CN1051637A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN1051637A
CN1051637A CN90103246A CN90103246A CN1051637A CN 1051637 A CN1051637 A CN 1051637A CN 90103246 A CN90103246 A CN 90103246A CN 90103246 A CN90103246 A CN 90103246A CN 1051637 A CN1051637 A CN 1051637A
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金晟泰
崔寿汉
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Samsung Electronics Co Ltd
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Abstract

一种半导体装置和它的制造方法。这个半导体 装置包括：一个第一导电层、在第一导电层上组成的 氧化层、在氧化层上组成一个多子层形式的氮化物 层，又在多子层的氮化物层上还有一层氧化物层，最 后是在前面n步所得到的结构上形成第二导电层。 由于多子层的氮化物层的独一无二特性，按照本发明 的半导体装置的电气性能就被改善了。同时按照本 发明的多子层结构的氮化物层可以广泛地应用到很 多半导体器件上。

Description

本发明涉及一种半导体装置和它的制造方法，特别是这样一种半导体装置和它的制造方法，使用来构成存储装置的电容器的电介质层的特性能够得到改善。
随着半导体制造技术的最新进步和扩大它的应用范围，促进了大容量存储装置的发展。特别是在改进DRAM（动态随机存储器）的密度方面一个突出的进展已经达到了，这是用发展由一个单电容和一个单晶体管来构成一个存储单元的方法而得到的。
按照为了增加DRAM的密度存储单元的结构，通常的平板型电容器逐渐发展成一种层叠式电容器和沟槽式电容器，而这种沟槽式电容器已经在一兆位（bit）的DRAM中实际使用。
要作为一种这样高密度存储单元的电容器的电介质层材料，通常的氧化物层已经被一种氮化物/氧化物层及一种氧化物/氮化物/氧化物层（即ONO层）所代替。这种ONO层是层叠形式的，并正在从多种不同的角度进行研究，制造ONO层的过程由图1A到1D来说明，并且这将要在下面用简要措词描述。
首先，在一个电容器衬度上组成一个厚度10至200
Figure 901032468_IMG5
的氧化物层OX1;在氧化物层OX1上面组成一个50～200 厚的氮化物层N，如图1B所示，这是使用低压化学蒸汽喷镀装置（以下叫作“LPCVD”）来完成的;这个氮化物层N要经受厚度为10～200 的氧化，如图1C所示，这样去构成一个第二氧化物层OX2，这即构成了氧化物/氮化物/氧化物结构的一个电介质层I。
在上面所描述的第二氧化物层OX2上，构成一个厚度为500至3000
Figure 901032468_IMG8
的多晶硅来构成一个上部衬底11，于是就完成了一个电容器，如图1D所示。
按照这一通常的电介质层的制造方法，氮化物层具有一个比单纯氧化物层大1.9倍的电介质常数E，但是它有几个缺点，例如结晶缺陷和在层本身中生成的针孔以及由于使用LPCVD装置形成层时由于装置的散布特性而产生的偏移新质扩散。因此即使在供电压下漏电流还是会增加的，这样就使电容器的电气性能降低了。
所以，本发明的目的是提供一个具有多层结构的电介质层，而上面所说的传统性缺点可以被克服掉。
本发明的另外一个目的是提供一个这种电介质层的制造方法，在制造这种电介质层时是有效的。
要到达上述的目的，按照本发明这种电介质层包括：在一个第一导电层上构成的一个氧化物层;构成于氧化物层上的由多个子层组成的氮化物层;以及在这多子层氮化物层上的第二氧化物层，所有上面这些层构成一个氧化物层/多子层的氮化物层/氧化物层结构。
适合于制造出按照本发明这样电介质层的制造方法的特征在于，当于第一导电层上所构成的氧化物层的上面再构成多子层氮化物层时，用自然或人工方法把数个超薄的氮化物层构成于多个氮化物子层之间，这是为了补偿氮化物层的缺点。
本发明的上述目标和其它优点可由参照附图对本发明的详细说明而变得更明显，其中：
图1A至1D说明了制造常规电介质层的过程;图2A至2D说明了按照本发明制造电介质层的过程。
如图2C所示，按照本发明的电介质层I是按这样方法构成的，一个氧化物层OX1构成于第一导电层10之上，第一氮化物层N1，第二氮化物层N2等构成于氧化物层OX1之上，这样就构成了一个多子层的氮化物层MN，且一个第二氧化物层OXZ构成于多子层的氮化物层MN之上，于此就完成了氧化物层OX1/多子层的氮化物层MN/氧化物层OX2结构。
制造按照本发明的电介质层的过程包括四个不同的步骤，每一步都参照图2A至2D分别说明。
第一步是氧化物层OX1构成于第一导电层10之上，更具体地说，这氧化物层OX1是由10至200A厚度构成，是按照图2A所示在作为第一导电层的一个多晶硅或单晶硅层之上的。
第二步是多子层的氮化物层构成于通过第一步得到的结构之上，更明确地说，一个氮化物层是按50至200
Figure 901032468_IMG9
的厚度构成于第一步的氧化物层OX1之上，这是通过使用LPCVD装置把NH3气体加于其上的，以这样的方法即该氮化物层MN应该由多子层组成，而这多子层是通过图2B所示的2至5个子步骤构成的。
进一步说，这多子层的氮化物层MN是按这样方法构成的，即为了补偿氮化物层本身的缺点，数个超薄的氧化物层，厚度小于10
Figure 901032468_IMG10
，在限定时间内用自然或人工方法构成于多个氮化物子层之间，这就是使用LPCVD装置，第一氮化物子层N1构成于在第一导电层10上形成的氧化物层OX1之上，这第一氮化物子层N1的表面在室温下老化而形成一个具有小于10
Figure 901032468_IMG11
厚度的超薄的氧化物层OXI，而第二个氮化物层N2由再次使用LPCVD装置的构成，这样一个循环步骤要重复最少一次或多次。
第三步是，第二个氧化物层OX2构成于通过第二步得到的结构之上，更明确地说明，这第二氧化物层OX2是按15至200A厚度构成，位于多子层氮化物层MN之上，而这氮化物层是通过其前一步得到的，如图2C所示，借此得到具有氧化物层/复合子层氮化物层/氧化物层结构的电介质层。
第四步是最后一步，一个多晶硅层作为第二导电层11，按厚度500至3000 构成于通过前面各步得到的电介质层I之上，于此完成了一个大容器存储装置的一个电容。
在按照本发明的制造过程制造的电介质层中，作为组成部分之一的氮化物层是由多子层构成的，而当这些多子层构成时，超薄的氧化物层是构成于多子层之间，这是用在限定时间内老化每一个子层而得到的。这样就能消除那些当氮化物层是通过单一过程构成时所具的那些缺点，即例如由于LPCVD装置散布特性而在这层本身构成的杂质偏向扩散和针孔这样一些缺点，借此电介质层特性得以改善。
所以，如果包括有多层氮化物的电介质层用于存储单元的电容器中，这种电容器的电气特性与常规电容器相比较就有所改进。此外，漏电流减少到一种数值，与常规电介质层相比小一个数量级，假定电压击穿发生在漏电流为1μA/cm2的情况下，本发明的电介质层占有10%的好处。
本发明的制造过程不仅可以应用到存储装置的板式，叠层式或沟槽式电容器中，也可应用到在电气上可擦除和写入的EEPROM（电气上可擦和编程的只读存储器）的浮栅和调整栅之间的插入件（interpoly）中。
此外，多子层氮化物层也可应用到使用氮化物层的半导体器件中去。

