JP2016521919A5 - - Google Patents

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Publication number
JP2016521919A5
JP2016521919A5 JP2016518357A JP2016518357A JP2016521919A5 JP 2016521919 A5 JP2016521919 A5 JP 2016521919A5 JP 2016518357 A JP2016518357 A JP 2016518357A JP 2016518357 A JP2016518357 A JP 2016518357A JP 2016521919 A5 JP2016521919 A5 JP 2016521919A5
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JP
Japan
Prior art keywords
well
mems
resistor
poly
polyresistor
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Application number
JP2016518357A
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English (en)
Japanese (ja)
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JP6396440B2 (ja
JP2016521919A (ja
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Priority claimed from PCT/US2014/040235 external-priority patent/WO2015009360A1/en
Publication of JP2016521919A publication Critical patent/JP2016521919A/ja
Publication of JP2016521919A5 publication Critical patent/JP2016521919A5/ja
Application granted granted Critical
Publication of JP6396440B2 publication Critical patent/JP6396440B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016518357A 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ） Expired - Fee Related JP6396440B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361832167P 2013-06-07 2013-06-07
US61/832,167 2013-06-07
PCT/US2014/040235 WO2015009360A1 (en) 2013-06-07 2014-05-30 Non-symmetric arrays of mems digital variable capacitor with uniform operating characteristics

Publications (3)

Publication Number Publication Date
JP2016521919A JP2016521919A (ja) 2016-07-25
JP2016521919A5 true JP2016521919A5 (enExample) 2017-06-29
JP6396440B2 JP6396440B2 (ja) 2018-09-26

Family

ID=51033537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016518357A Expired - Fee Related JP6396440B2 (ja) 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ）

Country Status (5)

Country Link
US (1) US10029909B2 (enExample)
EP (1) EP3003964B1 (enExample)
JP (1) JP6396440B2 (enExample)
CN (1) CN105263853B (enExample)
WO (1) WO2015009360A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651170B2 (en) * 2017-07-11 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolated wells for resistor devices
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor
MX2022016117A (es) 2020-06-26 2023-04-05 Aprecia Pharmaceuticals LLC Tabletas rapidamente orodispersables que tienen una cavidad interior.
CN112038091B (zh) 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
EP1690332A1 (en) * 2003-12-01 2006-08-16 Audioasics A/S Microphone with voltage pump
US7491595B2 (en) * 2005-07-06 2009-02-17 Hewlett-Packard Development Company, L.P. Creating high voltage FETs with low voltage process
JP5123198B2 (ja) * 2005-11-16 2013-01-16 クゥアルコム・メムス・テクノロジーズ・インコーポレイテッド セットおよびラッチ電極を備えたｍｅｍｓスイッチ
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
US8786396B2 (en) * 2008-09-17 2014-07-22 Stmicroelectronics Pte. Ltd. Heater design for heat-trimmed thin film resistors
US7915715B2 (en) * 2008-11-25 2011-03-29 Amkor Technology, Inc. System and method to provide RF shielding for a MEMS microphone package
WO2011001494A1 (ja) * 2009-06-29 2011-01-06 富士通株式会社 半導体装置およびその製造方法
JP5402355B2 (ja) 2009-07-28 2014-01-29 ソニー株式会社 シャントスイッチ、半導体デバイス、モジュールおよび電子機器
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
JP5479227B2 (ja) 2010-05-28 2014-04-23 株式会社東芝 半導体装置
US8776337B2 (en) 2010-07-30 2014-07-15 Hewlett-Packard Development Company, L.P. Methods of forming capacitive sensors
US8878312B2 (en) * 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
EP2751818B1 (en) 2011-09-02 2019-05-08 Cavendish Kinetics Inc. Rf mems isolation, series and shunt dvc, and small mems
US8981861B2 (en) * 2012-06-08 2015-03-17 Hittite Microwave Corporation Injection locked pulsed oscillator
JP2014053529A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 電子装置
US9275991B2 (en) * 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp

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