CN105051891B - 包含导电底部填充材料的半导体装置及封装以及相关方法 - Google Patents

包含导电底部填充材料的半导体装置及封装以及相关方法 Download PDF

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CN105051891B
CN105051891B CN201480017220.3A CN201480017220A CN105051891B CN 105051891 B CN105051891 B CN 105051891B CN 201480017220 A CN201480017220 A CN 201480017220A CN 105051891 B CN105051891 B CN 105051891B
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conductive
substrate
thin space
bare chip
conductive structure
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CN105051891A (zh
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杰斯皮德·S·甘德席
卢克·G·英格兰德
欧文·R·费伊
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Micron Technology Inc
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Micron Technology Inc
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Abstract

半导体装置及装置封装包含通过多个导电结构而电耦合到衬底的至少一个半导体裸片。所述至少一个半导体裸片可以是多个存储器裸片，且所述衬底可以是逻辑裸片。安置于所述至少一个半导体裸片与所述衬底之间的底部填充材料可包含导热材料。电绝缘材料安置于所述多个导电结构与所述底部填充材料之间。例如用于形成半导体装置封装的将半导体裸片附接到衬底的方法包含使用电绝缘材料来覆盖或涂布将所述半导体裸片电耦合到所述衬底的导电结构的至少外侧表面，及在所述半导体裸片与所述衬底之间安置导热材料。

Description

包含导电底部填充材料的半导体装置及封装以及相关方法
优先权主张
本申请案主张2013年3月27日申请的名称为“包含导电底部填充材料的半导体装置及封装以及相关方法(SEMICONDUCTOR DEVICES AND PACKAGES INCLUDING CONDUCTIVEUNDERFILL MATERIAL AND RELATED METHODS)”的第13/851,788号美国专利申请案的权益。
技术领域
本发明的实施例涉及用于将半导体装置机械及电连接到衬底(例如使用导电底部填充材料来将具有细间距导电结构(例如焊球、金属支柱)的半导体装置连接到衬底或另一半导体装置)的封装技术。
背景技术
在电子工业中存在减小电子装置的组件的大小的趋势。这种大小上的减小可实现成本减小、效率提高及能量需求降低，以及其它益处。半导体装置封装(例如，存储器、处理器、发光二极管(LED)、微机电系统(MEMS)装置封装、其组合)已成为各种大小减小工作的对象。例如，减小由半导体装置封装覆盖的区域的一种方法包含将多个半导体设备彼此堆叠，且使用硅穿孔(TSV)来将多个半导体装置电耦合到下伏衬底。
一些常规半导体装置封装包含导电结构(例如，焊料凸块、铜柱)，其将半导体装置彼此电耦合及/或电耦合到下伏衬底。底部填充材料安置于半导体装置之间的容积中,以将物理稳定性添加到封装且保护导电结构免于环境损害(例如，通过形成防潮层)。尽管可包含添加剂及填充材料以更改底部填充材料的机械、化学及/或热性质，但常规底部填充材料主要是电介质材料(例如，聚合物)。
半导体装置在操作期间产生非所要量的热量。例如，已知逻辑装置(例如，处理器)、动态随机存取存储器(DRAM)装置及互补金氧半导体(CMOS)装置会在操作期间产生显著热量。如果此类装置与其它半导体装置堆叠或由其覆盖，且被囊封、使用盖子来覆盖或两者(例如在包括多个半导体装置的半导体装置封装中)，那么在半导体装置中的一或多者内，热量可滞留，且温度可上升到不可接受的水平。将热量从半导体装置封装中的半导体装置及衬底转移走可改善半导体装置的性能，且可减小对半导体装置造成热致损害的可能。
