JP6396440B2 - マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ） - Google Patents

マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ） Download PDF

Info

Publication number
JP6396440B2
JP6396440B2 JP2016518357A JP2016518357A JP6396440B2 JP 6396440 B2 JP6396440 B2 JP 6396440B2 JP 2016518357 A JP2016518357 A JP 2016518357A JP 2016518357 A JP2016518357 A JP 2016518357A JP 6396440 B2 JP6396440 B2 JP 6396440B2
Authority
JP
Japan
Prior art keywords
well
mems
dvc
polyresistor
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016518357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016521919A (ja
JP2016521919A5 (enExample
Inventor
ロベルトゥス・ペトルス・ファン・カンペン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cavendish Kinetics Inc
Original Assignee
Cavendish Kinetics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cavendish Kinetics Inc filed Critical Cavendish Kinetics Inc
Publication of JP2016521919A publication Critical patent/JP2016521919A/ja
Publication of JP2016521919A5 publication Critical patent/JP2016521919A5/ja
Application granted granted Critical
Publication of JP6396440B2 publication Critical patent/JP6396440B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/38—Multiple capacitors, e.g. ganged
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
JP2016518357A 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ） Expired - Fee Related JP6396440B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361832167P 2013-06-07 2013-06-07
US61/832,167 2013-06-07
PCT/US2014/040235 WO2015009360A1 (en) 2013-06-07 2014-05-30 Non-symmetric arrays of mems digital variable capacitor with uniform operating characteristics

Publications (3)

Publication Number Publication Date
JP2016521919A JP2016521919A (ja) 2016-07-25
JP2016521919A5 JP2016521919A5 (enExample) 2017-06-29
JP6396440B2 true JP6396440B2 (ja) 2018-09-26

Family

ID=51033537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016518357A Expired - Fee Related JP6396440B2 (ja) 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ）

Country Status (5)

Country Link
US (1) US10029909B2 (enExample)
EP (1) EP3003964B1 (enExample)
JP (1) JP6396440B2 (enExample)
CN (1) CN105263853B (enExample)
WO (1) WO2015009360A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651170B2 (en) * 2017-07-11 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolated wells for resistor devices
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor
MX2022016117A (es) 2020-06-26 2023-04-05 Aprecia Pharmaceuticals LLC Tabletas rapidamente orodispersables que tienen una cavidad interior.
CN112038091B (zh) 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
EP1690332A1 (en) * 2003-12-01 2006-08-16 Audioasics A/S Microphone with voltage pump
US7491595B2 (en) * 2005-07-06 2009-02-17 Hewlett-Packard Development Company, L.P. Creating high voltage FETs with low voltage process
JP5123198B2 (ja) * 2005-11-16 2013-01-16 クゥアルコム・メムス・テクノロジーズ・インコーポレイテッド セットおよびラッチ電極を備えたｍｅｍｓスイッチ
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
US8786396B2 (en) * 2008-09-17 2014-07-22 Stmicroelectronics Pte. Ltd. Heater design for heat-trimmed thin film resistors
US7915715B2 (en) * 2008-11-25 2011-03-29 Amkor Technology, Inc. System and method to provide RF shielding for a MEMS microphone package
WO2011001494A1 (ja) * 2009-06-29 2011-01-06 富士通株式会社 半導体装置およびその製造方法
JP5402355B2 (ja) 2009-07-28 2014-01-29 ソニー株式会社 シャントスイッチ、半導体デバイス、モジュールおよび電子機器
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
JP5479227B2 (ja) 2010-05-28 2014-04-23 株式会社東芝 半導体装置
US8776337B2 (en) 2010-07-30 2014-07-15 Hewlett-Packard Development Company, L.P. Methods of forming capacitive sensors
US8878312B2 (en) * 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
EP2751818B1 (en) 2011-09-02 2019-05-08 Cavendish Kinetics Inc. Rf mems isolation, series and shunt dvc, and small mems
US8981861B2 (en) * 2012-06-08 2015-03-17 Hittite Microwave Corporation Injection locked pulsed oscillator
JP2014053529A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 電子装置
US9275991B2 (en) * 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp

Also Published As

Publication number Publication date
US20160115014A1 (en) 2016-04-28
EP3003964A1 (en) 2016-04-13
WO2015009360A1 (en) 2015-01-22
CN105263853A (zh) 2016-01-20
JP2016521919A (ja) 2016-07-25
US10029909B2 (en) 2018-07-24
EP3003964B1 (en) 2021-04-14
CN105263853B (zh) 2017-03-08

Similar Documents

Publication Publication Date Title
US9093287B2 (en) Diode, ESD protection circuit and method of manufacturing the same
US8633509B2 (en) Apparatus and method for transient electrical overstress protection
CN103839941B (zh) 具有集成保护结构的结隔离阻断电压装置及其形成方法
KR101164082B1 (ko) 버티컬 과도전압억제기(ｔｖｓ)와 ｅｍｉ필터의 회로 설계와 제조방법
US8947841B2 (en) Protection systems for integrated circuits and methods of forming the same
US8416543B2 (en) Apparatus and method for electronic circuit protection
US8553380B2 (en) Apparatus and method for electronic circuit protection
JP4959140B2 (ja) 半導体装置
JP6396440B2 (ja) マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ）
CN107086216B (zh) 用于静电放电保护的栅耦合nmos器件
CN105633060B (zh) 集成电路装置及其静电防护装置
JP5603488B2 (ja) 集積回路保護のための装置および方法
US9659717B2 (en) MEMS device with constant capacitance
JP2015153955A (ja) 半導体装置
KR101654848B1 (ko) 전력 모스 소자의 과열을 방지할 수 있는 온도 가변 저항 소자를 포함하는 전자 소자
KR20010023585A (ko) 보호 회로
JP2013135130A (ja) 半導体装置及びその製造方法
JP5401957B2 (ja) 半導体装置およびその製造方法
US8502341B2 (en) Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor device
JP2012119710A (ja) 半導体装置
JPH0368537B2 (enExample)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170522

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170522

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180424

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180807

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180829

R150 Certificate of patent or registration of utility model

Ref document number: 6396440

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees