CN105009297B - 用于金属氧化物半导体薄膜晶体管的介电薄膜的针孔评估方法 - Google Patents

用于金属氧化物半导体薄膜晶体管的介电薄膜的针孔评估方法 Download PDF

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Publication number
CN105009297B
CN105009297B CN201480011873.0A CN201480011873A CN105009297B CN 105009297 B CN105009297 B CN 105009297B CN 201480011873 A CN201480011873 A CN 201480011873A CN 105009297 B CN105009297 B CN 105009297B
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active layer
layer
dielectric layer
thickness
substrate
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Chinese (zh)
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CN105009297A (zh
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任东吉
元泰景
S-M·赵
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201480011873.0A 2013-03-12 2014-03-06 用于金属氧化物半导体薄膜晶体管的介电薄膜的针孔评估方法 Expired - Fee Related CN105009297B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778223P 2013-03-12 2013-03-12
US61/778,223 2013-03-12
PCT/US2014/021086 WO2014158955A1 (en) 2013-03-12 2014-03-06 Pinhole evaluation method of dielectric films for metal oxide semiconductor tft

Publications (2)

Publication Number Publication Date
CN105009297A CN105009297A (zh) 2015-10-28
CN105009297B true CN105009297B (zh) 2019-06-14

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CN201480011873.0A Expired - Fee Related CN105009297B (zh) 2013-03-12 2014-03-06 用于金属氧化物半导体薄膜晶体管的介电薄膜的针孔评估方法

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Country Link
US (1) US9245809B2 (https=)
JP (1) JP2016514372A (https=)
KR (1) KR101757400B1 (https=)
CN (1) CN105009297B (https=)
TW (1) TWI567997B (https=)
WO (1) WO2014158955A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052367B2 (ja) * 2018-01-18 2022-04-12 株式会社デンソー 半導体装置の製造方法
CN111599707A (zh) * 2020-05-27 2020-08-28 广州粤芯半导体技术有限公司 钝化层微裂纹的检测方法
JP2024027384A (ja) * 2022-08-17 2024-03-01 住友電気工業株式会社 受光素子の製造方法
WO2025258264A1 (ja) * 2024-06-10 2025-12-18 株式会社ジャパンディスプレイ 積層構造体、薄膜トランジスタ、および電子機器

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JPS63115331A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp ピンホールの検査方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH07283282A (ja) * 1994-04-08 1995-10-27 Sony Corp 絶縁膜の欠陥検出方法
JP2004221379A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 絶縁膜の評価方法
JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
CN101548367A (zh) * 2006-12-05 2009-09-30 佳能株式会社 使用碱性蚀刻剂溶液蚀刻非晶半导体氧化物
CN102110625A (zh) * 2009-12-24 2011-06-29 中芯国际集成电路制造(上海)有限公司 一种针孔类生长缺陷的检测方法

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JPS6057225B2 (ja) * 1980-04-26 1985-12-13 三菱電機株式会社 半導体装置の試験方法
JPS60140729A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd 半導体素子膜の欠陥検査方法
JP2807679B2 (ja) * 1988-07-08 1998-10-08 住友シチックス株式会社 シリコン基板の絶縁膜欠陥検出方法
JPH05226367A (ja) * 1992-02-14 1993-09-03 Fuji Xerox Co Ltd 半導体素子の製造方法
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JPH0831898A (ja) * 1994-07-18 1996-02-02 Hitachi Ltd 半導体ウエハの酸化膜評価方法
JPH1022283A (ja) * 1996-07-05 1998-01-23 Nippon Steel Corp 半導体装置の製造方法
JP3685678B2 (ja) * 2000-03-21 2005-08-24 沖電気工業株式会社 半導体ウエハの評価方法
US6440870B1 (en) * 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US7524744B2 (en) * 2003-02-19 2009-04-28 Shin-Etsu Handotai Co., Ltd. Method of producing SOI wafer and SOI wafer
US20050029226A1 (en) * 2003-08-07 2005-02-10 Advanced Power Technology, Inc. Plasma etching using dibromomethane addition
US6949481B1 (en) 2003-12-09 2005-09-27 Fasl, Llc Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
JP5330739B2 (ja) * 2007-06-29 2013-10-30 ユー・ディー・シー アイルランド リミテッド 有機ｅｌ表示装置およびその製造方法
US20090001360A1 (en) * 2007-06-29 2009-01-01 Masaya Nakayama Organic el display and method for producing the same
KR101412761B1 (ko) 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
KR20140002616A (ko) 2010-08-20 2014-01-08 어플라이드 머티어리얼스, 인코포레이티드 수소 미함유 실리콘 함유 유전체막을 형성하기 위한 방법들
JP6104817B2 (ja) 2010-12-30 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを用いた薄膜堆積

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63115331A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp ピンホールの検査方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH07283282A (ja) * 1994-04-08 1995-10-27 Sony Corp 絶縁膜の欠陥検出方法
JP2004221379A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 絶縁膜の評価方法
JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
CN101548367A (zh) * 2006-12-05 2009-09-30 佳能株式会社 使用碱性蚀刻剂溶液蚀刻非晶半导体氧化物
CN102110625A (zh) * 2009-12-24 2011-06-29 中芯国际集成电路制造(上海)有限公司 一种针孔类生长缺陷的检测方法

Also Published As

Publication number Publication date
WO2014158955A1 (en) 2014-10-02
KR101757400B1 (ko) 2017-07-12
KR20150127144A (ko) 2015-11-16
US20140273312A1 (en) 2014-09-18
JP2016514372A (ja) 2016-05-19
TW201507166A (zh) 2015-02-16
CN105009297A (zh) 2015-10-28
TWI567997B (zh) 2017-01-21
US9245809B2 (en) 2016-01-26

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Granted publication date: 20190614