KR101757400B1 - 금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법 - Google Patents

금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법 Download PDF

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KR101757400B1
KR101757400B1 KR1020157027121A KR20157027121A KR101757400B1 KR 101757400 B1 KR101757400 B1 KR 101757400B1 KR 1020157027121 A KR1020157027121 A KR 1020157027121A KR 20157027121 A KR20157027121 A KR 20157027121A KR 101757400 B1 KR101757400 B1 KR 101757400B1
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dielectric layer
active layer
layer
etchant
void regions
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Korean (ko)
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KR20150127144A (ko
Inventor
임동길
원태경
초선미
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L22/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020157027121A 2013-03-12 2014-03-06 금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법 Expired - Fee Related KR101757400B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778223P 2013-03-12 2013-03-12
US61/778,223 2013-03-12
PCT/US2014/021086 WO2014158955A1 (en) 2013-03-12 2014-03-06 Pinhole evaluation method of dielectric films for metal oxide semiconductor tft

Publications (2)

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KR20150127144A KR20150127144A (ko) 2015-11-16
KR101757400B1 true KR101757400B1 (ko) 2017-07-12

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KR1020157027121A Expired - Fee Related KR101757400B1 (ko) 2013-03-12 2014-03-06 금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법

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US (1) US9245809B2 (https=)
JP (1) JP2016514372A (https=)
KR (1) KR101757400B1 (https=)
CN (1) CN105009297B (https=)
TW (1) TWI567997B (https=)
WO (1) WO2014158955A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052367B2 (ja) * 2018-01-18 2022-04-12 株式会社デンソー 半導体装置の製造方法
CN111599707A (zh) * 2020-05-27 2020-08-28 广州粤芯半导体技术有限公司 钝化层微裂纹的检测方法
WO2025258264A1 (ja) * 2024-06-10 2025-12-18 株式会社ジャパンディスプレイ 積層構造体、薄膜トランジスタ、および電子機器

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JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2008141113A (ja) * 2006-12-05 2008-06-19 Canon Inc エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液

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JPS60140729A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd 半導体素子膜の欠陥検査方法
JPH0810195B2 (ja) * 1986-11-04 1996-01-31 松下電子工業株式会社 ピンホールの検査方法
JP2807679B2 (ja) * 1988-07-08 1998-10-08 住友シチックス株式会社 シリコン基板の絶縁膜欠陥検出方法
JPH05226367A (ja) * 1992-02-14 1993-09-03 Fuji Xerox Co Ltd 半導体素子の製造方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JPH07283282A (ja) * 1994-04-08 1995-10-27 Sony Corp 絶縁膜の欠陥検出方法
JPH0831898A (ja) * 1994-07-18 1996-02-02 Hitachi Ltd 半導体ウエハの酸化膜評価方法
JPH1022283A (ja) * 1996-07-05 1998-01-23 Nippon Steel Corp 半導体装置の製造方法
JP3685678B2 (ja) * 2000-03-21 2005-08-24 沖電気工業株式会社 半導体ウエハの評価方法
US6440870B1 (en) * 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2004221379A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 絶縁膜の評価方法
EP1596437A4 (en) * 2003-02-19 2009-12-02 Shinetsu Handotai Kk METHOD OF MANUFACTURING SOI WAFERS AND SOI WAFERS
US20050029226A1 (en) * 2003-08-07 2005-02-10 Advanced Power Technology, Inc. Plasma etching using dibromomethane addition
US6949481B1 (en) 2003-12-09 2005-09-27 Fasl, Llc Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
JP5330739B2 (ja) * 2007-06-29 2013-10-30 ユー・ディー・シー アイルランド リミテッド 有機ｅｌ表示装置およびその製造方法
US20090001360A1 (en) * 2007-06-29 2009-01-01 Masaya Nakayama Organic el display and method for producing the same
KR101412761B1 (ko) 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
CN102110625B (zh) * 2009-12-24 2012-07-25 中芯国际集成电路制造(上海)有限公司 一种针孔类生长缺陷的检测方法
CN103098185B (zh) 2010-08-20 2017-02-08 应用材料公司 形成无氢含硅介电薄膜的方法
KR101563541B1 (ko) 2010-12-30 2015-10-27 어플라이드 머티어리얼스, 인코포레이티드 마이크로파 플라즈마를 이용한 박막 증착

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2008141113A (ja) * 2006-12-05 2008-06-19 Canon Inc エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液

Also Published As

Publication number Publication date
TW201507166A (zh) 2015-02-16
CN105009297B (zh) 2019-06-14
JP2016514372A (ja) 2016-05-19
KR20150127144A (ko) 2015-11-16
WO2014158955A1 (en) 2014-10-02
US9245809B2 (en) 2016-01-26
TWI567997B (zh) 2017-01-21
CN105009297A (zh) 2015-10-28
US20140273312A1 (en) 2014-09-18

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