JP6302303B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP6302303B2
JP6302303B2 JP2014054157A JP2014054157A JP6302303B2 JP 6302303 B2 JP6302303 B2 JP 6302303B2 JP 2014054157 A JP2014054157 A JP 2014054157A JP 2014054157 A JP2014054157 A JP 2014054157A JP 6302303 B2 JP6302303 B2 JP 6302303B2
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Japan
Prior art keywords
light emitting
semiconductor
layer
electrode
region
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Active
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JP2014054157A
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English (en)
Japanese (ja)
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JP2015177135A (ja
JP2015177135A5 (enExample
Inventor
俊秀 伊藤
俊秀 伊藤
浩志 大野
浩志 大野
布上　真也
真也 布上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2014054157A priority Critical patent/JP6302303B2/ja
Priority to TW104106325A priority patent/TW201547055A/zh
Priority to US14/632,131 priority patent/US20150263223A1/en
Priority to EP15156997.7A priority patent/EP2922102A1/en
Priority to KR1020150031582A priority patent/KR20150108315A/ko
Priority to CN201510107845.5A priority patent/CN104934511A/zh
Publication of JP2015177135A publication Critical patent/JP2015177135A/ja
Publication of JP2015177135A5 publication Critical patent/JP2015177135A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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JP2014054157A 2014-03-17 2014-03-17 半導体発光素子 Active JP6302303B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014054157A JP6302303B2 (ja) 2014-03-17 2014-03-17 半導体発光素子
TW104106325A TW201547055A (zh) 2014-03-17 2015-02-26 半導體發光元件
US14/632,131 US20150263223A1 (en) 2014-03-17 2015-02-26 Semiconductor light emitting element
EP15156997.7A EP2922102A1 (en) 2014-03-17 2015-02-27 Semiconductor light emitting element
KR1020150031582A KR20150108315A (ko) 2014-03-17 2015-03-06 반도체 발광 소자
CN201510107845.5A CN104934511A (zh) 2014-03-17 2015-03-12 半导体发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014054157A JP6302303B2 (ja) 2014-03-17 2014-03-17 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2015177135A JP2015177135A (ja) 2015-10-05
JP2015177135A5 JP2015177135A5 (enExample) 2017-03-02
JP6302303B2 true JP6302303B2 (ja) 2018-03-28

Family

ID=52577783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014054157A Active JP6302303B2 (ja) 2014-03-17 2014-03-17 半導体発光素子

Country Status (6)

Country Link
US (1) US20150263223A1 (enExample)
EP (1) EP2922102A1 (enExample)
JP (1) JP6302303B2 (enExample)
KR (1) KR20150108315A (enExample)
CN (1) CN104934511A (enExample)
TW (1) TW201547055A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017533574A (ja) 2014-09-18 2017-11-09 インテル・コーポレーション シリコンｃｍｏｓ互換性半導体装置における欠陥伝播制御のための傾斜側壁カット面を有するウルツ鉱ヘテロエピタキシャル構造物
JP6376575B2 (ja) 2014-09-25 2018-08-22 インテル・コーポレーション 自立シリコンメサ上のｉｉｉ−ｎエピタキシャル素子構造
US10573647B2 (en) 2014-11-18 2020-02-25 Intel Corporation CMOS circuits using n-channel and p-channel gallium nitride transistors
CN106922200B (zh) 2014-12-18 2021-11-09 英特尔公司 N沟道氮化镓晶体管
EP3298628A4 (en) 2015-05-19 2019-05-22 INTEL Corporation SEMICONDUCTOR COMPONENTS WITH INCREASED DOTED CRYSTALLINE STRUCTURES
WO2016209283A1 (en) 2015-06-26 2016-12-29 Intel Corporation Heteroepitaxial structures with high temperature stable substrate interface material
WO2017111869A1 (en) 2015-12-24 2017-06-29 Intel Corporation Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
KR102530760B1 (ko) * 2016-07-18 2023-05-11 삼성전자주식회사 반도체 발광소자
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
WO2019066953A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING SAME
US12125888B2 (en) 2017-09-29 2024-10-22 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4925580B2 (ja) * 2004-12-28 2012-04-25 三菱化学株式会社 窒化物半導体発光素子およびその製造方法
CN100477425C (zh) * 2005-05-19 2009-04-08 松下电器产业株式会社 氮化物半导体装置及其制造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
KR101761385B1 (ko) * 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
JP5333382B2 (ja) * 2010-08-27 2013-11-06 豊田合成株式会社 発光素子
TWI532214B (zh) * 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
WO2012090252A1 (ja) * 2010-12-28 2012-07-05 Ｄｏｗａエレクトロニクス株式会社 半導体装置及びその製造方法
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
JP5983125B2 (ja) * 2012-07-18 2016-08-31 日亜化学工業株式会社 半導体発光素子の製造方法
JP6052962B2 (ja) * 2012-08-03 2016-12-27 スタンレー電気株式会社 半導体発光装置
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子

Also Published As

Publication number Publication date
JP2015177135A (ja) 2015-10-05
US20150263223A1 (en) 2015-09-17
KR20150108315A (ko) 2015-09-25
EP2922102A1 (en) 2015-09-23
CN104934511A (zh) 2015-09-23
TW201547055A (zh) 2015-12-16

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