JP5964511B2 - オフセットビア(vias)を有する集積回路パッケージ - Google Patents
オフセットビア(vias)を有する集積回路パッケージ Download PDFInfo
- Publication number
- JP5964511B2 JP5964511B2 JP2015520404A JP2015520404A JP5964511B2 JP 5964511 B2 JP5964511 B2 JP 5964511B2 JP 2015520404 A JP2015520404 A JP 2015520404A JP 2015520404 A JP2015520404 A JP 2015520404A JP 5964511 B2 JP5964511 B2 JP 5964511B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor chip
- center
- insulating layer
- vias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H10W74/147—
-
- H10W72/012—
-
- H10W72/019—
-
- H10W72/20—
-
- H10W72/90—
-
- H10W20/082—
-
- H10W42/121—
-
- H10W72/01235—
-
- H10W72/01255—
-
- H10W72/01935—
-
- H10W72/0198—
-
- H10W72/072—
-
- H10W72/07236—
-
- H10W72/227—
-
- H10W72/234—
-
- H10W72/237—
-
- H10W72/241—
-
- H10W72/242—
-
- H10W72/244—
-
- H10W72/247—
-
- H10W72/248—
-
- H10W72/252—
-
- H10W72/29—
-
- H10W72/926—
-
- H10W72/934—
-
- H10W72/936—
-
- H10W72/9415—
-
- H10W72/9445—
-
- H10W72/952—
-
- H10W74/15—
-
- H10W90/724—
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/532,126 US8624404B1 (en) | 2012-06-25 | 2012-06-25 | Integrated circuit package having offset vias |
| US13/532,126 | 2012-06-25 | ||
| PCT/US2013/047634 WO2014004520A1 (en) | 2012-06-25 | 2013-06-25 | Integrated circuit package having offset vias |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015525968A JP2015525968A (ja) | 2015-09-07 |
| JP5964511B2 true JP5964511B2 (ja) | 2016-08-03 |
Family
ID=49773740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015520404A Active JP5964511B2 (ja) | 2012-06-25 | 2013-06-25 | オフセットビア(vias)を有する集積回路パッケージ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8624404B1 (enExample) |
| EP (1) | EP2865006A4 (enExample) |
| JP (1) | JP5964511B2 (enExample) |
| KR (1) | KR101569162B1 (enExample) |
| CN (2) | CN110060977A (enExample) |
| IN (1) | IN2014DN10923A (enExample) |
| WO (1) | WO2014004520A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6180801B2 (ja) * | 2013-06-07 | 2017-08-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6221499B2 (ja) * | 2013-08-19 | 2017-11-01 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
| US10096639B2 (en) * | 2016-10-10 | 2018-10-09 | Sensors Unlimited, Inc. | Bump structures for interconnecting focal plane arrays |
| DE102017128568A1 (de) * | 2017-12-01 | 2019-06-06 | Infineon Technologies Ag | Halbleiterchip mit einer vielzahl von externen kontakten, chip-anordnung und verfahren zum überprüfen einer ausrichtung einer position eines halbleiterchips |
| US10497657B1 (en) * | 2018-06-13 | 2019-12-03 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
| CN109004080B (zh) * | 2018-08-10 | 2024-08-06 | 浙江熔城半导体有限公司 | 带有延伸双围堰及焊锡的芯片封装结构及其制作方法 |
| KR102822948B1 (ko) * | 2020-08-12 | 2025-06-20 | 삼성전자주식회사 | 배선 구조물 및 이를 포함하는 반도체 칩 |
| US20230029763A1 (en) * | 2021-07-30 | 2023-02-02 | Cree, Inc. | Interconnect metal openings through dielectric films |
| CN117059583B (zh) * | 2023-10-12 | 2024-01-09 | 江苏芯德半导体科技有限公司 | 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法 |
| US12489073B1 (en) | 2024-11-15 | 2025-12-02 | Globalfoundries U.S. Inc. | Acentric non-round electrical interconnections |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63305530A (ja) * | 1987-06-05 | 1988-12-13 | Hitachi Ltd | 半導体装置の製造方法 |
| KR950001962A (ko) * | 1993-06-30 | 1995-01-04 | 김광호 | 반도체 칩 범프 |
| JP3217624B2 (ja) * | 1994-11-12 | 2001-10-09 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
| US6107109A (en) * | 1997-12-18 | 2000-08-22 | Micron Technology, Inc. | Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate |
| US6075290A (en) * | 1998-02-26 | 2000-06-13 | National Semiconductor Corporation | Surface mount die: wafer level chip-scale package and process for making the same |
| JPH11340355A (ja) * | 1998-05-25 | 1999-12-10 | Nec Corp | 半導体装置 |
