CN1738042A - 集成电路结构及其形成方法 - Google Patents

集成电路结构及其形成方法 Download PDF

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CN1738042A
CN1738042A CNA2005100684327A CN200510068432A CN1738042A CN 1738042 A CN1738042 A CN 1738042A CN A2005100684327 A CNA2005100684327 A CN A2005100684327A CN 200510068432 A CN200510068432 A CN 200510068432A CN 1738042 A CN1738042 A CN 1738042A
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connector
carrier
compressible membrane
integrated circuit
circuit structure
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CN100399560C (zh
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威廉·E·伯尼尔
郑天人
玛丽·S·科尔
戴维·E·艾什塔德
姆科塔·G·法卢克
约翰·A·菲茨西蒙斯
路易斯·S·古德曼
约翰·U·克尼克尔伯克
塔沙·E·洛佩斯
戴维·J·威尔士
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Ultratech Corp
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Abstract

所公开的是形成集成电路结构的方法，该方法在器件上形成焊料连接器，将可压缩薄膜围绕所述焊料连接器的侧面，将所述器件连接到载体上(其中所述焊料连接器将所述器件电连接到所述载体上)，并用绝缘材料填充所述载体和所述器件之间的间隙。

Description

集成电路结构及其形成方法
技术领域
本发明总体上涉及器件和载体之间的连接器，并且尤其涉及由可压缩材料围绕的连接器，该可压缩材料防止材料从器件上剥离。
背景技术
如集成电路芯片之类的器件经常连接到载体上，该载体含有与集成电路芯片的布线。该集成电路芯片能够用导电的铅焊料连接到该载体上。这些铅连接器在载体和/或集成电路芯片上通常形成球。该载体和集成电路芯片通常受热，以使焊料熔化，此后允许该结构冷却从而使焊料固化。这个过程描述成“回流”过程，并且它将铅焊料连接焊接到载体和集成电路芯片上。
绝缘的底填料(underfill material)经常用于填充到位于器件和载体之间的剩余空间中。通过吸收由半导体器件与陶瓷载体或有机载体之间的热膨胀系数差所导致的某些应力，该底填料帮助延长了焊料互连(Interconnection)的疲劳寿命。
尽管含铅焊料已经使用了数十年，并由于广泛的应用而具有较高的产量和可靠性，但世界范围内的立法和环境的关系已经导致极大关注无铅焊料的发展和使用。SnAgCu是这种无铅焊料中的一种，通常称为SAC，它是被认为是含铅焊料连接替代品的其中一种主要合金。该SAC合金(具有各种含量的Ag和Cu，但是通常的范围在3-4％的Ag和0.5-1％的Cu)具有数种优点，其中包括较低的熔点、良好的疲劳寿命及与普通无铅焊料的兼容性。因此，SAC是半导体器件和集成电路芯片载体之间的无铅互连的主要选择物。
无铅焊料使用中的一个缺点是，在回流之后，它们的主要组份往往会具有较大的体积膨胀(例如，3％)。不幸地是，无铅焊料的这种体积膨胀能够迫使底填料远离焊料连接，这防止当焊料冷却回其初始体积时，底填料能够保持对焊料的支承。结果，回流后的这种较大体积膨胀阻止了某些无铅焊料用于需要底填料的陶瓷载体或有机载体。
发明内容
所公开的是形成集成电路结构的方法，该方法在器件上形成无铅连接器，用可压缩薄膜围绕该无铅连接器，将该器件连接到载体上(该无铅连接器将该器件与载体电连接)，并用绝缘底填料将载体和器件之间的间隙填满。