已知使用包含环氧成分及助焊剂成分的环氧助焊剂以在半导体装置的导电元件与衬底的接合垫之间的电连接的形成期间将氧化物从半导体装置的导电元件(例如，导电结构、焊球)移除。当在形成电连接时或之后，例如通过借助加热的蒸发而移除助焊剂成分。环氧助焊剂的环氧成分可同时或随后被固化，以形成可在结构上加固半导体装置与衬底的接合的固体环氧树脂。然而，环氧树脂的热阻相对较高(即，环氧树脂一般不是良好热导体)，且热量可由热绝缘环氧树脂保留在封装的半导体装置中。此热量可损害半导体装置封装及/或减少半导体装置封装的性能。
已将填充剂添加到底部填充材料以增加通过底部填充材料的热传导。例如，已将陶瓷材料的颗粒用作填充剂以改善通过底部填充材料的热传递。然而，陶瓷填充剂(例如，氮化铝及氮化硼)难以以球形形式生产，且当以薄片形式被采用时，可造成难以实现均匀的、厚度可接受的接合线，且可在保护(例如，钝化)层上穿孔。导电颗粒(例如，金属颗粒)(其可展现比陶瓷颗粒或其它电绝缘颗粒更大的导热性)一般避免作为填充剂，或是以受限浓度使用，以抑制半导体装置封装的邻近导电结构之间的非所要电连通(例如，短路)。
附图说明
图1到7说明一种根据本发明的实施例的将半导体裸片附接到衬底以形成半导体装置封装的方法。
图1到3说明一种根据本发明的实施例的用于使用环氧助焊剂来涂布半导体裸片的细间距导电结构的工艺。
图4说明定位于衬底上方的半导体裸片，其中半导体裸片的经涂布的细间距导电结构与衬底的接合垫对准。
图5说明放置于衬底上的半导体裸片，其中经涂布的细间距导电结构定位于衬底的接合垫上方。
图6说明形成到衬底的导电特征的电连接的细间距导电结构。
图7说明包含安置于半导体裸片与衬底之间的容积中的底部填充材料的半导体装置封装的一部分。
图8是根据本发明的实施例的沿图7的线I-I取得的图7的半导体装置封装的部分的横截面俯视图。
图9是根据本发明的另一实施例的类似于图8的半导体装置封装的一部分的横截面俯视图。
图10是根据本发明的实施例的半导体装置封装的横截面侧视图。
具体实施方式
如文中所使用，参考给定参数的术语“实质上”表示且在所属领域的一般技术人员将了解的程度上涵盖满足了给定参数、性质或条件，同时有较小程度的偏差(例如在可接受制造公差内)。经由实例且无限制，“实质上”满足的参数可为至少约90％满足、至少约95％满足或甚至至少约99％满足。
如文中所使用，任何关系术语(例如“第一”、“第二”、“在上方”、“在上”、“顶部”、“底部”、“垂直”、“横向”等等)是为了清晰及方便理解本发明及附图而使用，且除了上下文另外清晰指示之处之外，不表示或取决于任何特定偏好、定向或顺序。
以下描述提供特定细节，例如材料类型及处理条件，以便提供对本发明的实施例的透彻描述。然而，所属领域的一般技术人员将了解，本发明的实施例可在不采用这些特性细节的情况下实施。当然，本发明的实施例可结合行业中所采用的常规半导体制造技术而实施。另外，下文所提供的描述可能未形成用于制造半导体装置及封装的完整工艺流程。下文所描述的结构无需形成完整半导体装置或封装。在下文仅详细描述理解本发明的实施例所需的工艺动作及结构。形成完整半导体装置、封装及系统的额外动作可通过常规制造技术执行。因此，在文中仅描述理解本发明的实施例所需的方法及半导体装置结构。
在以下详细描述中，对附图进行参考，所述附图形成本发明的一部分，且其中经由说明来展示其中可实施本发明的特定实施例。足够详细地描述这些实施例，以使得所属领域的一般技术人员能够实施本发明。然而，可利用其它实施例，且可在不背离本发明的范围的情况下做出结构、逻辑、方法及组成上的改变。文中所呈现的说明不希望是任何特定系统、装置、结构或封装的真实视图，而仅为经采用以描述本发明的实施例的理想化的表示。文中所呈现的图式无需按照比例绘制。另外，图式之间的共用元件可保留相同数字名称。然而，编号中的任何相似性不表示结构或组件需要在大小、组成、配置或其它性质上相同。
本发明的实施例包含(例如)将半导体裸片电及机械连接到衬底(例如，另一半导体裸片(例如，存储器裸片、逻辑裸片)、印刷电路板、插入器等等)以形成半导体装置封装的方法。所述方法包含使用底部填充材料，其可包含导热及导电填充材料以促进通过底部填充材料的热量转移。使用此底部填充材料可在半导体裸片及衬底中的至少一者中维持足够低的温度，以改善或维持其性能及可靠性。另外，本发明的实施例包含使用此类底部填充材料来形成半导体装置封装的方法。为避免或减少用于将半导体裸片连接到衬底的导电结构(例如，焊料凸块、导电支柱、金属支柱、铜柱)之间的电短路，在将底部填充材料引入半导体裸片与衬底之间的容积中之前，导电结构可至少部分涂布有环氧助焊剂。环氧助焊剂的环氧成分可在导电结构与任何邻近导电底部填充材料之间形成电绝缘屏障。本发明的方法可尤其对将半导体裸片附接到衬底(其中多个细间距导电结构用于形成半导体裸片与衬底之间的电连接)有用。因此，本发明的实施例可实现使用底部填充材料中的导电填充材料(例如，金属填充材料)来实质上增强导热性。