| JP3351355B2 (ja) * | 1998-09-29 | 2002-11-25 | 株式会社デンソー | 電子部品の実装構造 |
| WO2000055898A1 (en) * | 1999-03-16 | 2000-09-21 | Seiko Epson Corporation | Semiconductor device, method of manufacture thereof, circuit board, and electronic device |
| US6545192B2 (en) | 1999-05-11 | 2003-04-08 | Shell Oil Company | Process for separating olefins from saturated hydrocarbons |
| US7034402B1 (en) * | 2000-06-28 | 2006-04-25 | Intel Corporation | Device with segmented ball limiting metallurgy |
| US6703069B1 (en) * | 2002-09-30 | 2004-03-09 | Intel Corporation | Under bump metallurgy for lead-tin bump over copper pad |
| JP4181510B2 (ja) * | 2003-02-28 | 2008-11-19 | 日本特殊陶業株式会社 | 樹脂製配線基板 |
| JP2005012065A (ja) * | 2003-06-20 | 2005-01-13 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| TWI220308B (en) * | 2003-08-07 | 2004-08-11 | Advanced Semiconductor Eng | Under bump metallurgic layer |
| US7197727B1 (en) | 2003-11-04 | 2007-03-27 | Advanced Micro Devices, Inc. | Interconnect speed sensing circuitry |
| US7095116B1 (en) * | 2003-12-01 | 2006-08-22 | National Semiconductor Corporation | Aluminum-free under bump metallization structure |
| US7259458B2 (en) | 2004-08-18 | 2007-08-21 | Advanced Micro Devices, Inc. | Integrated circuit with increased heat transfer |
| JP4628731B2 (ja) * | 2004-09-24 | 2011-02-09 | 株式会社フジクラ | 電子部品及び電子装置 |
| JP2006253611A (ja) * | 2005-03-14 | 2006-09-21 | Fuji Xerox Co Ltd | 基板、誘導構造形成装置及び方法、及び位置決め方法 |
| US20060227237A1 (en) | 2005-03-31 | 2006-10-12 | International Business Machines Corporation | Video surveillance system and method with combined video and audio recognition |
| US7206703B1 (en) | 2005-05-02 | 2007-04-17 | Advanced Micro Devices, Inc. | System and method for testing packaged devices using time domain reflectometry |
| TWI258176B (en) * | 2005-05-12 | 2006-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor device and fabrication method thereof |
| CN100382291C (zh) * | 2005-05-17 | 2008-04-16 | 矽品精密工业股份有限公司 | 半导体装置及其制法 |
| JP5050384B2 (ja) * | 2006-03-31 | 2012-10-17 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US20080124840A1 (en) | 2006-07-31 | 2008-05-29 | Su Michael Z | Electrical Insulating Layer for Metallic Thermal Interface Material |
| US7616021B2 (en) | 2007-01-18 | 2009-11-10 | Advanced Micro Devices, Inc. | Method and device for determining an operational lifetime of an integrated circuit device |
| US20080191318A1 (en) | 2007-02-09 | 2008-08-14 | Advanced Micro Devices, Inc. | Semiconductor device and method of sawing semiconductor device |
| US7834449B2 (en) * | 2007-04-30 | 2010-11-16 | Broadcom Corporation | Highly reliable low cost structure for wafer-level ball grid array packaging |
| US8344505B2 (en) | 2007-08-29 | 2013-01-01 | Ati Technologies Ulc | Wafer level packaging of semiconductor chips |
| US7679200B2 (en) | 2007-09-11 | 2010-03-16 | Globalfoundries Inc. | Semiconductor chip with crack stop |
| US7812438B2 (en) * | 2008-01-07 | 2010-10-12 | International Business Machines Corporation | Via offsetting to reduce stress under the first level interconnect (FLI) in microelectronics packaging |
| US20090278263A1 (en) * | 2008-05-09 | 2009-11-12 | Texas Instruments Incorporated | Reliability wcsp layouts |
| US7737563B2 (en) | 2008-06-04 | 2010-06-15 | Globalfoundries Inc. | Semiconductor chip with reinforcement structure |
| US8212357B2 (en) * | 2008-08-08 | 2012-07-03 | International Business Machines Corporation | Combination via and pad structure for improved solder bump electromigration characteristics |
| US8293581B2 (en) | 2009-02-18 | 2012-10-23 | Globalfoundries Inc. | Semiconductor chip with protective scribe structure |
| US7897433B2 (en) | 2009-02-18 | 2011-03-01 | Advanced Micro Devices, Inc. | Semiconductor chip with reinforcement layer and method of making the same |
| US8072071B2 (en) * | 2009-02-19 | 2011-12-06 | Infineon Technologies Ag | Semiconductor device including conductive element |
| US8198133B2 (en) * | 2009-07-13 | 2012-06-12 | International Business Machines Corporation | Structures and methods to improve lead-free C4 interconnect reliability |
| US7977160B2 (en) | 2009-08-10 | 2011-07-12 | GlobalFoundries, Inc. | Semiconductor devices having stress relief layers and methods for fabricating the same |
| US8269348B2 (en) * | 2010-02-22 | 2012-09-18 | Texas Instruments Incorporated | IC die including RDL capture pads with notch having bonding connectors or its UBM pad over the notch |
| TWI478303B (zh) * | 2010-09-27 | 2015-03-21 | 日月光半導體製造股份有限公司 | 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構 |
-
2012
- 2012-06-25 US US13/532,126 patent/US8624404B1/en active Active
-
2013
- 2013-06-25 IN IN10923DEN2014 patent/IN2014DN10923A/en unknown
- 2013-06-25 WO PCT/US2013/047634 patent/WO2014004520A1/en not_active Ceased
- 2013-06-25 KR KR1020157001855A patent/KR101569162B1/ko active Active
- 2013-06-25 JP JP2015520404A patent/JP5964511B2/ja active Active
- 2013-06-25 CN CN201811602711.0A patent/CN110060977A/zh active Pending
- 2013-06-25 EP EP13808814.1A patent/EP2865006A4/en not_active Withdrawn
- 2013-06-25 CN CN201380033561.5A patent/CN104956479A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN104956479A (zh) | 2015-09-30 |
| IN2014DN10923A (enExample) | 2015-09-18 |
| CN110060977A (zh) | 2019-07-26 |
| US8624404B1 (en) | 2014-01-07 |
| EP2865006A1 (en) | 2015-04-29 |
| JP2015525968A (ja) | 2015-09-07 |
| KR101569162B1 (ko) | 2015-11-13 |
| US20130341802A1 (en) | 2013-12-26 |
| EP2865006A4 (en) | 2016-03-23 |
| KR20150016641A (ko) | 2015-02-12 |
| WO2014004520A1 (en) | 2014-01-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5964511B2 (ja) | オフセットビア(vias)を有する集積回路パッケージ | |
| KR102210975B1 (ko) | 반도체 패키지 내의 도전성 비아 및 그 형성 방법 | |
| TWI640045B (zh) | 半導體裝置及製造方法 | |
| CN113113381B (zh) | 封装结构及其形成方法 | |
| CN109148308B (zh) | 封装件及其形成方法 | |
| US11257767B2 (en) | Interconnect crack arrestor structure and methods | |
| US9812429B2 (en) | Interconnect structures for assembly of multi-layer semiconductor devices | |
| US9299649B2 (en) | 3D packages and methods for forming the same | |
| CN106328602B (zh) | 封装件结构 | |
| CN102208384B (zh) | 半导体结构及半导体装置的形成方法 | |
| CN111261608B (zh) | 半导体器件及其形成方法 | |
| CN113380746B (zh) | 半导体器件和结构及其制造方法 | |
| CN110957279B (zh) | 半导体器件及其形成方法 | |
| CN107342277A (zh) | 封装件及其形成方法 | |
| US20190164920A1 (en) | Semiconductor device with bump structure and method of making semiconductor device | |
| TWI795187B (zh) | 半導體封裝結構及其形成方法 | |
| KR102481141B1 (ko) | 반도체 패키징된 디바이스 내의 본딩 구조물 및 그 형성 방법 | |
| CN113675163A (zh) | 半导体器件及其制造方法 | |
| US9431370B2 (en) | Compliant dielectric layer for semiconductor device | |
| CN116741730A (zh) | 半导体器件及其形成方法 | |
| CN115249682A (zh) | 封装结构及其形成方法 | |
| CN111223821B (zh) | 半导体器件封装件和半导体结构 | |
| CN120015631A (zh) | 封装件及其形成方法 | |
| CN120767208A (zh) | 封装件及其形成方法 | |
| KR20150088440A (ko) | 범프 구조물, 그 제조방법 및 이를 포함하는 반도체 패키지 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150309 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20150309 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20150604 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150609 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150908 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160105 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160502 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160513 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160531 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160629 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5964511 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |