JPS5982730A - プラズマエツチング方法 - Google Patents

プラズマエツチング方法

Info

Publication number
JPS5982730A
JPS5982730A JP57191911A JP19191182A JPS5982730A JP S5982730 A JPS5982730 A JP S5982730A JP 57191911 A JP57191911 A JP 57191911A JP 19191182 A JP19191182 A JP 19191182A JP S5982730 A JPS5982730 A JP S5982730A
Authority
JP
Japan
Prior art keywords
silicon
etched
insulating film
etching
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57191911A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559578B2 (https=
Inventor
Masahiro Shibagaki
柴垣　正弘
Toru Watanabe
徹 渡辺
Yukimasa Yoshida
幸正 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57191911A priority Critical patent/JPS5982730A/ja
Publication of JPS5982730A publication Critical patent/JPS5982730A/ja
Publication of JPH0559578B2 publication Critical patent/JPH0559578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP57191911A 1982-11-02 1982-11-02 プラズマエツチング方法 Granted JPS5982730A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57191911A JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57191911A JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Publications (2)

Publication Number Publication Date
JPS5982730A true JPS5982730A (ja) 1984-05-12
JPH0559578B2 JPH0559578B2 (https=) 1993-08-31

Family

ID=16282493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57191911A Granted JPS5982730A (ja) 1982-11-02 1982-11-02 プラズマエツチング方法

Country Status (1)

Country Link
JP (1) JPS5982730A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
CN110931356A (zh) * 2018-09-19 2020-03-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134738A (en) * 1980-03-26 1981-10-21 Toshiba Corp Method of forming pattern
JPS57169245A (en) * 1981-03-23 1982-10-18 Western Electric Co Method of producing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134738A (en) * 1980-03-26 1981-10-21 Toshiba Corp Method of forming pattern
JPS57169245A (en) * 1981-03-23 1982-10-18 Western Electric Co Method of producing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
CN110931356A (zh) * 2018-09-19 2020-03-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法

Also Published As

Publication number Publication date
JPH0559578B2 (https=) 1993-08-31

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