JP5964511B2 - オフセットビア(vias)を有する集積回路パッケージ - Google Patents

オフセットビア(vias)を有する集積回路パッケージ Download PDF

Info

Publication number
JP5964511B2
JP5964511B2 JP2015520404A JP2015520404A JP5964511B2 JP 5964511 B2 JP5964511 B2 JP 5964511B2 JP 2015520404 A JP2015520404 A JP 2015520404A JP 2015520404 A JP2015520404 A JP 2015520404A JP 5964511 B2 JP5964511 B2 JP 5964511B2
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor chip
center
insulating layer
vias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015520404A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015525968A (ja
Inventor
ジャオイン スー マイケル
ジャオイン スー マイケル
レイ フー
レイ フー
クーヘンマイスター フランク
クーヘンマイスター フランク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2015525968A publication Critical patent/JP2015525968A/ja
Application granted granted Critical
Publication of JP5964511B2 publication Critical patent/JP5964511B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/081Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • H10W72/01931Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/227Multiple bumps having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/234Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/237Multiple bump connectors having different shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/242Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/244Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • H10W72/248Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/934Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/936Multiple bond pads having different shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • H10W72/9445Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
JP2015520404A 2012-06-25 2013-06-25 オフセットビア(vias)を有する集積回路パッケージ Active JP5964511B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/532,126 2012-06-25
US13/532,126 US8624404B1 (en) 2012-06-25 2012-06-25 Integrated circuit package having offset vias
PCT/US2013/047634 WO2014004520A1 (en) 2012-06-25 2013-06-25 Integrated circuit package having offset vias

Publications (2)

Publication Number Publication Date
JP2015525968A JP2015525968A (ja) 2015-09-07
JP5964511B2 true JP5964511B2 (ja) 2016-08-03

Family

ID=49773740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015520404A Active JP5964511B2 (ja) 2012-06-25 2013-06-25 オフセットビア(vias)を有する集積回路パッケージ

Country Status (7)

Country Link
US (1) US8624404B1 (enExample)
EP (1) EP2865006A4 (enExample)
JP (1) JP5964511B2 (enExample)
KR (1) KR101569162B1 (enExample)
CN (2) CN104956479A (enExample)
IN (1) IN2014DN10923A (enExample)
WO (1) WO2014004520A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6180801B2 (ja) * 2013-06-07 2017-08-16 ルネサスエレクトロニクス株式会社 半導体装置
JP6221499B2 (ja) * 2013-08-19 2017-11-01 富士通株式会社 電子装置及び電子装置の製造方法
US10096639B2 (en) 2016-10-10 2018-10-09 Sensors Unlimited, Inc. Bump structures for interconnecting focal plane arrays
DE102017128568A1 (de) * 2017-12-01 2019-06-06 Infineon Technologies Ag Halbleiterchip mit einer vielzahl von externen kontakten, chip-anordnung und verfahren zum überprüfen einer ausrichtung einer position eines halbleiterchips
US10497657B1 (en) * 2018-06-13 2019-12-03 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN109004080B (zh) * 2018-08-10 2024-08-06 浙江熔城半导体有限公司 带有延伸双围堰及焊锡的芯片封装结构及其制作方法
KR102822948B1 (ko) * 2020-08-12 2025-06-20 삼성전자주식회사 배선 구조물 및 이를 포함하는 반도체 칩
US20230029763A1 (en) * 2021-07-30 2023-02-02 Cree, Inc. Interconnect metal openings through dielectric films
DE112023004553T5 (de) 2022-10-31 2025-08-14 KYOCERA AVX Components Corporation Mehrschichtiger Kondensator
CN117059583B (zh) * 2023-10-12 2024-01-09 江苏芯德半导体科技有限公司 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法
US12489073B1 (en) 2024-11-15 2025-12-02 Globalfoundries U.S. Inc. Acentric non-round electrical interconnections

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305530A (ja) * 1987-06-05 1988-12-13 Hitachi Ltd 半導体装置の製造方法
KR950001962A (ko) * 1993-06-30 1995-01-04 김광호 반도체 칩 범프
JP3217624B2 (ja) * 1994-11-12 2001-10-09 東芝マイクロエレクトロニクス株式会社 半導体装置
US6107109A (en) * 1997-12-18 2000-08-22 Micron Technology, Inc. Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate
US6075290A (en) * 1998-02-26 2000-06-13 National Semiconductor Corporation Surface mount die: wafer level chip-scale package and process for making the same
JPH11340355A (ja) * 1998-05-25 1999-12-10 Nec Corp 半導体装置
JP3351355B2 (ja) * 1998-09-29 2002-11-25 株式会社デンソー 電子部品の実装構造
JP3846550B2 (ja) * 1999-03-16 2006-11-15 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
US6545192B2 (en) 1999-05-11 2003-04-08 Shell Oil Company Process for separating olefins from saturated hydrocarbons
US7034402B1 (en) * 2000-06-28 2006-04-25 Intel Corporation Device with segmented ball limiting metallurgy
US6703069B1 (en) * 2002-09-30 2004-03-09 Intel Corporation Under bump metallurgy for lead-tin bump over copper pad
JP4181510B2 (ja) * 2003-02-28 2008-11-19 日本特殊陶業株式会社 樹脂製配線基板
JP2005012065A (ja) * 2003-06-20 2005-01-13 Renesas Technology Corp 半導体装置およびその製造方法
TWI220308B (en) * 2003-08-07 2004-08-11 Advanced Semiconductor Eng Under bump metallurgic layer
US7197727B1 (en) 2003-11-04 2007-03-27 Advanced Micro Devices, Inc. Interconnect speed sensing circuitry
US7095116B1 (en) * 2003-12-01 2006-08-22 National Semiconductor Corporation Aluminum-free under bump metallization structure
US7259458B2 (en) 2004-08-18 2007-08-21 Advanced Micro Devices, Inc. Integrated circuit with increased heat transfer
JP4628731B2 (ja) * 2004-09-24 2011-02-09 株式会社フジクラ 電子部品及び電子装置
JP2006253611A (ja) * 2005-03-14 2006-09-21 Fuji Xerox Co Ltd 基板、誘導構造形成装置及び方法、及び位置決め方法
US20060227237A1 (en) 2005-03-31 2006-10-12 International Business Machines Corporation Video surveillance system and method with combined video and audio recognition
US7206703B1 (en) 2005-05-02 2007-04-17 Advanced Micro Devices, Inc. System and method for testing packaged devices using time domain reflectometry
TWI258176B (en) * 2005-05-12 2006-07-11 Siliconware Precision Industries Co Ltd Semiconductor device and fabrication method thereof
CN100382291C (zh) * 2005-05-17 2008-04-16 矽品精密工业股份有限公司 半导体装置及其制法
JP5050384B2 (ja) * 2006-03-31 2012-10-17 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US20080124840A1 (en) 2006-07-31 2008-05-29 Su Michael Z Electrical Insulating Layer for Metallic Thermal Interface Material
US7616021B2 (en) 2007-01-18 2009-11-10 Advanced Micro Devices, Inc. Method and device for determining an operational lifetime of an integrated circuit device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
US8344505B2 (en) 2007-08-29 2013-01-01 Ati Technologies Ulc Wafer level packaging of semiconductor chips
US7679200B2 (en) 2007-09-11 2010-03-16 Globalfoundries Inc. Semiconductor chip with crack stop
US7812438B2 (en) * 2008-01-07 2010-10-12 International Business Machines Corporation Via offsetting to reduce stress under the first level interconnect (FLI) in microelectronics packaging
US20090278263A1 (en) * 2008-05-09 2009-11-12 Texas Instruments Incorporated Reliability wcsp layouts
US7737563B2 (en) 2008-06-04 2010-06-15 Globalfoundries Inc. Semiconductor chip with reinforcement structure
US8212357B2 (en) * 2008-08-08 2012-07-03 International Business Machines Corporation Combination via and pad structure for improved solder bump electromigration characteristics
US7897433B2 (en) 2009-02-18 2011-03-01 Advanced Micro Devices, Inc. Semiconductor chip with reinforcement layer and method of making the same
US8293581B2 (en) 2009-02-18 2012-10-23 Globalfoundries Inc. Semiconductor chip with protective scribe structure
US8072071B2 (en) * 2009-02-19 2011-12-06 Infineon Technologies Ag Semiconductor device including conductive element
US8198133B2 (en) * 2009-07-13 2012-06-12 International Business Machines Corporation Structures and methods to improve lead-free C4 interconnect reliability
US7977160B2 (en) 2009-08-10 2011-07-12 GlobalFoundries, Inc. Semiconductor devices having stress relief layers and methods for fabricating the same
US8269348B2 (en) * 2010-02-22 2012-09-18 Texas Instruments Incorporated IC die including RDL capture pads with notch having bonding connectors or its UBM pad over the notch
TWI478303B (zh) * 2010-09-27 2015-03-21 日月光半導體製造股份有限公司 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構

Also Published As

Publication number Publication date
EP2865006A1 (en) 2015-04-29
US8624404B1 (en) 2014-01-07
IN2014DN10923A (enExample) 2015-09-18
US20130341802A1 (en) 2013-12-26
EP2865006A4 (en) 2016-03-23
JP2015525968A (ja) 2015-09-07
KR20150016641A (ko) 2015-02-12
WO2014004520A1 (en) 2014-01-03
CN110060977A (zh) 2019-07-26
CN104956479A (zh) 2015-09-30
KR101569162B1 (ko) 2015-11-13

Similar Documents

Publication Publication Date Title
JP5964511B2 (ja) オフセットビア(vias)を有する集積回路パッケージ
KR102210975B1 (ko) 반도체 패키지 내의 도전성 비아 및 그 형성 방법
TWI640045B (zh) 半導體裝置及製造方法
CN113113381B (zh) 封装结构及其形成方法
CN109148308B (zh) 封装件及其形成方法
US11257767B2 (en) Interconnect crack arrestor structure and methods
US9812429B2 (en) Interconnect structures for assembly of multi-layer semiconductor devices
CN113380746B (zh) 半导体器件和结构及其制造方法
US9299649B2 (en) 3D packages and methods for forming the same
CN106328602B (zh) 封装件结构
CN111261608B (zh) 半导体器件及其形成方法
CN102208384B (zh) 半导体结构及半导体装置的形成方法
CN110957279B (zh) 半导体器件及其形成方法
CN107342277A (zh) 封装件及其形成方法
US20190164920A1 (en) Semiconductor device with bump structure and method of making semiconductor device
TWI795187B (zh) 半導體封裝結構及其形成方法
CN113675163A (zh) 半导体器件及其制造方法
KR102481141B1 (ko) 반도체 패키징된 디바이스 내의 본딩 구조물 및 그 형성 방법
US9431370B2 (en) Compliant dielectric layer for semiconductor device
CN116741730A (zh) 半导体器件及其形成方法
CN115249682A (zh) 封装结构及其形成方法
CN111223821B (zh) 半导体器件封装件和半导体结构
CN120015631A (zh) 封装件及其形成方法
CN120767208A (zh) 封装件及其形成方法
KR20150088440A (ko) 범프 구조물, 그 제조방법 및 이를 포함하는 반도체 패키지

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150309

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20150309

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20150604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150908

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160502

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160513

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160531

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160629

R150 Certificate of patent or registration of utility model

Ref document number: 5964511

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250