CN104718576A - 用于读取电阻性随机访问存储器(rram)单元的系统和方法 - Google Patents
用于读取电阻性随机访问存储器(rram)单元的系统和方法 Download PDFInfo
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- CN104718576A CN104718576A CN201380053672.2A CN201380053672A CN104718576A CN 104718576 A CN104718576 A CN 104718576A CN 201380053672 A CN201380053672 A CN 201380053672A CN 104718576 A CN104718576 A CN 104718576A
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- Prior art keywords
- voltage
- memory cell
- random access
- access memory
- resistive random
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
Abstract
Description
Claims (20)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261713900P | 2012-10-15 | 2012-10-15 | |
US61/713,900 | 2012-10-15 | ||
US14/050,678 US9047945B2 (en) | 2012-10-15 | 2013-10-10 | Systems and methods for reading resistive random access memory (RRAM) cells |
US14/050,678 | 2013-10-10 | ||
PCT/US2013/064811 WO2014062558A1 (en) | 2012-10-15 | 2013-10-14 | Systems and methods for reading resistive random access memory (rram) cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104718576A true CN104718576A (zh) | 2015-06-17 |
CN104718576B CN104718576B (zh) | 2017-05-31 |
Family
ID=50475195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380053672.2A Active CN104718576B (zh) | 2012-10-15 | 2013-10-14 | 用于读取电阻性随机访问存储器(rram)单元的系统和方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9047945B2 (zh) |
CN (1) | CN104718576B (zh) |
TW (1) | TWI603325B (zh) |
WO (1) | WO2014062558A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108475527A (zh) * | 2015-12-22 | 2018-08-31 | Arm有限公司 | 锁存设备和方法 |
CN108733305A (zh) * | 2017-04-13 | 2018-11-02 | 旺宏电子股份有限公司 | 存储器装置、系统及其操作方法 |
CN109584922A (zh) * | 2017-09-28 | 2019-04-05 | 上海磁宇信息科技有限公司 | 一种用于磁性随机存储器中参照磁性隧道结单元筛选方法 |
CN109671456A (zh) * | 2018-12-24 | 2019-04-23 | 江苏时代全芯存储科技有限公司 | 记忆体装置 |
CN110289033A (zh) * | 2018-03-19 | 2019-09-27 | 东芝存储器株式会社 | 磁存储装置 |
CN113646840A (zh) * | 2019-09-12 | 2021-11-12 | 合肥睿科微电子有限公司 | 随机存取存储器单元的电压模式位线预充电 |
CN114981890A (zh) * | 2019-12-18 | 2022-08-30 | 美光科技公司 | 具有自动预充电的存储器存取 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9042159B2 (en) | 2012-10-15 | 2015-05-26 | Marvell World Trade Ltd. | Configuring resistive random access memory (RRAM) array for write operations |
US8885388B2 (en) | 2012-10-24 | 2014-11-11 | Marvell World Trade Ltd. | Apparatus and method for reforming resistive memory cells |
WO2014070852A1 (en) | 2012-10-31 | 2014-05-08 | Marvell World Trade Ltd. | Sram cells suitable for fin field-effect transistor (finfet) process |
CN105190760B (zh) | 2012-11-12 | 2018-04-24 | 马维尔国际贸易有限公司 | 在存储器系统中并行地使用具有nmos通过门和pmos通过门两者的sram单元 |
US20160093624A1 (en) | 2014-09-25 | 2016-03-31 | Kilopass Technology, Inc. | Thyristor Volatile Random Access Memory and Methods of Manufacture |
US9530482B2 (en) | 2014-09-25 | 2016-12-27 | Kilopass Technology, Inc. | Methods of retaining and refreshing data in a thyristor random access memory |
US9449669B2 (en) | 2014-09-25 | 2016-09-20 | Kilopass Technology, Inc. | Cross-coupled thyristor SRAM circuits and methods of operation |
US9741413B2 (en) | 2014-09-25 | 2017-08-22 | Kilopass Technology, Inc. | Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells |
US9564199B2 (en) | 2014-09-25 | 2017-02-07 | Kilopass Technology, Inc. | Methods of reading and writing data in a thyristor random access memory |
US9564441B2 (en) | 2014-09-25 | 2017-02-07 | Kilopass Technology, Inc. | Two-transistor SRAM semiconductor structure and methods of fabrication |
US9460771B2 (en) * | 2014-09-25 | 2016-10-04 | Kilopass Technology, Inc. | Two-transistor thyristor SRAM circuit and methods of operation |
US9613968B2 (en) | 2014-09-25 | 2017-04-04 | Kilopass Technology, Inc. | Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication |
KR102204389B1 (ko) * | 2015-01-06 | 2021-01-18 | 삼성전자주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법 |
US9779788B1 (en) * | 2015-08-24 | 2017-10-03 | Ambiq Micro, Inc. | Sub-threshold enabled flash memory system |
WO2018063308A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Two transistor, one resistor non-volatile gain cell memory and storage element |
US10269414B2 (en) * | 2017-05-09 | 2019-04-23 | Arm Ltd. | Bit-line sensing for correlated electron switch elements |
US10943652B2 (en) | 2018-05-22 | 2021-03-09 | The Regents Of The University Of Michigan | Memory processing unit |
TWI717118B (zh) * | 2019-11-22 | 2021-01-21 | 華邦電子股份有限公司 | 電阻式隨機存取記憶體及其製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1450457A (zh) * | 2003-04-16 | 2003-10-22 | 复旦大学 | 采用改进时序的低功耗组相联高速缓冲存储器 |
CN1574077A (zh) * | 2003-06-17 | 2005-02-02 | 夏普株式会社 | 非易失性半导体存储装置及其写入方法和删除方法 |
CN1881469A (zh) * | 2005-04-14 | 2006-12-20 | 奥沃尼克斯股份有限公司 | 不用触发重置单元阈值装置读取相变存储器 |
US7570524B2 (en) * | 2005-03-30 | 2009-08-04 | Ovonyx, Inc. | Circuitry for reading phase change memory cells having a clamping circuit |
US20120063196A1 (en) * | 2010-09-14 | 2012-03-15 | Samsung Electronics Co., Ltd. | Resistive memory device and method of controlling refresh operation of resistive memory device |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2739380A1 (de) | 1977-09-01 | 1979-03-08 | Boehringer Mannheim Gmbh | N-substituierte 2-hydrazono-propionsaeure-derivate, verfahren zur herstellung derselben und arzneimittel, die diese enthalten |
JPH05325557A (ja) | 1992-05-26 | 1993-12-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5706226A (en) | 1996-12-31 | 1998-01-06 | Sgs-Thomson Microelectronics, Inc. | Low voltage CMOS SRAM |
US6469955B1 (en) * | 2000-11-21 | 2002-10-22 | Integrated Memory Technologies, Inc. | Integrated circuit memory device having interleaved read and program capabilities and methods of operating same |
GB2376781B (en) | 2001-03-29 | 2003-09-24 | Mentor Graphics Corp | Memory device |
US6538917B1 (en) * | 2001-09-25 | 2003-03-25 | Hewlett-Packard Development Company, L.P. | Read methods for magneto-resistive device having soft reference layer |
JP4190836B2 (ja) * | 2002-08-30 | 2008-12-03 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
JP4187148B2 (ja) | 2002-12-03 | 2008-11-26 | シャープ株式会社 | 半導体記憶装置のデータ書き込み制御方法 |
JP4290457B2 (ja) | 2003-03-31 | 2009-07-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US6870784B2 (en) * | 2003-05-28 | 2005-03-22 | Micron Technology, Inc. | Integrated charge sensing scheme for resistive memories |
US7656190B2 (en) | 2003-12-24 | 2010-02-02 | Tier Logic, Inc | Incrementer based on carry chain compression |
