CN105263853B - 具有均匀工作特性的mems数字可变电容器的非对称阵列 - Google Patents

具有均匀工作特性的mems数字可变电容器的非对称阵列 Download PDF

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Publication number
CN105263853B
CN105263853B CN201480032389.6A CN201480032389A CN105263853B CN 105263853 B CN105263853 B CN 105263853B CN 201480032389 A CN201480032389 A CN 201480032389A CN 105263853 B CN105263853 B CN 105263853B
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CN
China
Prior art keywords
trap
mems
polyresistor
coupled
variable capacitor
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Active
Application number
CN201480032389.6A
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English (en)
Chinese (zh)
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CN105263853A (zh
Inventor
罗伯托·彼得勒斯·范·卡普恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
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Cavendish Kinetics Ltd
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Publication of CN105263853A publication Critical patent/CN105263853A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/38—Multiple capacitors, e.g. ganged
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
CN201480032389.6A 2013-06-07 2014-05-30 具有均匀工作特性的mems数字可变电容器的非对称阵列 Active CN105263853B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361832167P 2013-06-07 2013-06-07
US61/832,167 2013-06-07
PCT/US2014/040235 WO2015009360A1 (en) 2013-06-07 2014-05-30 Non-symmetric arrays of mems digital variable capacitor with uniform operating characteristics

Publications (2)

Publication Number Publication Date
CN105263853A CN105263853A (zh) 2016-01-20
CN105263853B true CN105263853B (zh) 2017-03-08

Family

ID=51033537

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480032389.6A Active CN105263853B (zh) 2013-06-07 2014-05-30 具有均匀工作特性的mems数字可变电容器的非对称阵列

Country Status (5)

Country Link
US (1) US10029909B2 (enExample)
EP (1) EP3003964B1 (enExample)
JP (1) JP6396440B2 (enExample)
CN (1) CN105263853B (enExample)
WO (1) WO2015009360A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651170B2 (en) 2017-07-11 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolated wells for resistor devices
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor
MX2022016117A (es) 2020-06-26 2023-04-05 Aprecia Pharmaceuticals LLC Tabletas rapidamente orodispersables que tienen una cavidad interior.
CN112038091B (zh) * 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101310206A (zh) * 2005-11-16 2008-11-19 Idc公司 具有设定和锁存电极的mems开关
US20100127376A1 (en) * 2008-11-25 2010-05-27 Karim Nozad O System and method to provide rf shielding for a mems microphone package
CN101986410A (zh) * 2009-07-28 2011-03-16 索尼公司 分路开关、半导体装置、模块和电子装置
US20110291167A1 (en) * 2010-05-28 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor device
US20120025851A1 (en) * 2010-07-30 2012-02-02 Homeijer Brian D Capacitive sensors
US20120119872A1 (en) * 2008-09-17 2012-05-17 STMicroelectronics Pte Ptd. Heater design for heat-trimmed thin film resistors

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JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
CN100581032C (zh) * 2003-12-01 2010-01-13 音频专用集成电路公司 具有电压泵的麦克风
US7491595B2 (en) * 2005-07-06 2009-02-17 Hewlett-Packard Development Company, L.P. Creating high voltage FETs with low voltage process
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
JP5335914B2 (ja) 2009-06-29 2013-11-06 富士通株式会社 半導体装置およびその製造方法
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
US8878312B2 (en) * 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
KR101937781B1 (ko) * 2011-09-02 2019-01-11 카벤디시 키네틱스, 인크. Ｒｆ ｍｅｍｓ 분리, 직렬 및 션트 dvc, 및 소형 ｍｅｍｓ
US8981861B2 (en) * 2012-06-08 2015-03-17 Hittite Microwave Corporation Injection locked pulsed oscillator
JP2014053529A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 電子装置
US9275991B2 (en) * 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101310206A (zh) * 2005-11-16 2008-11-19 Idc公司 具有设定和锁存电极的mems开关
US20120119872A1 (en) * 2008-09-17 2012-05-17 STMicroelectronics Pte Ptd. Heater design for heat-trimmed thin film resistors
US20100127376A1 (en) * 2008-11-25 2010-05-27 Karim Nozad O System and method to provide rf shielding for a mems microphone package
CN101986410A (zh) * 2009-07-28 2011-03-16 索尼公司 分路开关、半导体装置、模块和电子装置
US20110291167A1 (en) * 2010-05-28 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor device
US20120025851A1 (en) * 2010-07-30 2012-02-02 Homeijer Brian D Capacitive sensors

Also Published As

Publication number Publication date
US20160115014A1 (en) 2016-04-28
JP6396440B2 (ja) 2018-09-26
CN105263853A (zh) 2016-01-20
EP3003964B1 (en) 2021-04-14
EP3003964A1 (en) 2016-04-13
JP2016521919A (ja) 2016-07-25
WO2015009360A1 (en) 2015-01-22
US10029909B2 (en) 2018-07-24

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Effective date of registration: 20220330

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Patentee after: QORVO US, Inc.

Address before: California, USA

Patentee before: CAVENDISH KINETICS, Inc.