图1到7说明一种将半导体裸片100附接到衬底的方法。参考图1，半导体裸片100可以是常规半导体裸片，其包含(例如)动态随机存取存储器(DRAM)裸片、快闪裸片、逻辑裸片(例如，处理器裸片)、互补金氧半导体(CMOS)裸片等等。因此，本发明的方法不限于任何特定类型的半导体裸片100。半导体裸片100可包含从主要表面突出以用于将半导体裸片100附接及电耦合到衬底的多个导电结构102。经由实例且无限制，导电结构102中的每一者可以是形成于半导体裸片100的对应导电垫104上的导电凸块或支柱，例如焊料凸块(例如，包含银锡合金的凸块)、金属支柱、铜柱、尖端有焊料的金属支柱等等。导电结构102可(例如)跨半导体裸片100的主要表面而布置于所谓的“球栅阵列”(BGA)中。
在一些实施例中，多个导电结构102可以细间距形成。间距是用于描述邻近(例如，重复)特征的大小的概念，且一般被定义为一个特征的宽度加上所述特征与紧邻特征之间的距离。如文中所使用，词组“细间距”是指特征具有相对较小的间距。因此，以细间距形成的导电结构102可以是相对较小导电结构102，且/或彼此相对接近而定位。经由实例且无限制，本发明的导电结构102可具有约1000微米或更小的间距，例如在约40微米与约500微米之间。在一些实施例中，导电结构102可具有在约40微米与约100微米之间的间距。在其它实施例中，可以增大的间距(即，并非细间距)形成多个导电结构102。当然，所列出的间距值仅作为实例而提供，且本发明的实施例可包含高于或低于所列出的值的间距。
如图1中所示，半导体裸片100可由所谓的“拾取及放置”装置的拾取头106(例如)通过真空力固持于半导体裸片100的与导电结构102相对的一侧上。拾取头106可用于将半导体裸片100定位于包含液体环氧助焊剂110的贮槽的液体容器108(例如，所谓的“助焊剂托盘”)上方。液体环氧助焊剂110可包含环氧成分及助焊剂成分。环氧成分可包含(例如)环氧树脂及环氧固化剂。环氧树脂可以是电绝缘材料。助焊剂成分可以是用于在接合工艺期间移除或抑制在导电结构102的表面上形成金属氧化物的化学成分，如所属领域的一般技术人员所知。例如，助焊剂成分可包含羧酸。其它常规成分可包含于液体环氧材料110中，例如胶粘剂成分、增稠剂、催化剂材料、助流剂、助粘剂、染料等等。
环氧助焊剂110可购得或可针对特定应用而被特别配制。在一些实施例中，可作为环氧助焊剂110使用的可购得的材料的实例包含以下：可从德国杜塞尔多夫的汉高公司(Henkel Corporation)购得的部件号FF6000；可从乔治亚州萨沃尼的阿尔法先进材料公司(Alpha Advanced Materials)购得的商标名为STAYCHIPTM PRL 50-5D的材料；可从日本东京的千住金属工业有限公司(Senju Metal Industry Co.,Ltd.)购得的商标名为JPK8的材料；可从北卡罗莱纳州喀里的洛德公司(LORD Corporation)购得的商标名为EXP10067的材料；及都可从伊利诺斯州伊塔斯加的凯斯特公司(Kester,Inc.)购得的商标名为JL-8-22-4及JL8-106-1的材料。
参考图2，拾取头106可经降低以定位导电结构102使其至少部分与液体容器108中的液体环氧助焊剂110接触。液体容器108的深度D(图1)可与导电结构102从半导体裸片100的主要表面延伸的距离L(图1)相关，且与将要涂布导电结构102的液体环氧助焊剂110的所要容积相关。可基于在半导体裸片100与衬底(半导体裸片100将被接合到其)之间的所要接合线厚度而选择导电结构102从半导体裸片100的主要表面延伸的长度L，如下文更详细讨论。在一些实施例中，深度D可小于长度L，以使得半导体裸片100能够被降低(或升高液体容器108)，直到导电结构102接触液体容器108的底部。在其它实施例中，深度D可大于长度L，且半导体裸片100可被降低(或可升高液体容器108)，直到所要量的导电结构102及/或半导体裸片100的主要表面由液体环氧助焊剂110接触。如果深度D大于长度L，那么半导体裸片100可被降低(或可升高液体容器108)，直到在导电结构102的横向外部的半导体裸片100的主要表面接触液体容器108的顶面。