US7466597B2 (en) * | 2004-09-09 | 2008-12-16 | Samsung Electronics Co., Ltd. | NAND flash memory device and copyback program method for same |
DE102004047666B4 (de) | 2004-09-30 | 2015-04-02 | Qimonda Ag | Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung |
US7495944B2 (en) * | 2005-03-30 | 2009-02-24 | Ovonyx, Inc. | Reading phase change memories |
KR100626392B1 (ko) * | 2005-04-01 | 2006-09-20 | 삼성전자주식회사 | 읽기 속도를 향상시킬 수 있는 플래시 메모리 장치 |
US8000127B2 (en) | 2009-08-12 | 2011-08-16 | Nantero, Inc. | Method for resetting a resistive change memory element |
JPWO2007138646A1 (ja) | 2006-05-25 | 2009-10-01 | 株式会社日立製作所 | 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置 |
JP2008146740A (ja) | 2006-12-08 | 2008-06-26 | Sharp Corp | 半導体記憶装置 |
KR100855585B1 (ko) | 2007-01-23 | 2008-09-01 | 삼성전자주식회사 | 소오스 라인 공유구조를 갖는 저항성 랜덤 억세스 메모리및 그에 따른 데이터 억세스 방법 |
WO2008142732A1 (ja) | 2007-05-18 | 2008-11-27 | Fujitsu Microelectronics Limited | 半導体メモリ |
EP2063467B1 (en) | 2007-06-05 | 2011-05-04 | Panasonic Corporation | Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |
US8068367B2 (en) | 2007-06-15 | 2011-11-29 | Micron Technology, Inc. | Reference current sources |
JP2009026382A (ja) | 2007-07-19 | 2009-02-05 | Hitachi Ltd | 半導体記憶装置 |
JP5043942B2 (ja) | 2007-07-25 | 2012-10-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP4356786B2 (ja) | 2007-12-12 | 2009-11-04 | ソニー株式会社 | 記憶装置および情報再記録方法 |
KR20090126587A (ko) * | 2008-06-04 | 2009-12-09 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 읽기 방법 |
US7881096B2 (en) | 2008-10-08 | 2011-02-01 | Seagate Technology Llc | Asymmetric write current compensation |
CN101933096A (zh) | 2008-10-21 | 2010-12-29 | 松下电器产业株式会社 | 非易失性存储装置及向其存储单元的写入方法 |
US7852661B2 (en) | 2008-10-22 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Write-assist SRAM cell |
US7974117B2 (en) | 2008-10-30 | 2011-07-05 | Seagate Technology Llc | Non-volatile memory cell with programmable unipolar switching element |
US7944730B2 (en) | 2008-10-31 | 2011-05-17 | Seagate Technology Llc | Write method with voltage line tuning |
JP5287197B2 (ja) | 2008-12-09 | 2013-09-11 | ソニー株式会社 | 半導体装置 |
US8243541B2 (en) | 2008-12-19 | 2012-08-14 | Oracle America, Inc. | Methods and apparatuses for improving reduced power operations in embedded memory arrays |
US8164945B2 (en) | 2009-05-21 | 2012-04-24 | Texas Instruments Incorporated | 8T SRAM cell with two single sided ports |
US8159863B2 (en) | 2009-05-21 | 2012-04-17 | Texas Instruments Incorporated | 6T SRAM cell with single sided write |
US8274130B2 (en) * | 2009-10-20 | 2012-09-25 | Sandisk 3D Llc | Punch-through diode steering element |
TWI455129B (zh) | 2010-07-16 | 2014-10-01 | Univ Nat Chiao Tung | 以史密特觸發器為基礎的鰭狀場效電晶體靜態隨機存取記憶體 |
US8451652B2 (en) | 2010-12-02 | 2013-05-28 | Lsi Corporation | Write assist static random access memory cell |
US8441842B2 (en) | 2010-12-21 | 2013-05-14 | Lsi Corporation | Memory device having memory cells with enhanced low voltage write capability |
US8942024B2 (en) | 2011-12-06 | 2015-01-27 | Agency For Science, Technology And Research | Circuit arrangement and a method of writing states to a memory cell |
US8760927B2 (en) | 2012-01-17 | 2014-06-24 | Texas Instruments Incorporated | Efficient static random-access memory layout |
US8817528B2 (en) | 2012-08-17 | 2014-08-26 | Globalfoundries Inc. | Device comprising a plurality of static random access memory cells and method of operation thereof |
US9042159B2 (en) | 2012-10-15 | 2015-05-26 | Marvell World Trade Ltd. | Configuring resistive random access memory (RRAM) array for write operations |
US8885388B2 (en) | 2012-10-24 | 2014-11-11 | Marvell World Trade Ltd. | Apparatus and method for reforming resistive memory cells |
WO2014070852A1 (en) | 2012-10-31 | 2014-05-08 | Marvell World Trade Ltd. | Sram cells suitable for fin field-effect transistor (finfet) process |
CN105190760B (zh) | 2012-11-12 | 2018-04-24 | 马维尔国际贸易有限公司 | 在存储器系统中并行地使用具有nmos通过门和pmos通过门两者的sram单元 |
-
2013
- 2013-10-10 US US14/050,678 patent/US9047945B2/en active Active
- 2013-10-14 WO PCT/US2013/064811 patent/WO2014062558A1/en active Application Filing
- 2013-10-14 CN CN201380053672.2A patent/CN104718576B/zh active Active
- 2013-10-15 TW TW102137130A patent/TWI603325B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1450457A (zh) * | 2003-04-16 | 2003-10-22 | 复旦大学 | 采用改进时序的低功耗组相联高速缓冲存储器 |
CN1574077A (zh) * | 2003-06-17 | 2005-02-02 | 夏普株式会社 | 非易失性半导体存储装置及其写入方法和删除方法 |
US7570524B2 (en) * | 2005-03-30 | 2009-08-04 | Ovonyx, Inc. | Circuitry for reading phase change memory cells having a clamping circuit |
CN1881469A (zh) * | 2005-04-14 | 2006-12-20 | 奥沃尼克斯股份有限公司 | 不用触发重置单元阈值装置读取相变存储器 |
US20120063196A1 (en) * | 2010-09-14 | 2012-03-15 | Samsung Electronics Co., Ltd. | Resistive memory device and method of controlling refresh operation of resistive memory device |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108475527A (zh) * | 2015-12-22 | 2018-08-31 | Arm有限公司 | 锁存设备和方法 |
CN108475527B (zh) * | 2015-12-22 | 2022-07-26 | Arm有限公司 | 锁存设备和方法 |
CN108733305A (zh) * | 2017-04-13 | 2018-11-02 | 旺宏电子股份有限公司 | 存储器装置、系统及其操作方法 |
CN109584922A (zh) * | 2017-09-28 | 2019-04-05 | 上海磁宇信息科技有限公司 | 一种用于磁性随机存储器中参照磁性隧道结单元筛选方法 |
CN109584922B (zh) * | 2017-09-28 | 2021-05-11 | 上海磁宇信息科技有限公司 | 一种用于磁性随机存储器中参照磁性隧道结单元筛选方法 |
CN110289033A (zh) * | 2018-03-19 | 2019-09-27 | 东芝存储器株式会社 | 磁存储装置 |
CN109671456A (zh) * | 2018-12-24 | 2019-04-23 | 江苏时代全芯存储科技有限公司 | 记忆体装置 |
CN109671456B (zh) * | 2018-12-24 | 2023-09-22 | 北京时代全芯存储技术股份有限公司 | 记忆体装置 |
CN113646840A (zh) * | 2019-09-12 | 2021-11-12 | 合肥睿科微电子有限公司 | 随机存取存储器单元的电压模式位线预充电 |
CN113646840B (zh) * | 2019-09-12 | 2024-05-03 | 合肥睿科微电子有限公司 | 随机存取存储器单元的电压模式位线预充电 |
CN114981890A (zh) * | 2019-12-18 | 2022-08-30 | 美光科技公司 | 具有自动预充电的存储器存取 |
CN114981890B (zh) * | 2019-12-18 | 2023-08-01 | 美光科技公司 | 具有自动预充电的存储器存取 |
Also Published As
Publication number | Publication date |
---|---|
TW201432678A (zh) | 2014-08-16 |
TWI603325B (zh) | 2017-10-21 |
US9047945B2 (en) | 2015-06-02 |
US20140104926A1 (en) | 2014-04-17 |
WO2014062558A1 (en) | 2014-04-24 |
CN104718576B (zh) | 2017-05-31 |
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Effective date of registration: 20200508 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200508 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Patentee before: Marvell International Ltd. Effective date of registration: 20200508 Address after: Hamilton, Bermuda Patentee after: Marvell International Ltd. Address before: Babado J San Mega Le Patentee before: MARVELL WORLD TRADE Ltd. |
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