2014166620A1 (de) 2014-10-16
US9564300B2 (en) 2017-02-07
AR099253A1 (es) 2016-07-13
MY178843A (en) 2020-10-20
KR20150139555A (ko) 2015-12-11
RU2015147496A (ru) 2017-05-16
KR20150139556A (ko) 2015-12-11
PL2984674T3 (pl) 2018-10-31
HK1214403A1 (zh) 2016-07-22
MX2015014210A (es) 2016-05-05
KR102234454B1 (ko) 2021-04-01
SG11201508324VA (en) 2015-11-27
RU2665058C2 (ru) 2018-08-28
BR112015025747A2 (pt) 2017-07-18
PH12015502338A1 (en) 2016-02-22
TW201443258A (zh) 2014-11-16
HK1219562A1 (zh) 2017-04-07
HUE038784T2 (hu) 2018-11-28
EP2984673B1 (de) 2020-03-11
US20160064201A1 (en) 2016-03-03
IL241979B (en) 2020-07-30
PH12015502328B1 (en) 2018-09-26
MY185549A (en) 2021-05-19
CN105324830A (zh) 2016-02-10
MX2015014209A (es) 2016-05-10
US20160071706A1 (en) 2016-03-10
PH12015502338B1 (en) 2016-02-22
RU2665059C2 (ru) 2018-08-28
MX350171B (es) 2017-08-28
CN105210169A (zh) 2015-12-30
BR112015025749A2 (pt) 2017-07-18
EP2984674A1 (de) 2016-02-17

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