CN104620097B - 检验晶片及/或预测形成于晶片上的装置的一或多个特性 - Google Patents

检验晶片及/或预测形成于晶片上的装置的一或多个特性 Download PDF

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Publication number
CN104620097B
CN104620097B CN201380047045.8A CN201380047045A CN104620097B CN 104620097 B CN104620097 B CN 104620097B CN 201380047045 A CN201380047045 A CN 201380047045A CN 104620097 B CN104620097 B CN 104620097B
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dies
printed
defects
error
wafer
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Chinese (zh)
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CN104620097A (zh
Inventor
G·马尔库奇利
A·威德曼
E·张
J·鲁滨逊
A·帕克
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN201380047045.8A 2012-08-01 2013-08-01 检验晶片及/或预测形成于晶片上的装置的一或多个特性 Active CN104620097B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US61/678,576 2012-08-01
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
US13/783,291 2013-03-02
PCT/US2013/053252 WO2014022682A1 (en) 2012-08-01 2013-08-01 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Publications (2)

Publication Number Publication Date
CN104620097A CN104620097A (zh) 2015-05-13
CN104620097B true CN104620097B (zh) 2017-08-29

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CN201380047045.8A Active CN104620097B (zh) 2012-08-01 2013-08-01 检验晶片及/或预测形成于晶片上的装置的一或多个特性

Country Status (8)

Country Link
US (1) US8948495B2 (cg-RX-API-DMAC7.html)
EP (1) EP2880427A1 (cg-RX-API-DMAC7.html)
JP (4) JP6282650B2 (cg-RX-API-DMAC7.html)
KR (2) KR102169564B1 (cg-RX-API-DMAC7.html)
CN (1) CN104620097B (cg-RX-API-DMAC7.html)
IL (2) IL236957B (cg-RX-API-DMAC7.html)
TW (1) TWI591326B (cg-RX-API-DMAC7.html)
WO (1) WO2014022682A1 (cg-RX-API-DMAC7.html)

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US10761128B2 (en) * 2017-03-23 2020-09-01 Kla-Tencor Corporation Methods and systems for inline parts average testing and latent reliability defect detection
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EP3451061A1 (en) * 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
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CN111426701B (zh) * 2019-06-25 2024-01-30 合肥晶合集成电路股份有限公司 一种晶圆缺陷检测方法及其装置
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Also Published As

Publication number Publication date
IL255772A (en) 2018-01-31
KR102169564B1 (ko) 2020-10-26
CN104620097A (zh) 2015-05-13
KR102129826B1 (ko) 2020-07-06
US8948495B2 (en) 2015-02-03
JP2021182162A (ja) 2021-11-25
TW201415008A (zh) 2014-04-16
EP2880427A1 (en) 2015-06-10
IL236957B (en) 2018-07-31
JP6282650B2 (ja) 2018-02-21
KR20150036789A (ko) 2015-04-07
US20140037187A1 (en) 2014-02-06
JP2020057008A (ja) 2020-04-09
TWI591326B (zh) 2017-07-11
JP2015527740A (ja) 2015-09-17
WO2014022682A1 (en) 2014-02-06
KR20200045577A (ko) 2020-05-04
IL255772B (en) 2020-09-30
JP2018097376A (ja) 2018-06-21

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