液体容器108中的液体环氧助焊剂110的粘度及粘性可经调整，以使得所要量的液体环氧助焊剂110能够形成于导电结构102且使得导电结构102能够浸渍于液体环氧助焊剂110中，且能够在不陷入液体环氧助焊剂110中的情况下被移除。例如，液体环氧助焊剂110可经加热以减小其粘度或经冷却以增大其粘度。替代地或另外，液体环氧助焊剂110的化学成分可经选择，使得液体环氧助焊剂110展现所要粘度及粘性。另外，可更改导电结构102定位于液体容器108中的时间量，以更改形成于导电结构102上的液体环氧助焊剂110的量。
参考图3，拾取头106可被抬起以从液体容器108移除导电结构102。导电结构102的外表面的至少一部分可由某量的液体环氧助焊剂110覆盖。如图3中所示，每一导电结构102可至少部分由单独量的液体环氧助焊剂110覆盖。在其它实施例中，液体环氧助焊剂110也可在导电结构102之间(例如在导电结构102之间的半导体裸片100的主要表面上)形成，使得单一连续量的液体环氧助焊剂110可覆盖导电结构102中的一者以上或甚至全部。
尽管已参考通过将导电结构102浸入液体容器108中的液体环氧助焊剂110中而使用液体环氧助焊剂110来覆盖导电结构102而描述图1到3，但本发明并非如此受限。例如，在其它实施例中，液体环氧助焊剂110可(例如)通过将液体环氧助焊剂110喷射于导电结构102上方、将液体环氧助焊剂110印刷于导电结构上方或在导电结构102上形成液体环氧材料的任何其它方法而形成于导电结构102上方。
参考图4，在某量的液体环氧助焊剂110形成于导电结构102的至少一部分上之后，半导体裸片100可被定位于衬底112上方，且导电结构102可与衬底112的相应接合垫114对准。衬底112可以是与半导体裸片100物理及电耦合的任何衬底。经由实例且无限制，衬底112可以是印刷电路板(PCB)、插入器、逻辑裸片、处理器裸片、引线框或实质上类似于半导体裸片100的另一半导体裸片。衬底112可包含接合垫114，其在衬底是PCB或任何插入器的情况下可替代地被表征化为端子垫114，被布置于对应于多个导电结构102的图案的图案中。另外，衬底可包含阻焊剂116(例如经配置以抑制焊接材料围绕接合垫114横向流动的电介质材料)。衬底112还可包含其它组件、结构及材料，例如(取决于衬底112的结构及功能且无限制)晶体管、电容器、电介质材料、导电迹线、导电通孔、重分配层、累积层、钝化层等等，如技术领域中已知。
参考图5，半导体裸片100可被放置于衬底112上。导电结构102可被放置于接合垫114上，且通过液体环氧助焊剂110接触接合垫114。如果液体环氧助焊剂110可充分流动，那么半导体裸片100的重量、拾取头106的力或其组合可致使液体环氧助焊剂110流动，且导电结构102中的一或多者可直接接触相应一或多个接合垫114。如图5中所示，在将半导体裸片100放置于衬底112上之后，拾取头106可释放半导体裸片100且被收回。
参考图6，半导体裸片100可通过多个导电结构102电耦合到衬底112，导电结构112可经定位于半导体裸片100与衬底112之间的容积中。经由非限制实例，半导体裸片100可被压向衬底112(如使用表示施力的箭头120所示)，以使得导电结构102物理及电接触接合垫114。在一些实施例中，热量还可被施加到结构以至少部分软化或熔化导电结构102或其部分，从而在导电结构102与接合垫114之间形成接合。当导电结构102被压抵着接合垫114及/或被熔化时，液体环氧助焊剂110可从接合界面流走，且流向导电结构102的外侧表面。因此，导电结构102与接合垫114之间的接合界面可实质上无环氧助焊剂110，使得可在导电结构102与相应接合垫114之间形成直接物理及电接合。另外，液体环氧助焊剂110可沿导电结构102的外侧表面，从焊接掩模116实质上连续延伸到面向容积的半导体裸片100的主要表面，以围绕导电结构102中的每一者形成屏障。
导电结构102与接合垫114之间的物理接合的形成可形成多个机械及电连接，所述连接通过导电结构102从导电垫104延伸且到接合垫114。因此，可通过导电结构102在半导体裸片100与衬底112之间建立还提供机械附接点的电连通路径。
热量可被施加到图6中所说明的结构以至少部分固化液体环氧助焊剂110。热量可诱发化学反应以使环氧树脂成分交联。此交联可硬化及机械强化环氧助焊剂110的环氧成分。另外，环氧助焊剂110的任何挥发性成分(例如助焊剂成分)可在暴露于固化工艺的热量中时至少部分蒸发。归因于助焊剂成分及(可能)其它成分的损耗，环氧助焊剂110可在体积、厚度及质量上缩小。例如，在施加热量及固化环氧助焊剂110之后剩余的环氧助焊剂110的环氧成分可为最初应用于导电结构102时的环氧助焊剂110的约10重量％与约25重量％之间。因此，环氧助焊剂110可通过施加热量而从液体环氧助焊剂110转换成经硬化环氧树脂110A(见图7到9)。
