TWI567997B - 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 - Google Patents

用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 Download PDF

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Publication number
TWI567997B
TWI567997B TW103107323A TW103107323A TWI567997B TW I567997 B TWI567997 B TW I567997B TW 103107323 A TW103107323 A TW 103107323A TW 103107323 A TW103107323 A TW 103107323A TW I567997 B TWI567997 B TW I567997B
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TW
Taiwan
Prior art keywords
active layer
dielectric layer
layer
thickness
oxide
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TW103107323A
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English (en)
Chinese (zh)
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TW201507166A (zh
Inventor
任東吉
泰景 元
卓尚美
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應用材料股份有限公司
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Publication of TW201507166A publication Critical patent/TW201507166A/zh
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Publication of TWI567997B publication Critical patent/TWI567997B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103107323A 2013-03-12 2014-03-12 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 TWI567997B (zh)

Applications Claiming Priority (1)

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US201361778223P 2013-03-12 2013-03-12

Publications (2)

Publication Number Publication Date
TW201507166A TW201507166A (zh) 2015-02-16
TWI567997B true TWI567997B (zh) 2017-01-21

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Family Applications (1)

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TW103107323A TWI567997B (zh) 2013-03-12 2014-03-12 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法

Country Status (6)

Country Link
US (1) US9245809B2 (https=)
JP (1) JP2016514372A (https=)
KR (1) KR101757400B1 (https=)
CN (1) CN105009297B (https=)
TW (1) TWI567997B (https=)
WO (1) WO2014158955A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052367B2 (ja) * 2018-01-18 2022-04-12 株式会社デンソー 半導体装置の製造方法
CN111599707A (zh) * 2020-05-27 2020-08-28 广州粤芯半导体技术有限公司 钝化层微裂纹的检测方法
WO2025258264A1 (ja) * 2024-06-10 2025-12-18 株式会社ジャパンディスプレイ 積層構造体、薄膜トランジスタ、および電子機器

Citations (2)

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US4599241A (en) * 1983-12-28 1986-07-08 Oki Electric Industry Co., Ltd. Method for inspecting defects of thin material film
US6225137B1 (en) * 2000-03-21 2001-05-01 Oki Electric Industry Co., Ltd. Semiconductor wafer evaluation method

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JPS6057225B2 (ja) * 1980-04-26 1985-12-13 三菱電機株式会社 半導体装置の試験方法
JPH0810195B2 (ja) * 1986-11-04 1996-01-31 松下電子工業株式会社 ピンホールの検査方法
JP2807679B2 (ja) * 1988-07-08 1998-10-08 住友シチックス株式会社 シリコン基板の絶縁膜欠陥検出方法
JPH05226367A (ja) * 1992-02-14 1993-09-03 Fuji Xerox Co Ltd 半導体素子の製造方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JPH07283282A (ja) * 1994-04-08 1995-10-27 Sony Corp 絶縁膜の欠陥検出方法
JPH0831898A (ja) * 1994-07-18 1996-02-02 Hitachi Ltd 半導体ウエハの酸化膜評価方法
JPH1022283A (ja) * 1996-07-05 1998-01-23 Nippon Steel Corp 半導体装置の製造方法
US6440870B1 (en) * 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2004221379A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 絶縁膜の評価方法
EP1596437A4 (en) * 2003-02-19 2009-12-02 Shinetsu Handotai Kk METHOD OF MANUFACTURING SOI WAFERS AND SOI WAFERS
US20050029226A1 (en) * 2003-08-07 2005-02-10 Advanced Power Technology, Inc. Plasma etching using dibromomethane addition
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JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
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JP5330739B2 (ja) * 2007-06-29 2013-10-30 ユー・ディー・シー アイルランド リミテッド 有機ｅｌ表示装置およびその製造方法
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CN102110625B (zh) * 2009-12-24 2012-07-25 中芯国际集成电路制造(上海)有限公司 一种针孔类生长缺陷的检测方法
CN103098185B (zh) 2010-08-20 2017-02-08 应用材料公司 形成无氢含硅介电薄膜的方法
KR101563541B1 (ko) 2010-12-30 2015-10-27 어플라이드 머티어리얼스, 인코포레이티드 마이크로파 플라즈마를 이용한 박막 증착

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599241A (en) * 1983-12-28 1986-07-08 Oki Electric Industry Co., Ltd. Method for inspecting defects of thin material film
US6225137B1 (en) * 2000-03-21 2001-05-01 Oki Electric Industry Co., Ltd. Semiconductor wafer evaluation method

Also Published As

Publication number Publication date
TW201507166A (zh) 2015-02-16
CN105009297B (zh) 2019-06-14
JP2016514372A (ja) 2016-05-19
KR101757400B1 (ko) 2017-07-12
KR20150127144A (ko) 2015-11-16
WO2014158955A1 (en) 2014-10-02
US9245809B2 (en) 2016-01-26
CN105009297A (zh) 2015-10-28
US20140273312A1 (en) 2014-09-18

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