CN105264644B - 硅系基板、半导体装置及半导体装置的制造方法 - Google Patents

硅系基板、半导体装置及半导体装置的制造方法 Download PDF

Info

Publication number
CN105264644B
CN105264644B CN201480031035.XA CN201480031035A CN105264644B CN 105264644 B CN105264644 B CN 105264644B CN 201480031035 A CN201480031035 A CN 201480031035A CN 105264644 B CN105264644 B CN 105264644B
Authority
CN
China
Prior art keywords
impurity concentration
silicon
substrate
silicon substrate
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480031035.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN105264644A (zh
Inventor
鹿内洋志
佐藤宪
后藤博
后藤博一
篠宫胜
土屋庆太郎
萩本和德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Sanken Electric Co Ltd
Publication of CN105264644A publication Critical patent/CN105264644A/zh
Application granted granted Critical
Publication of CN105264644B publication Critical patent/CN105264644B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201480031035.XA 2013-05-31 2014-05-02 硅系基板、半导体装置及半导体装置的制造方法 Active CN105264644B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-116208 2013-05-31
JP2013116208A JP2014236093A (ja) 2013-05-31 2013-05-31 シリコン系基板、半導体装置、及び、半導体装置の製造方法
PCT/JP2014/002405 WO2014192228A1 (ja) 2013-05-31 2014-05-02 シリコン系基板、半導体装置、及び、半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN105264644A CN105264644A (zh) 2016-01-20
CN105264644B true CN105264644B (zh) 2018-07-03

Family

ID=51988283

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480031035.XA Active CN105264644B (zh) 2013-05-31 2014-05-02 硅系基板、半导体装置及半导体装置的制造方法

Country Status (5)

Country Link
US (2) US9673052B2 (https=)
JP (1) JP2014236093A (https=)
CN (1) CN105264644B (https=)
TW (1) TWI569328B (https=)
WO (1) WO2014192228A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5756830B2 (ja) * 2013-05-31 2015-07-29 サンケン電気株式会社 半導体基板、半導体装置、及び、半導体装置の製造方法
CN106463403B (zh) * 2014-06-02 2020-05-05 胜高股份有限公司 硅晶片及其制造方法
US10026816B2 (en) * 2015-03-30 2018-07-17 Infineon Technologies Ag Semiconductor wafer and manufacturing method
CN105762247A (zh) * 2016-03-02 2016-07-13 厦门乾照光电股份有限公司 一种具有复合结构的氮化物缓冲层制作方法
CN105609603A (zh) 2016-03-02 2016-05-25 厦门乾照光电股份有限公司 一种具有复合结构的氮化物缓冲层
CN108780235B (zh) * 2016-03-18 2021-12-14 日本电信电话株式会社 光调制器
EP3731260A4 (en) 2017-12-19 2021-12-22 Sumco Corporation METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
US10644142B2 (en) * 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
JP2020098839A (ja) * 2018-12-17 2020-06-25 信越半導体株式会社 窒化物半導体ウェーハの製造方法および窒化物半導体ウェーハ
CN111863590B (zh) * 2019-04-24 2023-05-16 世界先进积体电路股份有限公司 衬底结构及包含其半导体结构的制造方法
JP6863423B2 (ja) * 2019-08-06 2021-04-21 信越半導体株式会社 電子デバイス用基板およびその製造方法
US11183563B2 (en) * 2019-10-04 2021-11-23 Vanguard International Semiconductor Corporation Substrate structure and method for fabricating semiconductor structure including the substrate structure
JP7173082B2 (ja) * 2020-04-17 2022-11-16 信越半導体株式会社 気相成長用のシリコン単結晶基板、気相成長基板及びこれらの製造方法
JP2022124012A (ja) * 2021-02-15 2022-08-25 カーリットホールディングス株式会社 半導体基板及び窒化物半導体
JP7487726B2 (ja) * 2021-11-30 2024-05-21 信越半導体株式会社 窒化物半導体基板及びその製造方法
JP2024077071A (ja) * 2022-11-28 2024-06-07 信越半導体株式会社 ヘテロエピタキシャル用単結晶シリコン基板、エピタキシャル基板、半導体装置、及び、ヘテロエピタキシャル用単結晶シリコン基板の製造方法。