Claims (16)

1、一种半导体装置，包含有一个第一导电层，一个第二导电层，和置放在所述第一和第二导电层之间的一个或多个氧化物层以及一个氮化物层。其特征在于：所述的氮化物层是由多子层组成的。
2、权利要求1中所述的半导体装置，其中所述的氧化物层是成对提供的，而所述多子层形式的氮化物层是位于所述成对氧化物层之间的。
3、权利要求1和2中任何一条所述的半导体装置中，超薄的氧化物层是置于所述氮化物层的多子层之间的。
4、权利要求3中所述的半导体装置中，所述的超薄的氧化层是以小于10 的厚度构成的。
5、权利要求1中所述的半导体装置中，所述的多子层氮化物层是由厚度小于50至200
Figure 901032468_IMG2
来提供的。
6、一种半导体装置的制造方法，包括在一个第一导电层上构成氧化物层的第一步骤;在通过第一步骤而得到的所述氧化物层上由多个子层形式构成一个氮化物层的第二步骤;以及在通过第二步骤得到的所述氮化物层上构成一个第二导电层的第三步骤。
7、权利要求6中所述的半导体装置制备方法，其中所述的第二步骤的氮化物层是由使用LPCVD方法构成的。
8、权利要求6中所述的半导体装置制备方法，其中所述多子层形式的氮化物层是按这样方式构成的，以使得一个第一氮化物子层是由应用一个CPCVD装置构成，而所述的第一氮化物子层的表面作用一个氧化过程，并且一个第二氮化物子层由再次应用一个LPCVD装置形成在所述的表面氧化了的第一氮化物子层上，这样一种过程要至少重复一次或更多次。
9、权利要求8所述的制造半导体装置的方法，在其中所述第一氮化物子层的表面是由在室温下经过某一预定时间期限老化它而被氧化的。
10、权利要求9中所述的制造半导体装置的方法，其中所述的老化预定时间是这样决定的，在此时间内使一个小于10 的厚度的超薄的氧化物层应当构成于所述的氮化物子层上。
11、权利要求6所述的制造半导体装置的方法，其中所述的子层形式的氮敬物层是以厚度上小于50至2000
Figure 901032468_IMG4
提供的。
12、权利要求6中所述的制造半导体装置的方法，所述的多子层形式的氮化物层可应用到板型电容器的电介质层上。
13、权利要求6中所述的制造半导体装置的方法，其中所述的多子层形式氮化物层可应用到叠层式电容器的电质介层中。
14、权利要求6中所述的制造半导体装置的方法，其中所述多子层形式的氮化物层可应用到沟槽型电容器的电介质层中。
15、权利要求6中所述的制造半导体装置的方法，其中所述多子层形式的氮化物层可应用到EEPROM中的插入层。
16、一种制造半导体装置的方法，包括：应用LPCVD装置去构成一个第一氮化物子层的步骤;在一预定时间内在室温下用来使所述第一氮化物子层表面承受氧化的步骤;以及应用一个CPCVD装置去构成一个第二氮化物子层的步骤，这个过程至少重复一次或多次，这样就完成一个多子层形式的氮化物层。
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