CN104956479A - 具有偏移通孔的集成电路封装 - Google Patents
具有偏移通孔的集成电路封装 Download PDFInfo
- Publication number
- CN104956479A CN104956479A CN201380033561.5A CN201380033561A CN104956479A CN 104956479 A CN104956479 A CN 104956479A CN 201380033561 A CN201380033561 A CN 201380033561A CN 104956479 A CN104956479 A CN 104956479A
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- Prior art keywords
- integrated circuit
- center
- insulating layer
- semiconductor chip
- vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
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- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
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- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/227—Multiple bumps having different sizes
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/234—Cross-sectional shape, i.e. in side view
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/237—Multiple bump connectors having different shapes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/247—Dispositions of multiple bumps
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- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/247—Dispositions of multiple bumps
- H10W72/248—Top-view layouts, e.g. mirror arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/936—Multiple bond pads having different shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
- H10W72/9445—Top-view layouts, e.g. mirror arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811602711.0A CN110060977A (zh) | 2012-06-25 | 2013-06-25 | 具有偏移通孔的集成电路封装 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/532,126 | 2012-06-25 | ||
| US13/532,126 US8624404B1 (en) | 2012-06-25 | 2012-06-25 | Integrated circuit package having offset vias |
| PCT/US2013/047634 WO2014004520A1 (en) | 2012-06-25 | 2013-06-25 | Integrated circuit package having offset vias |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811602711.0A Division CN110060977A (zh) | 2012-06-25 | 2013-06-25 | 具有偏移通孔的集成电路封装 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104956479A true CN104956479A (zh) | 2015-09-30 |
Family
ID=49773740
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380033561.5A Pending CN104956479A (zh) | 2012-06-25 | 2013-06-25 | 具有偏移通孔的集成电路封装 |
| CN201811602711.0A Pending CN110060977A (zh) | 2012-06-25 | 2013-06-25 | 具有偏移通孔的集成电路封装 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811602711.0A Pending CN110060977A (zh) | 2012-06-25 | 2013-06-25 | 具有偏移通孔的集成电路封装 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8624404B1 (enExample) |
| EP (1) | EP2865006A4 (enExample) |
| JP (1) | JP5964511B2 (enExample) |
| KR (1) | KR101569162B1 (enExample) |
| CN (2) | CN104956479A (enExample) |
| IN (1) | IN2014DN10923A (enExample) |
| WO (1) | WO2014004520A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117059583A (zh) * | 2023-10-12 | 2023-11-14 | 江苏芯德半导体科技有限公司 | 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6180801B2 (ja) * | 2013-06-07 | 2017-08-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6221499B2 (ja) * | 2013-08-19 | 2017-11-01 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
| US10096639B2 (en) | 2016-10-10 | 2018-10-09 | Sensors Unlimited, Inc. | Bump structures for interconnecting focal plane arrays |
| DE102017128568A1 (de) * | 2017-12-01 | 2019-06-06 | Infineon Technologies Ag | Halbleiterchip mit einer vielzahl von externen kontakten, chip-anordnung und verfahren zum überprüfen einer ausrichtung einer position eines halbleiterchips |
| US10497657B1 (en) * | 2018-06-13 | 2019-12-03 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
| CN109004080B (zh) * | 2018-08-10 | 2024-08-06 | 浙江熔城半导体有限公司 | 带有延伸双围堰及焊锡的芯片封装结构及其制作方法 |
| KR102822948B1 (ko) * | 2020-08-12 | 2025-06-20 | 삼성전자주식회사 | 배선 구조물 및 이를 포함하는 반도체 칩 |
| US20230029763A1 (en) * | 2021-07-30 | 2023-02-02 | Cree, Inc. | Interconnect metal openings through dielectric films |
| DE112023004553T5 (de) | 2022-10-31 | 2025-08-14 | KYOCERA AVX Components Corporation | Mehrschichtiger Kondensator |
| US12489073B1 (en) | 2024-11-15 | 2025-12-02 | Globalfoundries U.S. Inc. | Acentric non-round electrical interconnections |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093406A (ja) * | 2004-09-24 | 2006-04-06 | Fujikura Ltd | 電子部品及び電子装置 |
| CN1866504A (zh) * | 2005-05-17 | 2006-11-22 | 矽品精密工业股份有限公司 | 半导体装置及其制法 |
| US20090174084A1 (en) * | 2008-01-07 | 2009-07-09 | International Business Machines Corporation | Via offsetting to reduce stress under the first level interconnect (fli) in microelectronics packaging |
| US20100207272A1 (en) * | 2009-02-19 | 2010-08-19 | Infineon Technologies Ag | Semiconductor device including conductive element |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63305530A (ja) * | 1987-06-05 | 1988-12-13 | Hitachi Ltd | 半導体装置の製造方法 |
| KR950001962A (ko) * | 1993-06-30 | 1995-01-04 | 김광호 | 반도체 칩 범프 |
| JP3217624B2 (ja) * | 1994-11-12 | 2001-10-09 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
| US6107109A (en) * | 1997-12-18 | 2000-08-22 | Micron Technology, Inc. | Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate |
| US6075290A (en) * | 1998-02-26 | 2000-06-13 | National Semiconductor Corporation | Surface mount die: wafer level chip-scale package and process for making the same |
| JPH11340355A (ja) * | 1998-05-25 | 1999-12-10 | Nec Corp | 半導体装置 |
| JP3351355B2 (ja) * | 1998-09-29 | 2002-11-25 | 株式会社デンソー | 電子部品の実装構造 |
| JP3846550B2 (ja) * | 1999-03-16 | 2006-11-15 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US6545192B2 (en) | 1999-05-11 | 2003-04-08 | Shell Oil Company | Process for separating olefins from saturated hydrocarbons |
| US7034402B1 (en) * | 2000-06-28 | 2006-04-25 | Intel Corporation | Device with segmented ball limiting metallurgy |
| US6703069B1 (en) * | 2002-09-30 | 2004-03-09 | Intel Corporation | Under bump metallurgy for lead-tin bump over copper pad |
| JP4181510B2 (ja) * | 2003-02-28 | 2008-11-19 | 日本特殊陶業株式会社 | 樹脂製配線基板 |
| JP2005012065A (ja) * | 2003-06-20 | 2005-01-13 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| TWI220308B (en) * | 2003-08-07 | 2004-08-11 | Advanced Semiconductor Eng | Under bump metallurgic layer |
| US7197727B1 (en) | 2003-11-04 | 2007-03-27 | Advanced Micro Devices, Inc. | Interconnect speed sensing circuitry |
| US7095116B1 (en) * | 2003-12-01 | 2006-08-22 | National Semiconductor Corporation | Aluminum-free under bump metallization structure |
| US7259458B2 (en) | 2004-08-18 | 2007-08-21 | Advanced Micro Devices, Inc. | Integrated circuit with increased heat transfer |
| JP2006253611A (ja) * | 2005-03-14 | 2006-09-21 | Fuji Xerox Co Ltd | 基板、誘導構造形成装置及び方法、及び位置決め方法 |
| US20060227237A1 (en) | 2005-03-31 | 2006-10-12 | International Business Machines Corporation | Video surveillance system and method with combined video and audio recognition |
| US7206703B1 (en) | 2005-05-02 | 2007-04-17 | Advanced Micro Devices, Inc. | System and method for testing packaged devices using time domain reflectometry |
| TWI258176B (en) * | 2005-05-12 | 2006-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor device and fabrication method thereof |
| JP5050384B2 (ja) * | 2006-03-31 | 2012-10-17 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US20080124840A1 (en) | 2006-07-31 | 2008-05-29 | Su Michael Z | Electrical Insulating Layer for Metallic Thermal Interface Material |
| US7616021B2 (en) | 2007-01-18 | 2009-11-10 | Advanced Micro Devices, Inc. | Method and device for determining an operational lifetime of an integrated circuit device |