通过加热至熔化然后冷却可以将该连接器回流。在此，实施例的某些特征是，该可压缩薄膜具有高于无铅连接器的熔点，并且该可压缩薄膜具有足够的可压缩性，以便当不损伤底填料的情况下，适应无铅连接熔化时的膨胀。同时，在该可压缩薄膜没有完全围绕所有无铅连接定位的情况下，用可压缩薄膜围绕该无铅连接器的过程能够在载体和器件之间将可压缩薄膜形成图案。这种图案能够例如形成器件和载体之间的通道，其中这些通道用底填料填满，或者该图案能够包括可压缩薄膜的对角条纹(diagonal stripe)。
在可压缩薄膜围绕(或部分围绕)无铅连接器、并且绝缘底填料填满载体与器件之间的间隙的情况下，所得到的结构使得该器件通过无铅连接器连接到载体上。
当结合下面的描述和附图考虑时，此处各实施例的这些和其它方面将得到更好的认识和理解。然而，应当理解的是，尽管指出了本发明的实施例及其数个具体细节，但是下面的描述是为了说明而不是限制。在不脱离其精神的情况下，可以在本发明的范围内作出许多改变和修改，并且本发明包括所有这些修改。
附图说明
从下面参照附图的详细描述中，本发明将得到更好的理解，其中：
附图1是部分完成的器件和载体结构的示意性剖视图；
附图2是部分完成的器件和载体结构的示意性剖视图；
附图3是部分完成的器件和载体结构的示意性剖视图；
附图4是部分完成的器件和载体结构的示意性剖视图；
附图5是部分完成的器件和载体结构的示意性剖视图；
附图6是部分完成的器件和载体结构的示意性剖视图；
附图7是连接结构的示意性剖视图；
附图8是可压缩材料的一种图案的示意性顶视图；
附图9是可压缩材料的一种图案的示意性顶视图；
附图10是可压缩材料的一种图案的示意性顶视图；
附图11是一图表，示出了最大压力的减小量与不同厚度的可压缩材料的压缩模量之间的关系；
附图12是一流程图，说明了一个实施例。
具体实施方式
本发明及其各种特征和有利细节将参照非限制性实施例进行更为完全地解释，这些非限制性实施例在附图中进行了说明，并在下面的描述中进行了详述。应当注意到，附图中所说明的特征不必按比例绘制。已知部件和处理技术的描述进行了省略，从而不必混淆本发明。此处所使用的例子仅仅打算有助于理解本发明所实现的方法，和打算进一步使本领域技术人员能够实现本发明。因此，不应当将这些例子看作是对本发明范围的限制。
此处的各实施例使用围绕该器件至载体连接的可压缩薄膜，以提供无铅焊料(例如，SAC合金)能够膨胀(在它到达底填料之前)的体积，从而允许底填料即使在数次热偏移(excursion)之后也能忍受该“扰动(bump)”。结果是，在不会招致无铅焊料体积膨胀的负面影响的情况下，无铅焊料能够以它们所有的优点进行使用。
更为特别的是，如附图1所示，一个实施例在器件10上形成无铅连接器12。物品10能够包括将与任何类型的载体相连接的任何类型的器件。例如，物品10可能包括其中具有功能部件的集成电路芯片。可选的是，如果连接器12首先形成在载体上，物品10能够代表该载体。连接器12是任何类型的导电连接器，该连接器在回流之后承受体积膨胀。例如，该连接器12能够包括无铅焊料，如上述的SAC合金。
如附图2所示，在该实施例中，可压缩材料20围绕连接器12的侧面形成。在一个例子中，该可压缩材料20能够设置在附图2中所示的水平上。可选的是，可以设置另外的可压缩材料，并且该结构可以被向下平面化(planarized down)至附图2中所示的水平。一个特征是，连接器12的顶部暴露，从而当它连接到载体上时，能够形成与载体的电连接。
该可压缩材料20可以是任何可压缩的材料，如可压缩的硅橡胶、聚酰亚胺泡沫，或其它任何材料，该其它任何材料在连接器12的熔点(例如，260℃)之上是热稳定的，并且对于每个连接器12的膨胀都具有期望范围内的膨胀系数。一个特征是，该可压缩薄膜20具有足够的可压缩性，以在连接器不损伤底填料的情况下熔化时容许连接器12的膨胀。
在附图3中，用光刻技术形成掩模30，并且在附图4中，该可压缩材料20形成图案。该形成图案的过程可以是任何普通材料的去除过程，如蚀刻、激光加工和其它类似的方法。也可能使用光敏的或对电子束敏感的可压缩材料20，这将避免使用掩模30。在附图8至10中示出了可压缩材料20可以加工成的某些可能图案，这些可能图案将在下面更加详细地讨论。
在附图1至4中，该可压缩材料20在连接器12回流成球形之前形成。然而，可以在连接器12回流成球形之后，涂覆该可压缩材料20，如附图5所示。还要注意的是，附图5说明了，在某些实施例中，该可压缩材料20不需要达到连接器12的顶部。相反，从只沿着连接器12的侧面的一部分使用可压缩材料20中可以看出某些设计的益处。
在连接器12用可压缩材料20围绕之后，该器件连接到载体60上，如附图6所示。该连接器12将器件10电连接到载体60上。然后，设置绝缘底填料62，以填充载体60和器件10之间的间隙。在所得到的结构中，在可压缩材料20围绕(或部分围绕)连接器12，并且绝缘底填料62填满载体60和器件10之间的间隙的情况下，器件10通过连接器12连接到载体60上。
附图7以横剖面的形式说明了其中一个连接器12、围绕的可压缩薄膜20和一部分底填料60。附图7说明了，连接器12受热时能够膨胀，并且在受热(回流)之后，它如何可以永久膨胀。注意，附图7不是按比例绘制。在附图7中，线74说明了连接器12在受热之前的尺寸，线70代表连接器12处于液体或熔化状态(当它受热时)时的尺寸，并且线72代表连接器12在回流过程之后的尺寸。该可压缩材料20压缩，以适应连接器12的尺寸变化，这就避免了底填料62的变形。这允许底填料62在不考虑连接器12的膨胀的情况下，保持与可压缩材料20、器件10和载体60的连接。进而，该可压缩材料20将允许进一步适应在其它下游高温过程(插件组装、返修等)期间的体积膨胀。通过该可压缩材料20的创造性使用，底填料62将能够提供器件和载体之间所需要的结构连接。
如附图6所示，该可压缩材料20在载体60和器件10之间形成图案。附图8至10所示的图案允许底填料62更容易填充载体60和器件10之间的所有空间。注意，附图8至10说明了该可压缩材料20的某些示范性图案，并且本发明不严格局限于这些例子。在附图8中，该可压缩材料20围绕球形或球面形导体连接器12形成薄膜。在附图9中，该可压缩材料20加工成方形或矩形图案，从而形成允许底填料62可以注入的通道90。该图案能够包括例如该可压缩薄膜的对角条纹，如附图10所示。该可压缩材料20的图案的一个特征是，它为底填料62留有充足的空间，以在器件10和载体60之间形成良好的结构连接。注意，尽管这些例子示出所有连接器12上都具有可压缩薄膜20，但是在其它实施例中，该可压缩薄膜20并不(less than)围绕所有连接器12定位。
所使用的可压缩薄膜20的组成将根据具体设计中所需要的压缩量改变。另外，该可压缩薄膜20的厚度也将根据所需的压缩量改变。附图11是一图表，示出了最大压力下的减小和不同厚度的不同可压缩材料的压缩模量之间的关系。该图表的左侧说明了弹性体的范围，而该图表的中央说明了聚亚胺酯、聚砜、尼龙等的范围。另外，曲线代表该可压缩材料的不同厚度(例如5、6和7毫英寸)。这些曲线说明，随着该可压缩材料制造得越薄，它肯定越软，以产生相同程度的压力压缩。
如上所述，该可压缩材料不需要完全围绕连接器12的侧面。只盖住球高的一部分对于焊剂残渣清除具有重要的优点，并且有利于底填料流到狭窄的通道中。然而，蓄压将随着整个连接器球12的膨胀而较大，但是只有其高度的一部分能够容纳多余的体积。例如，如果该可压缩材料到达球高的三分之二，那么压力将会比可压缩材料盖住连接器12的整个侧面的情况高50％。于是，所使用的具体材料和厚度将根据每个设计、随着盖住的连接器的侧面的量而改变。
附图12以流程图的形式示出了一实施例。在附图12中，该实施例的步骤120形成可以在器件上膨胀的连接器。在步骤122中，该实施例用可压缩薄膜围绕连接器。接下来，在步骤124中，该实施例将器件连接到载体上(该连接器将器件电连接到载体上)。在步骤126中，该实施例用绝缘底填料填充载体和器件之间的间隙。
如上所示，此处各实施例使用围绕器件直至连接器的可压缩薄膜，以形成连接器能够在其中膨胀(在它接触底填料之前)的体积，从而允许底填料即使在数个热偏移(excursion)之后，也能支承器件和载体。结果是，在不会招致连接器体积膨胀的负面影响的情况下，无铅焊料(和在加热之后承受意外膨胀的其他连接器材料)能够以它们所有的优点进行使用。
尽管本发明已经在优选实施例方面进行了描述，但是本领域技术人员将认识到，本发明可以在所附权利要求的精神和范围中进行修改。

Claims (28)

1.一种集成电路结构，包括：
载体；
连接到所述载体上的器件；
将所述器件与所述载体电连接的焊料连接器；
围绕所述焊料连接器的侧面的可压缩薄膜；
填充所述载体和所述器件之间间隙的绝缘材料。
2.根据权利要求1所述的集成电路结构，其特征在于，所述可压缩薄膜在所述焊料连接器的熔点以上是稳定的。
3.根据权利要求1所述的集成电路结构，其特征在于，所述可压缩薄膜具有足够的可压缩性，以便适应所述焊料连接在熔化时的膨胀而不损伤所述绝缘材料。
4.根据权利要求1所述的集成电路结构，其特征在于，所述可压缩薄膜在所述载体和所述器件之间形成图案。
5.根据权利要求4所述的集成电路结构，其特征在于，所述图案在所述器件和所述载体之间具有通道，其中所述通道由所述绝缘材料填满。
6.根据权利要求4所述的集成电路结构，其特征在于，所述图案包括所述可压缩薄膜的对角条纹。
7.根据权利要求4所述的集成电路结构，其特征在于，所述图案包括由所述可压缩薄膜形成的矩形。
8.一种集成电路结构，包括：
载体；
连接到所述载体上的器件；
将所述器件与所述载体电连接的无铅连接器；
围绕所述无铅连接器的侧面的可压缩薄膜；及
填充所述载体和所述器件之间间隙的绝缘底填料。
9.根据权利要求8所述的集成电路结构，其特征在于，所述可压缩薄膜在所述焊料连接器的熔点以上是稳定的。
10.根据权利要求8所述的集成电路结构，其特征在于，所述可压缩薄膜具有足够的可压缩性，以便适应所述无铅连接器在熔化时的膨胀，而不损伤所述底填料。
11.根据权利要求8所述的集成电路结构，其特征在于，所述可压缩薄膜在所述载体和所述器件之间形成图案。
12.根据权利要求11所述的集成电路结构，其特征在于，所述图案在所述器件和所述载体之间具有通道，其中所述通道由所述底填料填满。
13.根据权利要求11所述的集成电路结构，其特征在于，所述图案包括所述可压缩薄膜的对角条纹。
14.根据权利要求11所述的集成电路结构，其特征在于，所述图案包括由所述可压缩薄膜形成的矩形。
15.一种形成集成电路结构的方法，所述方法包括：
在器件上形成焊料连接器；
以可压缩薄膜围绕所述焊料连接器的侧面；
将所述器件连接到载体上，其中所述焊料连接器将所述器件电连接到所述载体上；及
用绝缘材料填充所述载体和所述器件之间的间隙。
16.根据权利要求15所述的方法，还包括熔化所述焊料连接器，其中所述可压缩薄膜在所述焊料连接器的熔点以上是稳定的。
17.根据权利要求15所述的方法，还包括熔化所述焊料连接器，其中所述可压缩薄膜具有足够的可压缩性，以便适应所述焊料连接器熔化时的膨胀，而不损伤所述绝缘材料。
18.根据权利要求15所述的方法，其特征在于，用所述可压缩薄膜围绕所述焊料连接器的侧面的所述过程将所述可压缩薄膜在所述载体和所述器件之间形成图案。
19.根据权利要求18所述的方法，其特征在于，所述图案在所述器件和所述载体之间具有通道，其中所述通道填满了所述绝缘材料。
20.根据权利要求18所述的方法，其特征在于，所述图案包括所述可压缩材料的对角条纹。
21.根据权利要求15所述的方法，其特征在于，用所述可压缩薄膜围绕所述焊料连接器的侧面的所述过程将所述可压缩薄膜定位成部分地沿所述焊料连接器侧面向上。
22.一种形成集成电路结构的方法，所述方法包括：
在器件上形成无铅连接器；
用可压缩薄膜围绕所述无铅连接器的侧面；
将所述器件连接到载体上，其中所述无铅连接器将所述器件电连接到所述载体上；及
用绝缘底填料填充所述载体和所述器件之间的间隙。
23.根据权利要求22所述的方法，还包括熔化所述焊料连接器，其中所述可压缩薄膜在所述焊料连接器的熔点之上是稳定的。
24.根据权利要求22所述的方法，还包括熔化所述无铅连接器，其中，所述可压缩薄膜具有足够的可压缩性，以便适应所述无铅连接器熔化时的膨胀，而不损伤所述底填料。
25.根据权利要求22所述的方法，其特征在于，用所述可压缩薄膜围绕所述无铅连接器侧面的所述过程将所述可压缩薄膜在所述载体和所述器件之间形成图案。
26.根据权利要求25所述的方法，其特征在于，所述图案在所述器件和所述载体之间具有通道，其中所述通道被所述底填料填满。
27.根据权利要求25所述的方法，其特征在于，所述图案包括所述可压缩薄膜的对角条纹。
28.根据权利要求22所述的方法，其特征在于，用所述可压缩薄膜围绕所述焊料连接器侧面的所述过程将所述可压缩薄膜定位成部分地沿所述焊料连接器的侧面向上。
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US7332821B2 (en) 2008-02-19
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