在一些实施例中，例如在所谓的“热压”工艺中，可将热量的至少一部分施加到结构，同时将半导体裸片100压向衬底112。在其它实施例中，可将足够热量施加到结构以在所谓的“回焊”工艺中熔化或软化导电结构102或其部分，所述工艺可涉及在比热压工艺更长的时间量内施加热量。回焊工艺可结合或不结合朝向衬底112对半导体裸片100施力(由箭头120指示)而执行。在一些实施例中，可在半导体裸片100被压向衬底112之后施加额外热量(热压工艺及/或回焊工艺)，以更完全固化环氧助焊剂110且以蒸发其助焊剂成分的至少一部分。取决于(例如)所选环氧助焊剂110的特定化学成分，所属领域的一般技术人员将能够选择足以固化环氧助焊剂110的特定温度及时间量。
参考图7，在导电结构102接合到接合垫114且环氧助焊剂110经固化变为环氧树脂110A之后，可将底部填充材料130安置于半导体裸片100与衬底112之间的容积中且邻近导电结构102。可使用常规技术(例如)通过接近半导体裸片100的一或多个边缘分配液体底部填充材料130且允许毛细力将底部填充材料130吸入容积中来将底部填充材料130引入容积中。在一些实施例中，可通过施加大于大气压力的压力以迫使底部填充材料130进入容积中或通过施加经减小的压力(例如真空)以吸取容积外的任何气体(例如空气)及吸取底部填充材料130进入容积中而辅助此毛细管作用及减少孔隙的形成。底部填充材料130可至少实质上填充半导体裸片100与衬底112之间的容积，且邻近且横向围绕导电结构102。沿导电结构102的外侧表面的环氧树脂110A可在导电结构102与底部填充材料130之间形成物理及绝缘(例如，电介质)屏障。环氧树脂110A可横向囊封导电结构102，通过介入底部填充材料130而实质上减少或甚至防止导电结构102之间的短路的可能。环氧树脂110A还可将机械支撑提供到导电结构102，且将机械强度提供给半导体裸片100与衬底112之间的连接。
底部填充材料130可包含聚合物基质及导热材料(即，填充材料)，其可呈颗粒的形式。如文中所使用，术语“导热材料”表示且涵盖展现至少比基质材料(导热材料在其中分散)的导热性更大的导热性的材料。与不具有此导热材料的底部填充材料比较，导热材料可用于改善通过底部填充材料130的热传递。展现相对较高导热性的许多材料(例如，金属)也是导电的。因此，在一些实施例中，底部填充材料130的导热材料可以是或包含金属或另一材料的导电颗粒。
底部填充材料130的聚合物基质可以是或包含(例如)环氧材料、硅酮材料、改质硅酮材料或丙烯酸脂材料。经由实例且无限制，导热材料可以是金属或金属合金材料。经由另一实例，导热材料可包含银、金、铜、锡、铟、铅、铝、其合金、焊接合金及其组合中的至少一者。底部填充材料130的导热材料可呈任何形状的颗粒的形式。例如，导热材料的颗粒可呈球体、薄片、纤维或不规则形状的形式。颗粒中的每一者的表面可以是平滑或粗糙的。导热材料的量在固化之前可至少为底部填充材料130的约50重量％。在一些实施例中，导热材料的量可在底部填充材料130的约60重量％与约95重量％之间。在一些实施例中，导热材料的量可在底部填充材料130的约75重量％与约90重量％之间。在特定实施例中，导热材料的量可以是底部填充材料130的约86重量％。此高负载量的导热材料可大体上致使底部填充材料130(整体上)是导电以及导热的。然而，导电结构102与底部填充材料130之间的由环氧树脂110A形成的电绝缘屏障可允许将此导电底部填充材料130用于包含细间距导电结构102的半导体装置封装。因此，环氧树脂110A可允许实现使用十分导热的底部填充材料130，而没有针对其导电性的限制。
为促进底部填充材料130(包含导热材料)流入半导体裸片100与衬底112之间的容积中，导热材料的颗粒的平均直径可约为接合线厚度的三分之一或更少。接合线厚度可由跨半导体裸片100与衬底(不包含导电结构102)之间的体积的最短垂直距离界定。换句话说，接合线厚度等于半导体裸片100与衬底112之间的底部填充材料130的薄膜厚度。经由实例且无限制，半导体裸片100与衬底之间的接合线厚度可在约10微米与约100微米之间，例如在约20微米与约30微米之间。导热材料的颗粒的大小可实质上小于接合线厚度，以防止桥接及损坏接合线并且防止横向囊封导电结构102的环氧树脂110A的机械应力诱发穿孔。因此，在一些实施例中，导热材料的最大粒度(例如直径)可约为30微米或更小，例如小于约20微米、小于约3微米或甚至小于约1微米。其中接合线的深度为约20微米与约30微米之间，最大粒度可小于约3微米。在一些实施例中，导热材料的最大粒度可在约500纳米与约25微米之间。
