CN105308862B - 使用穿玻通孔技术的高通滤波器和低通滤波器及其制造方法 - Google Patents

使用穿玻通孔技术的高通滤波器和低通滤波器及其制造方法 Download PDF

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Publication number
CN105308862B
CN105308862B CN201480030699.4A CN201480030699A CN105308862B CN 105308862 B CN105308862 B CN 105308862B CN 201480030699 A CN201480030699 A CN 201480030699A CN 105308862 B CN105308862 B CN 105308862B
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China
Prior art keywords
filter
capacitor
inductors
coupled
glass substrate
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Expired - Fee Related
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CN201480030699.4A
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English (en)
Chinese (zh)
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CN105308862A (zh
Inventor
C·左
J·金
C·H·尹
D·D·金
M·F·维纶茨
J-H·兰
R·P·米库尔卡
M·M·诺瓦克
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0138—Electrical filters or coupling circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Filters And Equalizers (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Manufacturing & Machinery (AREA)
CN201480030699.4A 2013-05-31 2014-03-25 使用穿玻通孔技术的高通滤波器和低通滤波器及其制造方法 Expired - Fee Related CN105308862B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361829714P 2013-05-31 2013-05-31
US61/829,714 2013-05-31
US14/055,707 2013-10-16
US14/055,707 US9425761B2 (en) 2013-05-31 2013-10-16 High pass filters and low pass filters using through glass via technology
PCT/US2014/031779 WO2014193525A1 (en) 2013-05-31 2014-03-25 High pass filters and low pass filters using through glass via technology and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN105308862A CN105308862A (zh) 2016-02-03
CN105308862B true CN105308862B (zh) 2018-07-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480030699.4A Expired - Fee Related CN105308862B (zh) 2013-05-31 2014-03-25 使用穿玻通孔技术的高通滤波器和低通滤波器及其制造方法

Country Status (6)

Country Link
US (1) US9425761B2 (https=)
EP (1) EP3005559B1 (https=)
JP (1) JP6266765B2 (https=)
KR (1) KR101799425B1 (https=)
CN (1) CN105308862B (https=)
WO (1) WO2014193525A1 (https=)

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US12165809B2 (en) 2016-02-25 2024-12-10 3D Glass Solutions, Inc. 3D capacitor and capacitor array fabricating photoactive substrates
US10026546B2 (en) * 2016-05-20 2018-07-17 Qualcomm Incorported Apparatus with 3D wirewound inductor integrated within a substrate
JP6838328B2 (ja) * 2016-09-15 2021-03-03 大日本印刷株式会社 インダクタおよびインダクタの製造方法
US10510828B2 (en) 2016-10-04 2019-12-17 Nano Henry, Inc. Capacitor with high aspect radio silicon cores
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
US10854946B2 (en) 2017-12-15 2020-12-01 3D Glass Solutions, Inc. Coupled transmission line resonate RF filter
JP7106875B2 (ja) * 2018-01-30 2022-07-27 凸版印刷株式会社 ガラスコアデバイスの製造方法
US10693432B2 (en) * 2018-05-17 2020-06-23 Qualcommm Incorporated Solenoid structure with conductive pillar technology
JP7509035B2 (ja) * 2018-05-24 2024-07-02 Ｔｏｐｐａｎホールディングス株式会社 回路基板
US10433425B1 (en) * 2018-08-01 2019-10-01 Qualcomm Incorporated Three-dimensional high quality passive structure with conductive pillar technology
CN109302161A (zh) * 2018-08-31 2019-02-01 维沃移动通信有限公司 调谐滤波电路和终端设备
EP3648128B1 (en) * 2018-11-02 2024-01-03 Delta Electronics (Shanghai) Co., Ltd. Transformer module and power module
KR20210147040A (ko) 2019-04-05 2021-12-06 3디 글래스 솔루션즈 인코포레이티드 유리 기반의 빈 기판 집적 도파관 디바이스
CN110519913A (zh) * 2019-09-23 2019-11-29 努比亚技术有限公司 一种实现pcb单点接地设计的方法、封装和印刷电路板
JP7608727B2 (ja) * 2020-04-07 2025-01-07 Ｔｏｐｐａｎホールディングス株式会社 高周波フィルタ内蔵ガラスコア配線基板の製造方法
JP2023516817A (ja) * 2020-04-17 2023-04-20 スリーディー グラス ソリューションズ，インク 広帯域誘導
JP7834430B2 (ja) * 2020-09-17 2026-03-24 株式会社村田製作所 インダクタ部品
US11728293B2 (en) * 2021-02-03 2023-08-15 Qualcomm Incorporated Chip modules employing conductive pillars to couple a passive component device to conductive traces in a metallization structure to form a passive component
US12324169B2 (en) 2021-04-23 2025-06-03 Boe Technology Group Co., Ltd. Substrate integrated with passive device and method for manufacturing the same
CN115241163B (zh) * 2021-04-23 2025-03-25 京东方科技集团股份有限公司 可调滤波器及其制备方法
US20220408562A1 (en) * 2021-06-16 2022-12-22 Intel Corporation Integrated rf passive devices on glass
US12424518B2 (en) * 2022-02-28 2025-09-23 Qualcomm Incorporated Capacitor embedded 3D resonator for broadband filter
CN114709054A (zh) * 2022-03-23 2022-07-05 上海艾为电子技术股份有限公司 一种片上电感及其制作方法
WO2023245593A1 (zh) * 2022-06-24 2023-12-28 京东方科技集团股份有限公司 滤波器及其制备方法
CN115765667A (zh) * 2022-11-24 2023-03-07 杭州电子科技大学 一种频率可重构的毫米波高通滤波器结构
WO2024116490A1 (ja) * 2022-11-29 2024-06-06 株式会社村田製作所 電子部品
CN116318003B (zh) * 2022-12-12 2026-01-16 南京国博电子股份有限公司 一种三维混合集成滤波器及其电子装置

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JP2004056097A (ja) * 2002-05-27 2004-02-19 Nec Corp 薄膜キャパシタ、薄膜キャパシタを含む複合受動部品、それらの製造方法およびそれらを内蔵した配線基板
JP4499731B2 (ja) * 2004-07-15 2010-07-07 富士通株式会社 容量素子とその製造方法、及び半導体装置

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Integrated Passives for High-Frequency Applications;XiaoYu Mi;《URL:http://cdn.intechopen.com/pdfs/9635.pdf》;20100401;第249-290页 *

Also Published As

Publication number Publication date
US20140354378A1 (en) 2014-12-04
EP3005559A1 (en) 2016-04-13
CN105308862A (zh) 2016-02-03
JP6266765B2 (ja) 2018-01-24
JP2016527743A (ja) 2016-09-08
KR101799425B1 (ko) 2017-11-20
US9425761B2 (en) 2016-08-23
EP3005559B1 (en) 2017-12-13
KR20160015283A (ko) 2016-02-12
WO2014193525A1 (en) 2014-12-04

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Granted publication date: 20180724