| US20080191318A1 (en) | 2007-02-09 | 2008-08-14 | Advanced Micro Devices, Inc. | Semiconductor device and method of sawing semiconductor device |
| US7834449B2 (en) * | 2007-04-30 | 2010-11-16 | Broadcom Corporation | Highly reliable low cost structure for wafer-level ball grid array packaging |
| US8344505B2 (en) | 2007-08-29 | 2013-01-01 | Ati Technologies Ulc | Wafer level packaging of semiconductor chips |
| US7679200B2 (en) | 2007-09-11 | 2010-03-16 | Globalfoundries Inc. | Semiconductor chip with crack stop |
| US20090278263A1 (en) * | 2008-05-09 | 2009-11-12 | Texas Instruments Incorporated | Reliability wcsp layouts |
| US7737563B2 (en) | 2008-06-04 | 2010-06-15 | Globalfoundries Inc. | Semiconductor chip with reinforcement structure |
| US8212357B2 (en) * | 2008-08-08 | 2012-07-03 | International Business Machines Corporation | Combination via and pad structure for improved solder bump electromigration characteristics |
| US7897433B2 (en) | 2009-02-18 | 2011-03-01 | Advanced Micro Devices, Inc. | Semiconductor chip with reinforcement layer and method of making the same |
| US8293581B2 (en) | 2009-02-18 | 2012-10-23 | Globalfoundries Inc. | Semiconductor chip with protective scribe structure |
| US8198133B2 (en) * | 2009-07-13 | 2012-06-12 | International Business Machines Corporation | Structures and methods to improve lead-free C4 interconnect reliability |
| US7977160B2 (en) | 2009-08-10 | 2011-07-12 | GlobalFoundries, Inc. | Semiconductor devices having stress relief layers and methods for fabricating the same |
| US8269348B2 (en) * | 2010-02-22 | 2012-09-18 | Texas Instruments Incorporated | IC die including RDL capture pads with notch having bonding connectors or its UBM pad over the notch |
| TWI478303B (zh) * | 2010-09-27 | 2015-03-21 | 日月光半導體製造股份有限公司 | 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構 |
-
2012
- 2012-06-25 US US13/532,126 patent/US8624404B1/en active Active
-
2013
- 2013-06-25 IN IN10923DEN2014 patent/IN2014DN10923A/en unknown
- 2013-06-25 EP EP13808814.1A patent/EP2865006A4/en not_active Withdrawn
- 2013-06-25 CN CN201380033561.5A patent/CN104956479A/zh active Pending
- 2013-06-25 JP JP2015520404A patent/JP5964511B2/ja active Active
- 2013-06-25 WO PCT/US2013/047634 patent/WO2014004520A1/en not_active Ceased
- 2013-06-25 KR KR1020157001855A patent/KR101569162B1/ko active Active
- 2013-06-25 CN CN201811602711.0A patent/CN110060977A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093406A (ja) * | 2004-09-24 | 2006-04-06 | Fujikura Ltd | 電子部品及び電子装置 |
| CN1866504A (zh) * | 2005-05-17 | 2006-11-22 | 矽品精密工业股份有限公司 | 半导体装置及其制法 |
| US20090174084A1 (en) * | 2008-01-07 | 2009-07-09 | International Business Machines Corporation | Via offsetting to reduce stress under the first level interconnect (fli) in microelectronics packaging |
| US20100207272A1 (en) * | 2009-02-19 | 2010-08-19 | Infineon Technologies Ag | Semiconductor device including conductive element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117059583A (zh) * | 2023-10-12 | 2023-11-14 | 江苏芯德半导体科技有限公司 | 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法 |
| CN117059583B (zh) * | 2023-10-12 | 2024-01-09 | 江苏芯德半导体科技有限公司 | 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2865006A1 (en) | 2015-04-29 |
| US8624404B1 (en) | 2014-01-07 |
| IN2014DN10923A (enExample) | 2015-09-18 |
| US20130341802A1 (en) | 2013-12-26 |
| EP2865006A4 (en) | 2016-03-23 |
| JP5964511B2 (ja) | 2016-08-03 |
| JP2015525968A (ja) | 2015-09-07 |
| KR20150016641A (ko) | 2015-02-12 |
| WO2014004520A1 (en) | 2014-01-03 |
| CN110060977A (zh) | 2019-07-26 |
| KR101569162B1 (ko) | 2015-11-13 |
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