CN104955981B - 磁记录膜用溅射靶及用于制造该溅射靶的碳原料 - Google Patents

磁记录膜用溅射靶及用于制造该溅射靶的碳原料 Download PDF

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Publication number
CN104955981B
CN104955981B CN201480006305.1A CN201480006305A CN104955981B CN 104955981 B CN104955981 B CN 104955981B CN 201480006305 A CN201480006305 A CN 201480006305A CN 104955981 B CN104955981 B CN 104955981B
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China
Prior art keywords
powder
sputtering target
particle
sputter face
target
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CN201480006305.1A
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English (en)
Chinese (zh)
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CN104955981A (zh
Inventor
荻野真
荻野真一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
CN201480006305.1A 2013-04-26 2014-04-24 磁记录膜用溅射靶及用于制造该溅射靶的碳原料 Active CN104955981B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-094300 2013-04-26
JP2013094300 2013-04-26
PCT/JP2014/061594 WO2014175392A1 (ja) 2013-04-26 2014-04-24 磁気記録膜用スパッタリングターゲット及びその製造に用いる炭素原料

Publications (2)

Publication Number Publication Date
CN104955981A CN104955981A (zh) 2015-09-30
CN104955981B true CN104955981B (zh) 2018-01-23

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CN201480006305.1A Active CN104955981B (zh) 2013-04-26 2014-04-24 磁记录膜用溅射靶及用于制造该溅射靶的碳原料

Country Status (6)

Country Link
JP (1) JP5876155B2 (ja)
CN (1) CN104955981B (ja)
MY (1) MY175409A (ja)
SG (1) SG11201506097YA (ja)
TW (1) TWI595103B (ja)
WO (1) WO2014175392A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108699679B (zh) * 2016-03-07 2020-09-29 田中贵金属工业株式会社 FePt-C系溅射靶
WO2021085410A1 (ja) * 2019-11-01 2021-05-06 田中貴金属工業株式会社 熱アシスト磁気記録媒体用スパッタリングターゲット
JP7483999B1 (ja) 2023-09-22 2024-05-15 Jx金属株式会社 スパッタリングターゲット及びスパッタリングターゲット組立品

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101220457A (zh) * 2007-01-08 2008-07-16 贺利氏公司 溅射靶和制造具有多种材料的溅射靶的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012020A (ja) * 1998-06-23 2000-01-14 Nippon Steel Corp リチウム二次電池負極用炭素材料
KR100470151B1 (ko) * 2002-10-29 2005-02-05 한국과학기술원 FePtC 박막을 이용한 고밀도 자기기록매체 및 그제조방법
JP5428561B2 (ja) * 2009-06-16 2014-02-26 株式会社Gsユアサ 直接形燃料電池システム及びその運転停止方法
JP5678414B2 (ja) * 2009-06-17 2015-03-04 三菱化学株式会社 黒鉛負極材料及びその製造方法、並びにそれを用いたリチウム二次電池用負極及びリチウム二次電池
JP5290468B2 (ja) * 2010-12-20 2013-09-18 Jx日鉱日石金属株式会社 C粒子が分散したFe−Pt系スパッタリングターゲット
CN103459656B (zh) * 2011-03-30 2015-05-06 吉坤日矿日石金属株式会社 磁记录膜用溅射靶
JP5912559B2 (ja) * 2011-03-30 2016-04-27 田中貴金属工業株式会社 FePt−C系スパッタリングターゲットの製造方法
JP6037197B2 (ja) * 2011-05-09 2016-12-07 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101220457A (zh) * 2007-01-08 2008-07-16 贺利氏公司 溅射靶和制造具有多种材料的溅射靶的方法

Also Published As

Publication number Publication date
CN104955981A (zh) 2015-09-30
MY175409A (en) 2020-06-24
SG11201506097YA (en) 2015-09-29
JP5876155B2 (ja) 2016-03-02
WO2014175392A1 (ja) 2014-10-30
TW201508074A (zh) 2015-03-01
TWI595103B (zh) 2017-08-11
JPWO2014175392A1 (ja) 2017-02-23

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