CN104620384B - Soi晶圆的制造方法 - Google Patents
Soi晶圆的制造方法 Download PDFInfo
- Publication number
- CN104620384B CN104620384B CN201380047666.6A CN201380047666A CN104620384B CN 104620384 B CN104620384 B CN 104620384B CN 201380047666 A CN201380047666 A CN 201380047666A CN 104620384 B CN104620384 B CN 104620384B
- Authority
- CN
- China
- Prior art keywords
- film
- bonded wafers
- oxide
- ion
- soi wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Element Separation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-255719 | 2012-11-21 | ||
JP2012255719A JP5821828B2 (ja) | 2012-11-21 | 2012-11-21 | Soiウェーハの製造方法 |
PCT/JP2013/006072 WO2014080563A1 (ja) | 2012-11-21 | 2013-10-11 | Soiウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104620384A CN104620384A (zh) | 2015-05-13 |
CN104620384B true CN104620384B (zh) | 2017-06-06 |
Family
ID=50775761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380047666.6A Active CN104620384B (zh) | 2012-11-21 | 2013-10-11 | Soi晶圆的制造方法 |
Country Status (7)
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6353814B2 (ja) * | 2015-06-09 | 2018-07-04 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
JP6556511B2 (ja) * | 2015-06-17 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN110085549B (zh) * | 2018-01-26 | 2021-06-04 | 沈阳硅基科技有限公司 | 一种双面注入得到soi的方法 |
CN110544668B (zh) | 2018-05-28 | 2022-03-25 | 沈阳硅基科技有限公司 | 一种通过贴膜改变soi边缘stir的方法 |
CN109360805A (zh) * | 2018-09-28 | 2019-02-19 | 沈阳硅基科技有限公司 | 一种图形soi硅片的制备方法 |
CN115188703A (zh) * | 2022-05-16 | 2022-10-14 | 绍兴中芯集成电路制造股份有限公司 | 一种soi晶圆及制造方法 |
FR3146019A1 (fr) * | 2023-02-16 | 2024-08-23 | Soitec | Procédé de formation d’une zone de fragisilation dans un substrat semi-conducteur |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0955671B1 (en) * | 1998-04-23 | 2006-12-06 | Shin-Etsu Handotai Company Limited | A method of recycling a delaminated wafer and a silicon wafer used for the recycling |
CN101124657A (zh) * | 2005-02-28 | 2008-02-13 | 信越半导体股份有限公司 | 贴合晶圆的制造方法及贴合晶圆 |
CN102986020A (zh) * | 2010-06-30 | 2013-03-20 | 康宁股份有限公司 | 对绝缘体基材上的硅进行精整的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0355822A (ja) | 1989-07-25 | 1991-03-11 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板の製造方法 |
JPH0680624B2 (ja) * | 1990-02-28 | 1994-10-12 | 信越半導体株式会社 | 接合ウエーハの製造方法 |
JP3422225B2 (ja) * | 1997-07-08 | 2003-06-30 | 三菱住友シリコン株式会社 | 貼り合わせ半導体基板及びその製造方法 |
FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
WO2005027204A1 (ja) * | 2003-09-08 | 2005-03-24 | Sumco Corporation | 貼り合わせウェーハおよびその製造方法 |
JP4398934B2 (ja) | 2005-02-28 | 2010-01-13 | 信越半導体株式会社 | Soiウエーハの製造方法 |
JP5233111B2 (ja) | 2006-11-30 | 2013-07-10 | 株式会社Sumco | 貼り合わせsoiウェーハの製造方法 |
US7902039B2 (en) | 2006-11-30 | 2011-03-08 | Sumco Corporation | Method for manufacturing silicon wafer |
JP2011187502A (ja) * | 2010-03-04 | 2011-09-22 | Seiko Epson Corp | 半導体装置の製造方法 |
-
2012
- 2012-11-21 JP JP2012255719A patent/JP5821828B2/ja active Active
-
2013
- 2013-10-11 US US14/427,151 patent/US9378999B2/en active Active
- 2013-10-11 KR KR1020157005866A patent/KR101910100B1/ko active Active
- 2013-10-11 WO PCT/JP2013/006072 patent/WO2014080563A1/ja active Application Filing
- 2013-10-11 CN CN201380047666.6A patent/CN104620384B/zh active Active
- 2013-10-11 EP EP13856571.8A patent/EP2924736B1/en active Active
- 2013-10-11 SG SG11201501873QA patent/SG11201501873QA/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0955671B1 (en) * | 1998-04-23 | 2006-12-06 | Shin-Etsu Handotai Company Limited | A method of recycling a delaminated wafer and a silicon wafer used for the recycling |
CN101124657A (zh) * | 2005-02-28 | 2008-02-13 | 信越半导体股份有限公司 | 贴合晶圆的制造方法及贴合晶圆 |
CN102986020A (zh) * | 2010-06-30 | 2013-03-20 | 康宁股份有限公司 | 对绝缘体基材上的硅进行精整的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2924736A1 (en) | 2015-09-30 |
EP2924736B1 (en) | 2017-08-30 |
CN104620384A (zh) | 2015-05-13 |
KR101910100B1 (ko) | 2018-10-19 |
JP5821828B2 (ja) | 2015-11-24 |
KR20150087181A (ko) | 2015-07-29 |
WO2014080563A1 (ja) | 2014-05-30 |
US20150243550A1 (en) | 2015-08-27 |
EP2924736A4 (en) | 2016-06-29 |
SG11201501873QA (en) | 2015-05-28 |
JP2014103329A (ja) | 2014-06-05 |
US9378999B2 (en) | 2016-06-28 |
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