JPS56134738A - Method of forming pattern - Google Patents
Method of forming patternInfo
- Publication number
- JPS56134738A JPS56134738A JP3757080A JP3757080A JPS56134738A JP S56134738 A JPS56134738 A JP S56134738A JP 3757080 A JP3757080 A JP 3757080A JP 3757080 A JP3757080 A JP 3757080A JP S56134738 A JPS56134738 A JP S56134738A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- partial pressure
- pressure ratio
- ratio
- cf3br
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable an ion-etching to be made even in a comparatively high pressure by a method wherein CF3X and (X)2 or (X')2 are used as induction gases (X, X' are the halogen elements other than F). CONSTITUTION:A high frequency voltage is applied to cathode to make it glow discharge, while CF3Br+Cl2 is induced 8 in a chamber 1 and exhausted. AT this time, an etching speed of Si increases with an increase of the partial pressure ratio of the Cl2 and indicates the maximum at 60% of the partial pressure ratio. On the other hand, the etching speed of SiO2 decreases monotonically and the etching ratio of Si/SiO2 reaches as much as 14 at 80% of the partial pressure ratio of the Cl2. CF3Br+Br2 also shows a high selectivity at 50% of the partial pressure ratio. A carbon plate 6 on the negative plate 6 prevents the appearance of reservoirs and an organic film of hydrocarbon system is sufficient as well. Thus, an isotropic etching is prevented and the ion-etching is made possible even in the comparatively high pressure by utilizing the fact that, for example, when CBrF3 makes discharge, Br is dissociated to make the production of F-radical difficult.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3757080A JPS56134738A (en) | 1980-03-26 | 1980-03-26 | Method of forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3757080A JPS56134738A (en) | 1980-03-26 | 1980-03-26 | Method of forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56134738A true JPS56134738A (en) | 1981-10-21 |
Family
ID=12501178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3757080A Pending JPS56134738A (en) | 1980-03-26 | 1980-03-26 | Method of forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56134738A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967635A (en) * | 1982-07-06 | 1984-04-17 | テキサス・インスツルメンツ・インコ−ポレイテツド | Chemical composition for plasma etching for anisotropic etc-hing of silicon |
| JPS5982730A (en) * | 1982-11-02 | 1984-05-12 | Toshiba Corp | Plasma etching method |
| JPS5982729A (en) * | 1982-11-02 | 1984-05-12 | Toshiba Corp | Plasma etching method |
| EP0296419A2 (en) * | 1987-06-24 | 1988-12-28 | Tegal Corporation | Xenon enhanced plasma etch |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5521596A (en) * | 1978-07-31 | 1980-02-15 | Western Electric Co | Article production by plasma etching |
| JPS5521595A (en) * | 1978-07-31 | 1980-02-15 | Western Electric Co | Article production by plasma etching |
-
1980
- 1980-03-26 JP JP3757080A patent/JPS56134738A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5521596A (en) * | 1978-07-31 | 1980-02-15 | Western Electric Co | Article production by plasma etching |
| JPS5521595A (en) * | 1978-07-31 | 1980-02-15 | Western Electric Co | Article production by plasma etching |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967635A (en) * | 1982-07-06 | 1984-04-17 | テキサス・インスツルメンツ・インコ−ポレイテツド | Chemical composition for plasma etching for anisotropic etc-hing of silicon |
| JPH05217956A (en) * | 1982-07-06 | 1993-08-27 | Texas Instr Inc <Ti> | Anisotropic plasma etching method |
| JPS5982730A (en) * | 1982-11-02 | 1984-05-12 | Toshiba Corp | Plasma etching method |
| JPS5982729A (en) * | 1982-11-02 | 1984-05-12 | Toshiba Corp | Plasma etching method |
| JPH0559578B2 (en) * | 1982-11-02 | 1993-08-31 | Tokyo Shibaura Electric Co | |
| EP0296419A2 (en) * | 1987-06-24 | 1988-12-28 | Tegal Corporation | Xenon enhanced plasma etch |
| EP0296419A3 (en) * | 1987-06-24 | 1990-02-21 | Tegal Corporation | Xenon enhanced plasma etch |
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