JPH0559578B2 - - Google Patents

Info

Publication number
JPH0559578B2
JPH0559578B2 JP57191911A JP19191182A JPH0559578B2 JP H0559578 B2 JPH0559578 B2 JP H0559578B2 JP 57191911 A JP57191911 A JP 57191911A JP 19191182 A JP19191182 A JP 19191182A JP H0559578 B2 JPH0559578 B2 JP H0559578B2
Authority
JP
Japan
Prior art keywords
etched
silicon
etching
conductive material
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57191911A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5982730A (ja
Inventor
Masahiro Shibagaki
Tooru Watanabe
Yukimasa Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57191911A priority Critical patent/JPS5982730A/ja
Publication of JPS5982730A publication Critical patent/JPS5982730A/ja
Publication of JPH0559578B2 publication Critical patent/JPH0559578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP57191911A 1982-11-02 1982-11-02 プラズマエツチング方法 Granted JPS5982730A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57191911A JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57191911A JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Publications (2)

Publication Number Publication Date
JPS5982730A JPS5982730A (ja) 1984-05-12
JPH0559578B2 true JPH0559578B2 (https=) 1993-08-31

Family

ID=16282493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57191911A Granted JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Country Status (1)

Country Link
JP (1) JPS5982730A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
CN110931356B (zh) * 2018-09-19 2023-06-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134738A (en) * 1980-03-26 1981-10-21 Toshiba Corp Method of forming pattern
US4343677A (en) * 1981-03-23 1982-08-10 Bell Telephone Laboratories, Incorporated Method for patterning films using reactive ion etching thereof

Also Published As

Publication number Publication date
JPS5982730A (ja) 1984-05-12

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