CN104604135B - 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合 - Google Patents

与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合 Download PDF

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Publication number
CN104604135B
CN104604135B CN201380046576.5A CN201380046576A CN104604135B CN 104604135 B CN104604135 B CN 104604135B CN 201380046576 A CN201380046576 A CN 201380046576A CN 104604135 B CN104604135 B CN 104604135B
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China
Prior art keywords
field effect
fet
gate
circuit
switch
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Chinese (zh)
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CN104604135A (zh
Inventor
F.阿尔滕吉利克
G.布林
H.塞比
H.富
M.苏
J-H.李
A.马丹
N.斯里拉塔纳
C.希
S.斯普林克利
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Priority to CN201710243371.6A priority Critical patent/CN107276577B/zh
Priority to CN201711420589.0A priority patent/CN108155900B/zh
Priority to CN201711419244.3A priority patent/CN108134596B/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201380046576.5A 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合 Active CN104604135B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201710243371.6A CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备
CN201711420589.0A CN108155900B (zh) 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法
CN201711419244.3A CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US201261669049P 2012-07-07 2012-07-07
US201261669044P 2012-07-07 2012-07-07
US201261669037P 2012-07-07 2012-07-07
US201261669039P 2012-07-07 2012-07-07
US201261669050P 2012-07-07 2012-07-07
US201261669055P 2012-07-07 2012-07-07
US201261669045P 2012-07-07 2012-07-07
US201261669035P 2012-07-07 2012-07-07
US201261669034P 2012-07-07 2012-07-07
US201261669042P 2012-07-07 2012-07-07
US201261669047P 2012-07-07 2012-07-07
US201261669054P 2012-07-07 2012-07-07
US61/669,034 2012-07-07
US61/669,055 2012-07-07
US61/669,047 2012-07-07
US61/669,035 2012-07-07
US61/669,045 2012-07-07
US61/669,054 2012-07-07
US61/669,044 2012-07-07
US61/669,049 2012-07-07
US61/669,039 2012-07-07
US61/669,042 2012-07-07
US61/669,050 2012-07-07
US61/669,037 2012-07-07
US201361760561P 2013-02-04 2013-02-04
US61/760,561 2013-02-04
PCT/US2013/049500 WO2014011510A2 (en) 2012-07-07 2013-07-06 Circuits, devices, methods and combinations related to silicon-on-insulator based radio-frequency switches

Related Child Applications (3)

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CN201711420589.0A Division CN108155900B (zh) 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法
CN201711419244.3A Division CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块
CN201710243371.6A Division CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备

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CN104604135A CN104604135A (zh) 2015-05-06
CN104604135B true CN104604135B (zh) 2018-01-26

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CN201380046576.5A Active CN104604135B (zh) 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合
CN201711419244.3A Active CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块
CN201710243371.6A Active CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备
CN201711420589.0A Active CN108155900B (zh) 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法

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CN201711419244.3A Active CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块
CN201710243371.6A Active CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备
CN201711420589.0A Active CN108155900B (zh) 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法

Country Status (6)

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EP (2) EP2870694B1 (https=)
JP (1) JP6026654B2 (https=)
KR (1) KR102063163B1 (https=)
CN (4) CN104604135B (https=)
TW (5) TWI624110B (https=)
WO (1) WO2014011510A2 (https=)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140361847A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Low loss multiple output switch with integrated distributed attenuation
JP6295802B2 (ja) 2014-04-18 2018-03-20 ソニー株式会社 高周波デバイス用電界効果トランジスタおよびその製造方法、ならびに高周波デバイス
US20160134281A1 (en) * 2014-05-19 2016-05-12 Skyworks Solutions, Inc. Switch isolation network
US9438223B2 (en) 2014-05-20 2016-09-06 Qualcomm Incorporated Transistor based switch stack having filters for preserving AC equipotential nodes
TWI580185B (zh) * 2015-03-05 2017-04-21 瑞昱半導體股份有限公司 類比開關電路
JP2016174240A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体スイッチ
WO2016161029A1 (en) * 2015-03-31 2016-10-06 Skyworks Solutions, Inc. Substrate bias for field-effect transistor devices
CN106612113B (zh) * 2015-10-21 2020-08-21 上海新微技术研发中心有限公司 一种提高打开的支路间隔离度的射频开关电路
CN106911326A (zh) * 2015-12-18 2017-06-30 上海新微技术研发中心有限公司 一种可减少偏压控制信号的射频开关
US10044341B2 (en) 2016-07-07 2018-08-07 Samsung Electro-Mechanics Co., Ltd. Radio frequency switch circuit and apparatus having built-in coupler
KR101823270B1 (ko) * 2016-07-07 2018-01-29 삼성전기주식회사 커플러 내장형 고주파 스위치 회로 및 장치
CN106209048A (zh) * 2016-08-22 2016-12-07 江苏卓胜微电子有限公司 一种组合拆分射频开关
US10200029B2 (en) 2016-09-01 2019-02-05 Analog Devices, Inc. Low capacitance analog switch or transmission gate
US10560061B2 (en) 2016-09-01 2020-02-11 Analog Devices, Inc. Low capacitance switch for programmable gain amplifier or programable gain instrumentation amplifier
WO2018045298A1 (en) * 2016-09-01 2018-03-08 Analog Devices, Inc. Low capacitance switch for pga or pgia
JP6623133B2 (ja) 2016-09-05 2019-12-18 株式会社東芝 高周波半導体増幅回路
CN109804465B (zh) * 2016-09-23 2022-11-29 三菱电机株式会社 电力用半导体模块以及电力用半导体装置
TWI814672B (zh) * 2016-09-26 2023-09-01 美商天工方案公司 用於射頻應用之主輔場效電晶體組態
KR101823269B1 (ko) * 2016-11-18 2018-01-29 삼성전기주식회사 다이나믹 바이어스를 갖는 고주파 스위치 장치
US10411658B2 (en) 2016-12-14 2019-09-10 Kabushiki Kaisha Toshiba Semiconductor device
KR102624466B1 (ko) 2017-01-12 2024-01-15 삼성전자주식회사 다중 대역 안테나를 구비한 전자 장치 및 다중 대역 안테나를 구비한 전자 장치에서 스위칭 방법
WO2018139495A1 (ja) * 2017-01-30 2018-08-02 株式会社村田製作所 スイッチ回路
CN106972845A (zh) * 2017-04-07 2017-07-21 广东工业大学 一种射频开关电路
TWI697097B (zh) * 2017-04-18 2020-06-21 力智電子股份有限公司 電力開關及其半導體裝置
KR101912289B1 (ko) * 2017-06-28 2018-10-29 삼성전기 주식회사 고조파 감쇠특성을 개선한 고주파 스위치 장치
KR102348686B1 (ko) * 2017-08-04 2022-01-06 삼성전기주식회사 션트 및 바이어스 복합형의 고주파 스위치 장치
CN107819900B (zh) * 2017-10-13 2020-06-05 捷开通讯(深圳)有限公司 一种移动通讯终端及其主板
WO2019098145A1 (ja) * 2017-11-14 2019-05-23 株式会社村田製作所 増幅回路、フロントエンド回路および受信回路
US10574212B2 (en) * 2017-11-21 2020-02-25 Mediatek Inc. Method and circuit for low-noise reference signal generation
CN107947775A (zh) * 2017-12-13 2018-04-20 上海华虹宏力半导体制造有限公司 一种改善关断电容的射频开关电路
JP6516029B2 (ja) * 2018-02-19 2019-05-22 ソニー株式会社 電界効果トランジスタおよび無線通信装置
US10680605B2 (en) * 2018-02-28 2020-06-09 Infineon Technologies Ag Bias circuit and method for a high-voltage RF switch
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
CN108649953A (zh) * 2018-05-04 2018-10-12 中国电子科技集团公司第二十四研究所 一种基于p阱浮空技术的采样开关及控制方法
CN109194320A (zh) * 2018-09-11 2019-01-11 成都聚利中宇科技有限公司 一种tr开关
CN109450419A (zh) * 2018-11-30 2019-03-08 惠州华芯半导体有限公司 射频开关芯片
KR102670924B1 (ko) 2019-01-24 2024-05-31 삼성전자 주식회사 스위치 및 상기 스위치를 제어하기 위한 스위치 제어 프로세서를 포함하는 증폭기
TWI679829B (zh) * 2019-01-25 2019-12-11 天揚精密科技股份有限公司 多節電池組之穩定供電裝置
EP3719997A1 (de) * 2019-04-01 2020-10-07 Siemens Aktiengesellschaft Beschaltung eines halbleiterschalters
JP6717404B2 (ja) * 2019-04-16 2020-07-01 ソニー株式会社 電界効果トランジスタおよび無線通信装置
KR102636848B1 (ko) * 2019-06-18 2024-02-14 삼성전기주식회사 균등 전압 분배 기능을 갖는 고주파 스위치
US10784862B1 (en) * 2019-09-10 2020-09-22 Nxp Usa, Inc. High speed switching radio frequency switches
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
KR102234905B1 (ko) * 2020-02-04 2021-03-31 목포대학교산학협력단 무선용 고속 온타임 특성을 갖는 ｒｆ 스위치
US11368180B2 (en) * 2020-07-31 2022-06-21 Nxp Usa, Inc. Switch circuits with parallel transistor stacks and methods of their operation
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
US11677392B2 (en) 2021-04-16 2023-06-13 Analog Devices International Unlimited Company Bias networks for DC or extended low frequency capable fast stacked switches
CN115378410B (zh) * 2021-05-20 2025-06-03 开元通信技术（厦门）有限公司 一种射频开关电路及射频模块
CN113595579B (zh) * 2021-06-30 2023-03-24 锐石创芯(深圳)科技股份有限公司 射频开关模组和射频开关电路
CN113868937B (zh) * 2021-08-20 2022-08-23 浙江大学 基于动态空间映射的硅场效应管射频开关谐波预测方法
CN113794488B (zh) * 2021-11-15 2022-02-08 成都爱旗科技有限公司 一种射频电路板及射频电路板的制作方法
GB2612851B (en) * 2021-11-16 2024-08-21 Iceye Oy Radio frequency switch driver
CN116192112A (zh) 2021-11-29 2023-05-30 株式会社东芝 半导体装置
CN114884530B (zh) * 2022-04-20 2024-04-19 星宸科技股份有限公司 一种有线收发器
US20230353140A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Biasing body node of a transistor
US12206400B2 (en) 2022-08-22 2025-01-21 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
US12155381B2 (en) 2022-08-22 2024-11-26 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
JP2026503103A (ja) * 2023-02-01 2026-01-27 クゥアルコム・インコーポレイテッド 無線周波数（ｒｆ）スイッチに関する動的ボディバイアス印加
JP2024135239A (ja) 2023-03-22 2024-10-04 株式会社東芝 高周波半導体集積回路
CN118590046B (zh) * 2024-06-27 2026-04-21 上海华虹宏力半导体制造有限公司 射频开关及射频终端
CN119730258B (zh) * 2024-12-09 2026-03-27 武汉新芯集成电路股份有限公司 电容结构及其控制方法、半导体器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255756A (en) * 1979-01-05 1981-03-10 Mitsubishi Denki Kabushiki Kaisha Substrate bias generator
CN101958703A (zh) * 2010-07-28 2011-01-26 锐迪科创微电子（北京）有限公司 Soi cmos射频开关及包含该射频开关的射频发射前端模块
WO2011045442A2 (en) * 2009-10-16 2011-04-21 Ferfics Limited Switching system and method
CN102107848A (zh) * 2009-12-25 2011-06-29 华东光电集成器件研究所 一种悬浮射频开关的制造方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2964975B2 (ja) * 1997-02-26 1999-10-18 日本電気株式会社 高周波スイッチ回路
US6281737B1 (en) * 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6933572B2 (en) * 2001-10-31 2005-08-23 Micron Technology, Inc. Field-shielded SOI-MOS structure free from floating body effect, and method of fabrication therefor
CN1141787C (zh) * 2002-07-05 2004-03-10 清华大学 变增益的单端到差分的射频低噪声放大器
US6903987B2 (en) * 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
ATE456194T1 (de) * 2003-07-22 2010-02-15 Nxp Bv Antennenschalter mit adaptivem filter
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
KR100706737B1 (ko) * 2003-08-28 2007-04-12 가부시끼가이샤 르네사스 테크놀로지 반도체 기억 장치 및 그 제조 방법
CN100525074C (zh) * 2004-02-17 2009-08-05 艾利森电话股份有限公司 动态偏置放大器
JP2005318093A (ja) * 2004-04-27 2005-11-10 Toshiba Corp 高周波スイッチ回路
US7683433B2 (en) * 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7049863B2 (en) * 2004-07-13 2006-05-23 Skyworks Solutions, Inc. Output driver circuit with reduced RF noise, reduced power consumption, and reduced load capacitance susceptibility
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7619462B2 (en) * 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
US7253675B2 (en) * 2005-03-08 2007-08-07 Texas Instruments Incorporated Bootstrapping circuit capable of sampling inputs beyond supply voltage
JP2006310512A (ja) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP2006332778A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 高周波スイッチ回路およびこれを用いた半導体装置
JP2006332416A (ja) * 2005-05-27 2006-12-07 Nec Electronics Corp 半導体装置
US7910993B2 (en) * 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
CN101102103A (zh) * 2006-05-31 2008-01-09 松下电器产业株式会社 射频开关电路、射频开关装置和发射机模块装置
JP2008011120A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 半導体スイッチ回路
JP2008017416A (ja) * 2006-07-10 2008-01-24 Matsushita Electric Ind Co Ltd 高周波スイッチ装置
JP4342569B2 (ja) * 2007-04-17 2009-10-14 株式会社東芝 高周波スイッチ回路
US7848712B2 (en) * 2007-05-03 2010-12-07 Intel Corporation CMOS RF switch for high-performance radio systems
CN101558563B (zh) * 2007-08-16 2013-03-06 日本电气株式会社 开关电路和半导体装置
US20090181630A1 (en) * 2008-01-15 2009-07-16 Kabushiki Kaisha Toshiba Radio frequency switch circuit
JP2009201096A (ja) * 2008-01-22 2009-09-03 Nec Electronics Corp スイッチ回路
US8358155B2 (en) * 2008-01-29 2013-01-22 Oracle America, Inc. Circuit that facilitates proximity communication
US7928794B2 (en) * 2008-07-21 2011-04-19 Analog Devices, Inc. Method and apparatus for a dynamically self-bootstrapped switch
JP5189958B2 (ja) * 2008-11-10 2013-04-24 ルネサスエレクトロニクス株式会社 半導体集積回路およびそれを内蔵した高周波モジュール
US8232597B2 (en) * 2009-07-15 2012-07-31 Io Semiconductor, Inc. Semiconductor-on-insulator with back side connection
US8058922B2 (en) * 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
US7952419B1 (en) * 2009-11-16 2011-05-31 Analog Devices, Inc. Bootstrapped switch circuit
US8288895B2 (en) * 2009-11-27 2012-10-16 Samsung Electro-Mechanics High-power tunable capacitor
US8334718B2 (en) * 2009-12-23 2012-12-18 Rf Micro Devices, Inc. Variable attenuator having stacked transistors
US8970278B2 (en) * 2010-04-27 2015-03-03 Rf Micro Devices, Inc. High power FET switch
US8330519B2 (en) * 2010-07-09 2012-12-11 Sige Semiconductor Inc. System and method of transistor switch biasing in a high power semiconductor switch
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
US8629725B2 (en) * 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
JP5814547B2 (ja) * 2010-12-20 2015-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255756A (en) * 1979-01-05 1981-03-10 Mitsubishi Denki Kabushiki Kaisha Substrate bias generator
WO2011045442A2 (en) * 2009-10-16 2011-04-21 Ferfics Limited Switching system and method
CN102107848A (zh) * 2009-12-25 2011-06-29 华东光电集成器件研究所 一种悬浮射频开关的制造方法
CN101958703A (zh) * 2010-07-28 2011-01-26 锐迪科创微电子（北京）有限公司 Soi cmos射频开关及包含该射频开关的射频发射前端模块

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