CN104934511A - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN104934511A
CN104934511A CN201510107845.5A CN201510107845A CN104934511A CN 104934511 A CN104934511 A CN 104934511A CN 201510107845 A CN201510107845 A CN 201510107845A CN 104934511 A CN104934511 A CN 104934511A
Authority
CN
China
Prior art keywords
electrode
layer
semiconductor layer
semiconductor
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510107845.5A
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English (en)
Chinese (zh)
Inventor
伊藤俊秀
大野浩志
布上真也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN104934511A publication Critical patent/CN104934511A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
CN201510107845.5A 2014-03-17 2015-03-12 半导体发光元件 Pending CN104934511A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014054157A JP6302303B2 (ja) 2014-03-17 2014-03-17 半導体発光素子
JP2014-054157 2014-03-17

Publications (1)

Publication Number Publication Date
CN104934511A true CN104934511A (zh) 2015-09-23

Family

ID=52577783

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510107845.5A Pending CN104934511A (zh) 2014-03-17 2015-03-12 半导体发光元件

Country Status (6)

Country Link
US (1) US20150263223A1 (enExample)
EP (1) EP2922102A1 (enExample)
JP (1) JP6302303B2 (enExample)
KR (1) KR20150108315A (enExample)
CN (1) CN104934511A (enExample)
TW (1) TW201547055A (enExample)

Cited By (1)

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CN108063173A (zh) * 2016-11-09 2018-05-22 晶元光电股份有限公司 发光元件及其制造方法

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WO2016043748A1 (en) * 2014-09-18 2016-03-24 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon cmos-compatible semiconductor devices
US10229991B2 (en) 2014-09-25 2019-03-12 Intel Corporation III-N epitaxial device structures on free standing silicon mesas
CN107078098B (zh) 2014-11-18 2021-04-06 英特尔公司 使用n沟道和p沟道氮化镓晶体管的cmos电路
KR102309482B1 (ko) 2014-12-18 2021-10-07 인텔 코포레이션 N-채널 갈륨 질화물 트랜지스터들
US10211327B2 (en) 2015-05-19 2019-02-19 Intel Corporation Semiconductor devices with raised doped crystalline structures
EP3314659A4 (en) 2015-06-26 2019-01-23 INTEL Corporation HETEROEPITAXISTRUCTURES WITH HIGH-TEMPERATURE-RESISTANT SUBSTRATE INTERMEDIATE MATERIAL
US10658471B2 (en) 2015-12-24 2020-05-19 Intel Corporation Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
KR102530760B1 (ko) * 2016-07-18 2023-05-11 삼성전자주식회사 반도체 발광소자
WO2019066935A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING THE SAME
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Citations (4)

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US20090065900A1 (en) * 2007-07-27 2009-03-12 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor device
US20090095973A1 (en) * 2007-09-27 2009-04-16 Rohm Co., Ltd. Semiconductor light emitting device
CN102332512A (zh) * 2010-07-12 2012-01-25 Lg伊诺特有限公司 发光器件
US20120168712A1 (en) * 2010-12-29 2012-07-05 Lextar Electronics Corporation High bright light emitting diode

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JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4925580B2 (ja) * 2004-12-28 2012-04-25 三菱化学株式会社 窒化物半導体発光素子およびその製造方法
WO2006123580A1 (ja) * 2005-05-19 2006-11-23 Matsushita Electric Industrial Co., Ltd. 窒化物半導体装置及びその製造方法
JP5333382B2 (ja) * 2010-08-27 2013-11-06 豊田合成株式会社 発光素子
TWI532214B (zh) * 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
KR20140007348A (ko) * 2010-12-28 2014-01-17 도와 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
JP5983125B2 (ja) * 2012-07-18 2016-08-31 日亜化学工業株式会社 半導体発光素子の製造方法
JP6052962B2 (ja) * 2012-08-03 2016-12-27 スタンレー電気株式会社 半導体発光装置
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065900A1 (en) * 2007-07-27 2009-03-12 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor device
US20090095973A1 (en) * 2007-09-27 2009-04-16 Rohm Co., Ltd. Semiconductor light emitting device
CN102332512A (zh) * 2010-07-12 2012-01-25 Lg伊诺特有限公司 发光器件
US20120168712A1 (en) * 2010-12-29 2012-07-05 Lextar Electronics Corporation High bright light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108063173A (zh) * 2016-11-09 2018-05-22 晶元光电股份有限公司 发光元件及其制造方法
CN108063173B (zh) * 2016-11-09 2021-10-22 晶元光电股份有限公司 发光元件及其制造方法

Also Published As

Publication number Publication date
US20150263223A1 (en) 2015-09-17
TW201547055A (zh) 2015-12-16
EP2922102A1 (en) 2015-09-23
KR20150108315A (ko) 2015-09-25
JP6302303B2 (ja) 2018-03-28
JP2015177135A (ja) 2015-10-05

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