包含导热材料的底部填充材料130可在市场上采购或可针对特定应用而特别配制。在一些实施例中，可用作底部填充材料130的可购得的材料的实例包含以下：商标名为EN-4920T_U-5677-011(具有丙烯酸脂基质及银粉填充剂，银粉填充剂构成材料的约86重量％)及EN-4620K(具有环氧基质及银粉填充剂，银粉填充剂构成材料的约75重量％与约95重量％之间)的材料，两者都可从日本东京的日立化学有限公司(Hitachi Chemical Co.,Ltd.)购得；商标名为MT-315及MT-141(各自具有环氧基质及银填充剂，银填充剂构成材料的约75重量％与约80重量％之间)的材料，两者都可从北卡罗莱纳州喀里的洛德公司(LORDCorporation)购得；商标名为H20S(具有环氧基质及银片填充剂)及H20S-D(具有环氧基质及银片填充剂，银片填充剂构成材料的约60重量％与约75重量％之间)的材料，两者都可从马萨诸塞州比勒利卡的环氧树脂技术公司(EpoxyTechnology,Inc.)购得；商标名为84-1LMISR4(具有环氧基质及银填充剂)的材料，其可通过德国杜塞尔多夫的汉高公司(Henkel Corporation)的品牌购得；商标名为260C(具有环氧基质及铜及锡合金填充剂，铜及锡合金填充剂构成材料的约86重量％)的材料，其可从加州圣地亚哥的奥美特电路公司(Ormet Circuits,Inc.)购得；商标名为DA-6534(具有改质硅酮基质及银片填充剂，银片填充剂构成材料的约60重量％)的材料，其可从密歇根州米德兰的道康宁公司(Dow Corning Corporation)购得；商标名为X-23-7835-5(具有硅酮基质及铟填充剂)的材料，其可从日本东京的信越化学有限公司(Shin-EtsuChemical Co.,Ltd).购得；及商标名为APS1E(具有环氧基质及铜及焊接填充剂，铜及焊接填充剂构成材料的约80重量％与约90重量％之间)的材料，其可从新泽西州莫里斯镇的霍尼韦尔国际公司(Honeywell International Inc.)购得。
经由实例且无限制，尽管底部填充材料的聚合物基质可展现相对较低导热性(例如约1.3W/mK)，但所选底部填充材料130(整体上)可展现高达(例如)约300.0W/mK的导热性。在一些实施例中，底部填充材料130可展现至少约1.0W/mK的导热性，例如在约10.0W/mK与约30.0W/mK之间。在一些实施例中，底部填充材料130可展现在约10W/mK与约200.0W/mK之间的导热性。在一些实施例中，底部填充材料130可以是常规地用于填充组件(例如半导体装置)与散热器之间的界面中的间隙的热界面材料(“TIM”)。
导电材料(例如TIM)并未常规地用作底部填充材料，特别是在具有如文中所描述的所述结构的细间距导电结构102的半导体装置封装中，这是因为其导电性将具有致使导电结构102通过底部填充材料而非所要地彼此电连通(即，形成电连接)的较高可能性，如上文所描述。然而，如上文所提及，沿本发明的导电结构102的外侧表面由环氧树脂110A形成的电绝缘屏障允许实现使用与非导电及/或不包含导电填充材料的底部填充材料相比的也高度导热的导电底部填充材料130。
在底部填充材料130安置于半导体裸片100与衬底112之间的容积中之后，底部填充材料130可被固化(例如凝固)。取决于所使用的底部填充材料130的类型，底部填充材料130可通过(例如)施加热量或暴露于辐射(例如紫外线辐射)中而固化。在一些实施例中，底部填充材料130的固化可使得底部填充材料130的聚合物基质化学键接到环氧树脂110A。如果存在，那么此类化学键接可抑制底部填充材料130与环氧树脂110A之间的界面处的孔隙及/或应力集中点的形成。
因此，本发明包含将半导体裸片附接到衬底的方法。根据此类方法，半导体裸片可使用多个细间距导电结构来电耦合到衬底。多个细间距导电结构中的每一细间距导电结构的至少外侧表面可由电绝缘材料覆盖。导热材料可安置于半导体裸片与衬底之间。导热材料可包含多个导热颗粒及聚合物基质。
另外，本发明包含形成半导体装置封装的方法。根据此类方法，半导体装置的多个细间距导电结构可至少部分涂布有电绝缘材料。多个细间距导电结构可电耦合到衬底的对应多个接合垫。底部填充材料可安置于半导体装置与衬底之间的容积中。底部填充材料可具有分散于其中的多个导热颗粒。
参考图8，展示沿图7的线I-I穿过半导体裸片100与衬底112之间的容积取得的图7的结构的横截面俯视图。如图8中所示，在一些实施例中，多个导电结构102中的每一导电结构102可具有沿其外侧表面的相异量的环氧树脂110A。底部填充材料130可安置于衬底112上方(包含在多个导电结构102的紧邻导电结构102之间)。
参考图9，展示类似于图8的视图的横截面俯视图，不过多个导电结构102中的一个以上导电结构102可具有围绕其外侧表面的共同量的环氧树脂110A。因此，底部填充材料130可能不安置于多个导电结构102中的至少一些紧邻导电结构102之间。
在额外实施例中，单一连续量的环氧树脂110A可覆盖导电结构102中的一者以上，但可能不完全填充半导体裸片100(图7)与衬底112之间及紧邻导电结构102之间的容积。在此情况下，导电结构102中的一者以上可由单一连续量的环氧树脂110A覆盖，但一些底部填充材料130仍可安置于紧邻导电结构102之间的未填充容积中。
参考图10，说明半导体装置封装200，其包含被堆叠且通过第一多个导电结构202(其可具有细间距)电耦合的多个半导体存储器(例如DRAM)裸片201A到201H。多个半导体存储器裸片201A到201H可堆叠于半导体逻辑裸片212上方。半导体逻辑裸片212可以是处理器，例如专用集成电路(ASIC)处理器或中央处理单元(CPU)处理器。半导体存储器裸片201A到201H可通过第二多个导电结构202(其可具有细间距)而电耦合到半导体逻辑裸片212。半导体逻辑裸片212可通过(例如)第三多个导电结构224(其可具有细间距，尽管第三多个导电结构224的间距可大于第一多个导电结构202及第二多个导电结构202的间距)而电耦合到印刷电路板(PCB)222。PCB 222可包含第四多个导电结构226以将PCB 222电耦合到更高层级衬底，例如母板。第四多个导电结构226也可具有细间距，尽管第四多个导电结构226的间距可大于第一多个导电结构202及第二多个导电结构202及/或第三多个导电结构224的相应间距。在一些实施例中，第四多个导电结构226可能不具有细间距。
散热器228(例如铜板)可定位于半导体存储器裸片201A到201H的堆叠上方以从半导体存储器裸片201A到201H及半导体逻辑裸片212抽走热量。热界面材料(TIM)232可安置于顶部半导体存储器裸片201H与散热器228之间以改善其间的热传递。
经配制为上文所描述或其它导电配方的底部填充材料130中的一者以提供所要导热性的底部填充材料230可安置于半导体裸片之间(例如在半导体存储器裸片201A到201H中的任何者与半导体逻辑裸片212之间)、半导体裸片与衬底之间(例如在半导体逻辑裸片212与PCB 222之间)及在衬底与更高层级衬底之间(例如在PCB 222与母板之间)的容积中的任何者或全部中。如上文所解释，底部填充材料230可包含也可以是导电材料的导热材料，使得底部填充材料230整体上可以是导电的。在底部填充材料230安置于其中的任何容积中，对应导电结构202、224及/或226的至少外侧表面可由电绝缘材料210(例如，环氧树脂)覆盖，如上文参考环氧助焊剂110及环氧树脂110A所描述。尽管第二多个导电结构202、第三多个导电结构224及/或第四多个导电结构226的外侧表面可替代地或额外由电绝缘材料210覆盖，但为简单起见，电绝缘材料210在图10中被展示为仅覆盖第一多个导电结构202。
在一些实施例中，半导体存储器裸片201A到201H中的每一者之间的容积可填充有底部填充材料230(包含导电及导热材料)。另外，更低半导体存储器裸片201A与半导体逻辑裸片212之间的容积可填充有底部填充材料230。将半导体存储器裸片201A到201H彼此电耦合且电耦合到半导体逻辑裸片212的导电结构202中的每一者的外侧表面可由电绝缘材料210覆盖。因此，可减小半导体裸片(包含半导体逻辑裸片212及半导体存储器裸片201A到201H)的堆叠的整体热阻，且半导体装置封装200的组件(例如半导体存储器裸片201A到201H及半导体逻辑裸片212)的操作温度可比不包含底部填充材料230(其包含导电及导热材料)的半导体装置封装更低。因此，与常规半导体装置封装相比，底部填充材料230可通过使得半导体装置封装200能够在更低裸片温度中操作而改善半导体装置封装200的性能、刷新率及可靠性。
因此，本发明包含半导体装置，所述装置包含衬底及通过多个细间距导电结构而电耦合到衬底的至少一个半导体裸片。底部填充材料可安置于衬底与至少一个半导体裸片之间的容积中且邻近多个细间距导电结构。底部填充材料可包括导热材料。半导体装置还可包含安置于多个细间距导电结构与底部填充材料之间的电绝缘材料。
另外，本发明包含半导体装置封装，所述装置封装包含半导体逻辑裸片及堆叠于半导体逻辑裸片上方的多个半导体存储器裸片。多个导电结构可将多个半导体存储器裸片及半导体逻辑裸片中的邻近裸片彼此电耦合。电绝缘材料可覆盖多个导电结构中的每一导电结构的外侧表面。导热及导电材料可安置于半导体逻辑裸片及多个半导体存储器裸片中的邻近裸片之间的聚合物基质中。
上文所描述及附图中所说明的本发明的实施例不限制本发明的范围，这是由于这些实施例仅为本发明的实施例的实例。本发明由所附权利要求书及其合法等效物定义。任何等效实施例处在本发明的范围内。当然，除了文中所示及所描述的所述修改之外，所属领域的一般技术人员将从描述明白本发明的多种修改，例如所描述的元件的替代性的有用组合。此类修改及实施例也处在所附权利要求书及其合法等效物的范围内。

Claims (16)

1.一种半导体装置，所述装置包括：
衬底；
至少一个半导体裸片，其通过多个细间距导电结构而电耦合到所述衬底，所述多个细间距导电结构直接接触所述至少一个半导体裸片的导电垫和所述衬底的接合垫；
导热及导电底部填充材料，其安置于所述衬底与所述至少一个半导体裸片之间的容积中且位于所述多个细间距导电结构中的紧邻细间距导电结构的外部，所述导热及导电底部填充材料包含基质中的导热及导电颗粒并直接接触所述衬底或所述至少一个半导体裸片中的至少一者的表面；以及
离散量的单一电绝缘材料，其直接安置于所述多个细间距导电结构的每一细间距导电结构之间并直接与所述多个细间距导电结构的每一细间距导电结构接触，所述离散量的所述单一电绝缘材料填充所述多个细间距导电结构中的紧邻细间距导电结构之间的共同容积，所述导热及导电底部填充材料位于所述共同容积外部的所述衬底与所述至少一个半导体裸片之间。
2.根据权利要求1所述的半导体装置，其中所述衬底包括逻辑裸片或类似于所述至少一个半导体裸片的另一半导体裸片中的一者。
3.根据权利要求1所述的半导体装置，其中所述离散量的所述单一电绝缘材料包括环氧材料。
4.根据权利要求1所述的半导体装置，其中所述导热及导电底部填充材料展现在10.0W/mK与200.0W/mK之间的导热性。
5.根据权利要求1所述的半导体装置，其中所述单一电绝缘材料的所述共同容积包含环氧树脂并经化学键接到所述导热及导电底部填充材料。
6.根据权利要求1所述的半导体装置，其中所述导热及导电颗粒具有所述至少一个半导体裸片与所述衬底之间的所述容积的厚度的三分之一或更小的平均直径。
7.根据权利要求1所述的半导体装置，其中所述多个细间距导电结构以1000微米或更小的间距定位。
8.根据权利要求1所述的半导体装置，其中所述离散量的所述单一电绝缘材料横向囊封所述多个细间距导电结构中的每一细间距导电结构。
9.根据权利要求1所述的半导体装置，其中所述至少一个半导体裸片包括堆叠于所述衬底上方的多个半导体裸片。
10.根据权利要求1所述的半导体装置，其中所述导热及导电材料包含多个导电颗粒，所述多个导电颗粒选自由铟、铅、铝或其合金所组成的组中。
11.一种将半导体裸片附接到衬底的方法，所述方法包括：
将半导体裸片的多个细间距导电结构直接电耦合到衬底的对应接合垫；
使用单一电绝缘材料来覆盖所述多个细间距导电结构中的每一细间距导电结构的外侧表面，并使用所述单一电绝缘材料来填充所述多个细间距导电结构中的相邻细间距导电结构之间的共同容积；以及
将包含基质中的导热及导电颗粒的导热及导电材料安置于所述半导体裸片与所述衬底的表面之间以在容积中形成导热及导电底部填充材料，所述导热及导电底部填充材料直接接触所述半导体裸片与所述衬底，且邻近所述多个细间距导电结构，所述导热及导电材料位于所述共同容积外部的容积中的所述半导体裸片与所述衬底的所述表面之间。
12.根据权利要求11所述的方法，其中使用单一电绝缘材料来覆盖所述多个细间距导电结构中的每一细间距导电结构的外侧表面包括：
使用环氧助焊剂来覆盖每一细间距导电结构的所述外侧表面；以及
固化所述环氧助焊剂。
13.根据权利要求12所述的方法，其中固化所述环氧助焊剂包括将热量施加到所述环氧助焊剂，以固化其环氧成分及蒸发其助焊剂成分的至少一部分。
14.根据权利要求11所述的方法，其中将半导体裸片的多个细间距导电结构直接电耦合到衬底的对应接合垫包括将所述半导体裸片热压接合到所述衬底和使所述多个细间距导电结构在一段时间内经受温度以至少部分熔化及回焊所述细间距导电结构的材料中的至少一者。
15.根据权利要求11所述的方法，进一步包括选择所述导热及导电材料以包含所述多个导热及导电颗粒的至少50重量％。
16.根据权利要求11所述的方法，进一步包括选择所述导热及导电材料以包括具有30微米或更小的最大粒度的所述多个导热及导电颗粒。
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