CN104916316A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN104916316A CN104916316A CN201410453807.0A CN201410453807A CN104916316A CN 104916316 A CN104916316 A CN 104916316A CN 201410453807 A CN201410453807 A CN 201410453807A CN 104916316 A CN104916316 A CN 104916316A
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- transistor
- memory cell
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- 101100058964 Arabidopsis thaliana CALS5 gene Proteins 0.000 description 4
- 101100186130 Arabidopsis thaliana NAC052 gene Proteins 0.000 description 4
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- 101100203178 Drosophila melanogaster Sgs4 gene Proteins 0.000 description 4
- 101100203168 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SGS1 gene Proteins 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
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- -1 Metal Oxide Nitride Chemical class 0.000 description 2
- 101710186414 N-succinylglutamate 5-semialdehyde dehydrogenase Proteins 0.000 description 2
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- 101100422777 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SUR1 gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014052079A JP2015177002A (ja) | 2014-03-14 | 2014-03-14 | 半導体記憶装置 |
JP2014-052079 | 2014-03-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104916316A true CN104916316A (zh) | 2015-09-16 |
CN104916316B CN104916316B (zh) | 2019-02-12 |
Family
ID=54069552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410453807.0A Active CN104916316B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9437300B2 (zh) |
JP (1) | JP2015177002A (zh) |
CN (1) | CN104916316B (zh) |
TW (1) | TWI567947B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768378A (zh) * | 2016-08-18 | 2018-03-06 | 东芝存储器株式会社 | 半导体装置 |
CN108109657A (zh) * | 2016-11-25 | 2018-06-01 | 东芝存储器株式会社 | 半导体装置及其工作方法 |
CN110190059A (zh) * | 2018-02-23 | 2019-08-30 | 东芝存储器株式会社 | 半导体存储装置及半导体存储装置的控制方法 |
CN110739011A (zh) * | 2018-07-18 | 2020-01-31 | 东芝存储器株式会社 | 半导体存储装置 |
CN112436017A (zh) * | 2019-08-26 | 2021-03-02 | 铠侠股份有限公司 | 半导体装置及其制造方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236127B2 (en) * | 2013-10-11 | 2016-01-12 | Conversant Intellectual Property Management Inc. | Nonvolatile semiconductor memory device |
KR20160097002A (ko) * | 2015-02-06 | 2016-08-17 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
CN105304133A (zh) * | 2015-09-25 | 2016-02-03 | 北京兆易创新科技股份有限公司 | 一种3D NAND flash的电压控制方法和装置 |
KR102381046B1 (ko) * | 2015-10-26 | 2022-03-31 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 |
JP6441250B2 (ja) | 2016-03-15 | 2018-12-19 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2018046059A (ja) * | 2016-09-12 | 2018-03-22 | 東芝メモリ株式会社 | 半導体装置 |
US10395723B2 (en) * | 2017-03-07 | 2019-08-27 | Toshiba Memory Corporation | Memory system that differentiates voltages applied to word lines |
KR20180113227A (ko) | 2017-04-05 | 2018-10-16 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
JP2019192869A (ja) * | 2018-04-27 | 2019-10-31 | 東芝メモリ株式会社 | 半導体記憶装置 |
KR102616813B1 (ko) * | 2018-05-24 | 2023-12-26 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
JP2020031149A (ja) * | 2018-08-23 | 2020-02-27 | キオクシア株式会社 | 半導体メモリ及び半導体メモリの製造方法 |
JP2020155611A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
US11069399B2 (en) | 2019-06-03 | 2021-07-20 | Samsung Electronics Co., Ltd. | 3-dimensional memory device |
KR20210129364A (ko) | 2020-04-20 | 2021-10-28 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
JP2021182457A (ja) * | 2020-05-18 | 2021-11-25 | キオクシア株式会社 | 半導体記憶装置 |
US11423990B2 (en) * | 2020-08-11 | 2022-08-23 | Micron Technology, Inc. | Multi-stage erase operation for a memory device |
JP7502122B2 (ja) | 2020-09-09 | 2024-06-18 | キオクシア株式会社 | 半導体装置およびその製造方法 |
KR20220036753A (ko) * | 2020-09-16 | 2022-03-23 | 삼성전자주식회사 | 로우 디코더를 포함하는 메모리 장치 |
KR20220050665A (ko) | 2020-10-16 | 2022-04-25 | 삼성전자주식회사 | 패스 트랜지스터 회로를 포함하는 메모리 장치 |
Citations (4)
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US20040095817A1 (en) * | 2000-10-31 | 2004-05-20 | Kabushiki Kaisha Toshiba | Pattern layout of transfer transistors employed in row decoder |
US20060187737A1 (en) * | 2003-12-26 | 2006-08-24 | Takuya Futatsuyama | Pattern layout of word line transfer transistors in NAND flash memory which executes subblock erase |
CN102262901A (zh) * | 2010-05-31 | 2011-11-30 | 海力士半导体有限公司 | 具有能够减少平面面积的配置的半导体集成电路装置 |
JP2013196750A (ja) * | 2012-03-22 | 2013-09-30 | Toshiba Corp | 半導体記憶装置 |
Family Cites Families (10)
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JP2007242700A (ja) * | 2006-03-06 | 2007-09-20 | Toshiba Corp | 半導体メモリ |
JP5430890B2 (ja) * | 2008-07-25 | 2014-03-05 | 株式会社東芝 | 半導体記憶装置 |
JP5193796B2 (ja) * | 2008-10-21 | 2013-05-08 | 株式会社東芝 | 3次元積層型不揮発性半導体メモリ |
JP5297342B2 (ja) * | 2009-11-02 | 2013-09-25 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5121869B2 (ja) * | 2010-03-23 | 2013-01-16 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
JP2011258289A (ja) | 2010-06-10 | 2011-12-22 | Toshiba Corp | メモリセルの閾値検出方法 |
KR101855437B1 (ko) * | 2010-12-02 | 2018-05-08 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 동작 방법 |
WO2013043602A2 (en) * | 2011-09-19 | 2013-03-28 | SanDisk Technologies, Inc. | High endurance non-volatile storage |
JP5814867B2 (ja) * | 2012-06-27 | 2015-11-17 | 株式会社東芝 | 半導体記憶装置 |
US20140108705A1 (en) * | 2012-10-12 | 2014-04-17 | Sandisk Technologies Inc. | Use of High Endurance Non-Volatile Memory for Read Acceleration |
-
2014
- 2014-03-14 JP JP2014052079A patent/JP2015177002A/ja active Pending
- 2014-07-02 TW TW103122865A patent/TWI567947B/zh active
- 2014-08-26 US US14/469,251 patent/US9437300B2/en active Active
- 2014-09-05 CN CN201410453807.0A patent/CN104916316B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040095817A1 (en) * | 2000-10-31 | 2004-05-20 | Kabushiki Kaisha Toshiba | Pattern layout of transfer transistors employed in row decoder |
US20060187737A1 (en) * | 2003-12-26 | 2006-08-24 | Takuya Futatsuyama | Pattern layout of word line transfer transistors in NAND flash memory which executes subblock erase |
CN102262901A (zh) * | 2010-05-31 | 2011-11-30 | 海力士半导体有限公司 | 具有能够减少平面面积的配置的半导体集成电路装置 |
JP2013196750A (ja) * | 2012-03-22 | 2013-09-30 | Toshiba Corp | 半導体記憶装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768378A (zh) * | 2016-08-18 | 2018-03-06 | 东芝存储器株式会社 | 半导体装置 |
CN108109657A (zh) * | 2016-11-25 | 2018-06-01 | 东芝存储器株式会社 | 半导体装置及其工作方法 |
CN110190059A (zh) * | 2018-02-23 | 2019-08-30 | 东芝存储器株式会社 | 半导体存储装置及半导体存储装置的控制方法 |
CN110190059B (zh) * | 2018-02-23 | 2022-11-25 | 铠侠股份有限公司 | 半导体存储装置及半导体存储装置的控制方法 |
CN110739011A (zh) * | 2018-07-18 | 2020-01-31 | 东芝存储器株式会社 | 半导体存储装置 |
CN110739011B (zh) * | 2018-07-18 | 2023-11-03 | 铠侠股份有限公司 | 半导体存储装置 |
CN112436017A (zh) * | 2019-08-26 | 2021-03-02 | 铠侠股份有限公司 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201535686A (zh) | 2015-09-16 |
JP2015177002A (ja) | 2015-10-05 |
US20150262669A1 (en) | 2015-09-17 |
CN104916316B (zh) | 2019-02-12 |
US9437300B2 (en) | 2016-09-06 |
TWI567947B (zh) | 2017-01-21 |
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Effective date of registration: 20170822 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
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