CN110190059B - 半导体存储装置及半导体存储装置的控制方法 - Google Patents
半导体存储装置及半导体存储装置的控制方法 Download PDFInfo
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- CN110190059B CN110190059B CN201810994146.0A CN201810994146A CN110190059B CN 110190059 B CN110190059 B CN 110190059B CN 201810994146 A CN201810994146 A CN 201810994146A CN 110190059 B CN110190059 B CN 110190059B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018030233A JP2019145191A (ja) | 2018-02-23 | 2018-02-23 | 半導体記憶装置及び半導体記憶装置の制御方法 |
JP2018-030233 | 2018-02-23 |
Publications (2)
Publication Number | Publication Date |
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CN110190059A CN110190059A (zh) | 2019-08-30 |
CN110190059B true CN110190059B (zh) | 2022-11-25 |
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Application Number | Title | Priority Date | Filing Date |
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CN201810994146.0A Active CN110190059B (zh) | 2018-02-23 | 2018-08-29 | 半导体存储装置及半导体存储装置的控制方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10424384B2 (zh) |
JP (1) | JP2019145191A (zh) |
CN (1) | CN110190059B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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SG11202105865XA (en) * | 2020-03-09 | 2021-10-28 | Kioxia Corp | Semiconductor memory device and method of manufacturing semiconductor memory device |
JP2021182457A (ja) | 2020-05-18 | 2021-11-25 | キオクシア株式会社 | 半導体記憶装置 |
KR20220046283A (ko) | 2020-10-07 | 2022-04-14 | 삼성전자주식회사 | 반도체 메모리 소자 |
CN116547757A (zh) * | 2020-12-17 | 2023-08-04 | 铠侠股份有限公司 | 半导体存储装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014120191A (ja) * | 2012-12-19 | 2014-06-30 | Lapis Semiconductor Co Ltd | 半導体記憶装置 |
CN104916316A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 半导体存储装置 |
CN104916318A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 非易失性半导体存储装置 |
CN109155140A (zh) * | 2016-04-28 | 2019-01-04 | 美光科技公司 | 存储器单元板之间的电荷共享 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8432732B2 (en) * | 2010-07-09 | 2013-04-30 | Sandisk Technologies Inc. | Detection of word-line leakage in memory arrays |
US8730722B2 (en) * | 2012-03-02 | 2014-05-20 | Sandisk Technologies Inc. | Saving of data in cases of word-line to word-line short in memory arrays |
KR101538071B1 (ko) | 2014-05-30 | 2015-07-21 | 서울대학교산학협력단 | 셀 스트링 및 상기 셀 스트링에서의 읽기 방법 |
KR101556681B1 (ko) | 2014-07-02 | 2015-10-02 | 서울대학교산학협력단 | 셀 스트링에서의 읽기 방법 |
JP6378102B2 (ja) | 2015-01-28 | 2018-08-22 | 東芝メモリ株式会社 | 半導体装置および読み出し方法 |
KR102432483B1 (ko) | 2015-12-31 | 2022-08-12 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 이의 구동 방법 |
KR102663813B1 (ko) * | 2017-01-13 | 2024-05-07 | 삼성전자주식회사 | 최적의 읽기 전압으로 독출하는 불휘발성 메모리 장치 |
-
2018
- 2018-02-23 JP JP2018030233A patent/JP2019145191A/ja active Pending
- 2018-08-27 US US16/114,182 patent/US10424384B2/en active Active
- 2018-08-29 CN CN201810994146.0A patent/CN110190059B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014120191A (ja) * | 2012-12-19 | 2014-06-30 | Lapis Semiconductor Co Ltd | 半導体記憶装置 |
CN104916316A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 半导体存储装置 |
CN104916318A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 非易失性半导体存储装置 |
CN109155140A (zh) * | 2016-04-28 | 2019-01-04 | 美光科技公司 | 存储器单元板之间的电荷共享 |
Also Published As
Publication number | Publication date |
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CN110190059A (zh) | 2019-08-30 |
US20190267097A1 (en) | 2019-08-29 |
US10424384B2 (en) | 2019-09-24 |
JP2019145191A (ja) | 2019-08-29 |
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