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174034A (ja) * 1998-12-09 2000-06-23 Furukawa Electric Co Ltd:The ヘテロ接合型窒化物半導体装置
US20020179910A1 (en) * 2001-03-15 2002-12-05 Slater David B. Low temperature formation of backside ohmic contacts for vertical devices
CN1590600A (zh) * 2003-08-28 2005-03-09 日立电线株式会社 Ⅲ－ⅴ族氮化物系半导体衬底及其制造方法
JP2010153817A (ja) * 2008-11-27 2010-07-08 Dowa Electronics Materials Co Ltd 電子デバイス用エピタキシャル基板およびその製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
JP2713310B2 (ja) * 1989-08-24 1998-02-16 富士通株式会社 高強度シリコンウェハの製造方法
JPH0518935A (ja) * 1991-07-11 1993-01-26 Kobe Steel Ltd ダイヤモンド薄膜イオンセンサ
JP3354717B2 (ja) * 1994-06-22 2002-12-09 日清製粉株式会社 麺用粉および麺類
US20040053326A1 (en) * 2001-03-14 2004-03-18 Emmert-Buck Michael R. Transfer microdessection
JP2005101475A (ja) 2003-08-28 2005-04-14 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法
JP4725763B2 (ja) * 2003-11-21 2011-07-13 サンケン電気株式会社 半導体素子形成用板状基体の製造方法
EP1743373B1 (en) * 2004-03-19 2013-05-08 Fairchild Semiconductor Corporation Schottky diode with durable contact on silicon carbide and method of fabrication
JP2007242853A (ja) * 2006-03-08 2007-09-20 Sanken Electric Co Ltd 半導体基体及びこれを使用した半導体装置
JP4528986B2 (ja) * 2006-03-31 2010-08-25 国立大学法人北海道大学 カーボンナノチューブ電界効果トランジスタおよびその製造方法
CN101340784A (zh) * 2007-07-04 2009-01-07 深圳富泰宏精密工业有限公司 电子装置机壳及其制造方法
JP2009034926A (ja) * 2007-08-02 2009-02-19 Sumitomo Electric Ind Ltd 樹脂パターン形成方法
US8293623B2 (en) 2007-09-12 2012-10-23 Showa Denko K.K. Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
US20110089967A1 (en) * 2008-04-21 2011-04-21 Sanghee Kim Mems probe card and manufacturing method thereof
JP5636183B2 (ja) * 2009-11-11 2014-12-03 コバレントマテリアル株式会社 化合物半導体基板
JP5384450B2 (ja) * 2010-09-03 2014-01-08 コバレントマテリアル株式会社 化合物半導体基板
JP5439675B2 (ja) * 2010-09-21 2014-03-12 株式会社シリコンテクノロジー 窒化物半導体形成用基板及び窒化物半導体
US8513703B2 (en) * 2010-10-20 2013-08-20 National Semiconductor Corporation Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
TWI414004B (zh) * 2010-10-25 2013-11-01 國立交通大學 具有氮化鎵層的多層結構基板及其製法
SG11201401800PA (en) * 2011-10-26 2014-09-26 Fujikura Ltd Optical element and mach-zehnder optical waveguide element
JP2013229493A (ja) * 2012-04-26 2013-11-07 Sharp Corp Ｉｉｉ族窒化物半導体積層基板およびｉｉｉ族窒化物半導体電界効果トランジスタ
JP2014022698A (ja) * 2012-07-24 2014-02-03 Dowa Holdings Co Ltd 窒化物半導体成長用Ｓｉ基板およびそれを用いた電子デバイス用エピタキシャル基板およびそれらの製造方法
JP5705179B2 (ja) * 2012-08-15 2015-04-22 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174034A (ja) * 1998-12-09 2000-06-23 Furukawa Electric Co Ltd:The ヘテロ接合型窒化物半導体装置
US20020179910A1 (en) * 2001-03-15 2002-12-05 Slater David B. Low temperature formation of backside ohmic contacts for vertical devices
CN1590600A (zh) * 2003-08-28 2005-03-09 日立电线株式会社 Ⅲ－ⅴ族氮化物系半导体衬底及其制造方法
JP2010153817A (ja) * 2008-11-27 2010-07-08 Dowa Electronics Materials Co Ltd 電子デバイス用エピタキシャル基板およびその製造方法

Also Published As

Publication number Publication date
TW201519315A (zh) 2015-05-16
WO2014192228A1 (ja) 2014-12-04
TWI569328B (zh) 2017-02-01
US9966259B2 (en) 2018-05-08
US20160126099A1 (en) 2016-05-05
US9673052B2 (en) 2017-06-06
US20170236711A1 (en) 2017-08-17
JP2014236093A (ja) 2014-12-15
CN105264644A (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
CN105264644B (zh) 硅系基板、半导体装置及半导体装置的制造方法
JP4954298B2 (ja) 中間層構造を有する厚い窒化物半導体構造、及び厚い窒化物半導体構造を製造する方法
CN108140563B (zh) 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法
JP5520056B2 (ja) 中間層構造を有する窒化物半導体構造、及び中間層構造を有する窒化物半導体構造を製造する方法
JP5818853B2 (ja) ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス
US8901570B2 (en) Epitaxial silicon carbide single crystal substrate and process for producing the same
CN107408511B (zh) 化合物半导体基板
CN110663099B (zh) SiC外延晶片及其制造方法
CN107002282A (zh) 外延碳化硅单晶晶片的制造方法以及外延碳化硅单晶晶片
CN102465343A (zh) 制造GaN基膜的方法
CN102465342B (zh) 制造GaN基膜的方法
CN105247658B (zh) 半导体基板、半导体装置及半导体装置的制造方法
JP5378128B2 (ja) 電子デバイス用エピタキシャル基板およびｉｉｉ族窒化物電子デバイス用エピタキシャル基板
CN105247665A (zh) 半导体装置
KR101517808B1 (ko) 크랙 감소를 위한 실리콘 기판 위 GaN 성장방법
JP2012232884A (ja) 窒化物半導体基板及びその製造方法並びにそれを用いた素子
JP7779251B2 (ja) エピタキシャル基板の製造方法及びエピタキシャル基板
JP6556664B2 (ja) 窒化物半導体基板
TWI884728B (zh) 半導體結構及其製造方法
JP2014192246A (ja) 半導体基板およびそれを用いた半導体素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant