IN2014DN10923A - - Google Patents

Info

Publication number
IN2014DN10923A
IN2014DN10923A IN10923DEN2014A IN2014DN10923A IN 2014DN10923 A IN2014DN10923 A IN 2014DN10923A IN 10923DEN2014 A IN10923DEN2014 A IN 10923DEN2014A IN 2014DN10923 A IN2014DN10923 A IN 2014DN10923A
Authority
IN
India
Prior art keywords
semiconductor chip
pad
substrate
extends
integrated circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Michael Zhuoying Su
Fu Lei
Frank Kuechenmeister
Original Assignee
Advanced Micro Devices Inc
Michael Zhuoying Su
Frank Kuechenmeister
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Michael Zhuoying Su, Frank Kuechenmeister filed Critical Advanced Micro Devices Inc
Publication of IN2014DN10923A publication Critical patent/IN2014DN10923A/en

Links

Classifications

    • H10W74/147
    • H10W72/012
    • H10W72/019
    • H10W72/20
    • H10W72/90
    • H10W20/082
    • H10W42/121
    • H10W72/01235
    • H10W72/01255
    • H10W72/01935
    • H10W72/0198
    • H10W72/072
    • H10W72/07236
    • H10W72/227
    • H10W72/234
    • H10W72/237
    • H10W72/241
    • H10W72/242
    • H10W72/244
    • H10W72/247
    • H10W72/248
    • H10W72/252
    • H10W72/29
    • H10W72/926
    • H10W72/934
    • H10W72/936
    • H10W72/9415
    • H10W72/9445
    • H10W72/952
    • H10W74/15
    • H10W90/724

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
IN10923DEN2014 2012-06-25 2013-06-25 IN2014DN10923A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/532,126 US8624404B1 (en) 2012-06-25 2012-06-25 Integrated circuit package having offset vias
PCT/US2013/047634 WO2014004520A1 (en) 2012-06-25 2013-06-25 Integrated circuit package having offset vias

Publications (1)

Publication Number Publication Date
IN2014DN10923A true IN2014DN10923A (enExample) 2015-09-18

Family

ID=49773740

Family Applications (1)

Application Number Title Priority Date Filing Date
IN10923DEN2014 IN2014DN10923A (enExample) 2012-06-25 2013-06-25

Country Status (7)

Country Link
US (1) US8624404B1 (enExample)
EP (1) EP2865006A4 (enExample)
JP (1) JP5964511B2 (enExample)
KR (1) KR101569162B1 (enExample)
CN (2) CN110060977A (enExample)
IN (1) IN2014DN10923A (enExample)
WO (1) WO2014004520A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6180801B2 (ja) * 2013-06-07 2017-08-16 ルネサスエレクトロニクス株式会社 半導体装置
JP6221499B2 (ja) * 2013-08-19 2017-11-01 富士通株式会社 電子装置及び電子装置の製造方法
US10096639B2 (en) * 2016-10-10 2018-10-09 Sensors Unlimited, Inc. Bump structures for interconnecting focal plane arrays
DE102017128568A1 (de) * 2017-12-01 2019-06-06 Infineon Technologies Ag Halbleiterchip mit einer vielzahl von externen kontakten, chip-anordnung und verfahren zum überprüfen einer ausrichtung einer position eines halbleiterchips
US10497657B1 (en) * 2018-06-13 2019-12-03 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN109004080B (zh) * 2018-08-10 2024-08-06 浙江熔城半导体有限公司 带有延伸双围堰及焊锡的芯片封装结构及其制作方法
KR102822948B1 (ko) * 2020-08-12 2025-06-20 삼성전자주식회사 배선 구조물 및 이를 포함하는 반도체 칩
US20230029763A1 (en) * 2021-07-30 2023-02-02 Cree, Inc. Interconnect metal openings through dielectric films
CN117059583B (zh) * 2023-10-12 2024-01-09 江苏芯德半导体科技有限公司 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法
US12489073B1 (en) 2024-11-15 2025-12-02 Globalfoundries U.S. Inc. Acentric non-round electrical interconnections

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305530A (ja) * 1987-06-05 1988-12-13 Hitachi Ltd 半導体装置の製造方法
KR950001962A (ko) * 1993-06-30 1995-01-04 김광호 반도체 칩 범프
JP3217624B2 (ja) * 1994-11-12 2001-10-09 東芝マイクロエレクトロニクス株式会社 半導体装置
US6107109A (en) * 1997-12-18 2000-08-22 Micron Technology, Inc. Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate
US6075290A (en) * 1998-02-26 2000-06-13 National Semiconductor Corporation Surface mount die: wafer level chip-scale package and process for making the same
JPH11340355A (ja) * 1998-05-25 1999-12-10 Nec Corp 半導体装置
JP3351355B2 (ja) * 1998-09-29 2002-11-25 株式会社デンソー 電子部品の実装構造
WO2000055898A1 (en) * 1999-03-16 2000-09-21 Seiko Epson Corporation Semiconductor device, method of manufacture thereof, circuit board, and electronic device
US6545192B2 (en) 1999-05-11 2003-04-08 Shell Oil Company Process for separating olefins from saturated hydrocarbons
US7034402B1 (en) * 2000-06-28 2006-04-25 Intel Corporation Device with segmented ball limiting metallurgy
US6703069B1 (en) * 2002-09-30 2004-03-09 Intel Corporation Under bump metallurgy for lead-tin bump over copper pad
JP4181510B2 (ja) * 2003-02-28 2008-11-19 日本特殊陶業株式会社 樹脂製配線基板
JP2005012065A (ja) * 2003-06-20 2005-01-13 Renesas Technology Corp 半導体装置およびその製造方法
TWI220308B (en) * 2003-08-07 2004-08-11 Advanced Semiconductor Eng Under bump metallurgic layer
US7197727B1 (en) 2003-11-04 2007-03-27 Advanced Micro Devices, Inc. Interconnect speed sensing circuitry
US7095116B1 (en) * 2003-12-01 2006-08-22 National Semiconductor Corporation Aluminum-free under bump metallization structure
US7259458B2 (en) 2004-08-18 2007-08-21 Advanced Micro Devices, Inc. Integrated circuit with increased heat transfer
JP4628731B2 (ja) * 2004-09-24 2011-02-09 株式会社フジクラ 電子部品及び電子装置
JP2006253611A (ja) * 2005-03-14 2006-09-21 Fuji Xerox Co Ltd 基板、誘導構造形成装置及び方法、及び位置決め方法
US20060227237A1 (en) 2005-03-31 2006-10-12 International Business Machines Corporation Video surveillance system and method with combined video and audio recognition
US7206703B1 (en) 2005-05-02 2007-04-17 Advanced Micro Devices, Inc. System and method for testing packaged devices using time domain reflectometry
TWI258176B (en) * 2005-05-12 2006-07-11 Siliconware Precision Industries Co Ltd Semiconductor device and fabrication method thereof
CN100382291C (zh) * 2005-05-17 2008-04-16 矽品精密工业股份有限公司 半导体装置及其制法
JP5050384B2 (ja) * 2006-03-31 2012-10-17 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US20080124840A1 (en) 2006-07-31 2008-05-29 Su Michael Z Electrical Insulating Layer for Metallic Thermal Interface Material
US7616021B2 (en) 2007-01-18 2009-11-10 Advanced Micro Devices, Inc. Method and device for determining an operational lifetime of an integrated circuit device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
US8344505B2 (en) 2007-08-29 2013-01-01 Ati Technologies Ulc Wafer level packaging of semiconductor chips
US7679200B2 (en) 2007-09-11 2010-03-16 Globalfoundries Inc. Semiconductor chip with crack stop
US7812438B2 (en) * 2008-01-07 2010-10-12 International Business Machines Corporation Via offsetting to reduce stress under the first level interconnect (FLI) in microelectronics packaging
US20090278263A1 (en) * 2008-05-09 2009-11-12 Texas Instruments Incorporated Reliability wcsp layouts
US7737563B2 (en) 2008-06-04 2010-06-15 Globalfoundries Inc. Semiconductor chip with reinforcement structure
US8212357B2 (en) * 2008-08-08 2012-07-03 International Business Machines Corporation Combination via and pad structure for improved solder bump electromigration characteristics
US8293581B2 (en) 2009-02-18 2012-10-23 Globalfoundries Inc. Semiconductor chip with protective scribe structure
US7897433B2 (en) 2009-02-18 2011-03-01 Advanced Micro Devices, Inc. Semiconductor chip with reinforcement layer and method of making the same
US8072071B2 (en) * 2009-02-19 2011-12-06 Infineon Technologies Ag Semiconductor device including conductive element
US8198133B2 (en) * 2009-07-13 2012-06-12 International Business Machines Corporation Structures and methods to improve lead-free C4 interconnect reliability
US7977160B2 (en) 2009-08-10 2011-07-12 GlobalFoundries, Inc. Semiconductor devices having stress relief layers and methods for fabricating the same
US8269348B2 (en) * 2010-02-22 2012-09-18 Texas Instruments Incorporated IC die including RDL capture pads with notch having bonding connectors or its UBM pad over the notch
TWI478303B (zh) * 2010-09-27 2015-03-21 日月光半導體製造股份有限公司 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構

Also Published As

Publication number Publication date
JP5964511B2 (ja) 2016-08-03
CN104956479A (zh) 2015-09-30
CN110060977A (zh) 2019-07-26
US8624404B1 (en) 2014-01-07
EP2865006A1 (en) 2015-04-29
JP2015525968A (ja) 2015-09-07
KR101569162B1 (ko) 2015-11-13
US20130341802A1 (en) 2013-12-26
EP2865006A4 (en) 2016-03-23
KR20150016641A (ko) 2015-02-12
WO2014004520A1 (en) 2014-01-03

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